In recent years, there has been a growing interest in novel cyan-emitting phosphors to address the cyan gap in the emission spectra of commercial WLEDs. Herein, the cyan-emitting Bi3+-doped Y2O3 (Y2O3:Bi3+) powder was synthesized by a facile solid-state reaction method. XRD analysis confirmed the substitution of Y3+ ions by Bi3+ ions in both C2 and S6 sites within the Y2O3 lattice. The high-purity Y2O3:Bi3+ phosphors under the excitation of NUV light exhibited a prominent cyan emission band centered at 492 nm and a faint violet emission shoulder at 410 nm, attributed to the 3P1 (3A)→1S0 and 3P1 (3Eu) → 1S0 transitions of the Bi3+ ions in the C2 and S6 sites, respectively. The highest PL intensity was achieved with 2%Bi3+ doping and annealing at 1300°C for 5 hours in air. For the first time, it is reported that the PL intensity of Y2O3:Bi3+ phosphor measured at 423 K (150°C) remains at 82% of its intensity at 298 K (25°C), indicating its excellent thermal stability. A mechanism proposing energy transfer from the 3B level of the C2 to 3Eu level of the S6 site in the Y2O3 lattice contributes to the phosphor's thermal stability. It is suggested that the relative PL intensity between 3B and 3Eu levels significantly influences the thermal stability of the Y2O3:Bi3+ phosphors. A cyan LED device was successfully fabricated by coating the Y2O3:Bi3+ phosphor layer onto the top surface of a 310 nm NUV-LED chip. The internal quantum efficiency (IQE) of the Y2O3:2%Bi3+ phosphors was estimated to be approximately 73.85%. These findings indicate that the synthesized Y2O3:Bi3+ phosphor is a promising candidate for use as a cyan-emitting component in NUV-pumped WLED applications.
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