VCSEL Reliability Research Articles

Synergistic effect of proton irradiation and electrical stress on high-speed 850 nm vertical-cavity surface-emitting lasers

The synergistic effect significantly impact VCSEL's reliability for potential applications in spatial data communication. The synergistic effect of 3 MeV proton irradiation and electrical stress on 850 nm high-speed VCSELs is investigated. The degradation of VCSEL slow down under the influence of bias current. However, device degradation is more pronounced during irradiation under high bias current density. Low frequency noise (LFN) analysis results indicate that defects induced by proton irradiation are the primary cause of the optical-electrical parameter degradation in the device. The bias current density significantly influences the final defect yield, leading to variations in the degree of degradation after irradiation at different bias currents. At a bias current density of 6.03 × 105 A/m2, the degradation of the modulation bandwidth is reduced in comparison to the unbiased state. A mechanism investigation into the synergistic effect of proton irradiation and electrical stress on VCSELs lends support for accurately evaluating the radiation hardness of optical communication system composed of VCSELs in harsh radiation environments.

Degradation Behavior of 850 nm AlGaAs/GaAs Oxide VCSELs Suffered from Electrostatic Discharge

AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Abstract The effect of forward and reverse electrostatic discharge (ESD) on the electro-optical characteristics of oxide vertical-cavity surface-emitting lasers is investigated using a human body model for the purpose of understanding degradation behavior. Forward ESD-induced degradation is complicated, showing three degradation phases depending on ESD voltage, while reverse ESD-induced degradation is relatively simple, exhibiting two phases of degradation divided by a sudden distinctive change in electro-optical characteristics. We demonstrate that the increase in the threshold current is mainly due to the increase in leakage current, nonradiative recombination current, and optical loss. The decrease in the slope efficiency is mainly due to the increase in optical loss. References 1H. Mizuno et al., “Replicated Polymeric Optical Waveguide Devices with Large Core Connectable on Plastic Optical Fiber Using Thermo-plastic and Thermo-curable Resins,” J. Lightwave Technol., Vol. 24, no. 2, Feb. 2006, pp. 919– 926. 2Å. Haglund et al., “Comparative Study of the High-Speed Digital Modulation Performance of Single- and Multi-mode Oxide Confined VCSELs for Free Space Optical Interconnects,” Proc. SPIE, Vol. 4649, 2002, pp. 272– 280. 3M. Gruber, R. Kerssenfischer, and J. Jahns, “Planar-Integrated Free-Space Optical Fan-Out Module for MT-Connected Fiber Ribbons,” J. Lightwave Technol., Vol. 22, no. 9, Sept. 2004, pp. 2218– 2222. 4A. Chow et al., “Smart Optical Sensors for Industrial and Consumer Applications,” Proc. ESTC, Sept. 2006, pp. 101– 106. 5L.F. DeChiaro and C.J. Sandroff, “Improvement in Electrostatic Discharge Performance of InGaAsP Semiconductor Lasers by Facet Passivation,” IEEE Trans. Electron Device, Vol. 39, no. 3, Mar. 1992, pp. 561– 565 6J. Jeong, K.H. Park, and H.M. Park, “Wavelength Shifts of 1.5-mm DFB Lasers Due to Human-Body-Model Electronic Discharge Followed by Accelerated Aging Experiments,” J. Lightwave Technol., Vol. 13, no. 2, Feb. 1995, pp. 186– 190. 7H. Ichikawa et al., “Analysis on ESD-Induced Degradation of GaInAsP LD,” SEI Technical Review, no. 64, Apr. 2007, pp. 9– 14. 8J.-S. Huang, T. Olson, and E. Isip, “Human-Body-Model Electrostatic Discharge and Electrical-Overstress Studies of Buried-Heterostructure Semiconductor Lasers,” IEEE Trans. Device and Mater. Rel., Vol. 7, no. 3, Sept. 2007, pp. 453– 461. 9B. M. Hawkins et al., “Reliability of Various Size Oxide Aperture VCSELs,” Proc. ECTC, May 2002, pp. 540– 550. 10S.A. McHugo et al., “Characterization of Failure Mechanisms for Oxide VCSELs,” Proc. SPIE, Vol. 4994, 2003, pp. 55– 66. 11”Sensitivity Testing, Human Body Model, Component Level,” ESD Association, Rome, ESD STM5.1, 2001. 12D. Mathes et al., “AOC Moving Forward: The Impact of Materials Behavior,” Proc. SPIE, Vol. 4994, 2003, pp. 162– 172. 13J. Krueger et al., “Studies of ESD-Related Failure Patterns of Agilent Oxide VCSELs,” Proc. SPIE, Vol. 4994, 2003, pp. 162– 172. 14C. Helms et al., “Reliability of Oxide VCSELs at Emcore,” Proc. SPIE, Vol. 5364, 2004, pp. 183– 189. 15H.C. Neitzert, A. Piccirillo, and B. Gobbi, “Sensitivity of Proton Implanted VCSELs to Electrostatic Discharge Pulses,” IEEE J. Quantum Electron., Vol. 7, no. 2, Mar. 2001, pp. 231– 241. 16P.D. Wright, “Electrical Derivative Characteristics of InGaAsP Buried Heterostructure Lasers,” J. Appl. Phys., Vol. 61, Mar. 1987, pp. 1720– 1724. 17A. Ramaswamy et al., “Electrical Characteristics of Proton-Implanted Vertical-Cavity Surface-Emitting Lasers,” IEEE J. Quantum Electron., Vol. 34, no. 11, Nov. 1998, pp. 2233– 2240. 18P.A. Barnes and T.L. Paoli, “Derivative Measurements of the Current-Voltage Characteristics of Double-Heterostructure Injection Lasers,” J. Quantum Electron., Vol. QE-12, Oct. 1976, pp. 633– 639. 19W.B. Joyce and R.W. Dixon, “Electrical Characterization of Heterostructure Laser,” J. Appl. Phys., Vol. 49, July 1978, pp. 3719– 3728. Citing Literature Volume30, Issue6December 2008Pages 833-843 ReferencesRelatedInformation