Разработка физико-топологической модели реакции мощного вертикального ДМОП транзистора на воздействие импульсного гамма-излучения

Abstract

AbstractA method for developing models of semiconductor devices with two-dimensional nonuniform concentration profiles of donors and acceptors in working regions of a semiconductor device structure is for the first time proposed based on a complex of physical-topological modeling of charge carrier transport and process simulation of the forming processes of the device structure. The application of process simulation is due to the need to correctly define the parameters of the semiconductor device structure, which are used as initial data to calculate the electron transport according to the physical-topological model. The parameters of production processes of ion implantation, diffusion, and lithography, which were refined during process simulation, are determined for a high-power metal—oxide—semiconductor (MOS) transistor forming by the double diffusion method in accordance with known electrical characteristics and measured geometrical sizes of the structure. This results in two-dimensional distribution profiles of donors and acceptors in p – n junctions necessary to calculate the transistor breakdown under the effect of pulsed γ radiation. Breakdown processes are modeled with the help of the physical-topological model based on the Poisson and continuity equations as well as expressions for the diffusion and drift current densities in the transistor. Accounting for carriers formed at the instant of γ irradiation is implemented by the introduction of the dependence of the generation coefficient of electron–hole pairs on the radiation-dose power. The results of calculations correlate well with the experimental data, which makes it possible to give a conclusion regarding the adequacy of the proposed complex model.