Van Der Pauw Technique Research Articles

Precise determination of electric field applied to charged materials in liquid via van der Pauw technique

The electric field is a fundamental physical quantity that determines the characteristics or behavior of charged materials in liquids. The precise characterization of charged materials involving nanoparticles or biomaterials such as cells and extracellular vesicles (EVs) requires a rigorous calculation of the electric field applied to these materials. However, unlike solid-state materials, the precise measurement of the electric field applied in liquids is challenging because of liquid-electrode interface resistance and non-uniform electric-field regions near electrodes. This study proposes a method for determining the precise electric field in liquids using the van der Pauw measurement technique. The conductivity of the liquid was measured using a microfluidic channel with a van der Pauw configuration. The electric field in the liquid was then calculated based on the relationship between the conductivity and current density. The accuracy of the proposed method was verified by measuring the conductivity of standard solutions and phosphate-buffered saline (PBS), followed by determining the electric field applied to the nanoparticles in these solutions. In addition, the proposed method was used to determine the zeta potential of charged nanoparticles. This simple method for determining liquid conductivity and calculating electric fields in liquids could be effectively used for various electrochemical studies.

(Invited) Preparation of N-Type and P-Type Doped Single Crystal Diamonds with Laser-Induced Doping and Microwave Plasma Chemical Vapor Deposition

In this study, n-type doped single crystal diamonds were successfully prepared under normal temperature and pressure conditions using laser-induced doping. 248nm pulsed laser beams with nanosecond duration were irradiated on the single crystal diamond substrate immersing in an 85% phosphoric acid solution and it introduced phosphorus doping to form an n-type doped thin layer. The resistivity of the doped region significantly decreased compared to that of the single crystal diamond. After depositing a titanium electrode, the resistivity of the doped film obtained by Van der Pauw Technique was determined to be 1.3×10-6 Ω·m. Raman spectroscopy confirmed the absence of carbon or graphite phases in the laser-induced doped diamond, indicating that the enhanced conductivity was due to phosphorus incorporation.Furthermore, p-type doped single crystal diamonds were successfully prepared by introducing boron during the growth process using Microwave Plasma Chemical Vapor Deposition（MPCVD）. It was demonstrated that the proposed technique can introduce impurities into single crystal diamonds to form doped conductive thin layers, which has potential applications in the field of microdevices and integrated circuits.

(Invited) Preparation of N-Type and P-Type Doped Single Crystal Diamonds with Laser-Induced Doping and Microwave Plasma Chemical Vapor Deposition

In this study, n-type doped single-crystal diamonds were successfully prepared under normal temperature and pressure conditions using laser-induced doping. 248nm pulsed laser beams with nanosecond duration were irradiated on the single crystal diamond substrate immersing in an 85% phosphoric acid solution and it introduced phosphorus doping to form an n-type doped thin layer. The resistivity of the doped region significantly decreased compared to that of the single-crystal diamond. After depositing a titanium electrode, the resistivity of the doped film obtained by Van der Pauw Technique was determined to be 1.5×10-4 Ω·cm. Furthermore, p-type doped single-crystal diamonds were successfully prepared by introducing boron during the growth process using Microwave Plasma Chemical Vapor Deposition（MPCVD）. It was demonstrated that the proposed technique can introduce impurities into single crystal diamonds to form doped conductive thin layers.

Influence of Bulk Defect Density on the Efficiency of CIGS Based Photovoltaic Cell/Solar Cell

In CIGS-based thin-films, bulk defects are believed to represent disturbances either in a regular, periodical arrangement within the atoms or within the crystalline media which influence sheet resistivity. In this study, first a resistivity measurements were carried out on CIGS thin films using the Van Der Pauw technique. Then, a comparison between two Van Der Pauw four-point measurement configurations (aligned and square) were done which showed that the square configuration was the most appropriate configuration that can be recommended to measure thin film sheet resistance of CIGS films. Finally, a numerical simulation using SCAPS-1D software was used to study the influence of bulk defect density in a CIGS films as an absorber layer in a model photocell. Using the simulated data, three operating zones for the model photocell were identified depending based on the concentration of its bulk defect density. The influence of bulk defects on thickness, band gap and doping were then analyzed. It was revealed that when the bulk defect density was less than 5×1013 cm-3 for an absorber of thickness in the order of over 3 μm, a band gap between 1.3 eV-1.4 eV and acceptor density of 1016 cm-3were the optimal operating conditions for the model photocell. It was concluded that the CICS layer used as an absorber can be improved if its bulk defect density is tuned to optimal levels.

Simultaneous dual-configuration van der Pauw measurements of gated graphene devices

The van der Pauw technique is the gold standard for measuring the sheet resistance of thin conductors by relying on the combination of two 4-point resistance measurements obtained in different current–voltage probe configurations. The presence of hysteresis and/or time-dependent effects will result in the van der Pauw technique producing inaccurate and misleading results. This limitation can be overcome by simultaneously measuring the two 4-point resistances at different frequencies with two lock-in amplifiers. In this work, we discuss in detail the fundamental requirements and practical considerations for the proper implementation of this measurement technique. Furthermore, we show that the relative deviation between sequential and simultaneous measurements is below 1% in the region of interest for a graphene-based field-effect transistor and 0.04% on average for resistive test structures. The simultaneous van der Pauw technique could therefore become a new standard for reliably assessing the electrical properties of 2D materials and devices.

Fabrication and characterization of TiO2: ZnO thin films as electron transport material in perovskite solar cell (PSC)

In developing quicker, smaller, and more efficient optoelectronic devices, composite thin films are becoming progressively crucial. One reason for using composite thin films is to improve materials optical and electrical properties. Thermal Evaporation is a type of physical vapor deposition that can produce thin films with well-controlled nanostructures that are pure, homogeneous, and conformal. The prime focus of this study was to fabricate TiO2 and composite TiO2:ZnO thin films on ITO-coated glass substrates by thermal Evaporation. The goal of this study was to investigate the optical, structural, and electrical properties of deposited thin films. The optical properties were assessed using UV–Vis and Photoluminescence spectroscopy, and FTIR spectroscopy was used to identify the fingerprint of materials. The crystal structure of deposited thin films was investigated using X-ray diffraction. The changes in morphology induced by adding ZnO content to TiO2 were examined using optical microscopy. SEM investigation corroborated the granular-like structure of thin films, whereas EDX demonstrated the doping and composition of ZnO concentration in TiO2. The electrical measurements were performed using the Van der Pauw technique. Adding ZnO into TiO2 improved transmission, photoconductivity, and optical bandgap to generate a viable electron transport material (ETM) for efficient perovskite solar cells (PSC). XRD results revealed the grain size increase after adding ZnO into TiO2. The transmission was increased to 95%, while the bandgap was decreased from 3.8 eV to 3.68 eV. It was also revealed that after integrating ZnO into TiO2, the generated thin films have stronger visible photoluminescence peaks, and the material's conductivity has been improved. The results indicate that TiO2:ZnO could be employed as an ETM in PSC to improve productivity.

CVD Grown Tungsten Oxide for Low Temperature Hydrogen Sensing: Tuning Surface Characteristics via Materials Processing for Sensing Applications.

The intrinsic properties of semiconducting oxides having nanostructured morphology are highly appealing for gas sensing. In this study, the fabrication of nanostructured WO3 thin films with promising surface characteristics for hydrogen (H2 ) gas sensing applications is accomplished. This is enabled by developing a chemical vapor deposition (CVD) process employing a new and volatile tungsten precursor bis(diisopropylamido)-bis(tert-butylimido)-tungsten(VI), [W(Nt Bu)2 (Ni Pr2 )2 ]. The as-grown nanostructured WO3 layers are thoroughly analyzed. Particular attention is paid to stoichiometry, surface characteristics, and morphology, all of which strongly influence the gas-sensing potential of WO3 . Synchrotron-based ultraviolet photoelectron spectroscopy (UPS), X-ray photoelectron spectroscopy (XPS), X-ray photoelectron emission microscopy (XPEEM), low-energy electron microscopy (LEEM) and 4-point van der Pauw (vdP) technique made it possible to analyze the surface chemistry and structural uniformity with a spatially resolved insight into the chemical, electronic and electrical properties. The WO3 layer is employed as a hydrogen (H2 ) sensor within interdigitated mini-mobile sensor architecture capable of working using a standard computer's 5 V 1-wirebus connection. The sensor shows remarkable sensitivity toward H2 . The high, robust, and repeatable sensor response (S) is attributed to the homogenous distribution of the W5+ oxidation state and associated oxygen vacancies, as shown by synchrotron-based UPS, XPS, and XPEEM analysis.

Simple Approach to the Fabrication of Lanthanum Orthoniobates and Nanocomposites with Ni, Cu, and Co Metal Nanoparticles Using Supercritical Isopropanol

Orthoniobates of rare-earth elements are a promising group of materials attractive for the design of nanocomposite hydrogen separation membranes owing to a perspective type of proton conductivity, good mechanical properties, and high stability in H2O- and CO2-containing atmospheres. In general, the promising method involves the synthesis of nanocomposites with transition metals (Cu, Ni, and Cu-Ni alloys) and their oxides with high electronic conductivity. For the first time, lanthanum orthoniobates and nanocomposites with NiCu and NiCo nanoparticles were synthesized using alcohol solutions of salts of the corresponding metals by the solvothermal method in a flow reactor in a supercritical isopropanol medium. This method made it possible to obtain single-phase La0.99Ca0.01NbO4–δ oxide. The introduction of doping titanium cations did not allow obtaining a single-phase La0.99Ca0.01Nb0.98Ti0.02O4–δ sample, as impurities in lanthanum methaniobate and La2Ti2O7 were found. Calcined powders and gastight pellets of orthoniobates and nanocomposites were characterized by X-ray diffraction analysis as well as scanning and transmission electron microscopy. Transport characteristics were investigated by the Van der Pauw technique, varying measurement temperatures in a wet H2 atmosphere. The oxygen mobility was estimated by the oxygen isotope heteroexchange with C18O2.

Electrical Resistivity of Fe and Fe‐3 wt%P at 5 GPa With Implications for the Moon's Core Conductivity and Dynamo

AbstractA high‐magnetic field once existed in the early history of the Moon, suggesting the core once possessed a thermally driven dynamo. The thermal conductivity of core materials is a significant parameter of the dynamo. The lunar core composition is thought to be iron or iron‐alloyed with some light elements (e.g., S, P, Si, and C), but its transport properties remain uncertain. We measured the electrical resistivity of iron and Fe‐3 wt%P alloys at 5 GPa and high temperatures. Apart from the quasi four‐point technique, the four‐probe van der Pauw technique was also employed to measure the resistivity of pure iron. Adding ∼3 wt% phosphorus to iron slightly increases the resistivity at 5 GPa and 1000–1500 K due to the impurity effect. The resistivity of Fe‐3 wt%P alloys increases at the onset of melting. Via the Wiedemann‐Franz law, the thermal conductivity at the lunar core‐mantle boundary (CMB) is estimated to be 28.6–34.2 Wm−1K−1 for a light‐element free core and 31.5 ± 1.9 Wm−1K−1 for a phosphorus‐bearing (∼3 wt% P) core. Therefore, small amounts of phosphorus in the lunar core slightly impact its thermal conductivity. The estimated conductive heat flow across the lunar CMB varies from 4.5 to 5.7 GW, and the adiabatic heat flux varies from 3.3 to 4.2 mW/m2, depending on the core's composition (Fe or Fe‐3 wt%P). Integrating our results with previous lunar core evolution models, we suggest that a thermally driven dynamo persisted until 3.63–3.88 Ga ago.

Investigation of electronic transport in InAs/GaAs samples. A study using the metaheuristic self-adaptive differential evolution method

This manuscript presents the study of electronic transport on a set of five multilayer molecular beam epitaxy-grown InAs/GaAs semiconductor samples. We developed an automated switch system to carry out electronic transport measurements of mobility and carrier concentration using the van der Pauw technique. Measurements were carried out as a function of temperature within the range of 260 K to 310 K. To identify which scattering mechanisms most contributed to mobility limitation, It was necessary to use the Self-adaptive Differential Evolution meta-heuristic method. This method allowed the determination of the main scattering mechanisms limiting the electronic mobility and identified as scattering by dislocations and phonons. Dislocations consist of the dominant defects in this lattice mismatch structure. Therefore, to increase carrier mobility, we propose some strategies: a change in the sample growth parameters such as substrate temperature and InAs/GaAs layer thickness. Alternatively, annealing of the samples could also be considered to improve sample mobility.

Evaluation of SnS:Cu Thin Film Properties Obtained by USP Technique to Implement It as an Absorbent Layer in Solar Cells Using SCAPS

Tin sulfide doped with copper (SnS:Cu) thin films were deposited on glass substrates by the ultrasonic spray pyrolysis (USP) technique at different concentration ratios (y = [Cu]/[Sn] = 0% (undoped), 2%, 5% and 10%). The aim of this work is to analyze the effect of copper on structural, morphological, and optoelectronic properties of SnS:Cu and discuss their possible application as an absorber layer in a solar cell structure proposed which is simulated using SCAPS software. X-ray diffraction (XRD) reveals an orthorhombic structure in the undoped sample and a cubic structure in doped ones. Raman spectroscopy suggests a possible unit cell size change due to the addition of Cu. Scanning electron microscopy (SEM) shows growth in grain density with an increasing y. Image analysis based on second-order features was used to discuss grain distribution. UV-VIS spectroscopy helps to find an increase of bandgap for the doped samples when copper concentration increases, going from 1.82 eV in the doped film y = 2% to 2.2 eV in the 10% doped samples. A value of 3.51 eV was found for the undoped sample y = 0%. A rise in both carrier concentration and mobility but a decrease in resistivity when y is increased was observed through the Hall–Van der Pauw technique. Simulations by SCAPS helped conclude that considering the material thickness, the SnS:Cu compound can be an alternative for implementation in the manufacturing of solar cells as an absorber layer since it is possible to obtain the optoelectronic properties necessary using the UPS economical technique.

Microstructural analysis and electrical behaviours of co-sputtered W–Ag thin films with a tilted columnar architecture

W–Ag thin films are produced by magnetron co-sputtering technique using glancing angle co-deposition configuration. Different samples are prepared with similar conditions (same pressure, thickness and tungsten target current) but with a variable Ag target current changing from 0 to 80 mA. The effect of the Ag target current on the film structure and electrical properties is investigated using scanning and transmission electron microscopy, energy-dispersive x-ray spectroscopy, x-ray diffraction and van der Pauw technique. Thin films with inclined columns are obtained and the columns section becomes more anisotropic for the films prepared with the lowest Ag target currents. The elemental composition of the films also changes as a function of the Ag target current, varying from tungsten-rich (at low current) to homogeneous (at high current). W–Ag thin films exhibit different crystallographic structures. If the fcc Ag phase is always present, the metastable A15 β-W is pointed out only at low Ag target current while at high current, only the bcc α-W phase is present. The microstructural analysis shows that the core of the columns is formed by W while Ag covers the columns as grains. Room temperature electrical resistivity decreases with Ag target current, whereas its anisotropy decreases. This behaviour correlates with the change in the columnar cross-section morphology.

Free carrier density enhancement of 4H-SiC Si-face MOSFET by Ba diffusion process and NO passivation

Field effect mobility was improved in a 4H-SiC (0001) metal-oxide-semiconductor field-effect transistor with Ba diffusion into the gate oxide and NO passivation. The Ba diffusion process caused Ba interface passivation, which suppressed oxide surface roughening. Free carrier mobility and free carrier density were evaluated through Hall effect measurements using the Van der Pauw technique at room temperature. Passivation by Ba or NO was found to have no effect on free carrier mobility but contributed to increased free carrier density. A free carrier ratio of up to 70% was achieved through combined Ba diffusion and NO passivation.

Development of Polycrystalline Diamond Compatible with the Latest N-Polar GaN mm-Wave Technology

Integration of diamond on GaN can ease the challenges associated with thermal management of GaN-based power amplifiers which need to base on highly scaled transistors to push toward higher frequencies at high powers for 5G networks. The integration of diamond was achieved by growing polycrystalline (PC) diamond on nitrogen-polar GaN. A standard 5 nm Si3N4 layer which forms the gate dielectric was used as an interlayer between diamond and the GaN channel for etching protection. Since diamond growth conditions involve high temperature and H2 plasma, it can easily decompose the underlying dielectric as well as the GaN channel and degrade the channel conductivity and hence the device performance. Due to the incompatibility of conventional growth recipes with thin dielectrics (<5 nm), a novel two-stage-three-step growth recipe was designed for PC diamond integration on top of nitrogen-polar GaN high-electron-mobility transistors in a H2/CH4-plasma environment. Using only H2 and CH4 in the chamber guarantees a higher-phase-purity diamond than chambers with added argon or nitrogen for lower substrate etching. This recipe maintains the performance of the two-dimensional-electron gas and provides a less columnar diamond structure with a larger grain size. Our observations were supported by scanning transmission electron microscopy and Hall mobility measurements using the van der Pauw technique before and after diamond growth. A mobility of ∼1250 cm2/V s, a sheet carrier concentration of ∼1.30 × 1013 cm–2, and a sheet resistivity of ∼380 Ω/□ were maintained after the growth of diamond. The anisotropy ratio has been decreased from 3.75 to 1.12 with this growth recipe. Using long channel devices, we measured the difference in the channel temperature, which decreased by more than 100 °C in the range of 10–24 W/mm power after the integration of the diamond on top of the device.

Cobalt metal doped magnesium ferrite and zinc ferrite thin films grown by Spray Pyrolysis

The transition metal doped magnesium ferrite and zinc ferrite as the most common form of iron oxide become an especially important photoanode material for photoelectrochemical water splitting, due to its comparatively small band gap (Eg = 2.0 eV) that can absorb visible light and its perfect chemical stability in watery solutions. Spinel ferrites have the general formula of AFe2O4 (where A2+:Fe, Co, Ni, Zn, etc.). Thin films were synthesized on different substrates by Spray Pyrolysis (SP) technique. The technique of SP is easier, cheaper and faster than other method. Spinel ferrites, AFe2O4, are technologically important group of materials due to their optical, magnetic, and electrical properties. Among the different spinel ferrites, magnesium ferrite have unique properties. The effects of doped cobalt metal on the thin films were analyzed through Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM), X-ray Diffraction (XRD) and UV–Vis double beam spectrophotometer and for electrical properties of films were used Van der Pauw technique.

Physical and electrochemical appraisal of cotton textile modified with polypyrrole and graphene/reduced graphene oxide for flexible electrode

The aim of this study was to prepare a flexible fabric electrode for electronic devices. Cotton fabric (CT) was used as the substrate for coating graphene oxide (GO) and reduced graphene oxide (RGO) as electroactive materials, then subjected to the chemical polymerization of polypyrrole (PPy) . The sheet resistances and surface morphologies of the as-prepared composite textiles were evaluated by means of using van der Pauw technique and FESEM, respectively. XPS results showed a reduction of around 17% in the ratio of O/C in RGO/CT in comparison with the GO/CT, which could be related to the reduction of GO to RGO. The PPy/RGO/CT composite fabric exhibited sheet resistance of 7.5 Ω/sq, whereas PPy/GO/CT samples presented a sheet resistance of 308.3 Ω/sq. Charge-transfer resistance of PPy/GO/CT was 10 times of PPy/RGO/CT, which showed the insulating role of GO in this composite. Therefore, PPy/RGO/CT can hold a significant promise in flexible electrode applications.

Approaches to Measure the Resistivity of Grain Boundaries in Metals with High Sensitivity and Spatial Resolution: A Case Study Employing Cu.

It is well-known that grain boundaries (GBs) increase the electrical resistivity of metals due to their enhanced electron scattering. The resistivity values of GBs are determined by their atomic structure; therefore, assessing the local resistivity of GBs is highly significant for understanding structure–property relationships. So far, the local electrical characterization of an individual GB has not received much attention, mainly due to the limited accuracy of the applied techniques, which were not sensitive enough to detect the subtle differences in electrical resistivity values of highly symmetric GBs. Here, we introduce a detailed methodology to probe in situ or ex situ the local resistivity of individual GBs in Cu, a metallic model system we choose due to its low resistance. Both bulk Cu samples and thin films are investigated, and different approaches to obtain reliable and accurate resistivity measurements are described, involving the van der Pauw technique for macroscopic measurements as well as two different four-point-probe techniques for local in situ measurements performed inside a scanning electron microscope. The in situ contacts are realized with needles accurately positioned by piezodriven micromanipulators. Resistivity results obtained on coincidence site lattice GBs (incoherent Σ3 and asymmetric Σ5) are reported and discussed. In addition, the key experimental details as well as pitfalls in the measurement of individual GB resistivity are addressed.

Characterization of spray deposited ternary ZnSxSe(1-x) thin films for solar cell buffers

This paper reports on cadmium free, environment friendly, industrially beneficial, chemically sprayed ZnSxSe(1-x) (ZSS) thin films with tunable band gap which is suitable for various optoelectronic applications including buffer layer in solar cells. Chemically sprayed ZSS thin films with x ranging from 0 to 1 were studied extensively by adopting the characterization techniques like X-ray diffractometry (XRD), Scanning electron microscopy with energy dispersive spectroscopy (SEM-EDAX), Ultraviolet – visible (UV–VIS), Photoluminescence (PL) and Raman spectroscopies in order to assess the suitability of the formed thin film for the buffer layer applications. XRD analysis was done to determine various parameters like lattice constant, crystallite size, strain and dislocation density. From lattice constant, Vegard's law was also verified and compared the composition estimation with EDAX data. Refractive index was compared using Vandemme model with the values obtained using reflectance data. Photoluminescence and Raman spectra were analyzed to get an insight on structural defects, which have major role in deciding the electrical properties. Electrical properties were assessed by estimating carrier concentration, carrier mobility and electrical resistivity by adopting Van der Pauw technique. Based on structural, optical and electrical properties, sample with x = 0.4 is suggested for the buffer layer application in CIGS based solar cells, which produces minimum lattice mismatch with considerably high optical transmittance and electrical conductance.

Synthesis and Characterization of Monoclinic Gallium Oxide Nanomaterials for High-Concentration Ethanol Vapor Detection

This study was conducted to synthesize Gallium Oxide nanomaterials from its bulk form using a low-cost and repeatable method and investigate on its potential as sensing element for Ethanol (EtOH). Horizontal Vapor Phase Growth (HVPG) Technique was utilized to synthesize monoclinic Gallium Oxide (β-Ga2O3) nanowires. Images obtained from the Scanning Electron Microscope showed high density nanowires specifically in the area of highest temperature gradient. SEM also showed that the grown structures using HVPG Technique were at the nanoscale with diameters ranging from 51.60 to 908.38 nm. Higher surface-to-volume ratio was also noted in the area of highest temperature gradient which was subjected to an applied magnetics field. The Gallium to Oxygen ratio was verified via EDX to be approximately 2:3 which agrees with the atomic ratio of Ga2O3. The monoclinic structure of the grown nanomaterials was investigated using Raman Spectroscopy. Raman peaks of the samples were at 199 and 486 cm−1 which was accounted to the presence of two Raman-active modes of the b-polymorph of Ga2O3. The Raman spectrum of the grown nanowires confirmed that the material is monoclinic in structure and belongs to C2/m space group. The I-V Curve of the grown nanowires were also determined using two-point probe which illustrates a non-linear curve similar to that of a semiconductor material. Furthermore, additional fundamental properties such as resistivity and specific conductance of the materials were also determined via van der Pauw Technique. Results showed that the material has high specific conductance and low resistivity. The synthesized nanomaterial was responsive to Ethanol vapor. Exposure to the said compound increased its resistance. Graphs showed that there is a significant increase in the resistance after exposure to ethanol vapor.

Synthesis and Characterization of Gallium Oxide/Tin Oxide Nanostructures via Horizontal Vapor Phase Growth Technique for Potential Power Electronics Application

The monoclinic β‐gallium oxide (Ga2O3) was viewed as a potential candidate for power electronics due to its excellent material properties. However, its undoped form makes it highly resistive. The Ga2O3/SnO2 nanostructures were synthesized effectively via the horizontal vapor phase growth (HVPG) technique without the use of a magnetic field. Different concentrations of Ga2O3 and SnO2 were varied to analyze and describe the surface morphology and elemental composition of the samples using the scanning electron microscopy (SEM) and energy‐dispersive X‐ray (EDX) spectroscopy, respectively. Meanwhile, the polytype of the Ga2O3 was confirmed through the Fourier transform infrared (FTIR) spectroscopy. The current‐voltage (I–V) characteristics were established using a Keithley 2450 source meter. The resistivity was determined using the van der Pauw technique. The mobility and carrier concentration was done through the Hall effect measurements at room temperature using a 0.30‐Tesla magnet. It was observed that there was an increase in the size of the nanostructures, and more globules appeared after the concentration of SnO2 was increased. It was proven that the drop in the resistivity of Ga2O3 was due to the presence of SnO2. The data gathered were supported by the Raman peak located at 662 cm−1, attributed to the high conductivity of β‐Ga2O3. However, the ε‐polytype was verified to appear as a result of adding SnO2. All the samples were considered as n‐type semiconductors. High mobility, low power loss, and low specific on‐resistance were attained by the highest concentration of SnO2. Hence, it was clinched as the optimal n‐type Ga2O3/SnO2 concentration and recommended to be a potential substrate for power electronics application.