Wide Range Of Growth Temperatures Research Articles

Bismuth surfactant enhancement of surface morphology and film quality of MBE-grown GaSb(100) thin films over a wide range of growth temperatures

We investigate the surface morphologies of two series of homoepitaxial GaSb(100) thin films grown on GaSb(100) substrates by molecular beam epitaxy in a Veeco GENxplor system. The first series was grown at temperatures ranging from 290 to 490°C and serves as a control. The second series was grown using the same growth parameters with bismuth used as a surfactant during growth. We compared the two series to examine the impacts of bismuth over the range of growth temperatures on the GaSb surface morphologies using atomic force microscopy and the film properties using Raman spectroscopy and scanning electron microscopy. High-resolution x-ray diffraction was performed to confirm that bismuth was not incorporated into the films. We found that the morphological evolution of the GaSb series grown without bismuth is consistent with the standard surface nucleation theory and identified the 2D-3D transition temperature as close to 290° C. In contrast, the presence of a Bi surfactant during growth was found to significantly alter the surface morphology and prevent undesired 3D islands at low temperatures. We also observed a preference for hillocks over step morphology at high growth temperatures, antistep bunching effects at intermediate temperatures, and the evolution from step-meandering to mound morphologies at low temperatures. This morphological divergence from the first series indicates that bismuth significantly increases in the 2D Erlich–Schwöebel potential barrier of the atomic terraces, inducing an uphill adatom flux that can smoothen the surface. Our findings demonstrate that bismuth surfactant can improve the surface morphology and film structure of low-temperature grown GaSb. Bismuth surfactant may also improve other homoepitaxial III-V systems grown in nonideal conditions.

Fabrication of Crystalline Si Thin Films for Photovoltaics

Crystalline Si (c‐Si) thin films have been widely studied for their application to solar cells and flexible electronics. However, their application at large scale is limited by their fabrication process. As reviewed in this paper, many approaches have been studied, but only some of them have been made into large‐scale industrial production. The standard wire sawing of Si ingots cannot be scaled down to produce thin c‐Si wafers and films due to the brittle nature of c‐Si material, the resulting significant thickness variations, and the waste of material. Therefore, techniques based on the kerf‐less processes including “top‐down” and “bottom‐up” approaches have been developed in recent decades. In this review, photovoltaic applications of thin c‐Si wafers with thicknesses ranging from 50 μm down to 1 μm are presented first. Then, methods to fabricate c‐Si thin films based on both approaches are detailed, including slim‐cut, “smart‐cut,” epi‐free, as well as various growth processes such as molecular beam epitaxy, liquid phase epitaxy, ion beam, and chemical vapor deposition processes at a wide range of growth temperatures, from 1000 °C down to 150 °C. The advantages and disadvantages of these methods are presented and compared.

Consideration of the Intricacies Inherent in Molecular Beam Epitaxy of the NaCl/GaAs System.

The high cost of substrates for III–V growth can be cost limiting for technologies that require large semiconductor areas. Thus, being able to separate device layers and reuse the original substrate is highly desirable, but existing techniques to lift a film from a substrate have substantial drawbacks. This work discusses some of the complexities with the growth of a water-soluble, alkali halide salt thin film between a III–V substrate and overlayer. Much of the difficulty stems from the growth of GaAs on an actively decomposing NaCl surface at elevated temperatures. Interestingly, the presence of an in situ electron beam incident on the NaCl surface, prior to and during GaAs deposition, affects the crystallinity and morphology of the III–V overlayer. Here, we investigate a wide range of growth temperatures and the timing of the impinging flux of both elemental sources and high energy electrons at different points during the growth. We show that an assortment of morphologies (discrete islands, porous material, and fully dense layers with sharp interfaces) and crystallinity (amorphous, crystalline, and highly textured) occur depending on the specific growth conditions, driven largely by changes in GaAs nucleation which is greatly affected by the presence of the reflection high energy electron diffraction beam.

Scanning probe analysis of twisted graphene grown on a graphene/silicon carbide template

Overlayer growth of graphene on an epitaxial graphene/silicon carbide (SiC) as a solid template by ethanol chemical vapor deposition is performed over a wide growth temperature range from 900 °C to 1450 °C. Structural analysis using atomic force and scanning tunneling microscopies reveal that graphene islands grown at 1300 °C form hexagonal twisted bilayer graphene as a single crystal. When the growth temperature exceeds 1400 °C, the grown graphene islands show a circular shape. Moreover, moiré patterns with different periods are observed in a single graphene island. This means that the graphene islands grown at high temperature are composed of several graphene domains with different twist angles. From these results, we conclude that graphene overlayer growth on the epitaxial graphene/SiC solid at 1300 °C effectively synthesizes the twisted few-layer graphene with a high crystallinity.

High-resolution RHEED analysis of dynamics of low-temperature superstructure transitions in Ge/Si(001) epitaxial system

In this paper, we analyze superstructural transitions during epitaxial growth of two-dimensional layers and the formation of quantum dots by the Stranski–Krastanov mechanism in elastically stressed systems by the reflection high-energy electron diffraction method. Detailed dependences of the periodicity parameter N of the 2 × N reconstruction on the effective thickness of the deposited material in a wide range of growth temperatures during epitaxy of germanium on a silicon surface with a crystallographic orientation (001) are obtained. Superstructural transitions and the change in the value of the parameter N at low temperatures of epitaxy in this system have been investigated for the first time. It is shown that the length of dimer rows in such a reconstruction during the growth of pure germanium on silicon can reach a value of no less than N = 11. A relationship is found between the value of the parameter N, determined by elastic strains in the system, and the critical thickness of the transition from two-dimensional to three-dimensional growth. Based on this relationship, a physical mechanism is proposed that explains the nature of the temperature dependence of the critical thickness of the Stranski–Krastanov transition, which has been the subject of constant scientific disputes until now.

Plasma assisted molecular beam epitaxial growth of GaN with low growth rates and their properties

A systematic investigation on PA-MBE grown GaN with low growth rates (less than 0.2 µm/h) has been conducted in a wide growth temperature range, in order to guide future growth of sophisticated fine structures for quantum device applications. Similar to usual growths with higher growth rates, three growth regions have been revealed, namely, Ga droplets, slightly Ga-rich and N-rich 3D growth regions. The slightly Ga-rich region is preferred, in which GaN epilayers demonstrate optimal crystalline quality, which has been demonstrated by streaky RHEED patterns, atomic smooth surface morphology, and very low defect related yellow and blue luminescence bands. The growth temperature is a critical parameter to obtain high quality materials and the optimal growth temperature window (~ 700–760 °C) has been identified. The growth rate shows a strong dependence on growth temperatures in the optimal temperature window, and attention must be paid when growing fine structures at a low growth rate. Mg and Si doped GaN were also studied, and both p- and n-type materials were obtained.

Diffusion processes in germanium and silicon films grown on Si3N4 substrates

In this article, the results of investigation of processes occurring during the molecular-beam deposition of germanium layers on Si$_3$N$_4$ dielectric substrates within a wide range of the Ge film growth temperatures (30 to 600{\deg}C) are presented. The intensity of the IR absorption bands related to the vibrations of the N$-$H and Si$-$N bonds are established to decrease with the increase of the Ge deposition temperature. It appears that this phenomenon cannot be explained only as a thermally activated process. Simultaneously, the peak corresponding to the Ge$-$N vibration bonds emerges in the X-ray photoelectron spectra. We suppose that the deposition of germanium layers on Si3N4 dielectric substrates containing hydrogen atoms causes the diffusion of hydrogen atoms from the dielectric layer into the growing film. The experimental results may be interpreted in terms of a model, according to which the migration of hydrogen atoms from the Si$_3$N$_4$ layer into the growing germanium film is due to the difference in chemical potentials of hydrogen atoms in the dielectric layer and the germanium film. This process initiates the diffusion of germanium atoms in the opposite direction, into the Si$_3$N$_4$ layer, where they connect to free bonds of nitrogen atoms arising due to the escape of hydrogen atoms. The analogous processes occur during the deposition of silicon layers on Si$_3$N$_4$ substrates.

Characterization of Chlorella sorokiniana and Chlorella vulgaris fatty acid components under a wide range of light intensity and growth temperature for their use as biological resources

This study aims to characterize the potential of three strains of microalgal species (Chlorella sorokiniana KNUA114 and KNUA122; C. vulgaris KNUA104) for use as feedstock, based on their fatty acid compositions. Each strain was molecularly identified using four marker genes (ITS, SSU, rbcL, and tufA) and phylogenetically characterized. C. sorokiniana and C. vulgaris collected from Ulleung Island, South Korea, were homologous with other known species groups. Samples' fatty acid components were measured using GC/MS analysis in growth temperatures of 10 °C, 25 °C, and 35 °C. The growth rate of C. sorokiniana strains was higher than that of C. vulgaris under high-temperature conditions, confirming the potential industrial applicability of the former as feedstock material. Additionally, saturated fatty acid contents and productivities increased as biological resources of the C. sorokiniana strains were higher than those of C. vulgaris under high light intensity and temperature conditions. These results suggest that the fatty acid components of C. sorokiniana strains may potentially be used as biological resources (e.g., feedstock).

Comparative Whole Cell Proteomics of Listeria monocytogenes at Different Growth Temperatures.

Listeria monocytogenes is a gram-positive, facultative anaerobe food pathogen responsible for the listeriosis that mostly occurs during the low-temperature storage of a cold cut or dairy products. To understand the systemic response to a wide range of growth temperatures, L. monocytogenes were cultivated at a different temperature from 10°C to 42°C, then whole cell proteomic analysis has been performed both exponential and stationary cells. The specific growth rate increased proportionally with the increase in growth temperature. The maximum growth rate was observed at 37°C and was maintained at 42°C. Global protein expression profiles mainly depended on the growth temperatures showing similar clusters between exponential and stationary phases. Expressed proteins were categorized by their belonging metabolic systems and then, evaluated the change of expression level in regard to the growth temperature and stages. DnaK, GroEL, GroES, GrpE, and CspB, which were the heat&cold shock response proteins, increased their expression with increasing the growth temperatures. In particular, GroES and CspB were expressed more than 100-fold than at low temperatures during the exponential phase. Meanwhile, CspL, another cold shock protein, overexpressed at a low temperature then exponentially decreased its expression to 65-folds. Chemotaxis protein CheV and flagella proteins were highly expressed at low temperatures and stationary phases. Housekeeping proteins maintained their expression levels constant regardless of growth temperature or growth phases. Most of the growth related proteins, which include central carbon catabolic enzymes, were highly expressed at 30°C then decreased sharply at high growth temperatures.

High Temperature can Change Root System Architecture and Intensify Root Interactions of Plant Seedlings

Climate change could alter plant aboveground and belowground resource allocation. Compared with shoots, we know much less about how roots, especially root system architecture (RSA) and their interactions, may respond to temperature changes. Such responses could have great influence on species'acquisition of resources and their competition with neighbors. We used a gel-based transparent growth system to in situ observe the responses of RSA and root interactions of three common subtropical plant species seedlings in Asia differing in growth forms (herb, shrub, and tree) under a wide growth temperature range of 18–34°C, including low and supra-optimal temperatures. Results showed that the RSA, especially root depth and root width, of the three species varied significantly in response to increased temperature although the response of their aboveground shoot traits was very similar. Increased temperature was also observed to have little impact on shoot/root resource allocation pattern. The variations in RSA responses among species could lead to both the intensity and direction change of root interactions. Under high temperature, negative root interactions could be intensified and species with larger root size and fast early root expansion had competitive advantages. In summary, our findings indicate that greater root resilience play a key role in plant adapting to high temperature. The varied intensity and direction of root interactions suggest changed temperatures could alter plant competition. Seedlings with larger root size and fast early root expansion may better adapt to warmer climates.

Extending the Tunable Plasma Wavelength in III–V Semiconductors from the Mid‐Infrared to the Short‐Wave Infrared by Embedding Self‐Assembled ErAs Nanostructures in GaAs

AbstractThe group III–V semiconductor photonic system is attractive to photonics engineers because it provides a complete set of photonic components. A plasmonic material that can be epitaxially integrated with the group III–V photonic system will potentially lead to many applications leveraging plasmonics and metamaterials. In this work, the shortest plasma wavelength ever reported in a III–V‐based material is demonstrated by epitaxially embedding ErAs into GaAs. This composite material acts as a tunable plasmonic material across the technologically important 2.68–6 µm infrared window. The growth window of this material is demonstrated to be much wider than other current heavily doped III–V plasmonic materials. Additionally, it is shown that the scattering rate can be reduced by increasing the growth temperature. The wide growth temperature range, designer plasmonic response, and the ease of epitaxial integration with other III–V semiconductor devices demonstrate the potential of ErAs:GaAs nanocomposites for the creation of a new type of metamaterial and other novel optoelectronic and nanophotonic applications.

Исследование морфологии поверхности, электрофизических характеристик и спектров фотолюминесценции эпитаксиальных плёнок GaAs на подложках GaAs (110)

The electrophysical and photoluminescent characteristics as well as the surface morphology of GaAs epitaxial films grown by molecular beam epitaxy on GaAs (110) substrates are studied. Silicon-doped epitaxial layers were grown in a wide range of growth temperatures from 410 to 680 °C and a ratio of arsenic and gallium fluxes from 14 to 84. The ranges of growth conditions resulting in the smoothest epitaxial films surface were estimated by atomic force microscopy. The occurrence of point defects "a Si atom in a Ga site" and "a Si atom in a As site" as well as the formation of arsenic and gallium vacancies were interpreted by analyzing the photoluminescence spectra of the grown samples.

Pulsed Laser Deposition of Rocksalt Magnetic Binary Oxides

Magnetic binary oxides with the rocksalt structure constitute an important class of materials for potential applications as electronic or electrochemical devices. Moreover, they often become a theoretical playground, due to the simple electronic and crystal structures, in the quest for novel phenomena. For these possibilities to be realized, a necessary prerequisite would be to grow atomically ordered and controllably-strained binary oxides on proper substrates. Here we systematically explore the use of pulsed laser deposition technique (PLD) to grow three basic oxides that have rocksalt structure but different chemical stability in the ambient atmosphere: NiO (stable), MnO (metastable) and EuO (unstable). By tuning laser fluence FL, an epitaxial single-phase NiO thin-film growth can be achieved in a wide range of growth temperatures 10 ≤ TG ≤750 °C. At the lowest TG, the out-of-plane strain raises to 1.5%, which is five times higher than in NiO film grown at 750 °C. MnO thin films that had long-range order were successfully deposited on the MgO substrates after appropriate tuning of deposition parameters. The growth of MnO phase was strongly influenced by FL and the TG. EuO films with satisfactory quality were deposited by PLD after oxygen availability had been minimized. Synthesis of EuO thin films at rather low TG = 350 °C prevented thermally-driven lattice relaxation and allowed growth of strained films. Overall, PLD was a quick and reliable method to grow binary oxides with rocksalt structure in high quality that can satisfy requirements for applications and for basic research.

Growth of α-Cr2O3 single crystals by mist CVD using ammonium dichromate

Ammonium dichromate and chromium chloride were examined via thermogravimetric and differential thermal analyses and used to grow α-Cr2O3 via mist chemical vapor deposition. Only the former resulted in noticeable film formation. Using ammonium dichromate, α-Cr2O3 single crystals were grown in a wide growth-temperature range of 300–440 °C. The dependences of the lattice constants a and c on the growth temperature and precursor concentration were explained by combination of (i) lattice reconstruction and (ii) unit-cell volume variation. A maximum growth rate of 10 nm/min; a low (0006) rocking-curve full width at half maximum of 150 arcsec; and low a and c lattice mismatches (with α-Ga2O3) of 0.7 and 1.4%, respectively, were achieved.

High‐Quality Indium Phosphide Films and Nano‐Network Grown Using Low‐Cost Metal‐Catalyzed Vapor–Liquid–Solid Method for Photovoltaic Applications

AbstractGrowth of high‐quality InP film is demonstrated by directly co‐evaporating elemental In and P in a simple low‐cost chemical vapor deposition (CVD) reactor. By exploring the interplay between the metal‐assisted vapor–liquid–solid and vapor–solid mechanisms, the authors present the growth of highly stoichiometric InP thin films or nano‐network in a wide range of growth temperature from 560 to 720 °C. Photoluminescence (PL) measurements reveal high optical quality of the as‐grown InP film with PL bandwidth (≈49 meV) comparable to commercial InP wafer (≈41 meV). The versatility of this approach is demonstrated through successful growth of thin films on diverse substrates such as silicon, InP, and fused quartz. The effects of catalysts are also studied by comparing growths based on Au‐catalyst with In‐self‐catalyst (without Au). The temperature dependence study of Au‐catalyzed growth shows that higher growth temperature results in formation of larger grain sizes and continuous void‐free polycrystalline InP films. Preliminary solar cell devices are fabricated on a p‐type silicon with an indium‐tin‐oxide contact layer. It is believed that the new growth strategy provides a simpler, lower cost (both precursors and substrates) approach for producing high‐quality InP thin film for the fabrication of high efficiency, low‐cost solar cells.

Plant carbon metabolism and climate change: elevated CO2 and temperature impacts on photosynthesis, photorespiration and respiration.

Contents Summary 32 I. The importance of plant carbon metabolism for climate change 32 II. Rising atmospheric CO2 and carbon metabolism 33 III. Rising temperatures and carbon metabolism 37 IV. Thermal acclimation responses of carbon metabolic processes can be best understood when studied together 38 V. Will elevated CO2 offset warming-induced changes in carbon metabolism? 40 VI. No plant is an island: water and nutrient limitations define plant responses to climate drivers 41 VII. Conclusions 42 Acknowledgements 42 References 42 Appendix A1 48 SUMMARY: Plant carbon metabolism is impacted by rising CO2 concentrations and temperatures, but also feeds back onto the climate system to help determine the trajectory of future climate change. Here we review how photosynthesis, photorespiration and respiration are affected by increasing atmospheric CO2 concentrations and climate warming, both separately and in combination. We also compile data from the literature on plants grown at multiple temperatures, focusing on net CO2 assimilation rates and leaf dark respiration rates measured at the growth temperature (Agrowth and Rgrowth , respectively). Our analyses show that the ratio of Agrowth to Rgrowth is generally homeostatic across a wide range of species and growth temperatures, and that species that have reduced Agrowth at higher growth temperatures also tend to have reduced Rgrowth , while species that show stimulations in Agrowth under warming tend to have higher Rgrowth in the hotter environment. These results highlight the need to study these physiological processes together to better predict how vegetation carbon metabolism will respond to climate change.

Hybrid Analytical–Monte Carlo Model of In/GaAs(001) Droplet Epitaxy: Theory and Experiment

We study the droplet epitaxy of indium on the As‐stabilized GaAs(001) substrate using the analytical theory of nucleation combined with kinetic Monte Carlo simulations. The developed model allows considering the atomistic processes of nucleation and growth of droplets without strict binding to the zinc blende structure. We assume that the formation of stable droplets results from the alternation of the processes of assembly and disassembly of subcritical islands. We use a concept of nonmonotonic dynamics of critical size and supersaturation to explain the physical processes on the surface. The thickness of the indium wetting layer exceeds a value of one monolayer and increases gradually with decreasing temperature, which is due to the long‐range interaction of indium with the GaAs substrate. The simulation results are in good agreement with the experiments in a wide range of growth temperatures.

Biohydrogen Production by Antarctic Psychrotolerant Klebsiella sp. ABZ11.

Lower temperature biohydrogen production has always been attractive, due to the lower energy requirements. However, the slow metabolic rate of psychrotolerant biohydrogen-producing bacteria is a common problem that affects their biohydrogen yield. This study reports on the improved substrate synthesis and biohydrogen productivity by the psychrotolerant Klebsiella sp. strain ABZ11, isolated from Antarctic seawater sample. The isolate was screened for biohydrogen production at 30°C, under facultative anaerobic condition. The isolate is able to ferment glucose, fructose and sucrose with biohydrogen production rate and yield of 0.8 mol/l/h and 3.8 mol/g, respectively at 10 g/l glucose concentration. It also showed 74% carbohydrate uptake and 95% oxygen uptake ability, and a wide growth temperature range with optimum at 37°C. Klebsiella sp. ABZ11 has a short biohydrogen production lag phase, fast substrate uptake and is able to tolerate the presence of oxygen in the culture medium. Thus, the isolate has a potential to be used for lower temperature biohydrogen production process.

Kinetics of the decomposition of disilane on a silicon growth surface into two non-identical radicals

Kinetic theory is used to treat the characteristics of the decomposition of the disilane molecule into two non-identical radicals in a wide range of growth temperatures and at low gas pressure in the reactor. The conditions for determining surface concentration are established and the possibility of the existence of an unambiguous relationship between the rates of decomposition $${v_{SI{H_3}}}$$ and $${v_{SI{H_4}}}$$ various fragments of the molecule is demonstrated. A strong dependence of the rate of decomposition of the molecules of the working gas on its pressure was revealed, which suggests that the film growth rate is mainly dependent on the rate and mode of the pyrolysis process on the surface of the growing layer. It is shown that a model of disilane decomposition into two non-identical fragments with the concurrent transfer of all the hydrogen atoms of the molecule onto the silicon growth surface is most preferrable for an adequate description of the pyrolysis process at temperatures within 400–800°C. Non-physical features of the temperature dependences of the kinetic coefficients appearing in the model of decomposition of disilane into two identical radicals is completely eliminated if the hydrogen atoms are transferred onto the growth surface at the chemisorption stage.

Interface morphology and composition of Ga(NAsP) quantum well structures for monolithically integrated LASERs on silicon substrates

Highly efficient light sources are the remaining item required for the realization of optoelectronically integrated circuits on exactly oriented Si(0 0 1).Here, we present—using transmission electron microscopy—an investigation on the structure and stability of Ga(NAsP), which is a direct bandgap semiconductor. It is shown that Ga(NAsP) can be grown on Si(0 0 1) substrates at a wide range of growth temperatures. No sign of defect formation and phase separation is observed even for the highest growth temperatures used. The interfaces of the quaternary alloys with the GaP barriers roughen significantly with increasing growth temperature. On the contrary, the material deposited at high temperatures is more homogeneous than the one deposited at low temperatures. This is highly surprising as dilute nitride III/V alloys are commonly thought to be metastable. This is resolved by density functional theory calculations, which show that Ga(NAsP) becomes significantly more stable when grown on substrates which have a smaller lattice constant than the equilibrium lattice constant of the alloy. This stability together with the strong room-temperature photoluminescence shown by all samples, make the Ga(NAsP) material system highly promising for laser applications on Si substrates.