Wide Gap Semiconductor Research Articles

Recent Progress in Direct X-Ray Detectors Based on Metal Oxide Wide Bandgap Semiconductors: A Review

Recent Progress in Direct X-Ray Detectors Based on Metal Oxide Wide Bandgap Semiconductors: A Review

(Ultra)wide bandgap semiconductor heterostructures for electronics cooling

The evolution of power and radiofrequency electronics enters a new era with (ultra)wide bandgap semiconductors such as GaN, SiC, and β-Ga2O3, driving significant advancements across various technologies. The elevated breakdown voltage and minimal on-resistance result in size-compact and energy-efficient devices. However, effective thermal management poses a critical challenge, particularly when pushing devices to operate at their electronic limits for maximum output power. To address these thermal hurdles, comprehensive studies into thermal conduction within semiconductor heterostructures are essential. This review offers a comprehensive overview of recent progress in (ultra)wide bandgap semiconductor heterostructures dedicated to electronics cooling and are structured into four sections. Part 1 summarizes the material growth and thermal properties of (ultra)wide bandgap semiconductor heterostructures. Part 2 discusses heterogeneous integration techniques and thermal boundary conductance (TBC) of the bonded interfaces. Part 3 focuses on the research of TBC, including the progress in thermal characterization, experimental and theoretical enhancement, and the fundamental understanding of TBC. Parts 4 shifts the focus to electronic devices, presenting research on the cooling effects of these heterostructures through simulations and experiments. Finally, this review also identifies objectives, challenges, and potential avenues for future research. It aims to drive progress in electronics cooling through novel materials development, innovative integration techniques, new device designs, and advanced thermal characterization. Addressing these challenges and fostering continued progress hold the promise of realizing high-performance, high output power, and highly reliable electronics operating at the electronic limits.

Effects of High-Temperature Treatments in Inert Atmosphere on 4H-SiC Substrates and Epitaxial Layers

Silicon carbide is a wide-bandgap semiconductor useful in a new class of power devices in the emerging area of high-temperature and high-voltage electronics. The diffusion of SiC devices is strictly related to the growth of high-quality substrates and epitaxial layers involving high-temperature treatment processing. In this work, we studied the thermal stability of substrates of 4H-SiC in an inert atmosphere in the range 1600–2000 °C. Micro-Raman spectroscopy characterization revealed that the thermal treatments induced inhomogeneity in the wafer surface related to a graphitization process starting from 1650 °C. It was also found that the graphitization influences the epitaxial layer successively grown on the wafer substrate, and in particular, by time-resolved photoluminescence spectroscopy it was found that graphitization-induced defectiveness is responsible for the reduction of the carrier recombination lifetime.

Bilayer Boost to UV Assisted Supercapacitors: Enhanced Performance with Transparent TiO2/MoO3 Heterojunction Electrode

AbstractPhoto‐assisted supercapacitor is a promising smart device component for achieving both energy conversion and storage. The photo‐assisted functionality in a supercapacitor is realized through the choice of photo responsive electrode material under suitable illumination conditions. The well‐known electrochemically active electrode materials are wide band gap semiconductors which absorb strongly in UV light. However, most of the prior studies on photo‐assisted supercapacitors used visible light. Herein, we present a transparent TiO2/MoO3 bi‐layer heterojunction made by simple solution process as an efficient electrode for photo‐assisted supercapacitors under UV light illumination. The electrochemical performance of the electrode is significantly enhanced even with a less intense (0.05 mW/cm2) UV light, compared to dark as well as the single layer electrode under same illumination condition. The highest areal capacitance of 63.25 mF/cm2 at 0.1 mA/cm2 is achieved, that surpasses most of the recent relevant reports. The synergetic effect of UV illumination and the built‐in potential at the type II heterojunction interface encourages ion insertion and better collection of the photo‐generated carriers. The unique bi‐layer design also leads to better rate capability features. Thus, the work presents a new prospect for the development of transparent energy storage devices to be used in future smart technologies.

Two-dimensional boron nitride allotrope Irida-B12N12 with 3-6-8 membered rings and wide-bandgap semiconducting properties

We present a novel two-dimensional (2D) boron nitride allotrope, Irida-B12\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\\hbox {B}_{{12}}$$\\end{document}N12\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\\hbox {N}_{{12}}$$\\end{document} (Ir-BN), analogous to the all-carbon Irida-Graphene (Ir-G). The predicted structure of Ir-BN consists of alternating boron and nitrogen atoms, forming three distinct lattices with 3-, 6-, and 8-membered ring patterns. First-principles calculations based on density functional theory (DFT) formalism and ab initio molecular dynamics (AIMD) simulations were performed to investigate its structural, mechanical, electronic, and optical properties. The Ir-BN lattices exhibit good dynamical and thermal stability, supporting their viability as new 2D materials. Substantial anisotropy is observed in the mechanical properties, with in-plane stiffness ranging from 16 to 142 N/m, depending on the direction, and bulk moduli between 78 and 95 N/m. The electronic structure analysis reveals that Ir-BN is a wide-bandgap semiconductor, with band gaps ranging from 2.4 to 3.2 eV. The material shows optical activity particularly in the visible and ultraviolet regions.

Strain-induced bandgap engineering in 2D ψ-graphene materials: a first-principles study.

High mechanical strength, excellent thermal and electrical conductivity, and tunable properties make two-dimensional (2D) materials attractive for various applications. However, the metallic nature of these materials restricts their applications in specific domains. Strain engineering is a versatile technique to tailor the distribution of energy levels, including bandgap opening between the energy bands. ψ-Graphene is a newly predicted 2D nanosheet of carbon atoms arranged in 5,6,7-membered rings. The half and fully hydrogenated (hydrogen-functionalized) forms of ψ-graphene are called ψ-graphone and ψ-graphane. Like ψ-graphene, ψ-graphone has a zero bandgap, but ψ-graphane is a wide-bandgap semiconductor. In this study, we have applied in-plane and out-of-plane biaxial strain on pristine and hydrogenated ψ-graphene. We have obtained a bandgap opening (200 meV) in ψ-graphene at 14% in-plane strain, while ψ-graphone loses its zero-bandgap nature at very low values of applied strain (both +1% and -1%). In contrast, fully hydrogenated ψ-graphene remains unchanged under the influence of mechanical strain, preserving its initial characteristic of having a direct bandgap. This behavior offers opportunities for these materials in various vital applications in photodetectors, solar cells, LEDs, pressure and strain sensors, energy storage, and quantum computing. The mechanical strain tolerance of pristine and fully hydrogenated ψ-graphene is observed to be -17% to +17%, while for ψ-graphone, it lies within the strain span of -16% to +16%.

Strongly enhanced shift current at exciton resonances in a noncentrosymmetric wide-gap semiconductor

Excitons are fundamental quasiparticles that are ubiquitous in photoexcited semiconductors and insulators. Despite causing a sharp and strong photoabsorption near the interband absorption edge, charge-neutral excitons do not yield photocurrent in conventional photovoltaic processes unless dissociated into free charge carriers. Here, we experimentally demonstrate that excitons can directly contribute to photocurrent generation through a nonlinear light−matter interaction in a noncentrosymmetric semiconductor CuI. Epitaxial thin films of CuI exhibit a substantial enhancement of photocurrent at exciton resonance energies even below the bandgap. From the light polarization dependence, this photocurrent is identified to be shift current, a nonlinear photocurrent driven by the change in the geometric Berry phase of electron wave functions upon the optical transition. The shift current at the exciton resonance is much larger than that induced above the band gap by free electron−hole excitation, and their signs are opposite. First-principles calculations elucidate that the sign and magnitude of the exciton shift current are strongly dependent on the strain in the thin film. The present study reveals the crucial role of excitons in enhancing the shift current magnitude and its strain sensitivity, and will open an unprecedented route for efficient manipulation of nonlinear optical effects.

Photoluminescence and Raman spectroscopy of wide bandgap semiconductors damaged by deep-UV laser irradiation

The effects of a pulsed, focused, deep-UV (4.66 eV) laser on wide and ultra-wide bandgap semiconductors were investigated with photoluminescence (PL) and Raman spectroscopy. Three semiconductor single crystals were studied: silicon carbide (6H-SiC), gallium nitride (GaN), and gallium oxide (β-Ga2O3). Atomic emission lines from neutral Ga or Si were observed during the laser-damage process. For all three semiconductors, PL mapping (3.49 eV laser excitation) of the damaged material revealed visible emission bands in the 2.6–2.8 eV range, attributed to point defects. Raman spectra (2.33 eV excitation) showed a reduction in the Raman peak intensities in the damaged region, along with weak PL bands around 1.9–2.1 eV.

High-Performance Self-Powered Dual-Mode Ultraviolet Photodetector Based on (PEA)2PbI4/GaN Heterojunction.

Wide-bandgap semiconductors like GaN, known for their superior photoresponse and detection capabilities in the ultraviolet range, represent a foundational component in the design of advanced photodetectors, where the integration of materials with distinct spectral sensitivities into heterojunctions is pivotal for next-generation device innovation. A high-performance self-powered dual-mode ultraviolet photodetector based on a (PEA)2PbI4/GaN heterojunction was fabricated via spin coating. The device exhibits outstanding UV sensitivity under both positive and negative bias, achieving a responsivity of 1.39 A/W and a detectivity of 8.71 × 1010 Jones under 365 nm UV illumination. The built-in electric field at the heterojunction interface enables self-powered operation, achieving a rapid rise time of 46.9 ms and a decay time of 55.9 ms. These findings offer valuable insights into the development and application of perovskite and wide-bandgap semiconductor heterojunctions in optoelectronic devices.

Fabrication of uniform, periodic arrays of exotic AlN nanoholes by combining dry etching and hot selective wet etching, accessing geometries unrealisable from wet etching of planar AlN

Aluminium nitride (AlN) is a wide bandgap semiconductor with far reaching realised and potential applications in electronics and optoelectronic technology. For example, gallium nitride (GaN) quantum dots (QDs) housed within an AlN matrix are attractive due to the large bandgap offsets. However, making suitable AlN sites to house GaN QDs is challenging due to the difficulty in fashioning 3D AlN structures. This results from AlN's strong bonds that are difficult to chemically etch.Whilst dry etching of AlN nanostructures has been explored, wet etching at the nanoscale has been limited by the common exposed facet of AlN being etch-resistant. Hence, wet etching of AlN to create uniform arrays of periodic nanohole nanostructures has, thus far, not been heavily explored.In this paper, an initial dry etching of a 2D AlN planar template is used to expose alternative wet-etchable facets so that periodic arrays of nanohole structures are revealed by wet-etching. Both a study of different initial dry etched structures, including tapered nanoholes, and wet etching time were performed. A model to describe the dynamics of wet etching on the different dry etched nanohole structures is proposed. Periodic arrays of uniform nanohole features are realised that hold promise for applications such as the housing of site-controlled quantum dots.

Si/Graphene exotic type IMPATT (p+-n-n+-) Opto-sensor: First experimental observation

On-chip DC characterization study has been performed on exotic-type Si/Graphene Avalanche Transit Time (ATT) device for ultra-fast optical-sensing. The performance of the newly proposed device has further been compared with conventional narrow and wide band gap semiconductor based p+-n-n+ devices. It has been observed that at X-band frequencies, the new class of device outperforms Si/SiC/GaN and their heterostructure counterparts, in terms of better RF power density (∼1W and 8.1W), RF conversion efficiency (6 % and 18 %) and much better quantum efficiency (93 % and 91.5 %), respectively for device active-region-widths of 15 μm and 25 μm. Standard Chemical Vapor Deposition (CVD) route has been followed to fabricate the new class of device. Further, the authors have studied the applicability of the newly developed devices for optical-sensing. This comprehensive study reveals that the Device Under Test (DUT) exhibits photo responsivity at least 10 times better than its counter parts. Thus, the study will be useful for future applications in single-photon-detection for defence and civil sectors.

Scanning electron microscopy imaging of multilayer-doped GaN: Effects of surface band bending, surface roughness, and contamination layers on doping contrast

Dopant profiling by a scanning electron microscope possesses great potential in the semiconductor industry due to its rapid, contactless, non-destructive, low cost, high spatial resolution, and high accuracy characteristics. Here, the influence of plasma and wet chemical treatments on doping contrast was investigated for a multilayered p-n GaN specimen, which is one of the most promising third-generation wide bandgap semiconductors. Angle-resolved x-ray photoelectron spectroscopy and atomic force microscope were employed to characterize the degree of surface band bending, surface roughness, gallium oxides, and hydrocarbons on the surface of GaN. N2 and air plasmas were unable to remove the surface contamination layers, although the degree of surface band bending was suppressed. In contrast, wet chemical methods offer superior capability in removing contamination layers; however, the surface roughness was increased to varying degrees. Notably, NH4F solution is capable of improving the doping contrast. The underlying mechanism was elucidated from the perspective of surface band bending, surface roughness, and contamination. The findings reported here will provide a feasible solution for effective characterization of semiconductor materials and devices.

MHz High Performance of Soft Magnetic Composite with Ordered Domain Structure for Efficient Conversion of Electrical Energy

AbstractSoft magnetic materials are a core element of power electronics and electrical machines. However, none of the soft magnetic materials is able to exploit the full potential of wide bandgap semiconductors, which operate above MHz frequency for efficient energy conversion in power electronic systems. Here, a high‐performance Fe–Si soft magnetic composites with a 2D ordered domain structure are reported, enabling efficient energy conversion at MHz frequencies. By transforming spherical particles into flakes and arranging them in layers, 2D magnetic domains are created within the composite. This leads to a 90% increase in permeability and a tenfold decrease in loss at 3 MHz compared to composite made with spherical particles. The significantly increased cut‐off frequency indicates that the ordered flaky particles are suitable for MHz applications, unlike the disordered spherical particles. These findings provide an effective approach for fabricating high performance soft magnetic composites from traditional spherical particles and miniaturizing magnetic devices for efficient power electronics operation.

Exploring the Crystal Structure and Electronic Properties of γ-Al2O3: Machine Learning Drives Future Material Innovations.

For decades, researchers have struggled to determine the precise crystal structure of γ-Al2O3 due to its atomic-level disorder and the challenges associated with obtaining high-purity, high-crystallinity γ-Al2O3 in laboratory settings. This study investigates the crystal structure and electronic properties of γ-Al2O3 coatings under the influence of an external electric field, integrating machine learning with density functional theory (DFT). A potential 160-atom supercell structure was identified from over 600,000 γ-Al2O3 configurations and confirmed through high-resolution transmission electron microscopy and selected area electron diffraction. The findings indicate that γ-Al2O3 deviates from the conventional spinel structure, suggesting that octahedral vacancies can reduce the system's energy. Under an external electric field, the material's band structure and density of states (DOS) undergo significant changes: the bandgap narrows from 3.996 to 0 eV, resulting in metallic behavior, while the projected density of states (PDOS) exhibits peak broadening and splitting of oxygen atom PDOS below the Fermi level. These alterations elucidate the variations in the electrical conductivity of alumina coatings under an electric field. These findings clarify the mechanisms of γ-Al2O3's electronic property modulation and offer insights into its covalent and ionic mixed bonding as a wide-bandgap semiconductor. This discovery is essential for understanding dielectric breakdown in insulating materials.

Exploration of novel boron nitride polymorphs: High-throughput screening combined with multi-task orbital crystal graph convolutional neural network (MT-OCGCN)

In response to the limitations of traditional material property prediction methods, we have developed a Multi-task Orbital Crystal Graph Convolutional Neural Network (MT-OCGCN). This innovative model allows for sharing parameters and computational resources, significantly improving prediction efficiency and accuracy. Experimental comparisons show that the model can achieve multi-task prediction with high accuracy for both strong and weak correlation properties, this offers an efficient approach for computational materials screening and design. Combined with high-throughput screening has resulted in the discovery of 13 new boron nitride polymorphs in the P21/c phase, among which 7 are characterized as wide direct band gap semiconductors. Furthermore, we have comprehensively analyzed the mechanical, thermal, and electronic properties of these new boron nitride polymorphs. It can be asserted that MT-OCGCN has the capability to precisely forecast the physical properties of novel structures that are absent from current databases.

Coupling of tribovoltaic effect and tribo-electrostatic effect at dynamic semiconductor heterojunction interfaces

Tribovoltaic effect at the dynamic semiconductor interface is of great fundamental and practical importance for developing a variety of functional devices; yet, it can be coupled with a series of different physical effects, such as the contact-electrification induced electrostatic effect and mechanical wearing effect, and the coupling mechanisms are still remained to be elucidated. Herein, we investigated the coupling between tribovoltaic and tribo-electrostatic effects at the dynamic heterojunctions of two wide-bandgap semiconductors: zinc oxide (ZnO) and gallium nitride (GaN). It is found that, in the contact-separation mode, the direct-current outputs from tribovoltaic effect can be clearly distinguished from the alternating-current outputs from tribo-electrostatic effect. Then, humidity, external load resistance and pressure force are found to reveal the coupling characteristics of these two effects, that tribovoltaic outputs are less affected by humidity, show smaller matched impedance and are more sensitive to high pressure force, diverging from the tribo-electrostatic outputs. Lastly, we demonstrate that the mechanical wearing effect can be inhibited in contact-separation mode, achieving long-term stability over 50,000 cycles. Therefore, this work provides insights to the mechanism of tribovoltaic effects and practical guidance for high-performances tribovoltaic devices.

Thermal Conversion of Ultrathin Nickel Hydroxide for Wide Band Gap 2D Nickel Oxides.

Wide band gap (WBG) semiconductors (E g > 2.0 eV) are integral to the advancement of next-generation electronics, optoelectronics, and power industries owing to their capability for high-temperature operation, high breakdown voltage, and efficient light emission. Enhanced power efficiency and functional performance can be attained through miniaturization, specifically via the integration of device fabrication into a two-dimensional (2D) structure enabled by WBG 2D semiconductors. However, as an essential subgroup of WBG semiconductors, 2D transition metal oxides (TMOs) remain largely underexplored in terms of physical properties and applications in 2D optoelectronic devices, primarily due to the scarcity of sufficiently large 2D crystals. Thus, our goal is to develop synthesis pathways for 2D TMOs possessing large crystal domains (e.g., >10 μm), expanding the 2D TMO family and providing insights for future engineering of 2D TMOs. Here, we demonstrate the synthesis of WBG 2D nickel oxide (NiO) (E g > 2.7 eV) thermally converted from 2D nickel hydroxide (Ni(OH)2) with a lateral domain size larger than 10 μm. Moreover, the conversion process is investigated using various microscopic techniques, such as atomic force microscopy, Raman spectroscopy, transmission electron microscopy, and X-ray photoelectron spectroscopy, providing significant insights into morphology and structural variations under different oxidative conditions. The electronic structure of the converted Ni x O y is further investigated using multiple soft X-ray spectroscopies, such as X-ray absorption and emission spectroscopies.

Hydrothermal Growth Zinc Oxide Nanorods for pH Sensor Application

The aim of this work is to apply synthesized zinc oxide (ZnO) Nanorods using hydrothermal (HTL) growth technique for pH sensor application. The highly crystallite of ZnO Nanorods was obtained by anneal the growth ZnO Nanorods in furnace at 200 °C for 2 hours. Besides that, XRD analysis shows the produced ZnO Nanorods belonged to the (002) plane. Furthermore, Scanning Electron Microscope (SEM) images confirm that the ZnO Nanorods with hexagonal-faceted structural were successfully produced by HTL growth technique. In addition, Ultraviolet–visible (UV-Vis) spectrophotometer analysis shows that the synthesized ZnO belongs to the wide band gap semiconductor material. The growing ZnO Nanorods were then subjected to electrical measurement with various pH levels. The outcome demonstrates that the current rises as the solution changes from acidic to alkaline. Overall, our study shows a relationship between the electrical as well as the structural characteristics of ZnO Nanorods at various pH levels.

Toward crack-free AlN growth on silicon (111) by introducing boron incorporated buffer layer via MOCVD

High-quality aluminum nitride (AlN) films on silicon substrates are crucial for various applications due to their inherent properties as wide-bandgap semiconductors, cost-effectiveness, and compatibility with silicon-based circuits. Nonetheless, producing high-quality and crack-free AlN on silicon presents significant challenges due to the stress caused by lattice and thermal expansion mismatches. This study introduces a method to mitigate these challenges by incorporating a boron precursor during the metalorganic chemical vapor deposition process to form a BAlN buffer layer. Analytical techniques, such as secondary ion mass spectrometry, atomic force microscopy imaging, XRD rocking curves, reciprocal space map, and Raman spectroscopy, indicate that the BAlN buffer layer promotes the enlargement of seed crystal size, which effectively delays AlN coalescence, mitigates accumulated tensile stress, and enhances the overall crystal quality. Employing this technique has produced a 520 nm thick, crack-free AlN film on silicon (111) with high crystal quality, achieving full width at half maximum values of only 0.2° and 0.3° for XRC (002) and (102), respectively.

GaN-on-sapphire JTE-anode lateral field-effect rectifier for improved breakdown voltage (>2.5 kV) and dynamic RON

In high-power switching applications such as electric grids, transportation, and industrial electronics, power devices are supposed to have kilo-voltage (kV) level blocking capability. In this work, 1200-V gallium nitride (GaN) lateral field-effect rectifiers (LFERs) are demonstrated. The GaN-on-sapphire epitaxial structure is adopted to prevent vertical breakdown. To address electric field crowding, a p-GaN/AlGaN/GaN junction termination extension (JTE) is embedded in the anode region of the LFER. Comparing to the conventional LFER (Conv-LFER) fabricated on the same wafer, the JTE-anode LFER (JTE-LFER) achieves an improved breakdown voltage (>2.5 kV) and a lower dynamic ON-resistance (RON). The proposed p-GaN/AlGaN/GaN JTE offers a semiconductor-based solution (contrasted to the dielectric-based solution, i.e., field plate) to mitigate the high electric field, which is highly desirable for wide bandgap semiconductor power devices as it enhances the dielectric reliability.