Abstract
In the paper, thin carbon films deposited by pulse-plasma ion-assisted sputtering of graphite in argon-nitrogen gas mixture are discussed. The EELS and electron diffraction showed the graphite phase enlargement with the ion assistance energy increase. Application of ion assistance during the deposition process made it possible to control the films specific resistivity, altering it from 10^5 to 10^2 Ohm⋅cm.
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