Waveguide Laser Research Articles

A low quantum defect and power scalable Yb-doped glass waveguide laser

We present a continuous wave laser action in ytterbium (Yb)-doped phosphate glass buried channel waveguides. The 25 mm long waveguides were fabricated by the standard ion exchange method. When pumped with a 976 nm laser diode, the waveguide laser emits at 982.4 nm, yielding an ultralow quantum defect of 0.66 %. The impact of coupling and pump power variation on the laser emission wavelengths is demonstrated. Furthermore, the results of pulsing using a monolayer graphene as a saturable absorber (SA) are presented and a pulse train with a repetition rate of 1 MHz and a pulse width of 700 ns was obtained.

Near infrared diode-pumped lasing of femtosecond-laser-written Pr:LiLuF4 waveguide

In this Letter we report the near infrared operation of a femtosecond-laser-written diode-pumped Pr:LiLuF4 waveguide laser. By employing a circular depressed-cladding waveguide with propagation losses as low as 0.19dB/cm, we demonstrated lasing at 914 nm, with a maximum output power of 140mW and a slope efficiency of 24%. Moreover, we demonstrated the possibility of lasing in a waveguide device at 894 nm, 922 nm and 933 nm. To the authors knowledge, this is the first demonstration of a Pr-based waveguide laser operating in this spectral region.

Integrated thermo-optic phase shifters for laser-written photonic circuits operating at cryogenic temperatures

Abstract Integrated photonics offers compact and stable manipulation of optical signals in miniaturized chips, with the possibility of changing dynamically their functionality by means of integrated phase shifters. Cryogenic operation of these devices is becoming essential for advancing photonic quantum technologies, accommodating components like quantum light sources, single photon detectors and quantum memories operating at liquid helium temperatures. In this work, we report on a programmable glass photonic integrated circuit (PIC) fabricated through femtosecond laser waveguide writing (FLW) and controlled by thermo-optic phase shifters both in a room-temperature and in a cryogenic setting. By taking advantage of a femtosecond laser microstructuring process, we achieved reliable PIC operation with minimal power consumption and confined temperature gradients in both conditions. This advancement marks the first cryogenically-compatible programmable FLW PIC, paving the way for fully integrated quantum architectures realized on a laser-written photonic chip.

Dissipative spatiotemporal soliton in a driven waveguide laser

A distributed Kerr-lens mode locking regime can be realized in a waveguide laser by spatial profiling of the pump beam, thus creating a spatio-temporal soliton. Additional slow temporal modulation of the pump source stabilizes the spatio-temporal solution in a broad range of parameters defined by the dynamic gain saturation. We choose a Cr:ZnS waveguide laser as a practical example, but such a regime is feasible in various waveguide and fiber oscillators. A far-reaching analogy with Bose–Einstein condensates allows this approach to stabilize the weakly dissipative BECs.

Developments of Waveguide Lasers by Femtosecond Laser Direct–Writing Technology

Waveguide lasers have the advantages of miniature and compact structure and have broad application prospects in photonic integration and on–chip laboratories. The development of femtosecond laser direct–writing technology makes the processing of transparent materials more flexible and controllable. This paper mainly introduces a waveguide laser based on femtosecond laser direct–writing technology. Firstly, the applications of femtosecond laser direct–writing technology in an optical waveguide are introduced, including the principles of femtosecond laser direct–writing technology, common optical wave scanning methods, and types of optical waveguides. After that, we summarize the development of a waveguide continuous–wave laser, a Q–switched laser and a mode–locked laser from visible to mid–infrared wavebands and analyze some new representative work. Finally, we explain the difficulty of compensating for dispersion in pulse waveguide lasers and summarize some new ideas that have been proposed to solve the problem.

Er:LiYF4 planar waveguide laser at 2.8 μm

We report on a mid-infrared erbium planar waveguide laser operating on the 4I11/2 → 4I13/2 transition. It employs a heavily doped 10.6 at. % Er3+:LiYF4 single-crystalline layer grown by liquid-phase epitaxy. The waveguide laser delivers a maximum output power of 191 mW at ∼2809 nm with a slope efficiency of 15%, a linear polarization, and a laser threshold of 134 mW. The waveguide propagation losses are 0.4 ± 0.2 dB/cm. The polarized spectroscopic properties of the Er3+:LiYF4 layers are also investigated. The stimulated-emission cross section of Er3+ ions amounts to 0.87 × 10−20 cm2 at 2809 nm for π-polarization. Er3+:LiYF4 epitaxial layers represent a promising platform for integrated low-loss mid-infrared light sources.

Continuous wave operation of broad area and ridge waveguide laser diodes at 626 nm

AbstractThe authors present continuous wave (CW) high‐power broad area and ridge waveguide lasers with laser emission at 626 nm at room temperature. For this, the authors employ GaAs‐based diode lasers in the AlGaInP system for laser emission at 626 nm at room temperature. The laser structure is grown on three‐inch wafers by metal organic vapour phase epitaxy. Broad area and ridge waveguide lasers are fabricated. Pulsed broad area laser characterisation on bar level shows laser operation at 20 C heat sink temperature. The authors measured peak lasing wavelengths as short as 625 nm and total maximum output power of both facets up to 1.4 W at an injection current of 2 A. Both, broad area and ridge waveguide lasers show laser operation and CW excitation at room temperature. The ridge waveguide lasers emit output powers of over 90 mW at 626 nm at a maximum injection current of 200 mA with a nearly diffraction‐limited beam profile.

Characterization of noise spectra in low-jitter GHz mode-locked fs-laser-inscribed waveguide lasers

We demonstrate low-noise, continuous-wave mode-locking of a diode-pumped Yb:KLuW waveguide laser operating at fundamental repetition rates in the GHz range. Utilizing a femtosecond-laser-inscribed Yb:KLuW channel waveguide laser with a tunable cavity length of a few centimeters, we successfully generate femtosecond pulses near 1030 nm, employing either single-walled carbon nanotubes or semiconductor saturable absorbers. Although timing noise is one of the most critical factors in the implementation of high-repetition-rate laser sources for various applications, investigations into timing noise characteristics in waveguide lasers remain limited. This study fills this gap by presenting timing jitter measurements for GHz mode-locked waveguide lasers with diverse cavity parameters. To quantitatively analyze noise spectral characteristics, including relaxation oscillation processes induced by intensity noise features, we introduce a theoretical modeling approach. The present investigation directly enables the provision of strategies for further suppression of timing jitter and designing high-performance, low-noise mode-locked lasers.

Compact Q-switched vortex waveguide laser modulated by buried Ag nanoparticles in SiO2

Vortex beam, particularly pulsed vortex laser, has expanded the potential applications in optics due to their unique wave-front phase structure and the determined photon orbital angular momentum. In this study, we present a novel approach including the integration of fused silica embedded with silver nanoparticles (Ag:SiO2) into the Nd:YAG waveguide platform for achieving nanosecond vortex pulses. Using a spiral phase plate for in-cavity phase modulation, we successfully demonstrate a Q-switched vortex laser with a high repetition rate in the megahertz range and short pulse width in the nanosecond regime. Additionally, we conduct a comprehensive analysis of the near-field distributions of Ag nanoparticles with varying sizes and distributions using COMSOL simulation. This study exemplifies the integration of silica-based photonic elements for realizing a high-stability and cost-effective nanosecond vortex laser system.

Integrated graphene-based semimetal/metallic-like MSe2 (M = Pt, Re) heterostructures for mid-infrared ultrafast photonics

Mid-infrared (MIR) ultrafast photonics has received significant interest due to the development of compact and robust MIR laser sources capable of emitting wavelengths beyond 2 μm. Transition metal selenides (TMSes), with the properties of feasibly tunable bandgaps, desirable photocarrier transmission property, and broadband nonlinear optical response, have become a research focus on ultrafast photonic applications. However, the relatively large bandgap (around 1 eV) of the TMSes greatly restricts their applications in the MIR region. Here, the synergetic interaction between multilayer graphene (Gr) and semimetal or metallic-like (PtSe2 and ReSe2) is employed to tune the optical properties and to further optimize the optical performance of TMSes in the MIR region. Benefiting from the ultrafast photocarrier relaxation time, appropriate modulation depth, and almost zero non-saturated loss of Gr-PtSe2 and Gr-ReSe2 heterostructures, stable Q-switched laser operation at 1.9 μm has been achieved in an integrated design based on waveguide laser platform. The results demonstrate that combining the semimetal or metallic-like TMSes with van der Waals (vdW) heterostructures is a promising strategy to extend the photonic applications of TMSes into the MIR region, indicating the potential applications of graphene-based TMSes vdW heterostructures for MIR integrated photonics.

Efficient sum-frequency generation of a yellow laser in a thin-film lithium niobate waveguide.

Yellow lasers with high efficiency and tunability play an essential role in many applications. Here, we demonstrate the sum-frequency generation (SFG) of yellow light on a periodically poled thin-film lithium niobate (PP-TFLN) waveguide. Taking advantage of large χ(2) nonlinearity, a high normalized conversion efficiency of 10,097% (W·cm2) is obtained with pump wavelengths of 1317.7 and 1064 nm. An absolute conversion efficiency of 24.17% is recorded with on-chip pump powers of 10.4 dBm (O-band) and 13.5 dBm (1064 nm).

Fundamental spatial mode high power 808 nm double trench wide ridge waveguide laser

—Lasers operating at a wavelength of 808 nm, with watt-level output power and high beam quality in the fundamental spatial mode, have garnered significant attention due to their potential applications across various fields. Transverse optical confinement in double trench ridge waveguide lasers is determined by the width of the ridge and the refractive index difference between the ridge and trench. In this study, we have designed and fabricated a wide ridge laser operating at 808 nm with high power output and stable fundamental spatial mode based on this principle. The fundamental spatial mode operation was successfully achieved with an 8 μm ridge waveguide laser, producing an impressive output power of 1.3 W. The device exhibits a stable far-field as the current was increased from 0.3 A to 1.8 A. The laser's output power exhibits a 14% reduction with an increase in temperature of 80 °C, demonstrating a decrease rate of only 1.25 mW/°C and a wavelength variation rate of 0.22 nm/°C, indicating low sensitivity to temperature changes.

Monolithically integrated multimode interference coupler-based master oscillator power amplifier with dual-wavelength emission around 830 nm

A monolithically integrated dual-wavelength multimode interference coupler-based master oscillator power amplifier is presented. It consists of two shallowly etched, laterally separated ridge waveguide laser cavities as master oscillators with individual distributed Bragg reflector gratings as cavity mirrors. A deeply etched coupling section containing S-bend shaped waveguides and a multimode interference coupler is used to couple the laser emission of the master oscillators into a shallowly etched single waveguide serving as power amplifier. Changing the etch depth for the coupling section enables a compact device layout. In addition, increased radiation angles of modes not coupled into the power amplifier help to suppress beam steering, otherwise indicated by laterally separated far-field intensity distributions. The device provides 0.5 W of dual-wavelength emission around 830 nm in individual and common operation. As designed, both emission wavelengths are separated by 0.5 nm with spectral widths below 20 pm, limited by the spectral resolution of the spectrometer. Both peak wavelengths remain within spectral windows of 50 pm within the available power range. This enables full flexibility selecting operating points for applications such as shifted excitation Raman difference spectroscopy and the generation of THz emission by photomixing. The emission wavelengths can additionally be non-continuously tuned by applying a heater current to resistors implemented next to the distributed Bragg reflector gratings. As an example, selected spectral distances of 0.5 nm, 1.0 nm, 1.5 nm, and 2.0 nm are demonstrated. Near field widths of 5 μm and far field angles of 17° result in beam propagation ratios of 1.4 (1/e2) in all operation modes and enable easy beam shaping or optical single-mode fiber coupling.

Nonlinear-mirror mode-locked crystal waveguide laser by intracavity fourth-harmonic loss modulation: publisher's note.

This publisher's note contains a correction to Opt. Lett.48, 6064 (2024)10.1364/OL.509275.

Miniaturizing a coherent beam combining system into a compact laser diode module.

We present a laser module with dimensions of 76×43×15m m 3 that for the first time to our knowledge realizes a coherent beam combination in such a compact device, using two tapered amplifiers seeded by a distributed Bragg reflector ridge waveguide laser diode operating at 761nm in a single longitudinal mode. The generated combined optical power is up to 5W continuous wave with a combing efficiency of 85%. The phase of the system is controlled by the current in the ridge waveguide section of one of the tapered amplifiers. The phase-stabilization process is automated using a reverse hill-climbing algorithm and an ATmega328P microcontroller.

Passive waveguide lasers Q-switched by evanescent-field interaction with high-energy ion-irradiated monolayer graphene

The transfer of two-dimensional (2D) nanomaterials as saturable absorbers to the surface of optical waveguides is extremely attractive for increasing the laser damage threshold of 2D nanomaterials and the laser power of pulsed waveguide lasers. We report on the design and fabrication of passively Q-switched waveguide lasers based on monolayer graphene covered on the surface of neodymium-doped yttrium aluminum garnet (Nd:YAG) cladding waveguides under high-energy carbon ion irradiation. The monolayer graphene is forced into close contact with the waveguide surface by energetic carbon ions, which leads to an excellent coupling of the evanescent wave with graphene. As a result, highly efficient Q-switched pulsed waveguide lasers with high output power, short pulse duration, and high repetition rate are realized under both TE and TM polarized optical pumping. Among all lasers in this experiment, the shortest pulse duration of 38.7 ns is provided by the ion-irradiated larger waveguide system under TE optical pumping.

High efficiency diode-pumped Pr:LiLuF4 visible lasers in femtosecond-laser-written waveguides.

In this work we investigate the power scaling of diode-pumped Pr:LiLuF4 waveguide lasers produced by direct femtosecond writing. The waveguides studied consisted in depressed cladding waveguides with different geometries. We observed laser emission at 604 nm, achieving a maximum output power of 275 mW and a slope efficiency of 40%, and 721 nm, demonstrating 310 mW of output power and a slope efficiency of 50%. Moreover, we obtained, what we believe is for the first time in a diode-pumped waveguide, laser emission at 523 nm, with a maximum output power of 65 mW and a slope efficiency of 11%. In the end, we also demonstrated the first diode-pumped operation of a single-transverse-mode waveguide laser at 721 nm, reaching a maximum output power of 28 mW and maintaining a high quality beam with an M2 of 1.1.

Modeling of fluctuations in dynamical optoelectronic device simulations within a Maxwell-density matrix Langevin approach

We present a full-wave Maxwell-density matrix simulation tool including c-number stochastic noise terms for the modeling of the spatiotemporal dynamics in active photonic devices, such as quantum cascade lasers and quantum dot structures. The coherent light–matter interaction in such devices plays an important role in the generation of frequency combs and other nonlinear and non-classical optical phenomena. Since the emergence of nonlinear and non-classical features is directly linked to the noise properties, detailed simulations of the noise characteristics are required for the development of low-noise quantum optoelectronic sources. Our semiclassical simulation framework is based on the Lindblad equation for the electron dynamics, coupled with Maxwell’s equations for optical propagation in the laser waveguide. Fluctuations arising from the interactions of the optical field and quantum system with their reservoirs are treated within the quantum Langevin theory. Here, the fluctuations are included by adding stochastic c-number terms to the Maxwell-density matrix equations. The implementation in the mbsolve dynamic simulation framework is publicly available.

Quantification of losses in bent waveguides within DBR-RW laser diodes emitting at 785 nm

An experimental study of straight and bent distributed Bragg reflector (DBR) ridge waveguide (RW) lasers and Fabry–Pérot (FP) RW lasers emitting at 785 nm is presented. To determine the losses introduced by the bent waveguides within DBR-RW lasers, different laser designs were manufactured and characterized. The bent waveguides investigated here within DBR-RW laser diodes are sine-shaped S-bends. S-bends with three different lateral offsets are manufactured. The experimental characterization of FP lasers and the straight DBR-RW lasers with different coatings at the rear facet enables a rough estimation of the losses caused by the DBR grating and the determination of the DBR reflectivity. Furthermore, additional losses in the bent DBR-RW lasers caused by the S-bend (i.e. radiation and scattering losses) are quantified by comparing them to the straight DBR-RW lasers. Within the active resonator, the S-bend losses amount to α Bend = 0.6 cm−1 (α Bend = 0.5 dB) for the smallest manufactured lateral S-bend offset H = 40 μm. For both straight and bent DBR-RW lasers spectrally narrow single-mode emission is obtained. A lateral beam width of 3.8 μm (using second moments) and a lateral far-field angle of about 18° and 19.5° (using second moments) for the straight and S-bend DBR-RW are measured, respectively. This gives a lateral beam propagation ratio of 1.2 and 1.3 (using second moments) for straight and S-bend DBR-RW, respectively. The radiation loss in dependency of the lateral S-bend offset is simulated and compared to experimentally estimated S-bend losses for bent DBR-RW lasers (H = 40 μm, H = 60 μm and H = 70 μm).

Er3+:YLiF4 channeled waveguide laser near 2.7-2.8 µm fabricated by femtosecond laser inscription.

We report, for the first time to our knowledge, a demonstration of robust waveguide lasing near 2.7-2.8 µm in an erbium-doped fluoride host. Femtosecond laser inscription was employed to fabricate 50- and 70-µm diameter channeled waveguides inside an Er3+:YLiF4 crystal. The best power performance was obtained with the 70-µm diameter waveguide and 16% transmitting output coupler. The propagation loss and refractive index contrast were measured as 0.23 dB/cm and 7.1 × 10-4, respectively, for the 70-µm diameter waveguide. Both self-Q-switched (SQS) and continuous-wave (CW) operations could be obtained. During the SQS operation, as short as 240-ns pulses with average power of 51 mW, repetition rate of 368 kHz, and power slope efficiency of 15.2% were generated at the wavelength of 2717 nm with 465 mW of the pump power. During the CW operation, as high as 66 mW of output power was achieved at 2808 nm by using 460 mW of pump power at 798 nm, with a power slope efficiency of 19.6%.