Voltage-induced Strain Research Articles

Tunable dynamic microwave properties of a magnetic skyrmion manipulated by strains

In this paper, we theoretically studied the tunable dynamic microwave properties of a magnetic skyrmion manipulated by strains through micromagnetic simulations. The strains are induced by voltage due to the converse piezoelectric effect and then applied to modulate the dynamic characteristics through the magneto-elastic coupling effect. The tunable dynamic microwave characteristics of a breathing mode and gyration modes are investigated. The resonant frequency of the breathing mode increases abruptly and then decreases slowly with the strain changing from compressive to tensile. A clockwise gyrotropic mode has been obtained, and the resonant frequency keeps increasing with the strain changing from compressive to tensile. In particular, strains can induce different gyrotropic trajectories of the skyrmion driven by an in-plane microwave field. Our results may contribute to the understanding of dynamic properties of skyrmions manipulated by voltage-induced strains and provide a method to realize tunable spintronic microwave devices based on skyrmion.

Absence of Walker Breakdown in the Dynamics of Chiral Néel Domain Walls Driven by In-Plane Strain Gradients

The influence of mechanical strain on the static and dynamic properties of chiral domain walls (DWs) in perpendicularly magnetized strips is investigated using micromagnetic simulations and a one-dimensional model. While a uniform strain allows one to reversibly switch the domain-wall configuration at rest between Bloch and N\'eel patterns, strain gradients are suggested as an energy-sustainable means to drive domain-wall motion without the need for magnetic fields or electrical currents. It is shown that an in-plane strain gradient creates a force on a domain wall that drives it towards a region of higher tensile (compressive) strain for materials with positive (negative) magnetostriction. Moreover, due to the dependence of the domain-wall internal energy on the in-plane strain, a damping torque proportional to the local strain arises during motion that opposes the precessional torque due to the driving force, which is proportional to the strain gradient. After a transient period, where both the internal DW angle and the velocity change nonmonotonically, reaching their maximum values asynchronously, the two torques balance each other. This compensation prevents the onset of turbulent domain-wall dynamics, and steady domain-wall motion with a constant velocity is asymptotically reached for an arbitrarily large strain gradient. Despite this complex dynamics, our work shows that average domain-wall velocities in the range of 500 m/s can be obtained using voltage-induced strain in piezoelectric/ferromagnetic devices under realistic conditions.

Skyrmion transport driven by pure voltage generated strain gradient

The magnetic skyrmion transport driven by pure voltage-induced strain gradient is proposed and studied via micromagnetic simulation. Through combining the skyrmion with multiferroic heterojunction, a voltage-induced uniaxial strain gradient is adjusted to move skyrmions. In the system, a pair of short-circuited trapezoidal top electrodes can generate the symmetric strain. Due to the symmetry of strain, the magnetic skyrmion can be driven with a linear motion in the middle of the nanostrip without deviation. We calculate the strain distribution generated by the trapezoidal top electrodes pair, and further investigate the influence of the strain intensity as well as the strain gradient on the skyrmion velocity. Our findings provide a stable and low-energy regulation method for skyrmion transport.

Theoretical routes for current-free magnetization switching induced by joint effects of strain and Dzyaloshinskii–Moriya interaction

Voltage-induced strain is regarded as an energy-efficient choice of tuning spin-dynamics. However, studies on the strain-mediated switching of magnetization in a perpendicular-magnetic-anisotropy layer are few because of the uncertainties that arise from the magnetization oscillation at high strain. In this work, we demonstrate theoretically how to deterministically switch the perpendicular magnetization in an ultrathin magnetic nanodisk by combining biaxial in-plane strain with the Dzyaloshinskii–Moriya interaction (DMI). The magnetization-switching process is carefully investigated under different strains and DMI strengths. The underlying switching mechanism is attributed to the remnant magnetization component, which deviates away from the film plane during the strain-pulse-impulsion period and which is also highly dependent on the DMI. Based on simulation results, a theoretical route for obtaining deterministic switching regarding strain and DMI is established. In this route, the minimum duration of the strain pulse can be shortened to a critical time of 2.5 ns as the strain increases to 7000 ppm at a DMI value of 0.6 mJ/m2. Moreover, nonvolatile and reversible switching between the spin-up and spin-down states of perpendicular magnetization is realized using pulses of biaxial in-plane isotropic strain. This switching occurs via an intermediate skyrmion and shows potential in overcoming the edge-roughness-related pinning that occurs in spin–orbit-torque current-induced switching. This study provides a robust insight into strain-induced current-free magnetization switching, providing a guide for experimental research into the strain-mediated voltage control of memory applications.

Nanoscale light- and voltage-induced lattice strain in perovskite thin films.

We report on localized nonlinear lattice deformation and nanoscale structural rearrangement in methylammonium lead triiodide films triggered by the combined action of light and voltage. These effects, revealed by second harmonic piezoresponse force microscopy, are connected with organic cation motion, implicating localized cation migration as a key contributor to perovskite optoelectronic device instability under operating conditions.

An Integrated Design and Fabrication Strategy for Planar Soft Dielectric Elastomer Actuators

Dielectric elastomers (DEs) are promising soft actuators for use in soft material robots, due to their considerable voltage-induced strain. The actuator's behavior is highly nonlinear due to the complex interplay between the DE, the support structure, and the input electric field, making it a big challenge to automatically design dielectric elastomer actuators (DEAs). Here, in this article, we present an integrated design strategy for planar DEAs, aiming to realize their full potential. To endow the actuator module with the maximal actuation strain, we carry out dimensionless analysis to identify the key design variables, develop a fast finite element analysis model, and thoroughly investigate how the geometric structuring and the material prestretch tailor the voltage-induced deformation. We also provide a fabrication strategy by patterning the compliant electrodes on the DE membrane and then directly printing the support structure made of thermoplastic polyurethane. The experiments show that the optimized actuator obtains a remarkable nominal strain up to 38.6%. We also characterize the dynamic performance of the optimized actuator, evaluate its energy density and power density, and develop a soft locomotion robot that can crawl through a confined tunnel, at a fast moving speed up to 0.17 body length/s.

Voltage-Driven Adaptive Spintronic Neuron for Energy-Efficient Neuromorphic ComputingSupported by the National Natural Science Foundation of China under Grants Nos. 61804184 and 11975311, the Natural Science Basic Research Plan in Shaanxi Province of China under Grant No. 2020JQ470, and the Foundation of Independent Scientific Research under Grant Nos. YNJC19070501, YNJC19070502, and YNJC19070504.

A spintronics neuron device based on voltage-induced strain is proposed. The stochastic switching behavior, which can mimic the firing behavior of neurons, is obtained by using two voltage signals to control the in-plane magnetization of a free layer of magneto-tunneling junction. One voltage signal is used as the input, and the other voltage signal can be used to tune the activation function (Sigmoid-like) of spin neurons. Therefore, this voltage-driven tunable spin neuron does not necessarily use energy-inefficient Oersted fields and spin-polarized current. Moreover, a voltage-control reading operation is presented, which can achieve the transition of activation function from Sigmoid-like to ReLU-like. A three-layer artificial neural network based on the voltage-driven spin neurons is constructed to recognize the handwritten digits from the MNIST dataset. For the MNIST handwritten dataset, the design achieves 97.75% recognition accuracy. The present results indicate that the voltage-driven adaptive spintronic neuron has the potential to realize energy-efficient well-adapted neuromorphic computing.

Mechanics of dielectric elastomer structures: A review

In the past decade, the development of theory has deeply revealed the electromechanical coupling deformation mechanism of dielectric elastomer (DE). Many theoretical predictions on highly nonlinear deformation of dielectric elastomer have been verified by experiments. With the guidance of theory, the voltage-induced areal strain of dielectric elastomer has been increased from 100% in the pioneering work to the current record of 2200% and the energy density of a dielectric elastomer generator has reached 780 mJ/g. Much more developments have been realized on the applications of DE transducers in the fields of bioinspired artificial muscles, soft robotics, tunable lenses, and haptic interfaces. However, there is a gap between theory and application. Great potentials of developing DE transducers with the aid of a systematic theory have yet to be explored. This paper reviews the recent advances in the theory of dielectric elastomer and demonstrates some examples of using theory to design DE transducers. 9 boundary value problems of DE structures are analyzed from the simplest homogeneous deformation of a flat membrane to the highly complex bifurcations of a tube. Comparisons between theory and experiment are discussed. The viscous effect and the vibration of dielectric elastomer are reviewed. The developments of DE transducers and new dielectric materials are also reviewed. We summarize the performance of existing DE transducers with different configurations and make some discussions. It is hoped that the mechanics of DE structures can help to develop high-performance DE transducers in the future.

Voltage-induced strain to control the magnetization of bi FeRh/PZT and tri PZT/FeRh/PZT layered magnetoelectric composites

The bi- and tri- layered magnetoelectric composites were fabricated from magnetic Fe49Rh51 and piezoelectric PbZr0.53Ti0.47O3 materials. It was shown the electric field-induced stresses reduce the magnetization around magnetic phase transition temperature of Fe49Rh51: by 5.4% for tri-layer PZT/FeRh/PZT composite and by 3.6% for bi-layer FeRh/PZT composite. The magnetoelectric properties were studied at 320 K, the magnetization rate was estimated for the magnetic field of 0.5 T. The heterogeneous distributions of stresses and magnetization in volume of magnetic layer under applied magnetic and electric fields were demonstrated using COMSOL Multiphysics software. The obtained results demonstrate the tri-layered composite is more effective for tuning the magnetization

Voltage-induced strain clocking of nanomagnets with perpendicular magnetic anisotropies

Nanomagnetic logic (NML) has attracted attention during the last two decades due to its promise of high energy efficiency combined with non-volatility. Data transmission in NML relies on Bennett clocking through dipole interaction between neighboring nanomagnetic bits. This paper uses a fully coupled finite element model to simulate Bennett clocking based on strain-mediated multiferroic system for Ni, CoFeB and Terfenol-D with perpendicular magnetic anisotropies. Simulation results demonstrate that Terfenol-D system has the highest energy efficiency, which is 2 orders of magnitude more efficient than Ni and CoFeB. However, the high efficiency is associated with switching incoherency due to its large magnetostriction coefficient. It is also suggested that the CoFeB clocking system has lower bit-density than in Ni or Terfenol-D systems due to its large dipole coupling. Moreover, we demonstrate that the precessional perpendicular switching and the Bennett clocking can be achieved using the same strain-mediated multiferroic architecture with different voltage pulsing. This study opens new possibilities to an all-spin in-memory computing system.

A Strain‐Mediated Magnetoelectric‐Spin‐Torque Hybrid Structure

AbstractMagnetization dynamics induced by spin–orbit torques in a heavy‐metal/ferromagnet can potentially be used to design low‐power spintronics and logic devices. Recent computations have suggested that a strain‐mediated spin–orbit torque (SOT) switching in magnetoelectric (ME) heterostructures is fast, energy‐efficient, and permits a deterministic 180° magnetization switching. However, its experimental realization has remained elusive. Here, the coexistence of the strain‐mediated ME coupling and the SOT in a CoFeB/Pt/ferroelectric hybrid structure is shown experimentally. The voltage‐induced strain only slightly modifies the efficiency of SOT generation, but it gives rise to an effective magnetic anisotropy and rotates the magnetic easy axis which eliminates the incubation delay in current‐induced magnetization switching. The phase field simulations show that the electric‐field‐induced effective magnetic anisotropy field can reduce the switching time approximately by a factor of three for SOT in‐plane magnetization switching. It is anticipated that such strain‐mediated ME‐SOT hybrid structures may enable field‐free, ultrafast magnetization switching.

Strain-mediated voltage-controlled switching of magnetic skyrmions in nanostructures

Magnetic skyrmions are swirling spin structures stabilized typically by the Dyzaloshinskii-Moriya interaction. The existing control of magnetic skyrmions has often relied on the use of an electric current, which may cause overheating in densely packed devices. Here we demonstrate, using phase-field simulations, that an isolated Néel skyrmion in a magnetic nanodisk can be repeatedly created and deleted by voltage-induced strains from a juxtaposed piezoelectric. Such a skyrmion switching is non-volatile, and consumes only ~0.5 fJ per switching which is about five orders of magnitude smaller than that by current-induced spin-transfer-torques. It is found that the strain-mediated skyrmion creation occurs through an intermediate vortex-like spin structure, and that the skyrmion deletion occurs though a homogenous shrinkage during which the Néel wall is temporarily transformed to a vortex-wall. These findings are expected to stimulate experimental research into strain-mediated voltage control of skyrmions, as well as other chiral spin structures for low-power spintronics.

(Invited) Highly Stretchable and Transparent Ionogels as Nonvolatile Conductors for Dielectric Elastomer Transducers

Large deformation of soft materials is harnessed to provide functions in the nascent field of soft machines. This paper describes a new class of systems enabled by highly stretchable, transparent, stable ionogels. We synthesize an ionogel by polymerizing acrylic acid in ionic liquid 1-ethyl-3-methylimidazolium ethylsulfate ([C2mim][EtSO4]). The ionogel exhibits desired attributes of adequate conductivity (0.22 S m−1), low elastic modulus (∼3 kPa), large rupturing stretch (∼4.6), and negligible hysteresis and degradation after cyclic stretches of large amplitude. Using the ionogel and a dielectric elastomer, we fabricate electromechanical transducers that achieve a voltage-induced areal strain of 140%. The ionogel is somewhat hygroscopic, but the transducers remain stable after a million cycles of excitation in a dry oven and in air. The transparency of the ionogels enable the transducers with conductors placed in the path of light, and the nonvolatility of the ionogels enable the transducers to be used in open air.

Large Interfacial Magnetostriction in (Co/Ni)4/Pb(Mg1/3Nb2/3)O3-PbTiO3 Multiferroic Heterostructures.

The magnetoelastic behavior of multiferroic heterostructures-coupling of magnetic anisotropy or domain dynamics to structural deformations-has been intensively studied for developing materials for energy-efficient, spin-based applications. Here, we report on a large, interface-dominated magnetostriction in (Co/Ni)4/Pb(Mg1/3Nb2/3)O3-PbTiO3 multiferroic heterostructures. Ferromagnetic resonance spectroscopy under voltage-induced strains enabled estimation of the saturation magnetostriction as a function of Ni thickness. The volume and the interface components to the saturation magnetostriction are (6.6 ± 0.9) × 10-6 and (-2.2 ± 0.2) × 10-14 m, respectively. Similar to perpendicular magnetic anisotropy in Co/Ni, the large, negative magnetostriction originates from the Co/Ni interfaces. This interfacial functionality delivers an effect over 300% larger than the bulk contribution and can enable low-energy, nanoelectronic devices that combine the tunable magnetic and magnetostrictive properties of Co/Ni multilayers with the ferroelectric properties of Pb(Mg1/3Nb2/3)O3-PbTiO3.

Deterministic control of magnetic vortex wall chirality by electric field

Concepts for information storage and logical processing based on magnetic domain walls have great potential for implementation in future information and communications technologies. To date, the need to apply power hungry magnetic fields or heat dissipating spin polarized currents to manipulate magnetic domain walls has limited the development of such technologies. The possibility of controlling magnetic domain walls using voltages offers an energy efficient route to overcome these limitations. Here we show that a voltage-induced uniaxial strain induces reversible deterministic switching of the chirality of a magnetic vortex wall. We discuss how this functionality will be applicable to schemes for information storage and logical processing, making a significant step towards the practical implementation of magnetic domain walls in energy efficient computing.

Exploring performance, coherence, and clocking of magnetization in multiferroic four-state nanomagnets

Nanomagnetic memory and logic are currently seen as promising candidates to replace current digital computing architectures due to its superior energy-efficiency, non-volatility and propensity for highly dense and low-power applications. In this work, we investigate the use of shape engineering (concave and diamond shape) to introduce biaxial anisotropy in single domain nanomagnets, giving rise to multiple easy and hard axes. Such nanomagnets, with dimensions of ∼100nm×100nm, double the logic density of conventional two-state nanomagnetic devices by encoding more information (four binary bits: “00”, “11”, “10”, “01”) per nanomagnet and can be used in memory and logic devices as well as in higher order information processing applications. We study reliability, magnetization switching coherence, and show, for the first time, the use of voltage-induced strain for the clocking of magnetization in these four-state nanomagnets. Critical parameters such as size, thickness, concavity, and geometry of two types of four-state nanomagnets are also investigated. This analytical study provides important insights into achieving reliable and coherent single domain nanomagnets and low-energy magnetization clocking in four-state nanomagnets, paving the way for potential applications in advanced technologies.

Binary information propagation in circular magnetic nanodot arrays using strain induced magnetic anisotropy

Nanomagnetic logic has emerged as a potential replacement for traditional Complementary Metal Oxide Semiconductor (CMOS) based logic because of superior energy-efficiency (Salahuddin and Datta 2007 Appl. Phys. Lett. 90 093503, Cowburn and Welland 2000 Science 287 1466–68). One implementation of nanomagnetic logic employs shape-anisotropic (e.g. elliptical) ferromagnets (with two stable magnetization orientations) as binary switches that rely on dipole−dipole interaction to communicate binary information (Cowburn and Welland 2000 Science 287 1466–8, Csaba et al 2002 IEEE Trans. Nanotechnol. 1 209–13, Carlton et al 2008 Nano Lett. 8 4173–8, Atulasimha and Bandyopadhyay 2010 Appl. Phys. Lett. 97 173105, Roy et al 2011 Appl. Phys. Lett. 99 063108, Fashami et al 2011 Nanotechnology 22 155201, Tiercelin et al 2011 Appl. Phys. Lett. 99, Alam et al 2010 IEEE Trans. Nanotechnol. 9 348–51 and Bhowmik et al 2013 Nat. Nanotechnol. 9 59–63). Normally, circular nanomagnets are incompatible with this approach since they lack distinct stable in-plane magnetization orientations to encode bits. However, circular magnetoelastic nanomagnets can be made bi-stable with a voltage induced anisotropic strain, which provides two significant advantages for nanomagnetic logic applications. First, the shape-anisotropy energy barrier is eliminated which reduces the amount of energy required to reorient the magnetization. Second, the in-plane size can be reduced (∼20 nm) which was previously not possible due to thermal stability issues. In circular magnetoelastic nanomagnets, a voltage induced strain stabilizes the magnetization even at this size overcoming the thermal stability issue. In this paper, we analytically demonstrate the feasibility of a binary ‘logic wire’ implemented with an array of circular nanomagnets that are clocked with voltage-induced strain applied by an underlying piezoelectric substrate. This leads to an energy-efficient logic paradigm orders of magnitude superior to existing CMOS-based logic that is scalable to dimensions substantially smaller than those for existing nanomagnetic logic approaches. The analytical approach is validated with experimental measurements conducted on dipole coupled Nickel (Ni) nanodots fabricated on a PMN-PT (Lead Magnesium Niobate-Lead Titanate) sample.

Equivalent dynamic model of DEMES rotary joint

The dielectric elastomer minimum energy structure (DEMES) can realize large angular deformations by a small voltage-induced strain of the dielectric elastomer (DE), so it is a suitable candidate to make a rotary joint for a soft robot. Dynamic analysis is necessary for some applications, but the dynamic response of DEMESs is difficult to model because of the complicated morphology and viscoelasticity of the DE film. In this paper, a method composed of theoretical analysis and experimental measurement is presented to model the dynamic response of a DEMES rotary joint under an alternating voltage. Based on measurements of equivalent driving force and damping of the DEMES, the model can be derived. Some experiments were carried out to validate the equivalent dynamic model. The maximum angle error between model and experiment is greater than ten degrees, but it is acceptable to predict angular velocity of the DEMES, therefore, it can be applied in feedforward–feedback compound control.

Bistable dielectric elastomer minimum energy structures

Dielectric elastomer minimum energy structures (DEMES) can realize large angular deformations by small voltage-induced strains, which make them an attractive candidate for use as soft actuators. If the task only needs binary action, the bistable structure will be an efficient solution and can save energy because it requires only a very short duration of voltage to switch its state. To obtain bistable DEMES, a method to realize the two stable states of traditional DEMES is provided in this paper. Based on this, a type of symmetrical bistable DEMES is proposed, and the required actuation pulse duration is shorter than 0.1 s. When a suitable mass is attached to end of the DEMES, or two layers of dielectric elastomer are affixed to both sides of the primary frame, the DEMES can realize two stable states and can be switched by a suitable pulse duration. To calculate the required minimum pulse duration, a mathematical model is provided and validated by experiment.

Eliminating electromechanical instability in dielectric elastomers by employing pre-stretch

Electromechanical instability (EMI) is one of most common failure modes for dielectric elastomers (DEs). It has been reported that pre-stretching a DE sample can suppress EMI due to strain stiffening taking place for larger strains and a higher elastic modulus are achieved at high stretch ratios when a voltage is applied to the material. In this work, the influence of equi-biaxial stretch on DE secant modulus was studied using VHB 4910 and silicone rubber (SR) composites containing barium titanate (BaTiO3, BT) particles and also dopamine coated BT (DP-BT) particles. The investigation of equi-biaxial deformation and EMI failure for VHB 4910 was undertaken by introducing a voltage-stretch function. The results showed that EMI was suppressed by equi-biaxial pre-stretch for all the DEs fabricated and tested. The stiffening properties of the DE materials were also studied with respect to the secant modulus. Furthermore, a voltage-induced strain of above 200% was achieved for the polyacrylate film by applying a pre-stretch ratio of 2.0 without EMI occurring. However, a maximum voltage-induced strain in the polyacrylate film of 78% was obtained by the SR/20 wt% DP-BT composite for a lower applied pre-stretch ratio of 1.6 and again EMI was eliminated.