Welding Of Nanowires Research Articles

Controlled Assembly of Nanowires into Welded Nanowire Networks for Memristor Device Fabrication

Next-generation electronic devices are essential for neuromorphic computing (or brain-inspired computing), which is essential for the high-speed processing of big data using artificial intelligence tools.(1) Memristors, an important constituent of these next-generation electronic devices, have been fabricated using many forms of metal oxides, including nanowires. Nanowires forms of oxides, although reduce the complexity of the memristive device fabrication process, need many technological advances for their widespread use in memristor fabrication.(1) For instance, the cyclability of devices needs to be improved. Furthermore, realizing the high density of nanowire-based memristor devices requires methods for addressing individual nanowires in large assemblies (i.e., arrays) of nanowires, strategies for which also need to be developed.(1) A possible avenue to address these problems is through the use of nanowire networks,(1) specifically those that have nanowires welded together via bridges that have the same chemical composition as those of the nanowires themselves.(2) In this configuration, the resistive switching of both the nanowires and the randomly-formed junctions between the nanowires can be employed to make mesoscale devices, circumventing the need to individually address each nanowire in the nanowire assemblies.(1) Realizing memristive devices based on welded nanowire networks, therefore, requires a strategy for assembly via welding of pre-synthesized nanowires into networks that offer the ability to control the chemical compositions of the interfaces between the nanowires and the densities of nanowires within the assemblies.(2, 3) In the presentation, strategies developed by our group for the assembly of semiconductor nanowires into welded nanowire networks of controlled densities will be discussed in detail. Specific devices that will be discussed include assembly via welding of Mg2Si, TiO2 and TiC nanowires.(2, 3) The assembly via welding of nanowires into networks is expected to accelerate the testing of mesoscale memristive devices, irrespective of the method employed for the synthesis of the nanowires used in the assemblies. This is expected to aid in accelerating both the science and technology needed for the deployment of memristive devices.

Flexible welding of SiOx nanowire to macroporous carbon film and underlying new insights

With the continuous decreasing in sizes of functional materials and devices, people are being asked to perform a flexible, accurate, in-situ and non-thermal welding of nanowires at the nanoscale. In this work, a well deliberated procedure including three typical stages: sharpening, hooking and welding, was carried out in sequence by in-situ TEM to realize the high demand welding of SiOx nanowire to macroporous carbon film. It was found that the brittle SiOx nanowire was non-thermally softened under energetic e-beam irradiation, and the flexibility and accuracy of welding could be achieved by adjusting the beam spot size, irradiation location and irradiation time. It was demonstrated that the nanocurvature effect of SiOx nanowire and the ultra-fast energy deposition effect induced by energetic e-beam irradiation dominated the diffusion, evaporation and plastic flow of atoms and the resulting nanowire re-shaping and nanowelding processes. In contrast, the traditional knock-on mechanism and e-beam heating effect are inadequate to explain these phenomena. Therefore, such a study is crucial not only to the flexible technical controlling but also to the profound fundamental understanding of energetic e-beam-induced nanowire re-shaping and nanowelding.

Highly stable silver nanowire-based transparent conductive electrodes for electrochromic devices

Silver nanowire (AgNW)-based transparent conductive electrode (AgNW/PET) is one of the critical components in flexible optoelectronic devices. However, prolonged usage of AgNW/PETs is restrained due to their inadequate environmental stabilities. In this study, we employed a novel approach to improve the stability and conductivity of AgNWs by applying benzotriazole (BTA) and cesium-incorporated titanium dioxide (TiO2:Cs) particles onto AgNW/PET (AgNW/BTA /TiO2:Cs/PET), which formed an inhibitive complex Ag(I)–BTA and welding of nanowires through local melting at the junctions. It unveiled exemplary optoelectrical properties with a sheet resistance of 24.8 Ω/sq and transmittance of 92.9 %. Furthermore, AgNW/BTA/TiO2:Cs/PET exhibited stable electrical performances compared to the reference sample under different environmental conditions, such as in a hot-humid environment, under exposures to different lights and acidic medium. In addition, electrochromic devices fabricated using AgNW/BTA/TiO2:Cs/PET demonstrated stable electrochromic performance over 1000 cycles. Altogether the results of this study confirm that the addition of BTA and TiO2:Cs could serve as an efficient route to improve the stability and conductivity of AgNW films.

(Invited) Welding of Nickel Nanowires By Ions Beam Irradiation: From Small to Large Scale

In order to replace conventional transparent conducting electrodes, metal nanowires (MNWs) networks have long been act as promising contenders due to their high mechanical flexibility. However, nanowire-nanowire contact resistance is main technical obstruction in terms of improvement in their performance. To reduce nanowire-nanowire contact resistance, welding of nanowires (NWs) is essential. In this work, MeV proton and argon ions beam irradiation induced nanoscale welding technique to fabricate X-, Y-, II- and T-shaped molecular junctions between nickel nanowires (Ni-NWs) is presented. Ni-NWs are irradiated by 2.75 MeV proton ions and 3.5 MeV argon ions at doses 1x1016ions/cm2 and 5x1015 respectively while temperature is kept constant. Transmission electron microscopy (TEM), scanning electron microscopy (SEM) and x-ray diffraction (XRD) results reveal that Ni-NWs are welded without losing stability in crystal structures of NWs. Afterward, a two-dimensional large scale random network of Ni-NWs is fabricated by 3 MeV proton ions beam irradiation induced nanoscale welding of Ni-NWs at crossing positions. Proton ion beam induced large scale network fabrication is confirmed by TEM and SEM techniques. Moreover, these networks are characterized optically using UV-VIS spectroscopy. It is observed that at a beam fluence of 5x1015 ions/cm2, perfect molecular junctions between Ni-NWs in X-, II-, and V-shapes are achieved and a large scale welded network of Ni-NWs is obtained without distorting the morphology of NWs. Moreover, structure of Ni-NWs remains stable under 3MeV proton ions beam irradiation and networks are found to be optically transparent. The results exhibit that fabrication of Ni-NWs network precede through three steps: i- High energy ions beam irradiation induced heat spikes lead to locally heat and fuse Ni-NWs, ii- Formation of molecular junctions on small scale, iii- Formation of large scale network Ions beam irradiation induced welding of Ni-NWs can improve performance of NWs networks by reducing contact resistance between NWs for application as transparent conducting electrodes. These high quality welded MNWs networks may potentially be applied as transparent conducting electrodes in optoelectronic devices.

Nanoscale Manipulation, Heating, and Welding of Nanowires

S. LeBlanc1, B. Swartzentruber3, J. Martinez3, G. Christoforo2, T. Kodama1, K.E. Goodson1 1Mechanical Engineering Department, 2Electrical Engineering Department, Stanford University 3Center for Integrated Nanotechnologies, Sandia National Laboratories Figure 1. Probes are used to lift nanowire off metal grid and pass current through the wire. Contact resistance between probe and nanowire leads to local melting resulting in solder-like balls.