On-chip photonic components, particularly for switching applications, are becoming more and more in demand to create high-density photonic integrated circuits in the THz regime. The nonvolatile switching can meet the requirement of power saving when the complexity of integrated circuits grows in the near future. Here, we propose and analyse the THz wave switching using a nonvolatile phase change material (PCM) Ge2Sb2Te5 (GST) integrated on a broadband THz dielectric waveguide that is encompassed by a novel micro-fins heater. In the proposed device, a small patch of GST of length 1500μm integrated on top of the HRFZ-Si waveguide provides an acceptable insertion loss and high extinction ratio for its broadband operation in the frequency span of 0.5–1.0 THz. Using a novel micro-fins heater, the phase transformation of the GST is carried out through Joule heating. Short electrical pulses of 11 ms and 4μs are found to be capable of raising the temperature of the GST region above its crystallization and re-amorphization temperature, respectively. The corresponding energy consumption for crystallization and re-amorphization is found to be 61.73 mJ and 19.84 mJ, respectively. The switching speed of our reported device is 100 times better than the previously reported metamaterial-based THz photonic switches using PCMs. Since GST is nonvolatile in nature, no continuous pump power is needed to maintain the particular switching state of the proposed device. The work reported here is a step forward for enabling THz photonic switching, and further THz circuits, in guided wave photonic platform using CMOS-compatible materials.