In this study, homojunction bilayer In2O3thin film transistors (TFTs) were prepared by RF-magnetron sputtering at room temperature. Herein, an active channel of bilayer In2O3TFTs are consist of the front channel with lower (poor) oxygen content and the back channel with higher (rich) oxygen content. Therefore, optimizedbilayer In2O3TFT was fabricatedandaμFE of 32.5 cm2/Vs and a small SS of 280 mV/decade, a small VTH of 0.3 Vwere achieved. In addition, small VTH shifts of 0.7 (−1.0) and 0.4 (−1.2) V under gate bias and light illumination stress tests were obtained. Through XPS band structure analysis indicated that the formation of band bending between the channel layers leads to electron injection from the back channel into the front channel, resulting in accumulation of forming carriers near the interface of the bilayer, resulting in increase the μFE of In2O3TFTs. Furthermore, XPS and LFN measurement demonstrate that control the oxygen content can reduced the oxygen-related defects and bulk/interface trap density while controlling the Ne and carrier transport in the bilayer In2O3 film,which enhance the stability of In2O3TFTs. Overall, the high-performance bilayer In2O3TFTshave opena new method to obtaine the flexible electronic devices.