Abstract
We investigated the high resistivity properties of tungsten and tungsten nitride thin films deposited by RF and DC sputtering system. It deposited at various conditions that determine the resistivity and sheet resistivity. The properties of the resistivity and sheet resistivity of these films measured under various conditions. Resistivity and sheet resistance analyzed the flow rate of the argon gas and contents of nitrogen from nitrogen-argon gas mixtures. We found that these resistivities were depend on the temperature of substrate, gas flow rate and RF power. Very high and low resistivity of tungsten films obtained by DC sputtering. As the increase of contents of nitrogen gas obtained from nitrogen-argon gas mixture, tungsten nitride thin films deposited by the reactive DC sputtering and the resistivities of these films increased.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.