Thin amorphous films of Ge5As22Te73–xInx (where x = 0, 3, 6 and 9 at. %) were thermally evaporated on glass substrates. The Seebeck coefficient (S) or simply thermoelectric power, dc electrical conductivity (σd), and photoconductivity (σph) were measured within the temperature (T) range 300–420 K on the prepared thin films. The activation energies for dark conduction (∆Ed), thermoelectric (∆ES) and photoconduction (∆Eph) were estimated using the values of σd, S, and σph, respectively. The current density (J) is found to be directly proportional to applied electric field (E) for the thin films indicating Ohmic behavior for E < 105 V/m. The positive values for S indicate that the semiconductor Ge5As22Te73–xInx thin films are of p-type in the whole studied temperature range. It was found that σd and σph increase, whereas S decreases with increasing In content. The energy gap (Eg) has been estimated from the spectral distribution of the dc-photoconductivity. The peak of photocurrent moves to lower spectrum energy when increasing In content from 0 to 9 at%. corresponding to a decrease in Eg from 1.1 to 0.9 eV. The dark conductivity pre-exponential factor (σo) was estimated by the variation of σd with both T and S.