Design Of Wideband Low Noise Amplifier Research Articles

Wideband Low Noise Amplifier Design at L band for Satellite Receiver

Wideband Low Noise Amplifier Design at L band for Satellite Receiver

Design of Wideband LNA Employing Cascaded Complimentary Common Gate and Common Source Stages

A wideband low noise amplifier (LNA) is presented, which composes of cascaded complimentary common gate (CCG) stage and common source (CS) stages. Based on the current reusing technique, the CCG stage saves dc power and reduces chip area by replacing two inductors with one transformer. The source-degenerated CS stage helps form a frequency-dependent load for the CCG stage. With a load reusing technique, this load can be transformed to the input and helps achieve simultaneous wideband gain, wideband input matching, and flat noise figure (NF) over the desired band. The proposed LNA shows the measured 3-dB bandwidth from 7.6 to 29 GHz, the maximum power gain of 10.7 dB, and the NF from 4.5 to 5.6 dB. The power consumption is 12.1 mW with 1-V supply voltage and the chip occupies an area of 0.3 mm2 in Taiwan Semiconductor Manufacturing Company (TSMC) 65-nm CMOS process.

A Study on Scalability and Variation of CMOS Low Noise Amplifier in Advance CMOS Technology Processes

Recent technology requires multistandard Radio Frequency (RF) chips for multipurpose wireless applications. In RF circuits, a low-noise amplifier (LNA) plays the key role in determining the receiver’s performance. With CMOS technology scaling, various designs has been adopted to study circuit’s characteristic and variation. In this paper, we present the results of scalable wideband LNA design based on complementary metal oxide semiconductor (CMOS), with its variance study. The design was fabricated in 180nm, 90nm, 65nm and 40nm CMOS technology.

0.6–3-GHz Wideband Receiver RF Front-End With a Feedforward Noise and Distortion Cancellation Resistive-Feedback LNA

A novel wideband receiver RF front-end, including a resistive negative feedback wideband low-noise amplifier (LNA) with feedforward noise and distortion cancellation and a current commutating down conversion passive mixer with biquad trans-impedance amplifier, is presented in this paper. In comparison to conventional resistive negative feedback LNAs, theory analysis and experimental results for the proposed LNA circuit shows improved performance parameters, including voltage gain, noise figure (NF), and input-referred third-order intercept point (IIP3), especially helpful for wideband LNA design in modern deep-submicrometer CMOS. A wideband receiver RF front-end fabricated in 0.13-μm CMOS, based on the proposed feedforward noise and distortion-cancellation resistive-feedback LNA, has 42-48-dB conversion gain with 0.8-12-MHz tunable IF -3-dB bandwidth and 12-dB adjacent channel selectivity at 2 <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">f</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">p</sub> , -14-dBm IIP3, and 3-dB NF double-sideband with 10-kHz flicker-noise corner frequency.

An 8-20-GHz wide-band LNA design and the analysis of its input matching mechanism

A wide-band low-noise amplifier (LNA) design is presented with -10 dB input reflection coefficient and 100-K noise temperature over the 8-20-GHz frequency range at room temperature. This LNA can be cooled down in a liquid helium cryostat to have 10-K noise temperature for the purpose of radio-astronomy application. To achieve its wide-band characteristics, a novel input matching mechanism is proposed, which combines the high-frequency inductive feedback and the low-frequency capacitive feedback. The recognition and comprehensive interpretation of this new input matching mechanism is crucial for future development of ultra-wide-band LNAs.