Abstract
The results of numerical simulation of the current dependence of the injection efficiency in the active area of the laser based on separate confinement heterostructures are presented. The feature of the transfer of charge carriers through isotype N-n heterotransitions on the interface boundary of waveguide and active areas is shown. Using the classic dependencies of the Drude-Lorentz theory, the cross-section of electrons and holes for the GaAs waveguide was evaluated. The resulting values of σe= 1.05∙10-18 cm2 and σp= 1.55∙10-19 cm2 and current dependencies of the injection efficiency allowed to determine the root-cause reason for the pulse power saturation of semiconductor lasers. It has been established that saturation of power-current characteristics is dominated by holes escape from the active region to the waveguide and internal optical losses are lower confinement factors.
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