Abstract
In this paper a complete mathematical model for exposure and development process simulations in ion lithography is described. The corresponding software package is developed. The main steps of the model are (1) exposure process modelling, involving ion scattering simulation and dissipated energy calculation, and (2) development process modelling, involving solubility rate calculation and the simulation of developed profile evolution. The presented models are realized by means of a software package. Thus, it is possible to predict the final result in the case of ion lithography under given initial conditions. The simulation result is very useful when optimizing particular technological processes in microcircuit lithography. It can be used for the development of an algorithm to correct the proximity effect of real microelectronic structures.
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