Perovskite heterojunctions combine the advantages of two different components but suffer difficulties in the tightness of interconnection and limitation of material selection. Here we report an electric field-driven ion deposition (EFID) strategy that controllably deposits perovskite ions on heterogeneous single crystals to form a gradient heterojunction with tight integration. The interconnection force of the gradient heterojunction by the EFID method is much better than that of the solution-grown heterojunction, which is easily decomposed. An EFID-enabled heterojunction was constructed by depositing the 3D MAPbI3 perovskite on the 2D (FPEA)2PbI4 perovskite, exhibiting an excellent X-ray sensitivity of 2.12 × 104 μC Gy-1 cm-2 under an electric field of 500 V mm-1 and a low limit of detection (LoD) less than 12.01 nGy s-1, substantially better than that of the pristine 2D or 3D counterparts. This work expands the methodology for constructing perovskite heterojunctions, offering new perspectives for future perovskite heterojunction engineering.
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