Abstract
Internal optical loss in high-power semiconductor lasers based on quantum-well separate-confinement heterostructures was studied. Calculations show that the major portion of the internal optical loss occurs in the active region and emitters. Making the laser waveguide thicker and the cavity longer reduces the internal optical loss. Two possible approaches to the design of laser heterostructures are considered, and optimal solutions are suggested. The difference in the internal optical loss between lasers on InP and those on GaAs substrates is attributed to the larger cross section of photon absorption by holes in InP. Good agreement between the calculated and experimental values of the internal optical loss in lasers on InP and GaAs substrates is obtained.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
