Abstract
The paper presents the results of AFM measurements of piezomodulus d33 in aluminum nitride films obtained by vacuum magnetron sputtering in a reactive gas atmosphere of argon and nitrogen. Dependences of piezomodule d33 on technological parameters are presented of sputtering AlN films, such as substrate temperature, magnetron discharge power, and the Ar/N2 ratio. Based on the analysis of the obtained data, the optimal technological modes of formation of aluminum nitride films have been determined aluminum nitride films for the formation of the piezoelectric layer of the FBAR.
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