We study the magnetoresistance (MR) and spin transport in a graphene-based ferromagnetic/ferromagnetic barrier/s-wave superconductor (FFBS) junction for two regimes including retro-Andreev reflection (AR) (EF = 100Δ0) and retroreflection crossing over to specular Andreev reflection (EF = Δ0). We observed that the variation of exchange energy in the ferromagnetic region h1 has a stronger effect on the amplitude of the MR oscillations rather than length, exchange energy, and effective gate potential in the FB region in both regimes. In the EF = 100Δ0 regime, the higher values of exchange energy h1 approach EF, which decrease the amplitude of the MR oscillations with respect to FB length. By increasing the exchange energy up to h1 > EF, a phase shift occurs for the peaks of the MR curves and the amplitude of the MR oscillations reaches its maximum value at the exchange energy hc = 2EF + U0. Furthermore, in the EF = Δ0 regime, at the exchange energy h1 = eV, the amplitude of the MR oscillations approaches its maximum value. At this value of energy of carriers eV + h1 − EF (Dirac point), the sign of the energy will be reversed and a transition from the retroreflection to the specular Andreev reflection occurs. Thus, in this regime (EF = Δ0), by observing the maximum of the MR at specified values of eV and h1, we can measure the Fermi energy of the graphene. While in the EF = 100Δ0 regime, the MR versus bias energy can be tuned from the positive to negative values by varying h1, but in the EF = Δ0 regime, the MR shows only the positive values. In addition, we have investigated the spin conductance in both regimes.