Work Function Of Material Research Articles

Electrode materials optimize operating voltage and switching speed in micro/nano plasma ultrafast devices

Abstract The trade-off between ultrahigh speed and low operating voltage is a major challenge in the continuous improvement of modern electronics. Although micro/nano plasma devices have demonstrated the potential of picosecond switching speed and high output power, surpassing traditional electronic devices, versatile methods for optimizing the operating voltage and switching speed are highly desired. Here, an optimization scheme based on the work function of the electrode materials is reported, which reduces the operating voltage and improves the switching speed. Compared with traditional methods, such as narrowing gaps or distorting electric fields, this approach offers advantages such as reducing production costs, enhancing consistency, and improving tunability. The experimental results show that using silver as a low-work-function electrode material can reduce the operating voltage by 55% to 180 V and increase the switching speed by 58% to 7.1 V/ps compared to platinum, which is equivalent to a 71% reduction in gap size. In addition, the underlying working mechanisms and inherent advantages of the approach are demonstrated, providing new insights for the ultrahigh switching speed and low-power application of micro/nano plasma devices, such as high-speed communication and ultrafast electronics.

Impacting factors and operation thresholds of electron transpiration cooling-based thermal protection system

Electron transpiration cooling (ETC) is a spontaneous endothermic process that occurs during thermionic emission, which shows great potential in ultra-high-temperature thermal protection systems (TPS). Herein, we systematically analyze the main influencing factors on the cooling effect of ETC, such as incoming flow velocity, geometry, and material work function. A two-dimensional finite element model, based on Navier-Stokes equations coupled with the 11-species air reaction model and two-temperature model, is developed to solve the thermal interaction between ETC and the non-equilibrium flow field. Three operational thresholds for ETC are identified. Lower work functions enhance electron emission, thereby reducing wall temperature. With a 2.0 eV work function, ETC significantly outperforms blackbody radiation at 1360 K, and its cooling efficiency increases with temperature. For flow velocities above Mach 9.0, ETC is effective at the leading edge with a 2.4 eV work function and a 5 mm radius. However, it loses effectiveness with a 300 mm leading edge radius, even at Mach 16.0. Notably, at Mach 19.6, with a 2.0 eV work function and a 5 mm radius, ETC reduces surface temperature by up to 48.1 %. These findings highlight the considerable potential of ETC for applications in ultra-high-temperature TPS. These findings highlight the considerable potential of ETC for applications in ultra-high-temperature TPS.

Design and Optimization of Iron-Based Superionic-Like Conductor Anode for High-Performance Lithium/Sodium-Ion Batteries.

Metal selenides have received extensive research attention as anode materials for batteries due to their high theoretical capacity. However, their significant volume expansion and slow ion migration rate result in poor cycling stability and suboptimal rate performance. To address these issues, the present work utilized multivalent iron ions to construct fast pathways similar to superionic conductors (Fe-SSC) and introduced corresponding selenium vacancies to enhance its performance. Based on first-principles calculations and molecular dynamics simulations, it is demonstrated that the addition of iron ions and the presence of selenium vacancies reduced the material's work function and adsorption energy, lowered migration barriers, and enhances the migration rate of Li+ and Na+. In Li-ion half batteries, this composite material exhibites reversible capacity of 1048.3 mAh g-1 at 0.1 A g-1 after 100 cycles and 483.6 mAh g-1 at 5.0 A g-1 after 1000 cycles. In Na-ion half batteries, it is 687.7 mAh g-1 at 0.1 A g-1 after 200 cycles and 325.9 mAh g-1 at 5.0 A g-1 after 1000 cycles. It is proven that materials based on Fe-SSC and selenium vacancies have great applications in both Li-ion batteries and Na-ion batteries.

On the Possibility of Measuring the Electronic Work Function of Nonvolatile Materials by High-Temperature Mass Spectrometry

On the Possibility of Measuring the Electronic Work Function of Nonvolatile Materials by High-Temperature Mass Spectrometry

Effects of Gd2O3 additives on microscopical morphology of ZrB2-SiC sintering ceramic system: Insights for electron transpiration cooling

By manipulating the work function, the dissipation of thermal energy on the material surface can be regulated through Electron Transpiration Cooling (ETC) mechanism. The doping of rare-earth oxide serves as an effective approach for reducing the work function, whereas there is still a lack of comprehensive research into the microstructural morphology of the rare-earth oxides and their correlations with the modifications of the work functions. This study investigates the detailed microscopical structure of Gd2O3 in the ultrahigh-temperature ceramic system (ZrB2-20 vol%SiC). Semi-quantitative composition analyses based on X-ray photoelectron spectra indicate that an increased doping concentration of Gd2O3 is beneficial for the formation of a single solid-state Gd0.18Zr0.82O1.91 phase of ZrB2-SiC system. Atomic-scale scanning transmission electron microscopy (STEM) analyses suggest that Gd2O3 is enriched at the interfaces between SiC and ZrB2 matrix with a nanoscale fibrous morphology composed of alternated Gd2O3 crystals and pores, rendering a continuous microstructure throughout the entire system. This peculiar microstructural morphology is anticipated to facilitate its diffusion along the grain boundary and the formation of Gd2O3 nanolayers at the surface region below the melting points of the ceramic matrix, which can efficiently lower the material work function and reduce the emission energy of the surface electrons during thermal emission through ETC mechanism. The composite with 10 vol% Gd2O3 induces a reduction of the averaged work function of ∼0.49 eV before preforming the thermionic emission experiments. Our results provide valuable insights into the impacts of rare-earth oxide on the ZrB2-SiC matrix, as well as shed light on the feasibility of the ETC mechanism through the efficient design of thermal protection materials.

Design and optimization of (FA)2BiCuI6-based double perovskite solar cells using kesterite CBTS as hole transport layer for high power conversion and quantum efficiency

This work introduces the design of a novel architecture for double perovskite solar cells (DPSCs) utilizing (FA)2BiCuI6, known for its enhanced stability relative to single perovskite materials for production of efficient, ultra-thin solar cells. The proposed architecture features a unique device configuration of ITO/WO3/(FA)2BiCuI6/Cu2BaSnS4/W, incorporating a Kesterite type Cu-based quaternary chalcogenide material, Cu2BaSnS4 known as CBTS, is used as hole transport layer (HTL) with a bandgap of 1.9 eV, WO3 as the electron transport layer (ETL) with a 2.6 eV bandgap, and (FA)2BiCuI6 as the absorber layer with a 1.55 eV bandgap. The study provides an in-depth theoretical analysis of the energy band structure, defects, and quantum efficiency of the DPSC, highlighting the device’s post-optimization photovoltaic parameters. Remarkably, the optimized DPSC demonstrated superior performance with a PCE of 24.63%, Voc of 1.16 V, Jsc of 25.67 mA cm−2, and FF of 82.87%. The research also explores the effects of various factors on photovoltaic performance, including temperature, interface defect, and generation and recombination rates, as well as work function of back contact materials. The results underscore the exceptional potential of (FA)2BiCuI6, especially when combined with the HTL CBTS, in significantly reducing sheet resistance and enhancing the overall performance of solar cells. The design is validated using the SCAPS-1D simulation software tool.

Steep subthreshold swing Double - Gate tunnel FET using source pocket engineering: Design guidelines

In this work, we propose a promising source engineered Double - Gate (DG) Tunnel Field Effect Transistor (TFET) device capable of providing remarkably low value of Subthreshold Swing (SS) with sufficiently high drive current. Using Sentaurus TCAD simulations, we demonstrate that counter-doped horizontal pockets (doping of pocket is kept opposite to that of source) when placed in the source region introduces a built-in band bending at the source-pocket junction. This lowers the minima of Conduction Band (CB) in pocket region thereby reducing the barrier width as the pocket CB moves closer to source Valence Band (VB). As a result, stronger electric field is observed thereby reducing the threshold voltage (onset of band-to-band tunneling (BTBT)) and subsequent reduction in subthreshold swing. To boost the ON-current and suppress ambipolarity, high-k dielectric material along with low work-function gate material is introduced at source side and low-k gate dielectric along with high work-function gate material is introduced at drain side. Compared to point tunneling in conventional TFETs, the gate overlapped pockets in the proposed structure result in an increase in cross-section area available for BTBT thereby leading to line tunneling of carriers from the source to the pocket, resulting in higher ON-current. In this work, we discuss the role of source engineering in boosting the performance of Hetero-Dielectric (HD) Dual-Metal-Double-Gate (DMDG) TFET. We provide design guidelines to achieve steeper subthreshold swing while considering pocket doping and pocket thickness as the key parameters. A comparative study of conventional DG-TFET and HD-DG-TFET with the proposed Gate-over-Pockets (GoP) HD-DMDG-TFET structure is done. When compared to the conventional DG-TFET with same geometrical parameters, the proposed structure provides ∼33× steeper SS, more than two order improved ON-current, two order lower ambipolar current and 133 folds better Ion/Ioff thus becomes the perfect choice for low power applications.

Effect of Metal Work Function on Electron Transfer Kinetics in Electrochemical Reactions

The longstanding problem of explaining the observed dependence of the kinetic rates of electrochemical reactions on the work function of the electrode material (metal) is revisited, based on a recent paper.1 It was proposed that this dependence could be explained in terms of the effect of the work function of the metal on the free energies of activation of the forward and backward electron transfer reactions. In this presentation, we will explore details of the proposed mechanism.In essence, the mechanism is based on the effect of work function on the Galvani potential of the metal at any given applied potential. Even though the total electron energy (Fermi level) of an electron in the electrode must be the same, regardless of the metal, when it is at equilibrium with a given electrolyte, the manner in which that energy is partitioned between the effect of work function and the effect of potential is significantly different for different electrode materials. A higher work function leads to more stabilization of an electron in the metal (lower free energy) and, since the total free energy must remain the same, this lower free energy due to work function must be compensated by a more negative Galvani potential.The classical analysis of the effect of a more negative potential is based on the theory that a change in potential has a greater effect on the initial (reactant) free energy than it does on the free energy of the transition state. Consequently, the activation energy of the forward (cathodic) reaction is decreased by some fraction α of the corresponding increase in electron energy in the metal. This type of analysis is generally used to quantify the effect of changes in applied voltage and derive current-voltage relationships. In this paper we extend the analysis to take account of changes in the (Galvani) potential ϕm of the metal due to changes in work function Φm.It is reasonable to assume that a change in ϕm will have a similar effect whether it occurs due to a change in applied voltage or due to a change in the work function of the metal. This implies that an increase in work function with a corresponding negative shift in Galvani potential can lead to a lowering of activation energy and so to faster kinetics. However, we must also consider a possible change in activation energy arising from the decreased electron energy (increased stabilization) due to higher work function. If this caused a change in activation energy it would be expected to be in the opposite direction to the change due to Galvani potential, since it would be expected to lower the initial free energy by a greater amount than that of the transition state.The presentation will consider in detail the interplay of these effects and the consequent implications for modelling electrode kinetics. K. S. R. Dadallagei, D. L. Parr IV, J. R. Coduto, A. Lazicki, S. DeBie, C. D. Haas, and J. Leddy, J. Electrochem. Soc. 170, 086508 (2023)

Data-driven deep learning prediction of boron-doped graphene work function

The atomic-scale doping plays a crucial role in determining the work function of doped graphene. However, it is a challenge to comprehensively investigate its work function due to the large range of possible molecular configurations. In this study, more than 30,000 pieces of data of the work functions from boron-doped graphene with different doping concentrations and positions is calculated via DFT, and the dataset is further expanded to 115,000 based on the molecular structural symmetry. Then, a simple structural descriptor-based method is developed to characterize the surface of the doped graphene. Finally, a deep learning model is proposed to predict the work function. The results show that the proposed model can accurately predict the work function with the R2 > 0.95 and MSE < 0.0013 for a 3×3 supercell. In addition, this study also provides the possibility to quickly investigate the work function of other heteroatom 2D materials.

Enhancing Pb-free inorganic perovskite solar cell using carbon as metal back contact and molybdenum trioxide as hole transport layer

Inorganic Pb-free perovskite solar cells have appeared in recent years as a promising and environmentally friendly technology in photovoltaics. In this study, we conducted a comprehensive simulation investigation using SCAPS-1D software to optimize Pb-free inorganic perovskite solar cells, focusing specifically on the use of RbGeI3 as the absorber material in the FTO/TiO2/RbGeI3/MoO3/C device architecture. The carbon back contact in this configuration stands out for its cost-effectiveness and durability. Our research focused on the influence of various critical parameters, including the thickness of the absorber, electron affinity of ETL and HTL, series, and shunt resistances, back-contact material work functions, and operating temperatures. This achieved a PCE of 29.47 %, FF of 78.22 %, VOC of 1.111 V and JSC of 33.91 mA/cm2. The results indicate that perovskite solar cells using RbGeI3 as an absorber material exhibit improved performance and good thermal stability, underlining the great potential of this material. In addition, the eco-friendly characteristics of these Pb-free inorganic perovskite solar cells hold great promise for advancing the field of clean energy conversion technologies, marking an important step towards sustainable and efficient energy solutions.

Improvement of the thermionic emission properties of C12A7 electride

Calcium aluminate electride (named as C12A7) has become an active topic as a material for electron emission in the research field of electron sources, especially for electric propulsion, in recent years. Whereas the initially predicted, extremely low work function of 0.6 eV could not be confirmed experimentally at technically relevant surface current densities, the material remains an attractive emitter. Besides C12A7 emitting electrons at lower temperatures compared to LaB6, it appears to be resistant to poisoning and even iodine compatible as only known low work function material. On the other hand, the ceramic electride nature of the emitter introduces challenges related to the thermal, mechanical and electrical properties. Therefore, C12A7 has been investigated experimentally as a candidate material for thermionic emitters in space applications. The aim of this study was to enhance the thermionic emission by material modifications such as surface treatments, electrical contacting methods and doping of the C12A7. The performance improvement was quantified in a thermionic diode configuration, in which the emission current was determined as a function of temperature over multiple heating cycles to observe time dependent effects. The surface treatment such as grinding or polishing affects the emission properties of the C12A7 negatively. In contrary, the doping of the C12A7 lattice as well as the contacting of the back side (heater side) significantly improved the emission as well as the measured current density.

Ligand Driven Control and F‐Doping of Surface Characteristics in FASnI3 Lead‐Free Perovskites: Relation Between Molecular Dipoles, Surface Dipoles, Work Function Shifts, and Surface Strain

AbstractThe performance and operational stability of perovskite‐based devices heavily rely on the interfacial properties between the photoactive perovskite layer and charge transport layers. Understanding the theoretical relationship between surface/interface dipoles and surface energetics is crucial for scientific understanding and practical applications. In this study, a method is applied that bridges classical electromagnetism and modern atomistic approaches. The impact of dipolar ligand molecules functionalizing the FASnI3 perovskite surface is investigated, with inspection of the interplay between surface dipole, charge transfer, and local strain effect, and corresponding shifts in the valence level. The results reveal that the contribution of individual molecular entities to surface dipoles and electric susceptibilities follows an essentially additive behavior. The influence of F doping usually used to mitigate Sn oxidation in Sn‐based layer for photovoltaic applications, is also discussed. Furthermore, the findings are compared with predictions from classical approaches employing a capacitor model that links the induced vacuum level shift and the molecular dipole moment. The insights gained from the study provide theoretical guidelines for fine‐tuning the work functions of materials, thus enabling effective interfacial engineering in this class of semiconductors.

Fabrication of monolayer h-BN/LaB6 heterostructure thin film with low work function and high chemical stability

To expand the applications of low work function materials, high chemical stability is necessary to prevent the surface from unfavorable reactions. We developed a 20-nm-thick lanthanum hexaboride (LaB6) thin film covered by a monolayer hexagonal boron nitride (h-BN), which exhibits not only low work function but also high chemical stability. Results demonstrated that the h-BN/LaB6 heterostructure can be formed by vacuum annealing a nitrogen-doped LaB6 thin film. The formation process was investigated using Auger electron spectroscopy (AES), high-resolution electron energy loss spectroscopy (HREELS), and X-ray absorption near edge structure (XANES) spectroscopy. We have elucidated that the doped nitrogen atoms and boron atoms in the film thermally diffuse into the surface during annealing, thereby forming the monolayer h-BN on the surface. Work function was measured using scanning tunneling microscopy (STM). From a practical perspective, chemical stability was evaluated with a heating temperature necessary for restoring the low work function state after air exposure. The work function was comparable to that of the clean LaB6(100) surface. Moreover, it recovered at a much lower temperature than the cleaning temperature of the LaB6(100) surface. We anticipate that this material development will facilitate implementation of the low work function material.

CH3NH3SnI3${\mathrm{CH}}_{\mathrm{3}}{\mathrm{NH}}_{\mathrm{3}}{\mathrm{SnI}}_{\mathrm{3}}$: Superior Light Absorption and Optimized Device Architecture with 31.93% Efficiency

AbstractThis research investigates and optimizes the perovskite solar cells. Initially, optoelectronic parameters of perovskite absorber materials, including , , and , are estimated using Density Functional Theory (DFT) principles implemented in the Quantum Espresso software. The absorption of light energy is examined, detailing electron transitions between the highest p energy states of halogens (I, Br, and Cl) in the VB and the lowest 5p energy states of tin in the CB. shows superior optical characteristics, surpassing and , and demonstrating more effective absorption within the visible spectrum than . Subsequently, a numerical analysis is conducted for a P–I–N configuration Fluorine doped Tin Oxide (FTO)////Anode using SCAPS‐1D software. The optimization process focuses on absorber thickness, defect density, acceptor density, and the work function (WF) of the anode materials. Simulation findings recommend a defect density () of for optimal performance, coupled with an absorber thickness of 1 µm. Examining the transformation from to through oxidation reveals that reducing the concentration of acceptors in the absorber layer (NA) significantly enhances device performance. Superior performance is achieved by a high WF anode material. This study not only contributes to advancing our understanding of lead‐free perovskite optoelectronics but also provides valuable insights for the development of highly efficient and stable solar cells.

Synthesis, characterization and estimation of performance parameters of binary ZnO–SnO2/p-Si heterojunction solar cells

The present work demonstrates the successful synthesis of binary ZnO–SnO2 nanocomposite employing a simple and efficient sol-gel method. The XRD spectra confirmed the formation of a highly crystalline domain indexed to (100) planes of ZnO and (101) and (310) planes of SnO2. The UV–vis spectroscopy analysis revealed high transmittance over 85 % and good optical absorption, a desirable aspect for efficiency enhancement of the cell by heightened photo-excited charge carrier generation through an increased number of incident photons being striking at the junction. The optical band gap was determined using the Taucs formula and found to be 3.51 eV. To probe the possible application of ZnO–SnO2 in Heterojunction Solar Cells (HJSCs), we carried out a numerical simulation for the estimation of cell parameters using MATLAB. The result revealed that the work function (WF) does not have a significant effect on short circuit current density (Jsc), whereas the open-circuit voltage (Voc), fill factor (FF) and power conversion efficiency (PCE) significantly depend on the material work function. Typically VOC increased from 0.155 V to 0.665 V, FF increased from 0.586 to 0.838 and the PCE could be enhanced from 2.55 % to 15.74 %, with an estimated WF range of 4.5 eV–4.0 eV. The effect of substrate thickness was also studied, indicating increment in parameters in the range from 25 μm to 200 μm, however, no significant effect was noticed for thickness >200 μm. The simulation provides optimization of semiconductor properties through the estimation of cell parameters such as PCE, Voc, Jsc and FF for enhanced performance.

Reduced Work Function in Anatase ⟨101⟩ TiO2 Films Self-Doped by O-Vacancy-Dependent Ti3+ Bonds Controlling the Photocatalytic Dye Degradation Performance.

TiO2 has the proven capability of catalytically decomposing pollutants under light illumination, thereby embracing potential applications in wastewater management. The photocatalytic dye degradation activity is largely controlled by the optical band gap that dictates the extent of electron-hole pair generation via photon absorption, and the recombination kinetics of charges. In this context, the material's work function governs how easily the charge carriers can be transferred at the dye-adsorbed photocatalytically active sites. Accordingly, nanocrystalline TiO2 thin films are grown in the anatase phase with ⟨101⟩ orientation, using RF magnetron sputtering at 200 °C. Besides studying the film's structural morphology, optical band gap, and elemental composition, the electronic properties are extensively investigated. The work function of the material was controlled by varying the O-vacancy-dependent Ti3+ bonding configuration in the network. It has been demonstrated how the photocatalytic methylene blue dye degradation activity of the nanocrystalline TiO2 films of predominantly the anatase phase improves on reducing the sputtering pressure during deposition. At a low deposition pressure of 20 mTorr, a low work function of ∼4.2 eV of the film, resulting from the formation of a Ti3+-bond through the O vacancies in the network, potentially increases its carrier lifetime and delivers the superior photocatalytic activity (∼82.7% dye degradation with a rate constant of k ∼ 0.0073 min-1) via silently facilitating fast electron transfer from the photocatalyst to the dye in the aqueous solution. The higher stoichiometric film prepared at p = 40 mTorr exhibits an inferior photocatalytic activity (∼20.4% dye degradation with a rate constant of k ∼ 0.0009 min-1), as retarded by its higher work function of ∼4.62 eV, despite retaining a relatively low band gap. Thus, without using any heterojunction or extrinsically doped photocatalyst, the dye degradation can be controlled simply by reducing the work function of nanocrystalline TiO2 thin films via controlling the O-vacancy-dependent Ti3+ bonding in its self-doped network.

Dynamic Change of the Work Function of Plasma Electrode Materials due to Hydrogen Plasma exposure

It has been known that the work function of plasma electrode (PE) surfaces such as Cs-covered Mo and C12A7-electride can be decreased when the surfaces are immersed in hydrogen (or deuterium) plasma. We discovered that the work function of the C12A7-electride changed right after the termination of plasma exposure with the time constant of a few minutes. This phenomenon was not observed on the surface of clean metals (Mo or Ta). By extrapolating the dependence of work function against time to determine the value at the plasma termination, the work function during plasma exposure was estimated to be 2.4 – 2.5 eV, which can be compared with the value of the electride exhibiting metallic conductivity.

Enabling of CMOS Circuit using Dual Material Gate Germanium Pocket Induced FDSOI MOSFET

This research presents a comparison of the electrical performance of a double-side induced germanium-pocket (IGP) FD-SOI MOSFET and a dual material gate IGPFDSOI (DIGPFDSOI). The electrical performance is reviewed by comparing the device parameters like drain current, band diagram, lateral electric field, surface potential, and work function of the gate material. The proposed structure exhibits excellent characteristics compared to the IGPFDSOI MOSFET. The proposed structure has a greater Ion/Ioff ratio, a lower subthreshold slope, reduced capacitance, and an elevated cut-off frequency. The implementation of a dual metal gate is considered a superior method in comparison to FD-SOI technology because it effectively reduces the negative effects of scaling. A study is being done to analyze the differences in the work functions of metal gates to evaluate the effectiveness of the proposed construction. The comparison evaluation shows that the suggested design can be used for both digital and analog tasks because it has a higher switching frequency and a better cut-off frequency. Apart from this, the proposed structure can also be implemented without making substantial changes to the conventional FD-SOI MOSFET fabrication process flow. Here, we are using n-type and p-type DIGPFDSOI MOSFETs to make a CMOS converter circuit. Sentaurus TCAD is used to simulate and analyze the performance of the proposed structure.

Multilayers strategy with a mixed CdTe/ZnTe absorber layer for optical trapping and efficiency improvement in CdTe-based solar – SCAPS modelling

This work is a theoretical contribution to improving the performance of CdTe-based thin-film solar cells (TFSC) by optimising the collection of photons in the absorber structure. The basic data are retrieved from experimental reference work and the reference structure is as follows: CdS/CdTe/ZnTe with an efficiency of 20.16%, where ZnTe is used as a BSF to limit backward recombination. The first approach is to incorporate a ZnTe thin layer at the CdS/CdTe heterojunction, to subdivide the CdTe active layer into two (02) sub-layers and to identify the optimum structure as a function of their position in the stack. Investigating the work function of back contact materials enables to better enhance the device′s performance and stability. To take into consideration the discontinuities in the material properties, grain boundaries and performance loss factors, the impacts of charge carrier capture cross sections, bulk and interfacial defects are investigated. SCAPS software is employed for all the numerical modelling, which enables to calculate the current-voltage (J-V), power-voltage (P-V), external quantum efficiency (EQE) and other PV parameters and to draw energy band diagram to better appraise charge carrier transportation. The doping level in the CdTe active layer, the thicknesses and external temperature are also investigated to optimize our device properties. In terms of the obtained fill factor (FF) and efficiency (PCE), the performances were improved with the following structure CdS/CdTe/ZnTe/CdTe/ZnTe, FF = 81.6% and PCE = 23.45%, with 500 nm thickness of CdTe. These results are opening a promising new perspective in high efficiency CdTe TFSC.

Enabling low-power analog and RFIC design through advanced semiconductor FDSOI MOSFETs

This study investigates the electrical performance of advanced semiconductor Ge-pocket-doped fully depleted silicon-on-insulator MOSFETs in comparison to conventional fully depleted silicon-on-insulator (FDSOI) MOSFETs. In this study vital electrical parameters such as the drain current, band diagram, lateral electric field, surface potential, and work function of the gate material were investigated. The advanced Ge pocket-doped FDSOI MOSFET structure demonstrates superior characteristics, such as a higher Ion/Ioff ratio, smaller subthreshold slope, lower capacitance, and higher cut-off frequency, when compared to conventional FDSOI MOSFETs. The structure of the Ge pocket-doped FDSOI MOSFET in the source and drain regions is designed to overcome the scaling effects of the transistor. In addition, this paper delves into the fabrication of the proposed device structure, outlining the key steps and intricacies involved. This study shows that the proposed device can be used for both digital and analog applications because it has good switching performance and a low cut-off frequency. In addition, the fabrication steps of the proposed structure were compatible with the existing fabrication process steps for conventional FDSOI MOSFETs. The simulation and analysis of the advanced semiconductor structure were performed using the Sentaurus TCAD simulator.