Voltage Characteristics Of Heterostructures Research Articles

Influence of dislocation structure on electrical and spectroscopic properties of MoOx/p-CdTe/MoOx heterostructures

The defective structure of p-CdTe:Cl single crystals and MoOx/p-CdTe/MoOx heterostructures were investigated by high-resolution X-wave diffractometry methods. Different models of dislocation systems were used and the dislocation densities were estimated from the Williamson-Hall plot. It is noted that significant deformations of the mismatch in the transition layer negatively affect the current–voltage characteristics of heterostructures.

Impact of the Percolation Effect on the Temperature Dependences of the Capacitance–Voltage Characteristics of Heterostructures Based on Composite Layers of Silicon and Gold Nanoparticles

The temperature dependences of the capacitance–voltage characteristics and deep-level spectra of a Au–n-Si:Au–Si–p-Si heterostructure based on a composite layer of Au and Si nanoparticles are investigated. The structure manifests the properties of a transistor connected to a circuit with a common emitter with a disconnected base and an emitter Schottky barrier between the Au point contact and the n–(Si:Au) layer. Nanoparticles in this layer form finite clusters with hopping conductivity; herewith, charge accumulation is observed in the region of the Au point contact. The system at a measurement temperature below 180 K transitions from the finite-cluster phase to the infinite-cluster phase due to the percolation effect. This phase manifests metallic properties in the lateral plane of the heterostructure, which transforms into a p–n diode.

RESEARCH OF THE DEPENDENCE OF CURRENT-VOLTAGE CHARACTERISTICS OF p-Si-n-(Si2)1 - x - y(Ge2)x(ZnSe)y-STRUCTURES ON TEMPERATURE

The possibility of growing of the solid solution (Si2)1 - x - y (Ge2)x (ZnSe)y on silicon substrates by liquid-phase epitaxy from the tin solution - melt has been shown. The current - voltage characteristics of heterostructures at room temperature has three sections: ohmic section - I ~ V , exponential one - I ~ exp ( qV / ckT ), and the third one with cubic dependence - I ~ V3 that at increasingtemperature is replaced by the weaker dependences - I ~ V2,8, I ~ V2,5 and I ~ V2,3 at temperatures of 360, 390 and 420 K, respectively. The experimental results are explained on the basis of theoretical ideas about the complex nature of the recombination processesin these materials.