The stress relaxation resistance of copper-based materials determines the reliability of contact and stable transmission of connector plugs. This study investigates the effect of trace bismuth (110 wt ppm) on the stress relaxation resistance of pure copper at temperatures of 25 °C, 100 °C, and 200 °C. The relationship between microstructure and stress relaxation resistance was analyzed using SEM, EBSD, and HAADF-STEM. The results demonstrate that trace bismuth significantly enhances the stress relaxation resistance of pure copper, especially at higher temperatures of 100 °C and 200 °C, where the stress relaxation rates of Cu-0.011Bi samples after 48 h decreased by 21.36 % and 18.06 %, respectively, compared to Cu samples. Trace bismuth elements exist in copper mainly in the form of double atomic layers segregated at grain boundaries, which pin the grain boundaries, inhibit grain growth, and hinder dislocation slip. At room temperature (25 °C), bismuth mainly improves stress relaxation resistance by refining grains. At higher temperatures of 100 °C and 200 °C, the significant enhancement in stress relaxation resistance is primarily related to bismuth's inhibition of the reduction in dislocation density and recrystallization during the stress relaxation process.
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