Wide Input Power Range Research Articles

High-Efficiency 5G-Band Rectifier with Impedance Dispersion Compensation Network

This paper proposes a microwave rectifier designed for the popular 5G band, featuring impedance dispersion compensation and a cross-type impedance matching network. The rectifier has an ultra-high power conversion efficiency. The compensation network employs two parallel transmission lines to counteract the nonlinear shift of the diode input impedance caused by frequency variation. Additionally, the cross-over impedance matching network enhances matching and minimizes losses. After rigorous theoretical analysis and simulation, the rectifier is fabricated. Experimental results show significant conversion efficiency in the 5G band (across 4–6.5 GHz). At an input power of 12 dBm, the rectifier achieves more than 60% efficiency between 4.8 and 6.4 GHz and more than 70% between 5.2 and 6.2 GHz, with a peak efficiency of 78.1%. Moreover, the rectifier maintains more than 50% efficiency over a wide input power range of 5 to 14 dBm.

Efficient rectifier with wide input power range for 5G applications

This article presents three efficient rectifiers for radio frequency energy harvest-ing (RFEH) systems operating at the fifth generation (5G) band (3.5 GHz). Eachrectifier operates at various input power levels (high, low, and across a widepower range). The high and low-power rectifiers feature a single serial topologyusing HSMS-2860 and SMS-7630 Schottky diodes, respectively, along with mi-crostrip lines to implement the input and output filters and the impedance match-ing network. At an radio frequency (RF) power level of 15 dBm, the high-powerrectifier harvests 67.4% to direct current (DC) power with a 300Ωload resistorand an output voltage of 2.5V. The low-power rectifier achieves its maximumpower conversion efficiency (PCE) at -2 dBm, reaching 45% efficiency with a1200Ωload. The rectifier with a extended input power range comprises twobranches of subrectifiers functioning at both high and low power levels. De-pending on the power level, the considered subrectifier harvests radio frequencypower into DC power, while the other subrectifier is deactivated. Across a powerspan of 32.5 dB (ranging from -13 to 19.5 dBm), the rectifier maintains an effi-ciency above 30%. The proposed rectifiers are efficient and suitable for imple-mentation in 5G-enabled RFEH systems.

High efficiency dual‐band rectifiers with wide input power range for wireless power transfer

High efficiency dual‐band rectifiers with wide input power range for wireless power transfer

A compact rectifier with wide dynamic range of input power based on two-port impedance compression matching network for RF energy harvesting

A compact rectifier with wide dynamic range of input power based on two-port impedance compression matching network for RF energy harvesting

Ultra-wideband rectenna with the dual ground plane for wide dynamic input power and load range

ABSTRACT The ultra-wideband rectenna is designed to have a fractional bandwidth of more than 100%, allowing it to work from 1.4 GHz to 5.4 GHz, with a bandwidth of 4 GHz. The proposed design involves a square patch antenna that incorporates an inverted L-slot and utilises dual ground planes in the form of rectangular and semi-octagonal shapes. The intended rectenna simultaneously harvests energy from various frequency bands, including GSM 1800 MHz, UTMS 2100 MHz, ISM 2450 MHz, 2800 MHz, and 3600 MHz. The proposed rectifier circuit incorporates three impedance-matching (IM) branches, which effectively mitigate the nonlinear attributes of the rectifier system and ensure favourable IM across a broad spectrum of frequencies. The DC combining technique is employed to attain favourable conversion efficiency. The CE in the GSM 1800 MHz band was measured to be 74%. The CE in the UTMS 2100 MHz band was measured to be 66%. In the ISM2450 MHz frequency band, a CE of 76% was measured. The CE in the 2800 MHz frequency band was determined to be 67.5%. At 3600 MHz, the measured CE is recorded as 67%. The obtained optimal load value is 470 Ω and it provides more than 65% conversion efficiency (CE) at all the intended frequency bands. The proposed rectenna demonstrates an CE exceeding 50% across the entire range of input power level (IPL) variations from 0 to 11 dBm. Furthermore, it achieves an efficiency surpassing 60% when subjected to load variations ranging from 270 Ω to 750 Ω.

High-Efficiency Wide Input Power Range Three-Phase Radio Frequency Energy Harvester for IoT Applications

High-Efficiency Wide Input Power Range Three-Phase Radio Frequency Energy Harvester for IoT Applications

Experimental characterization of an ammonia – water – hydrogen diffusion absorption refrigeration system

A diffusion absorption refrigerator (DAR) is a heat powered refrigeration system. It uses the ammonia-water mixture as a working fluid in addition to an auxiliary inert gas. In the present work, experimental investigation and dynamic analysis of the H2O-NH3-H2 diffusion absorption refrigeration system have been carried out using different values of thermal power input to the generator and evaporator load. Experimental results show that the temperature evolution of system components, transient response, amount of cooling below ambient, and coefficient of performance are significantly sensitive to the values of generator power input and evaporator load. Analysis of DAR system behavior for different start up conditions is used to estimate the time and energy required for the initiation of cooling effect. Steady-state experimental results obtained over a wide range of generator input power and evaporator load are used to characterize the unit performance. Performance maps useful for the design and integration of DAR systems with low-temperature energy sources are developed. These maps can be used to estimate the generator input power required for a given cooling load at a specified value of cooling temperature below ambient.

A high-efficiency burst mode boost converter with a sharing main power NMOS for start-up

This paper presents a high-efficiency boost converter with a wide input range and a start-up strategy of sharing main power NMOS which can start-up at an input voltage of 700 mV. A burst mode with boundary conduction mode (BMBCM) control is utilized in the proposed boost converter to achieve high efficiency across the wide input power range. A method is also suggested to determine the optimal peak inductor current for a given input range. Compared to other start-up strategies, the proposed start-up circuit reduces chip area by sharing the main power NMOS with the normal operation mode, eliminating the need for an additional start-up power transistor. A new ultra-low-power voltage detection circuit is used to control the start-up process. The proposed boost converter is designed and fabricated in a 180 nm BCD process with an active chip area of only 0.33 mm2. The circuit achieves a peak efficiency of 94.8% at an input voltage of 3 V and an output voltage of 3.6 V, while maintaining an efficiency of at least 65.9% across the input power range of 7 μW to 300 mW.

Hybrid-Type Dual Active Bridge DC–DC Converter for Ultrawide Input-Voltage Range

This paper proposes a hybrid-type dual active bridge (H-DAB) topology and extended gain control (EG) method applied to the ultra-wide input-voltage range. The H-DAB is obtained by adding an auxiliary half-bridge to the conventional current-fed dual active bridge (CF-DAB) topology. The auxiliary half-bridge can assist the CF-DAB to achieve ZVS on the one hand, and further expand the voltage gain range on the other. The proposed extended gain control (EG) expands the input voltage range of ZVS for all switches by calculating the optimal intermediate bus voltage. In addition, the backflow power has also been drastically reduced. The proposed piecewise control strategy simplifies the complexity of control. The proposed topology and the control method are verified by the experimental results of a 500 W prototype. The input voltage range is 27 – 240 V and the output voltage is 375 V. The experimental results proved that the proposed scheme achieves ZVS of all switches in a wide input voltage range and power range, and the efficiency is improved.

Effect of Gain Saturation on Wideband WDM Signal in PPLN-Based Optical Parametric Amplifier

The periodically poled LiNbO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> (PPLN) based optical parametric amplifier (OPA) is a technology that contributes to the construction of multi-band wavelength-division multiplexing (WDM) optical networks thanks to its wide amplification bandwidth and wavelength conversion function. In addition, the fast response of the OPA means it is unaffected by sudden changes of wavelength channels due to dynamic channel add-drop. However, such fast response leads to nonlinear signal distortion when operating in the gain saturation region. This paper experimentally investigates the conversion of gain saturation into the nonlinear amplitude distortion in a 64-Gbaud 64QAM WDM signal. We characterized the input power tolerance of a PPLN-based OPA in wideband WDM applications and found that the nonlinear amplitude distortion can be suppressed by increasing the number of WDM channels. For a 75-GHz-spacing 64-channel WDM configuration, the total input power tolerance was improved by ∼10 dB compared to a single-channel case. We also confirmed that there is almost no wavelength dependence of the effect of gain saturation on the signal distortion. These results show that PPLN-based OPAs have a wide total input power range for amplifying wideband WDM signals in terms of the nonlinear distortion.

A Compact Low-Loss Reflection-Type Harmonic Transponder for Battery-Less RFID Sensors Based on Harmonic Backscattering

This study presents a compact reflection-type harmonic transponder with a wide input power range for battery-less radio frequency identification (RFID) sensors based on harmonic backscattering. Miniaturizing the circuit size of conventional harmonic transponders is difficult because the input and output matching stages are configured separately, and two antennas are used for each port. The proposed harmonic transponder based on a dual-band matching network matches the load simultaneously at the fundamental and second harmonic frequencies over a wide input power range, thus enhancing the conversion gain (CG) with a compact size. For verification, the proposed transponder is implemented in a compact size with dimensions of 19 mm × 17.8 mm. The measured CG of the implemented transponder is maintained at over −10 dB in the wide input power range of −6.4 dBm to 10.6 dBm at 2.45 GHz. Th e harmonic transponder is configured with a dual-band chip antenna and measured in free space to verify whether it is suitable for battery-less RFID sensors. The measured detectable effective distance to the proposed circuit is 6.3 m in free space, with an equivalent isotropically radiated power of 42.6 dBm.

High-efficiency 2.45 and 5.8 GHz dual-band rectifier design with modulated input signals and a wide input power range

&lt;span lang="EN-US"&gt;This paper presents a new rectifier design for radio frequency (RF) energy harvesting by adopting a particular circuit topology to achieve two objectives at the same time. First, work with modulated input signal sources instead of only continuous waveform (CW) signals. Second, operate with a wide input power range using the Wilkinson power divider (WPD) and two different rectifier diodes (HSMS2852 and SMS7630) instead of using active components. According to the comparison with dual-band rectifiers presented in the literature, the designed rectifier is a high-efficiency rectifier for wide RF power input ranges. A peak of 67.041% and 49.089% was reached for 2.45 and 5.8 GHz, respectively, for CW as the input signal. An efficiency of 72.325% and 45.935% is obtained with a 16 QAM modulated input signal for the operating frequencies, respectively, 69.979% and 54.579% for 8PSK. The results obtained demonstrate that energy recovery systems can use modulated signals. Therefore, the use of a modulated signal over a CW signal may have additional benefits.&lt;/span&gt;

Design of high-efficiency circularly polarized wideband energy harvesting rectenna using characteristic mode analysis

This paper presents a compact wideband rectifier system for wireless energy harvesting. The presented rectifier system is completed in two stages. In the first stage, a crescent-shaped wideband circularly polarized antenna (CPA) is designed to receive and transmit RF signals using characteristic mode analysis (CMA). And the CPA consists of a monopole antenna at the top and a slot antenna at the bottom, which control the higher and lower operating bands, respectively. In the second stage, a wideband rectifier is designed using a HSMS-2860 Schottky diode and a three-stage matching network. The HSMS-2860 Schottky diodes improve rectification efficiency at medium-power density, and the three-stage matching network effectively increase the operating bandwidth, filter out the output RF signal, and cancel out and stabilizes the impedance. To validate the proposed rectifier system, a crescent-shaped CP receiving antenna and a rectifier operating in C-band are fabricated, and the rectification performance is measured. The measurement results indicate that the proposed rectifier system harvests RF signals on the broadside and backside of the CPA over a wide input power range (8–13 dBm input power).

A 200 MHz Passive Rectifier With Active-Static Hybrid VTH Compensation Obtaining 8% PCE Improvement

This work presents a passive rectifier system operating at 200MHz for implantable medical devices. In the CMOS passive rectifier, the gates of NMOS and PMOS are biased separately by using RC networks. In the rectifier, the bias resistor is divided into several pieces and implemented over individual deep N-well (DNW). In this way, the AC losses on the resistors can be reduced. To further improve the power conversion efficiency (PCE) of the rectifier, the static V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TH</sub> compensation is applied on PMOS switches based on active V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TH</sub> compensation on NMOS switches. Since the current spikes brought by the digital circuit will have a great influence on the stability of the rectifier system, a power supply isolation scheme consisting of several RC networks is proposed. The rectifier system is implemented in a 65nm general-purpose. Measurement results show that the proposed active-static hybrid V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TH</sub> compensation scheme achieves a PCE improvement in a wide input power range with a maximum of 8% PCE improvement compared to the active V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TH</sub> compensation scheme only.

Compact high‐efficiency c‐band rectifier with high input power for microwave power transmission

AbstractThis letter presents a novel C‐band rectifier that is capable of handling high input power. The rectifier consists of a Schottky diode, an impedance matching circuit with a compensation microstrip structure, and an output filter with harmonic suppression and ripple smoothing. The experimental results indicate that the rectifier yields a conversion efficiency exceeding 70% and a peak efficiency of 74.1% over a wide input power range of 20 to 26 dBm (6 dB) at 5.8 GHz, utilizing a single Si‐based Schottky diode. Furthermore, the rectifier has a compact size of 28 mm × 15 mm. Given its cost‐effectiveness and outstanding performance, this rectifier presents an attractive option for large‐scale microwave power applications.

Microwave Frequency Doubler with Improved Stabilization of Output Power

The passive multipliers based on semiconductor diodes, most frequently a Schottky type, should be driven by a certain value of input power, where the conversion losses are optimal. This means that the variation in the input power level causes the change in the output power level. A solution to this issue is the integration of an output power amplifier, which in the state of saturation provides quasi-stabilization of the output power. Practically, this approach gives an unsatisfactory performance: weak stabilization or narrow input power range. This paper comprises a concept of an active frequency multiplier with the use of one FET transistor and a special adaptive bias circuit in order to obtain a very wide input power range when the output power is stable. The principle of the operation, design guidelines, and measurement results have been presented for an example circuit of the frequency doubler. The results show the possibility to obtain up to 10 dB input power range for a 1 dB change in output power level without the use of additional amplifiers.

A Novel Self-Adaptive Rectifier with High Efficiency and Wide Input Power Range

A novel 2.45 GHz self-adaptive rectifier with high efficiency and a wide input power range is proposed in this paper. It consists of a high-power sub-rectifier branch, a low-power sub-rectifier branch, an impedance transform and isolation network (ITIN), and a feedback network. Impedance matching is realized by ITIN for both branches. The proposed design is able to switch between these two branches by the feedback network according to its output voltage level. The rectifier has been simulated, fabricated, and tested. The measured power conversion efficiency (PCE) exceeds 50% over the input power range from 5 to 29 dBm, with a total dynamic range of 24 dB. The input range when PCE exceeds 60% is from 10 dBm to 28 dBm. The maximum efficiency is 75.2% at 26 dBm input power.

Single Band EBG Antenna for Wireless Power Transfer Applications

This work demonstrates the design of a single band Electromagnetic Band Gap (EBG) antenna by employing an open stub EBG microstrip of a patch antenna for better achievements in terms of its performance to be utilized in a reconfigurable harvester to operate over a wide input power range. The EBG antenna has been used to gather RF energy and a FET-transistor has been obtainable to determine and control the power flow with the intention to operate at the same time for a different level of input power. The measured data of the EBG antenna shows a directivity of 8.52 dBi, a gain of 7.18 dBi, a return loss of −27 dB with a radiation efficiency of 84.3%, showing a clear enhancement in directivity, peak realized gain, and radiation efficiency by 41.76%, 25.61%, and 17.12% respectively compared with a regular reference antenna; without utilized the EBG structure. Moreover, the harvester design accomplishes 40% of RF-DC power conversion efficiency over a wide dynamic input power range from −15 to 27 dBm, and its peak is around 78%. The harvester is designed to work at the ISM band for 915 MHz and is suitable for Wireless Power Transfer (WPT) uses.

Compact and efficient wideband rectifier based on π network with wide input power ranges for energy harvesting

This work introduces a wideband, significant RF-DC conversion efficiency and large DC voltage radio frequency (RF) voltagemultiplier/doubler rectifier for energy harvesting (EH) systems utilizing ROG4003C material and Schottky diode. The input matching network is designed using π network and series resonance circuit. Two wideband rectifiers are designed the first one uses lumped inductors in the π network, and the second design employs distributed rectangular inductors. The π network is connected in series with a Schottky diode to compensate its capacitive reactance, diminish its impedance variation when the frequency or input power varies while the series resonance circuit is used to match the minimized variance to the source impedance (50 Ω). An HSMS2852-based rectifier prototype is tested for verification, obtaining a bandwidth of 31.6 % from 720 to 1050 MHz with 68 ± 2 % at an input power of 3 dBm with a peak saturated DC voltage of 3.6 V and an input return loss (S11) less than −10 dB.The proposed rectifiers provide good performance over a wide input power range between −10 dBm and 5 dBm via various load terminals ranging from 2.5Kohms to 10Kohms. The proposed rectifier is suitable for GSM 900, IoT, UHF ISM 900 MHz, WSN, broadband LTE, and multi-standard systems. Finally, the introduced voltage doublers have a compacted area equal to 1.85 cm2.

Self-adaptive passive temperature management for silicon chips based on near-field thermal radiation

Temperature management in modern instruments is often a great task, particularly for silicon chip technologies against the background of the ever-increasing demanding for larger scale and higher density electronics integration. Enormous efforts have been made to solve this long-pending issue, mostly relying on active equipment that consume more energy and more space. Here, a compact thermal management technique for silicon chips is proposed, which is able to passively maintain the operation temperature of targets within a wide range of input power. The core part is a self-adaptive near-field thermal radiation system made of a phase-changeable metasurface and graphene/hBN heterostructure with surface plasmon/phonon modes. Numerically, we show that integrated with such a setup, a 0.1-mm thick silicon substrate could automatically maintain its operation temperature within a narrow window (∼333 ± 7 K) when loaded with heat power varied in 0.1–1 W cm−2. As a comparison, the temperature will change 614 or 319 K for a bare or blackbody-coated silicon substrate. The dynamic process of thermal homeostasis is discussed by using the transient thermal equation. The results imply that the current design is suitable for providing a compact, conformal thermal functional coat to passively manage temperatures of heated electronic components, particularly in vacuum.