Value Of Shunt Resistance Research Articles

Effect of 1 wt% Dimethyl Sulfoxide on the Electrical and Photovoltaic Parameters of Schottky Diodes and Organic Solar Cells Based on PEDOT:PSS

Herein, the electrical conductivity of poly(3,4‐ethylenedioxythiophene)–poly(styrenesulfonate) (PEDOT:PSS) polymer is improved by adding dimethyl sulfoxide (DMSO) and electrical characterization of the obtained Schottky diode and organic solar cell (OSC) devices are performed from I–V measurements under the light and dark conditions. The scanning electron microscope images of the poly(3‐hexylthiophene):[6,6]‐phenylC61‐butyric acid methylester active layer and PEDOT:PSS layer are obtained. The series resistance (Rs), barrier height (Фb), and ideality factor (n) parameters are obtained from different techniques as a function of light and dark conditions. Furthermore, photovoltaic parameters are calculated for n‐Si/PEDOT:PSS/Au device without DMSO doping and with DMSO doping as a parameter of the light condition and the interface state densities of these devices are obtained for light and dark conditions. DMSO organic solvent improves the short‐circuit current density (Isc), power convert efficiency (or η), open circuit‐voltage (Voc), shunt resistance (Rsh), and series resistance (Rs) values of OSCs. In summary, DMSO solvent rearranges the conductive of PEDOT:PSS, decreases the work function of this conductive polymer (≈5 eV), decreases energy loss in the charge transportation, and increases photovoltaic parameters of Schottky barrier diode and OSC devices.

A generalized mathematical modeling and performance analysis of GaAs, m-Si and Ge single - junction solar PV cells

Earlier theoretical approaches have analyzed the performance of semiconductor materials for the influence of temperature and band gap which is implemented in solar photovoltaic systems. This paper investigates the detailed mathematical analysis of single junction semiconductor materials such as Gallium Arsenide (GaAs), mono-crystalline Silicon (m-Si) and Germanium (Ge) solar cells parameters namely, Band gap (Eg), reverse saturation current (Io), shunt resistance (Rsh), Short circuit current (Isc), open circuit voltage (Voc), Fill factor (FF), Maximum Power (Pmax) and Efficiency (Ƞ) for temperature ranging from 273K (≈0°C) to 373K (≈100°C). The optimized cell parameters values are obtained under Air Mass 1.5 Global spectrum (Area = 100cm2 and Irradiance = 100 mW/cm2 for the semiconductor materials (GaAs, m-Si and Ge)) at 300K (≈25°C) are compared to identify the higher efficiency and open circuit voltage. Among the semiconductor materials, the single junction GaAs compound semiconductor material is identified with better efficiency and optimized open circuit voltage. A generalized mathematical model of semiconductor materials is developed using single diode equivalent circuit model under SIMULINK platform and it is used to observe the effect of different temperature, irradiance levels, series resistance and shunt resistance values on the performance of solar cells. The discussion is extended for a 2KW PV array for the semiconductor materials (GaAs, m-Si and Ge) under different temperature and irradiance levels. Evaluating the performance of a PV array, rather than individual cells, provides a more comprehensive understanding of how the chosen semiconductor materials function as part of a larger solar energy system.

A computational study for understanding the effect of various parameters on the performance of three different CI(G)Se-based thin film solar cells

The copper indium selenium/copper indium gallium selenium (CI(G)Se)-based thin film solar cells (TFSCs) have been fascinating in the photovoltaic market due to their potential to attain high efficiency of solar cells and modules at relatively little cost. This research work introduces the simulation of the CI(G)Se TFSCs through SCAPS software. Some parameters like thickness, bandgap, and carrier concentration of semiconducting materials used in the CI(G)Se TFSCs were optimized to get the solar cell efficiency as high as possible. The optimized efficiencies for CISe, CIGSe, and CIGSe bilayer TFSCs were 22.81, 27.32, and 27.99%, respectively. It is seen from the results that the device’s performance using two absorber layers in CI(G)Se TFSCs was comparatively higher than using a single absorber layer. This outcome is mainly due to the better absorption of photons in CI(G)Se TFSCs containing two absorber layers. The SCAPS software also analyzed the experimentally obtained parameters of CI(G)Se and CdS thin films and noticed more than 20% efficiency, showing potential parameters to use in commercial applications. The effect of defects found in the CI(G)Se absorber layer, CdS buffer layer, and CdS/CI(G)Se interface on the solar cell parameters are primarily studied here. It is observed that the increasing defects in the CI(G)Se TFSCs could impact negatively the device’s performance by recombining the generated charge carriers. Better results were found for CI(G)Se TFSCs at a lower work temperature (by reducing the saturation current, and at a smaller series resistance value as well as a larger shunt resistance value (by reducing the alternative paths for generated charge carriers). Therefore, understanding these results could provide complete information on the optimization process that can serve as a guide to achieve highly efficient electronic devices experimentally.

Analysis of the degradation of highefficiency encapsulated PM6:Y7based Photovoltaic Cells

In this work, we report a degradation study of high-efficiency conventional polymer solar cells (PSCs). The high performance of the PM6:Y7-based device is achieved with a power conversion efficiency (PCE) of up to 15.64% in the first measurement. The article describes the results of the measurements and analysis of the degradation process. The electrical parameters during the degradation process were extracted from the current density – voltage characteristics curves (J–V) under light and dark conditions. Were observed the specific parameters of the selected cells: open-circuit voltage (VOC), short circuit current density (JSC), fill factor (FF), PCE, series (RS), and shunt (RSH) resistance values The PCE of the device decreased down to 64% of the initial PCE after 1056 h.

Increasing the efficiency of perovskite solar cells using Cs4CuSb2Cl12 quantum dots as an interface layer: A numerical study

Recently, the advantages of perovskite solar cells (PSCs) and a significant increase in power conversion efficiency (PCE) have played an essential role in the preference for these materials. Although different methods are used to increase PCE and reduce losses at the interfaces in PSCs, placing a new layer between the absorber/hole transfer layer (HTL) or between the absorber/electron transfer layer (ETL) stands out as one of the most common methods. In this study, considering stability, sustainability, mobility, and non-toxicity, Cs4CuSb2Cl12 (CCSC) perovskite quantum dots (PQDs) were preferred as the interface layer between absorber and HTL in CsPbI3 and formamidinium lead iodide (FAPI)-based PSC devices. While SnO2, Cu2O, and nickel were used as ETL, HTL, and back contact, respectively, CsPbI3 and FAPI perovskites were utilized as absorber materials separately. Simulations were conducted on Solar Cell Capacitance Simulator (SCAPS-1D) software and the current density (J) and voltage characteristics were compared. By choosing different interface layer thicknesses, different radiative recombination coefficients (RRCs), and different defect sites, the cell efficiency of the PQD interlayer solar cells were simulated. Simulations were also carried out using different series resistance (Rs) and different shunt resistance (Rsh) values to show the effect of parasitic losses on cell efficiency, and it was observed that device efficiency increased where Rs was low and Rsh was high. In addition, in FAPI-based structure, with the addition of a PQD layer between the absorber and HTL, it was observed that the short circuit current density increased from 17.6 mA/cm2 to 25.67 mA/cm2, while the cell efficiency increased by 30%. Furthermore, according to the results obtained using CsPbI3 as an absorber, adding a PQD layer between CsPbI3 and HTL increased the short circuit current density from 17.8 mA/cm2 to 20.7 mA/cm2 and cell efficiency by 16%. To sum up, these simulation results demonstrate that inserting a PQD layer between the absorber and HTL significantly enhances the efficiency and charge carrier capacity of solar cells.

(Invited) Metallization: The Future of Highly Reliable Fire-through-Dielectric-Contacts to Silicon Solar Cells

The reliability of any electron device depends on the functionality of the metal contact to the semiconductor. Thus, the transport mechanism at the semiconductor/metal interface is dictated by the barrier height posed by the difference in the work function of these materials. A low barrier height is desirable to avoid the power loss in the form of heat at the interface, which often lead to delamination of the metal contacts and failure. However, it is highly improbable for the two work functions to ever match, therefore, the doping on the semiconductor is modified to reduce the barrier height. For lithography process which uses evaporated/plated metal contact, the barrier height is often reduced by heavily doping the semiconductor underneath the metal contact and treated in a reducing ambient to remove the Schottky barrier after metal contact process step. However, for the commercial silicon solar cell which relies on fire-through-dielectric-metal contacts with Ag, Ag coated Cu or Cu thick film metal pastes, there is glass at the semiconductor/metal interface, which is part of the thick film metal paste, that adds to the contact resistance. Since solar cell requires the emitter to be transparent in order to avoid the loss of photons, the metal paste must therefore be modified to reduce the barrier height to enable the field emission carrier transport at the interface. This paper will therefore focus on the efforts to understand the characteristics of thick film metal pastes that would lead to a highly reliable fire-through-dielectric-metal contacts.The thick film metal pastes for solar cell metal contacts consists three main components: (i) organics, (ii) glass frits and (iii) the metal powder. The morphology and particle size of the metal powders and glass frits are critical to the contact and gridline resistances. The viscosity and rheology of the paste among other parameters ensure the printability of continuous grid lines. The sintering of the gridline is impacted by the particle size and morphology of the metal powders and glass frits. The percentage of the glass frits determines how fast the underlying dielectric is etched during the sintering step. After the sintering, the proximity of the metal particle to the pn junction of the device dictates the quality of the formulated metal thick film paste. To understand the relationship between the thick film metal paste and the device parameters, the semiconductor/metal interface is often characterized through SEM/EDS to assess the (i) glass thickness, (ii) metal crystallites (iii) effectiveness of glass frit in etching the underlying dielectric, and (iv) the compounds formed and their distribution in the contact. All these characteristics are pertinent to the barrier height that determines the carrier transports at the metal/semiconductor interface.Thus, for a thick film metal paste to be compatible with the fire-through-dielectric contact (i) the glass frits should be able to uniformly etch the underlying dielectric, (ii) must produce a thin glass layer at the semiconductor/metal interface for low barrier height, (iii) must result in an ideality factor of close to unity for the device and (iv) high shunt resistance value. However, because of the high cost of Ag, there is an intensified effort to investigate the alternatives such as Cu and Ag coated Cu to achieve the above characteristics for cost effective metallization of solar cells. This paper will compare and contrast the emerging alternatives with the state-of-the-art Ag paste contacts.

Evaluation of the Current Shunt Influence on the Determined Wideband Accuracy of Inductive Current Transformers

This manuscript presents performed laboratory studies and the analysis of the impact of current shunt values used in the differential connection on the wideband metrological performance of inductive current transformers. Moreover, a comparison of the accuracy of wideband and 50 Hz-type inductive current transformers in the specified frequency range from 50 Hz to 5 kHz is presented. The main factor which may influence the wideband accuracy of inductive current transformers is the phenomenon of self-generation. This causes rapid changes in the accuracy, and simultaneously causes the most positive and the most negative values of current error and phase displacement. To evaluate the metrological performance in the differential measurement setup for higher harmonics of the distorted current, a digital acquisition board was used. Obtained results show that if proper values of current shunt resistance are chosen, such devices may be used to evaluate the wideband accuracy of inductive current transformers. The results indicate that the typical units designed for the transformation of sinusoidal current with a frequency of 50 Hz can achieve a comparable metrological performance to that of the wideband inductive current transformer.

Effect of Parasitic Parameters and Environmental Conditions on I-V and P-V Characteristics of 1D5P Model Solar PV Cell Using LTSPICE-IV

In this research work, the electrical simulation of 1D5P model solar cell is done using LTSpice-IV simulation software. In this work effect of environmental conditions i.e temperature, solar irradiance, and parasitic parameters i.e series as well as shunt resistances was carried out. It has been discovered that as temperature increases the performance of solar cell decrease because temperature causes to increase the recombination phenomenon and hence lower the performance. However, when the temperature rises from 00C to 500C, the I-V and P-V curves move to the origin showing the negative effect of increasing temperature on the solar cell. Solar irradiance has major role on the performance of solar cell. As solar irradiance increases from 250 Wm-2 to 1000 Wm-2, the performance of solar cell increases accordingly and I-V as well as P-V curve moves away from the origin. It is concluded that for different series resistances, I-V along with P-V characteristic of 1D5P model solar cell varies, as at 0.02Ω series resistance, a maximum short circuit current and maximum power is obtained. But when series resistance increased up 2 ohm only, the I-V and P-V curves moves to origin drastically. Shunt Resistance is the path of reverse current of the cell. As the shunt resistance increases, the path for reverse current decreased, hence all current goes to load, hence maximum power is obtained. Similarly when the value of shunt resistance decreased, the voltage-controlled section of I-V characteristics curve is moved closer to the origin hence reduced the solar cell performance. It's critical to understand how different factors affect the I-V and P-V characteristics curves of solar cells. The open circuit voltage, short circuit current and maximum power is all variable. The influence of these factors may be extremely beneficial when tracking highest power point of a solar cell applying various methods.

Design and Simulation of Low Power and Voltage Micro Photovoltaic Cell for Mobile Devices

In this study, designed and simulated a micro photovoltaic cell circuit which is part of smartphone battery charging system sensor. Problem discussed in this paper was that smartphone are still charging battery from PLN through a wall outlet, but smartphone would be better off if it had other charging alternatives, such as being able to charge anywhere or mobile. This paper proposed used photovoltaic cell that can convert sunlight into electricity and it can charge the battery on a smartphone. Photovoltaic cell were integrated with smartphone batteries in photovoltaic IC to form a battery charging system that can charge smartphone. The design of the micro photovoltaic cell sensor section is based on from the references paper. Micro photovoltaic cell was design by modifying the resistor value in the micro photovoltaic cell circuit, so the output low voltage and power be able to charge the smartphone battery. Designed and simulated micro photovoltaic cell circuits will be carried out using LTSpice. The results that achived in this research, when shunt resistance value was configure negative, the voltage value around 200mV, the power value around 1,48µW. When the shunt resistance value was configure positive the voltage value around 199mV, the power value around 1,44µW. Analysis was carried out by comparing voltage values obtained in this study with previous studies. In this study, a smaller voltage value was obtained by modifying the resistor value in the micro photovoltaic cell circuit. The circuit design will later be implemented in 0.35µm CMOS technology.

High efficiency and stable solid-state fiber dye-sensitized solar cells obtained using TiO2 photoanodes enhanced with metal organic frameworks

Solid-state fiber dye-sensitized solar cells (SS-FDSSCs) have been the subject of intensive attention and development in recent years. Although this field is only in its infancy, metal–organic frameworks (MOFs) are one such material that has been utilized to further improve the power conversion efficiency of solar cells. In this study, MOF-integrated DSSCs were shown to have potential in the development of solar cell devices with efficiency comparable to or better than that of conventional solar cells. The power conversion efficiency (PCE) of SS-FDSSCs was improved by embedding MOF-801 into a mesoporous-TiO2 (mp-TiO2) layer, which was used as a photoanode in SS-FDSSCs, which are inherently flexible. The PCE of the MOF-integrated SS-FDSSCs was 6.50%, which is comparable to that of the reference devices (4.19%). The MOF-801 enhanced SS-FDSSCs decreased the series resistance (Rs) value, resulting in effective electron extraction with improved short-circuit current density (JSC), while also increasing the shunt resistance (Rsh) value to prevent the recombination of photo-induced electrons. The result is an improved fill factor and, consequently, a higher value for the PCE.

Vision Analysis of the Influence of Piezoelectric Energy Harvesting on Vibration Damping of a Cantilever Beam

A cantilever beam, manufactured from a steel-carrying substrate and two patches of Macro Fiber Composite of P2 type, was a subject of laboratory research. MFC patches were glued on both sides of the carrying substrate and were parallelly connected. An experimental determination of an optimal resistance for both energy harvesting and vibration passive damping of the cantilever beam was the purpose of the conducted laboratory research. The research contained 10 experiments in which courses of the energy-harvesting process and resistive passive damping of vibration were estimated. Energy harvesting was estimated by measurements of the generated current for the given load-resistance values. Resistive passive damping of vibration was assessed by using a vision method that enabled the displacements’ measurements of 10 selected points in the beam structure for the given shunt-resistance values. Values of both load resistance and shunt resistance were chosen on the basis of analytically calculated optimal load resistance and optimal shunt resistance. On the basis of the conducted experiments, the resistance range for which both the energy-harvesting process and the vibration-damping process are most effective was determined.

Enhancement of efficiency of (FA)2BiCuI6 based perovskite solar cells with inorganic transport layers

In this study, a computational modelling of PSCs with the halide double perovskite (FA)2BiCuI6 as the light harvesting layer is done by choosing a number of inorganic electron and hole transport materials for the design of the device configuration. The device configuration FTO/STO/(FA)2BiCuI6/Zn2P3/Au exhibits the best photovoltaic performance with a fill factor (FF) of 70.65% and a power conversion efficiency (PCE) of 18.25%. The solar cell configuration FTO/STO/(FA)2BiCuI6/Zn2P3/Au is modelled further to estimate the optimum input parameters of the (FA)2BiCuI6 layer. The optimum thickness, defect density and the dopant density of the (FA)2BiCuI6 layer are 716.9 nm, 1.0 × 1013 cm−3 and 1.0 × 1016 cm−3 respectively. The optimum operating temperature of the device configuration is identified to be 300 K. The device configuration requires a low value of series resistance (5 Ω cm2) and a high value of shunt resistance (8000 Ω cm2) to deliver maximum possible photovoltaic performance parameters. The device configuration is further optimized by replacing the popular back contact metal Au with other metals having suitable work functions. The device configuration FTO/STO/(FA)2BiCuI6/Zn2P3/Se with the same absorber and transport layers, but with the back metal contact Se provides a FF and a PCE of 69.92% and 18.49% respectively, indicating that Se with a high work function of 5.9 eV can be used as a suitable metal at the back contact for PSCs with the halide double perovskite (FA)2BiCuI6 as the absorber layer.

Comparative photovoltaic and impedance spectroscopic study on carbon counter electrode based CdS quantum dot sensitized solar cell using polysulfide and iodide/triiodide as redox liquid electrolytes

In this investigation we report comparative study on the quantum dot sensitized solar sells (QDSSCs) using polysulfide and iodide/triiodide as redox liquid electrolytes aimed for the improvement in performance of CdS sensitized solar cell. The CdS films were deposited upon bare FTO and nanocrystalline mesoporous TiO2 coated FTO substrates by following a successive ionic layer adsorption and reaction (SILAR) method. The films were characterized by using atomic force microscopy (AFM) measurements and UV–Visible (UV–vis) spectroscopy. Analysing the AFM images height of the nanocrystals was found to be less than 2.84 nm. The estimated size of the CdS quantum dots (QDs) obtained using the UV–vis data and hyperbolic band model (HBM) was 4.94 nm. Photovoltaic performance and impedance spectroscopic measurements were performed on these FTO/TiO2/CdS/Electrolyte/Carbon type QDSSCs under an AM1.5 illumination (100 mW.cm−2) and dark, respectively. The overall power conversion efficiency, short circuit current and the fill factor of polysulfide based device were observed higher than the iodide/triiodide based cell by 280%, 123%, and 95%, respectively. Improvement in series resistance (Rs) and shunt resistance (Rsh) values of polysulfide based device were observed by 830%, and 348%, respectively. The results achieved using low cost ploysulfide electrolyte and carbon as counter electrode are observed higher than the results of the recent attempts made by other research groups for enhancing performance of the CdS QDSSCs using platinum as counter electrode. The better performance of FTO/TiO2/CdS/Polysulfide/Carbon type QDSSC could be attributed to the higher hole-recovery rate of polysulfide leading to a lower probability for charge recombination and the higher electrocatalytic activity at the CE/electrolyte interface resulting the fast electron injection and transfer from CdS QDs into the photoanode substrate.

Modeling and simulation of single- and double-diode PV solar cell model for renewable energy power solution.

Nowadays, most of the country switched to generate their power by renewable energy sources as well as the power industries also mainly focused on the renewable resources for power generation. The renewable resources are solar, wind, biomass, and hydroelectric; out of these, the solar market is developing due to shortage of non-renewable resources. The solar energy is freely obtainable during the year; also, it provides a clean and noiseless environment. Most of the large- and small-scale industries and household consumers moved to generate the power through a PV solar cell. Most of the research work includes the modelling of the PV solar cell based on their requirement in a one-diode model. In this article, a detailed study is provided about the circuit-based single-diode solar cell (SCSC) model and double-diode solar cell (DDSC) with different conditions done in MATLAB/Simulink. Both the SDSC and DDSC models are tested with different values of temperature, irradiation, and shunt resistance. This work helps the researchers study V-I and P-V characteristics of the PV solar cell clearly with different conditions. The outputs of SDSC and DDSC models are compared with simulation outputs. Effect of partial shading is also discussed to get a better idea.

Performance Analysis of Photovoltaic Panels Under the Effect of Electrical and Environmental Parameters in Erbil City

This paper presents the performance analysis of a photovoltaic cell derived from a single diode equivalent circuit under the influence of several kinds of electrical and environmental parameters. The characteristics of a solar cell have been investigated using MATLAB simulation and have been validated experimentally. In this paper the photovoltaic cell is represented by an exact equivalent circuit including all parameters such as a diode saturation current, light generated current, temperature effects, series and shunt resistance values. Also, this paper includes the impacts of clouds, dust, chalk powder, fly ash and bird droppings on the efficiency of the photovoltaic panel. A comparison between the experimental and model simulation results confirmed the reality of results, and indicate the validity of the exact model for photovoltaic performance analysis.

Application of firefly algorithm for power estimations of solar photovoltaic power plants

ABSTRACT Modeling of solar photovoltaic cell is an essential requirement in the computations involved in solar photovoltaic power systems. Some metaheuristic algorithms are used for determining the cell parameters in the literature, however, more investigation is required with reference to varying solar irradiation and temperature to improve the accuracy of the models. Hence, this paper proposes firefly algorithm for identification of the cell parameters accurate enough to construct the cell characteristics under varying solar irradiation and temperature conditions. Experimental results obtained at standard irradiation and temperature of 1000 W/m2, 25°C, and at other irradiation levels such as 80 0 W/m2 and 600 W/m2, temperature levels such as 40°C and 50°C were presented along with simulated values. The value of series resistance, shunt resistance and diode ideality factor for temperatures from 20°C to 60°C and irradiation of 400 W/m2 to 1000 W/m2 are computed using this proposed method. A comparison of the proposed method with other researchers at irradiation of 1000, 800, and 600 W/m2 and 25°C was provided. The results of implementation show that there is a good agreement between computed values and data sheet values. The proposed method will definitely be useful for large scale solar photovoltaic designers, researchers, simulators.

Open‐circuit voltage decay: moving to a flexible method of characterisation

Open-circuit voltage decay (OCVD) is a method to characterise minority carrier effective lifetime ( τ eff ). It is non-destructive, simple and low-cost. It has been mainly used in silicon p-n junctions. τ eff is not only a very important parameter to optimise device design but also to supervise process steps. It is not the only parameter we can obtain by OCVD. Due to the intrinsic space charge region capacitance of a p-n junction, the doping level of the lowest-doped region ( N l ) and built-in potential ( V bi ) are extractable. Moreover, it is also possible to obtain the shunt resistance ( R sh ) value when it has a significant effect on the p-n junction behaviour. The authors first applied the well-established one-diode model in a transient regime to simulate OCVD signal. In a second step, they used an optimisation algorithm to fit the experimental curve of a silicon diode to extract τ eff , N l , V bi and R sh . These values were compared to those obtained from C–V and I–V. Results are promising and demonstrate for the first time, the flexibility of the OCVD method. It opens up the perspective for the development of add-on features of the method and for measuring short lifetime.

Electrical properties of Al/PCBM:ZnO/p-Si heterojunction for photodiode application

In this paper, the electrical characteristics of spin-coated PCBM:ZnO interlayered Al/PCBM:ZnO/Si diode are investigated under the aim of photodiode application. Under dark condition, the diode shows about four orders in magnitude rectification rate and diode illumination results in efficient rectification with increase in intensity. The analysis of current-voltage curve results a non-ideal diode characteristics according to the thermionic emission model due to the existence of parasitic resistances and interface states. The measured current-voltage values are used to extract the barrier height and ideality factor under dark and illumination conditions. Under illumination, photo-generated carriers contribute to the current flow and linear photo-conductivity behavior in photo-current measurements with illumination shows the possible use of hybrid PCBM:ZnO layer in Si-based photodiodes. In addition, change in the series and shunt resistance values under illumination is found to be effective in this light-sensing behavior of the diode. This characteristic is also observed from the typical on/off illumination switching behavior for the photodiodes in transient photo-current, photo-capacitance and photo-conductance measurements with the quick response to the illumination. The deviations from ideality are also discussed by means of distribution of interface states and series resistance depending on the applied frequency and bias voltage.

Solar photovoltaic module performance characterisation using single diode modeling

Single or double diode electrical modeling of SPV module gives valuable results which will help to identify the exact behavior of SPV module under the normal operating condition. Accurate modelling of SPV module will also help to calculate internal resistances (Rs, Rsh) and parasitic of the SPV module. The main contribution of this work is the stepwise simplification of the current equation of single and double diode electrical model of SPV module. Then the single diode model of SPV module having 36 SPV cells in series is simulated in LTspice simulator. Simulated results are compared with labelled electrical parameters which shows close proximity to the labelled parameter at particular values of series and shunt resistance. This paper also presents the effect of variation in series resistance (Rs) and shunt resistance (Rsh) on the performance of the SPV module under normal operating condition. The dependency of SPV electrical parameters (Imax, Vmax, Pmax, FF, η) with the variation of series resistance (Rs) and shunt resistance (Rsh) is simulated, and the effects are discussed in details.

Effect of illumination on electrical parameters of Au/(P3DMTFT)/n-GaAs Schottky barrier diodes

Reverse- and forward-bias current–voltage (I–V) data of the Au/(P3DMTFT)/n-GaAs Schottky barrier diodes (SBDs) were measured in dark and at under various illumination levels (from 50 to 200 W with steps of 25 W) for the purpose of examining the change in electrical parameters such as zero-bias barrier height (Φbo), ideality factor (n), reverse saturation current (Io), series resistance (Rs) and shunt resistance (Rsh) with illumination. The values of n, Φbo and Io were determined using I–V data in dark as 1.34, 0.91 eV and 7.25 × 10−12 A, respectively. On the other hand, these parameters were obtained as 1.85, 0.80 eV and 5.11 × 10−10 A, respectively, when the SBD is exposed to 200 W illumination. The values of shunt resistance (Rsh) and series resistance (Rs) were determined from Ohm’s law and shown as Ri–V plots. Additionally, Cheung’s and modified Norde’s functions were also utilized for the extraction of Rs in dark and under various illumination levels. The energy density distribution profiles of interface states (Nss) were investigated for various illumination levels. The dependency of the energy density distribution profiles of interface states (Nss) on illumination levels was investigated. Obtained results suggest that these electrical parameters are sensitive to illumination. Moreover, Au/(P3DMTFT)/n-GaAs SBDs shows remarkable photovoltaic performance with the values of short-circuit current (Isc) of 1.45 × 10−6 A, open-circuit voltage (Voc) of 0.37 V and fill factor of 0.65 under 200 W illumination.