Effect of the ionization energy loss density of high-energy bismuth, krypton, and xenon ions on the development of hydrogen blisters in silicon

Abstract

Radiation-induced athermal hydrogen removal from single-crystal silicon subjected to irradiation by high-energy heavy Bi+ (E = 710 MeV), Kr+ (E = 85 and 250 MeV), and Xe+ (130 MeV) ions is detected experimentally. The decrease in the hydrogen concentration depends on the specific ionization energy losses of high-energy heavy ions. At high specific ionization losses of Bi+ ions with E = 710 MeV (22.5 keV/nm), the hydrogen concentration decreases to a level at which blisters cannot be observed in an optical or electron microscope (which is likely to be 1 at % hydrogen at the peak of the calculated hydrogen concentration profile). At medium specific ionization losses of Xe+ ions with E = 130 MeV (12.5 keV/nm) and Kr+ ions with E = 250 and 85 MeV (9.5 and 8.5 keV/nm, respectively), the hydrogen concentration decreases to a level that does not affect blister formation but determines the blister failure (flaking) conditions.