Water-gated Field-effect Transistor Research Articles

Effect of the gate electrodes/water interface on the performance of ZnO-based water gate field-effect transistors

Field-effect transistors can be gated with water as the dielectric due to the formation of electrical double layers at water interfaces, which results in high specific capacitance and low voltage operation. The incorporation of analytes in aqueous suspension influences the water's electrical properties changing the water-gated field-effect transistors (WGFETs) performance and allowing it to be used as sensor and biosensor platforms. However, the material used as a gate electrode can affect the transistor's performance due to several factors, as the metal work function, its electrochemical range, and the presence of physicochemical reactions. Here, we evaluated the performance of WGFETs using spray-deposited zinc oxide (ZnO) as the active layer and five different gate electrodes: graphite pencil (GP), gold (Au), indium tin oxide (ITO), tungsten (W), and tin (Sn). The threshold voltage (VTH) values found were 0.41, 0.44, 1.12, 1.21 and 1.74 V for the Sn, W, Au, GP and ITO electrodes, respectively. The field-effect mobility was strongly influenced by the gate material, varying in the range from 0.07 to 0.46 cm2/Vs. The WGFETs operating with W and Sn gates showed the highest Ion/Ioff ratio and the lowest VTH when compared to the other electrodes. However, this characteristic may be associated with the formation of a natural oxide layer at its interface with water, which could be undesirable from the stability view. The use of ITO as the gate electrode resulted in a large hysteresis and two orders of magnitude smaller current in the output curve compared to Au and GP. Among the materials used as the gate electrode, GP stands out mainly because it gives the lowest subthreshold swing (SS = 90 mV/dec) and the highest transconductance (gm = 0.40 mS). Also, the GP matches with ZnO as biocompatible material for low-cost, eco-friendly, and metal-free electronics. In summary, the results showed that the gate electrode significantly influences the main parameters of the device and, therefore, should be an analysis factor when aiming to use WGFETs as sensors.

A Rapidly Stabilizing Water-Gated Field-Effect Transistor Based on Printed Single-Walled Carbon Nanotubes for Biosensing Applications.

Biosensors are expected to revolutionize disease management through provision of low-cost diagnostic platforms for molecular and pathogenic detection with high sensitivity and short response time. In this context, there has been an ever-increasing interest in using electrolyte-gated field-effect transistors (EG-FETs) for biosensing applications owing to their expanding potential of being employed for label-free detection of a broad range of biomarkers with high selectivity and sensitivity while operating at sub-volt working potentials. Although organic semiconductors have been widely utilized as the channel in EG-FETs, primarily due to their compatibility with cost-effective low-temperature solution-processing fabrication techniques, alternative carbon-based platforms have the potential to provide similar advantages with improved electronic performances. Here, we propose the use of inkjet-printed polymer-wrapped monochiral single-walled carbon nanotubes (s-SWCNTs) for the channel of EG-FETs in an aqueous environment. In particular, we show that our EG-CNTFETs require only an hour of stabilization before producing a highly stable response suitable for biosensing, with a drastic time reduction with respect to the most exploited organic semiconductor for biosensors. As a proof-of-principle, we successfully employed our water-gated device to detect the well-known biotin–streptavidin binding event.

Water-Gated Transistor Using Ion Exchange Resin for Potentiometric Fluoride Sensing

We introduce fluoride-selective anion exchange resin sorbents as sensitisers into membranes for water-gated field effect transistors (WGTFTs). Sorbents were prepared via metal (La or Al)-loading of a commercial macroporous aminophosphonic acid resin, PurometTM MTS9501, and were filled into a plasticised poly(vinyl chloride) (PVC) phase transfer membrane. We found a potentiometric response (membrane potential leading to WGTFT threshold shift) to fluoride following a Langmuir–Freundlich (LF) adsorption isotherm with saturated membrane potential up to ~480 mV, extremely low characteristic concentration c1/2 = 1/K, and picomolar limit of detection (LoD), even though ion exchange did not build up charge on the resin. La-loading gave a superior response compared to Al-loading. Membrane potential characteristics were distinctly different from charge accumulating sensitisers (e.g., organic macrocycles) but similar to the Cs+ (cation) selective ion-exchanging zeolite mineral ‘mordenite’. We propose a mechanism for the observed threshold shift and investigate interference from co-solutes. Strong interference from carbonate was brought under control by ‘diluting’ metal loading in the resin. This work sets a template for future studies using an entirely new ‘family’ of sensitisers in applications where very low limit of detection is essential such as for ions of arsenic, mercury, copper, palladium, and gold.

Monitoring the lead-and-copper rule with a water-gated field effect transistor.

We use the natural zeolite clinoptilolite as the sensitive element in a plasticised PVC membrane. Separating a sample pool and a reference pool with such a membrane in water-gated SnO2 thin-film transistor (SnO2 WGTFT) leads to membrane potential, and thus transistor threshold shift in response to the common drinking water pollutants Pb2+ or Cu2+ in the sample pool. Threshold shift with ion concentration, c, follows a Langmuir-Freundlich (LF) characteristic. As the LF characteristic shows the steepest slope in the limit c → 0, this opens a window to limits-of-detection (LoDs) far below the 'action levels' of the 'lead-and-copper rule' for drinking water: Pb2+: LoD 0.9 nM vs 72 nM action level, Cu2+: LoD 14 nM vs 20.5 μM action level. LoDs are far lower than for membranes using organic macrocycles as their sensitive elements. Threshold shifts at the lead and copper action levels are more significant than shifts in response to variations in the concentration of non-toxic co-cations, and we discuss in detail how to moderate interference. The selective response to lead and copper qualifies clinoptilolite-sensitised WGTFTs as a low footprint sensor technology for monitoring the lead-and-copper rule, and to confirm the effectiveness of attempts to extract lead and copper from water.

Realization and AC modeling of electronic circuits with water-gated field effect transistors (WG-FETs) based on gate probe distance

We present AC modeling of WG-FET devices based on gate probe distance. Small- and large-signal models are proposed. It is shown that unity gain frequency is inversely proportional to gate distance. Also, common source amplifier, inverter, and ring oscillator circuits are fabricated with WG-FET devices, which use 16 nm-thick mono-Si film as channel layer, for the first time. Circuit simulations are performed based on AC models. Results are verified with experimental measurements using de-ionized (DI) water. For common source amplifier, fUG is measured as 21 Hz for 2 mm gate distance, and it is increased to 1.2 kHz when gate distance is decreased to 200 μm. For inverter, rail-to-rail operation is observed with tPLH of 24 ms and tPHL of 58 ms for 1 square-wave input signal at 1 Hz. Gain is measured as −11 V/V at switching threshold. Ring oscillator is realized with five inverters. A square-wave output signal with amplitude of 840 and frequency of 2.6 Hz is obtained. AC modeling of WG-FET enables realization of advanced circuits which are inherently compatible with fluidic systems. Therefore, they can be valuable assets especially in microfluidic applications.

Modelling and Realization of a Water-Gated Field Effect Transistor (WG-FET) Using 16-nm-Thick Mono-Si Film

We introduced a novel water-gated field effect transistor (WG-FET) which uses 16-nm-thick mono-Si film as active layer. WG-FET devices use electrical double layer (EDL) as gate insulator and operate under 1 V without causing any electrochemical reactions. Performance parameters based on voltage distribution on EDL are extracted and current-voltage relations are modelled. Both probe- and planar-gate WG-FETs with insulated and uninsulated source-drain electrodes are simulated, fabricated and tested. Best on/off ratios are measured for probe-gate devices as 23,000 A/A and 85,000 A/A with insulated and uninsulated source-drain electrodes, respectively. Planar-gate devices with source-drain insulation had inferior on/off ratio of 1,100 A/A with 600 μm gate distance and it decreased to 45 A/A when gate distance is increased to 3000 μm. Without source-drain electrode insulation, proper transistor operation is not obtained with planar-gate devices. All measurement results were in agreement with theoretical models. WG-FET is a promising device platform for microfluidic applications where sensors and read-out circuits can be integrated at transistor level.

Improved Repeatability in Planar Water-gated Field Effect Transistor (WG-FET) with 16-nm-thick Single Crystalline Si Film

Repeatable operation of a water-gated field effect transistor (WG-FET) with 16-nm-thick single crystalline silicon (Si) film is reported for the first time. For devices with fluidic interface, repeatability is highly important, especially when they are used for microfluidic applications such as biomedical sensors or lab-on-a-chip implementations. Previous devices have shown almost an order of magnitude decrease in electrical current levels after the first operation. In this work, stable results are obtained for at least ten days after the first operation by insulating silicon oxide (SiO2) region surrounding the active area.

Realization of a Planar Water-gated Field Effect Transistor (WG-FET) Using 16-nm-thick Single Crystalline Si Film

A water-gated field effect transistor (WG-FET) with 16-nm-thick single crystalline silicon film is realized for the first time and tested with both probe and planar gate electrode structures. Simple and cheap process steps make it suitable for low cost applications. Planar gate electrode topology simplifies the integration of transistors on the same die. Water as gate dielectric provides compatibility with fluidic devices. The transistor works below 1 V and has a threshold voltage, Vth, of -0.18 V for probe gate and -0.09 V for planar gate electrode. On/off ratios for probe and planar gate structures are measured as 14000A/A and 250A/A, respectively.