Оценка и анализ радиационной стойкости радиоэлектронных элементов на кремниевой основе бортовой аппаратуры наноспутника при воздействии ионизирующего излучения солнечно-синхронной орбиты.

Abstract

The paper presents the results of a calculation to study the influence of ionizing, bremsstrahlung radiation on the functioning of a nanosatellite. A comparative analysis of the results of calculating the specific ionization and radiation energy losses of protons (from 0.1 to 400 MeV) and electrons (from 0.04 to 7 MeV), as well as their path lengths in aluminum according to the formulas of various authors and the database of materials of the National Institute of Standards and Technologies is presented. Based on the analysis results, the annual dose in the aluminum structure of the SamSat-ION nanosatellite in a circular sun-synchronous orbit (SSO) is calculated. All calculations are based on the data of the energy spectra of protons and electrons of the SSO given in the "Information system Spenvis of the European Space Agency". The results of calculating the integral fluxes in aluminum under the action of protons and electrons of a circular SSO for different thicknesses are obtained, and the fraction of passed particles is shown in the approximation of a single-layer stack. Estimation of the radiation resistance of the electronic elements ISL70321SEH, ISL73321SEH and Virtex - 4QV, Virtex -5QV included in the SamSat - ION in the approximation of a double-layer stack was made for various thickness of Si and its ability to operate during the year.