Lattice Thermal Conductivity Values Research Articles

First principles investigation of double perovskites Li2CuAsZ6 (Z = Cl, Br, I) as a suitable alternatives for energy conversion technologies

The present study employs density functional theory to examine the physical properties of halide double perovskites Li2CuAsZ6 (Z = Cl, Br, I). The stability of the phase has been confirmed by analyzing the cubic layout and the values of the octahedral and tolerance factors. The formation energies of all perovskites have been computed to guarantee thermodynamic stability. The detailed description of the electronic characteristics of Li2CuAsZ6 reveals its behavior as a semiconductor. Energy band gaps of 0.55 eV, 0.33 eV, and 0.088 eV for Li2CuAsCl6, Li2CuAsBr6, and Li2CuAsI6, respectively, are determined by our calculations. Additionally, we have investigated the optical properties of these materials with 0–4 eV energy span in detail, which are reported as strong candidates for use in optoelectronic systems. The BoltzTraP code is employed to evaluate the thermoelectric characteristics. The lower lattice thermal conductivity values for Li2CuAsCl6, Li2CuAsBr6, and Li2CuAsI6 suggest less contribution to thermoelectric functionality. Finally, this discussion indicates the suitability of studied perovskites for energy conversion systems; however, experimental confirmation is necessary before these perovskites may be used in thermoelectric and optoelectronic systems.

Ultralow lattice thermal conductivity in K2AuBi and its thermoelectric properties

Thermoelectric materials are best known for their prowess to transform the environment’s waste heat into electricity. In an endeavor to explore new thermoelectric prospects, in the present study, we investigate K2AuBi using density functional theory-based first-principles simulations. From our simulations, we find an intrinsically low lattice thermal conductivity of 0.43 W m−1 K−1 at 300 K in K2AuBi. Based on our detailed analysis, we find the reasons for such a low value of lattice thermal conductivity as, low phonon group velocities, short phonon lifetimes, anharmonicity in the lattice vibrations, and significant mean square displacements of K and Au atoms. The large mean square displacements hint at weak bonding and anharmonicity in the lattice vibrations, favoring more phonons scattering. We also find that the vibrations of K-atoms can be related to rattlers, conducive to low lattice thermal conductivity. Our simulations predict a high value, ∼784 μV K−1, of Seebeck coefficient at 700 K on account of the large density of states in the vicinity of Fermi level. Combining our computed lattice thermal conductivity with electrical transport properties, we obtain a high figure of merit, ZT∼ 1.04, at 700 K in K2AuBi.

Effect of AFM ordering on thermoelectric responses of Mg3X2 (X: C, Si, Ge) monolayers : a DFT insight

Two-dimensional materials have gained a lot of attention in the last few decades due to their potential applications in thermoelectric and nano-electronic devices. This study systematically presents the mechanical, electronic and thermoelectric characteristics of two-dimensional honeycomb-kagomeMg3X2(X:C,Si,Ge) structures in the framework of density functional theory computations and by solving semiclassical Boltzmann transport equation. The geometrical stability of these structures is validated by phonon spectrum and molecular dynamics simulations. Following the elastic constants, we have inferred that all the systems are mechanically stable and brittle in nature. Lower values of Debye temperature of all structures suggest thatMg3X2monolayers should have lower values of lattice thermal conductivity compared to graphene. Electronic structure calculations indicate that these materials are semimetallic in their nonmagnetic phase. All the structures display remarkably low lattice thermal conductivity (0.9-1.5 W (mK)-1) due to a large scattering factor and higher anharmonicity. The presence of sharp density of states peaks close to the Fermi level, arising from nearly flat and dispersionless band in the antiferromagnetic (AFM) arrangement, is poised to enhance the Seebeck coefficient, thereby potentially boosting the thermoelectric performance. The estimated values of thermoelectric figure of merit (ZT) are around 0.78 and 0.67 forMg3Si2andMg3Ge2structure respectively in AFM phase atT= 700 K. These outcomes of our findings suggest thatMg3X2monolayers exhibit substantial promise for thermoelectric device application.

Electronic, optical, and thermoelectric behaviour of KCuX (X = S, Se, Te) monolayers.

In the past few decades, two-dimensional (2-D) materials gained huge deliberation due to their outstanding electronic and heat transport properties. These materials have effective applications in many areas such as photodetectors, battery electrodes, thermoelectrics, etc. In this work, we have calculated structural, electronic, optical, and thermoelectric properties of KCuX (X = S, Se, Te) monolayers (MLs) with the help of first-principles-based calculations and semi-classical Boltz- mann transport equation (BTE). The phonon dispersion calculations demonstrate the dynamical stability of the KCuX (X = S, Se, Te) MLs. Our results show that the monolayers of KCuX (X = S, Se, Te) are semiconductors with band gaps of 0.193 eV, 0.26 eV, and 1.001 eV respectively, and therefore they are suitable for photovoltaic applications. The optical analysis illustrates that the maximum absorption peaks of the KCuX (X = S, Se, Te) MLs are located in visible and ultraviolet (UV) regions, which may serve as a promising candidate for designing advanced optoelectronic devices. Furthermore, thermoelectric properties of the KCuS and KCuSe MLs, including See- beck coefficient, electrical conductivity, electronic thermal conductivity, power factor, and figure of merit, are calculated at different temperatures 300 K, 600 K, and 800 K. Additionally, we also focus on the analysis of Gru ̈neisen parameter and various scattering rates to further explain their ultra-low thermal conductivity. Our results show that KCuS and KCuSe possess ultra-low lattice thermal conductivity value of 0.15 Wm-1K-1 and 0.06 Wm-1K-1 respectively, which is lower than those of recently reported KAgSe (0.26 Wm-1K-1 at 300 K) and TlCuSe (0.44 Wm-1K-1 at 300 K), indicating towards the large value of ZT. These materials are found to possess desirable thermoelectric and optical properties, making them suitable candidates for efficient thermoelectric and optoelectronic device applications.

Tailoring the Lattice Thermal Conductivity of Al‐Incorporated Ag2Se for Near Room Temperature Waste Heat Recovery

AbstractAg2Se is categorized as a typical ′phonon‐liquid‐electron‐crystal (PLEC)′material, exhibiting an extremely low . In this study, Al substituted Ag2Se samples were synthesized by mechanical alloying process followed by hot press densification technique. The Al substituted sample shows an exceptionally high mobility of 2360 cm2 V−1 S−1 at room temperature and a maximum power factor of 1442 μWm−1 K−2 at 383 K. The phonon scattering induced by various crystal imperfections due to Al substitution helped to obtain a very low lattice thermal conductivity value of 0.3 W/mK. A high figure of merit (zT) of 0.4 at 383 K was obtained as a result of the simultaneous effect of boosting the electrical transport properties and decreasing the thermal conductivity. This present work summarizes that the Al substitution is highly significant in improving the thermoelectric properties of Ag2Se.

Optimization of Co4Sb11.5Te0.5 thermoelectric performance through Al filling under high temperature and high pressure

So far, the method of optimizing the thermoelectric properties of skutterudite CoSb3 is usually to achieve a breakthrough in high-properties thermoelectric merit by selecting excellent doping atoms and determining a reasonable percentage of atoms. In this study, we achieved the preparation of small atomic radius Al-filled Co4Sb11.5Te0.5 compounds by high-temperature and high-pressure (HTHP) synthesis methods. The thermoelectric properties of the samples AlxCo4Sb11.5Te0.5 were optimized from two dimensions: synthesis pressures (1.0 GPa, 1.5 GPa, 2.0 GPa) and Al filling concentration (x = 0.1, 0.2, 0.3, 0.5), ultimately achieving effective decoupling of electron-phonon transport properties. The experimental results show that Al doping can optimize the electrical transport properties of materials effectively, rapid synthesis method of HTHP can introduce abundant grain boundaries, diversification of grain sizes, a large number of dislocations and widely distributed nano second phase, etc. These microstructures in bulk materials form a multi-scale phonon scattering network in situ, which can effectively scatter phonons and reduce the lattice thermal conductivity effectively. After optimizing the synthesis pressure and Al filling concentration through orthogonal transformation, the sample Al0.3Co4Sb11.5Te0.5 prepared at a synthesis pressure of 1.5 GPa obtained a minimum lattice thermal conductivity value of 0.88 W m−1 K−1, a maximum power factor of 40.96 μ W cm−1 K−2 and a maximum zT value of 1.18 at 773.15 K.

Predicting the stability and exploring the fundamental physical properties of tetragonal Gd2O3: A comprehensive first-principles investigation

A burnable absorber is a material used in nuclear reactors to manage reactivity and extend operational cycles by absorbing neutrons. Gadolinium oxide (Gd2O3) is a prevalent burnable absorber employed in nuclear reactors. By utilizing density functional theory (DFT) within a first-principles framework, a comprehensive exploration into the physical characteristics of the predicted tetragonal phase of Gd2O3 has been effectively conducted. The investigation encompasses structural, electronic, magnetic, elastic, mechanical, bonding, thermophysical, and optical aspects. Since tetragonal Gd2O3 has not been experimentally synthesized, the stability of the tetragonal phase is confirmed through assessments of its structural, lattice dynamical, thermodynamic, and mechanical attributes. Demonstrating semiconducting behavior, the electronic nature reveals a band gap of 1.241 eV. The density of states (DOS) illustration validates the semiconductor electronic character, and the calculated magnetic moment, determined through up-down spin DOS, is 3.06 μB/f.u. The Poisson’s ratio value reflects the dominance of ionic bonding in Gd2O3, a finding corroborated by bond population analysis. Impressively, the tetragonal Gd2O3 displays elevated lattice thermal conductivity value in comparison to its cubic, monoclinic, and hexagonal counterparts. Furthermore, the determined melting point registers at 1709.31 K. In the realm of optics, an analysis based on frequency dependence reveals that tetragonal Gd2O3 holds promise as a candidate for optoelectronic applications, particularly in the ultraviolet (UV) energy range.

Thermoelectric properties of Sn2SSe via band engineering with Ge alloying

The thermoelectric properties of Sn2SSe are investigated via band engineering using Ge alloying. In this work, the electronic and thermoelectric properties of Sn2SSe doped with Ge at different concentrations (x=0, 0.25, 0.5, 0.75, and 1) are investigated using density functional theory and Boltzmann transport theory. At 300K, the Seebeck coefficient and electrical conductivity are enhanced with Ge alloying from −960μV/K to −1535 μV/K and from 3.4 × 105 S/cm to 4.1 × 105 S/cm respectively. However, the lowest value of lattice thermal conductivity is observed at 700 K which is 2.7W/mK. At x = 1, A remarkably high ZT value 1.7 is achieved at 700 K for Sn2(1−x)Ge2(x)SSe . The high ZT value is 1.8 times greater than pure compound.

Exploring superconductivity, supercapacitance and thermoelectric properties of NbCr[formula omitted] and its alloys with Li and Mg: A first-principles Investigation

In the present study, the superconductivity, supercapacitance, and thermoelectric properties of the NbCr2 and its alloys with Li and Mg (with alloy composition of x=0.5 in replacement with Cr atoms) have been surveyed using density functional theory. The mechanical, thermodynamic, and dynamic stability of the pure and alloy compositions have been checked by the results of the cohesive energy, enthalpy of formation energy, and phonon density of states. Moreover, the largest value of the critical temperature (Tc) which has been achieved belongs to the pure NbCr2 with a value of 13.76 K. In addition, the largest values of Tc for Li and Mg alloys are 11.83 and 3.42 K, respectively. Furthermore, the largest peak of the quantum capacitance at room temperature and as a function of the applied voltage is also related to the pure NbCr2 with a value of 676.77 μF/cm2 at the voltage of −1.86 V. In addition, the largest value of the surface charge storage occurred at the negative bias of −1.88 V with a value of −1261.27 μC/cm2. For thermoelectric properties, the largest peak of the thermoelectric power factor per relaxation time as a function of chemical potential and at room temperature belongs to Li alloy with a value 20.03 × 1016μW/(m K2 s) at the negative chemical potentials of −0.73 eV. The largest value of electronic thermal conductivity per relaxation time belongs the Li alloy at 500 K with a value of 48.71 × 1014 W/(m K s) and the largest value of lattice thermal conductivity is also related to Li alloy with the value of 22.8 W/(m K) at 100 K. All of these results represent the materials which not only have the superconductivity property but also supercapacitance and thermoelectric properties that could be useful as electrode materials in the energy storage industries.

Anomalous lattice thermal conductivity increase with temperature in cubic GeTe correlated with strengthening of second-nearest neighbor bonds

Understanding thermal transport mechanisms in phase change materials is critical to elucidating the microscopic picture of phase transitions and advancing thermal energy conversion and storage. Experiments consistently show that cubic phase germanium telluride (GeTe) has an unexpected increase in lattice thermal conductivity with rising temperature. Despite its ubiquity, resolving its origin has remained elusive. In this work, we carry out temperature-dependent lattice thermal conductivity calculations for cubic GeTe through efficient, high-order machine-learned models and additional corrections for coherence effects. We corroborate the calculated phonon properties with our inelastic X-ray scattering measurements. Our calculated lattice thermal conductivity values agree well with experiments and show a similar increasing trend. Through additional bonding strength calculations, we propose that a major contributor to the increasing lattice thermal conductivity is the strengthening of second-nearest neighbor interactions. The findings herein serve to deepen our understanding of thermal transport in phase-change materials.

AsTe3: A novel crystalline semiconductor with ultralow thermal conductivity obtained by congruent crystallization from parent glass

The synthesis of novel narrow-band-gap semiconductors with ultralow thermal conductivity opens a pathway to the design of functional materials with high thermoelectric performance or with interesting optical sensitivity in the infrared range. Here, we report on the discovery of the novel crystalline binary AsTe3 (c-AsTe3) prepared by spark plasma sintering (SPS) from full and congruent crystallization of amorphous AsTe3 (a-AsTe3) previously prepared by twin roller quenching. X-ray diffraction suggests that the structure of c-AsTe3 can be described as a superstructure of elementary Te with a specific distribution of As and Te atoms. More specifically, it appears as an intergrowth of a Te subunit (3 atoms) and As2Te5 subunit (6 As + 15 Te atoms) separated with interlayer spaces. The optical transmittance measured on both crystalline and amorphous AsTe3 indicates a maximum transmittance of 22 % over the infrared range 10–25 µm. Transport properties measurements, performed between 5 and 375 K, reveal that AsTe3 behaves as a lightly doped, p-type semiconductor. The complex crystal structure combined with a small-grain-size microstructure of the sample yields extremely low lattice thermal conductivity values of 0.35 W m−1 K−1 near 300 K. This poor ability to conduct heat is the main property that gives rise to an estimated dimensionless thermoelectric figure of merit ZT of ∼0.3 at 375 K. These findings show that the recrystallization of amorphous phases by SPS provides an effective approach for stabilizing novel phases with interesting functional properties.

Into the Void: Single Nanopore in Colloidally Synthesized Bi2Te3 Nanoplates with Ultralow Lattice Thermal Conductivity.

Bi2Te3 is a well-known thermoelectric material that was first investigated in the 1960s, optimized over decades, and is now one of the highest performing room-temperature thermoelectric materials to-date. Herein, we report on the colloidal synthesis, growth mechanism, and thermoelectric properties of Bi2Te3 nanoplates with a single nanopore in the center. Analysis of the reaction products during the colloidal synthesis reveals that the reaction progresses via a two-step nucleation and epitaxial growth: first of elemental Te nanorods and then the binary Bi2Te3 nanoplate growth. The rates of epitaxial growth can be controlled during the reaction, thus allowing the formation of a single nanopore in the center of the Bi2Te3 nanoplates. The size of the nanopore can be controlled by changing the pH of the reaction solution, where larger pores with diameter of ∼50 nm are formed at higher pH and smaller pores with diameter of ∼16 nm are formed at lower pH. We propose that the formation of the single nanopore is mediated by the Kirkendall effect and thus the reaction conditions allow for the selective control over pore size. Nanoplates have well-defined hexagonal facets as seen in the scanning and transmission electron microscopy images. The single nanopores have a thin amorphous layer at the edge, revealed by transmission electron microscopy. Thermoelectric properties of the pristine and single-nanopore Bi2Te3 nanoplates were measured in the parallel and perpendicular directions. These properties reveal strong anisotropy with a significant reduction to thermal conductivity and increased electrical resistivity in the perpendicular direction due to the higher number of nanoplate and nanopore interfaces. Furthermore, Bi2Te3 nanoplates with a single nanopore exhibit ultralow lattice thermal conductivity values, reaching ∼0.21 Wm-1K-1 in the perpendicular direction. The lattice thermal conductivity was found to be systematically lowered with pore size, allowing for the realization of a thermoelectric figure of merit, zT of 0.75 at 425 K for the largest pore size.

Ultrahigh average zT realized in polycrystalline SnSe0.95 materials through Sn stabilizing and carrier modulation

The average zT determines the conversion efficiency, and the power factor plays an important role in average zT value. However, the inadequate electrical conductivity of SnSe materials seriously limits its application. Herein, the TaCl5-doped in polycrystalline SnSe0.95 materials synthesized using the melting method and combined with spark plasma sintering technology achieves a zT value of 1.64 at 773 K and a record zTave of 0.62 from 323 K to 773 K. The electrical conductivity increases due to the released electron carrier induced by effective TaCl5 doping. According to the DFT calculation, the energy band of TaCl5-doped samples is narrowed, which can enhance the electron transport. Besides, the Seebeck coefficient is maintained at an elevated level as a result of the incorporation of the heavy element Ta. Due to the significantly enhanced electrical conductivity and maintained high Seebeck coefficient, the power factor reaches to 622 μW·m−1·K−2 at 773 K for the SnSe0.95 + 1.75% (in mass) TaCl5 sample, which is almost 21 times higher than that of the pristine sample. Simultaneously, a high average power factor value of 334 μW·m−1·K−2 for the SnSe0.95 + 1.75% (in mass) TaCl5 sample from 323 to 773 K was obtained. It is surprisingly found that the Ta element plays another important role to improve the stability of SnSe0.95 by forming Ta2Sn3 and removing the low melting point Sn, which usually existed in n-type SnSe samples, resulting in the decreased lattice thermal conductivity. A low lattice thermal conductivity value of 0.24 W·m−1·K−1 was also obtained for the SnSe0.95 + 2.0% (in mass) TaCl5 sample at 773 K due to the multiscale defects. Consequently, the SnSe0.95 + 2.0% (in mass) TaCl5 sample obtains a peak zT value of 1.64 at 773 K and a record zTave of 0.62 from 323 to 773 K, and the theoretically calculated conversion efficiency reaches 11.2%, it can be utilized for power generation and/or cooling at a broad temperature range. This strategy of introducing high-valence halides with heavy element can optimize the thermoelectric performance for other material systems.

High thermoelectric properties in polycrystalline SnSe materials realized by rare earth halide Co-doping

SnSe materials have garnered significant interest due to the intrinsic low thermal conductivity. However, its limited electrical conductivity hinders their practical implementation. This study achieved a high ZT value of 1.40 at 773 K in the samples of n-type polycrystalline SnSe0.95 + x wt% SmCl3 + y wt% ErCl3 (x = 0, 0.75, 1.0, 1.25, and 1.5; y = 0, 0.0675, 0.125, and 0.25) since (SmCl3, ErCl3) co-doping decoupled the electrical-thermal transport properties. First, the released electron carrier concentration due to SmCl3 doping enhanced the electrical transport properties. The SnSe0.95 + 1.25 wt% SmCl3 sample exhibited a high power factor of 563 μWm−1K−2 at 773 K. Then, the lattice thermal conductivity markedly decreased with further ErCl3 doping due to the high-density dislocations and coherent boundary, resulting in effective the phonon scattering. Additionally, the special microtopography was conducive to the decreased lattice thermal conductivity. Therefore, the SnSe0.95 + 1.25 wt% SmCl3 + 0.125 wt% ErCl3 sample achieved a low lattice thermal conductivity value of 0.28 Wm−1K−1 at 773 K. Simultaneously, the (SmCl3, ErCl3) co-doped samples maintained the electrical transport properties than the SmCl3-doped samples. Consequently, the SnSe0.95 + 1.25 wt% SmCl3 + 0.125 wt% ErCl3 sample obtained a peak ZT value of 1.40 at 773 K and a competitive average ZT value of 0.37 from 323 to 773 K, and a theoretically calculated conversion efficiency reached 7.2%, which can be applied in the deep space for power generation. This strategy can be utilized to optimize the thermoelectric performance of other thermoelectrical material systems.

Thermoelectric properties of Co doped TiNiCo<sub><i>x</i></sub>Sn alloys fabricated by melt spinning

Although TiNiSn-based half-Heusler thermoelectric materials obtain high power factors, their high lattice thermal conductivity greatly hinders the improvement of thermoelectric properties. In this work, TiNiCo<sub><i>x</i></sub>Sn (<i>x</i> = 0–0.05) samples are prepared by melt spinning combined with spark plasma sintering method, and their phase, microstructure and thermoelectric properties are studied. The XRD results show that the main phase of all samples is TiNiSn phase, and no any other impurity phases are found, indicating that the high purity single phase can be prepared by rapid quenching process combined with SPS process. In the solidification process, the large cooling rate (10<sup>5</sup>–10<sup>6</sup> K/s) is conducive to obtaining the uniform nanocrystalline structure. The grains are closely packed, with grain sizes in a range of 200–600 nm. The grain sizes decrease to 50–400 nm for the Co-doping samples, which indicates that Co doping can reduce the grain size. For the <i>x</i> = 0 sample, the thermal conductivity of the rapid quenching sample is significantly lower than that of bulk sample, with an average decrease of about 17.8%. Compared with the TiNiSn matrix, the Co-doping sample has the thermal conductivity that decreases significantly, and the maximum decrease can reach about 38.9%. The minimum value of lattice thermal conductivity of TiNiCo<sub><i>x</i></sub>Sn samples is 3.19 W/(m·K). Therefore, Co doping can significantly reduce the <i>κ</i><sub>l</sub> values of TiNiCo<sub><i>x</i></sub>Sn (<i>x</i> = 0.01–0.05) samples. With the increase of Co doping amount <i>x</i>, n/p transition is observed in the TiNiCo<sub><i>x</i></sub>Sn samples, resulting in gradually reducing the conductivity and the power factor, and finally deteriorating the electrical transport performance, of which, the TiNiSn sample obtains the highest power factor of 29.56 W/(m·K<sup>2</sup>) at 700 K. The <i>ZT</i> value decreases with the Co doping amount <i>x</i> increasing, and the maximum <i>ZT</i> value of TiNiSn sample at 900 K is 0.48. This work shows that the thermal conductivity of TiNiSn can be effectively reduced by using the melt spinning process and magnetic Co doping.

Ba15Zr14Te42: a new complex ternary telluride structure with low thermal conductivity.

Heavier metal-based tellurides with complex structures are of great interest for thermoelectric (TE) applications. Herein, we report the synthesis of a new telluride Ba15Zr14Te42 using high-temperature reactions of elements. Our single-crystal X-ray diffraction study reveals that it crystallizes in the space group R3̄c of the trigonal crystal system and is isostructural to its Se analogue Ba15Zr14Se42 complex. The unit cell of the structure accommodates 426 atoms with cell dimensions of a = b = 13.2666(10) Å, c = 96.195(9) Å, and V = 14 662(3) Å3. This structure consists of 18 unique crystallographic atoms (3 × Ba, 8 × Zr, and 7 × Te). The bonding of Zr and Te atoms creates chains of ∞1[Zr14Te42]30-, which are separated by the Ba2+ cations. Although all the Zr atoms have a coordination number of 6, they form two types of coordination polyhedra by bonding with six Te atoms: slightly distorted octahedral and trigonal prisms of ZrTe6. We have synthesized polycrystalline Ba15Zr14Q42 (Q = Se/Te) samples, which were characterized by optical absorption studies to reveal direct bandgaps of <0.5 eV for the Te analogue and 1.3(1) eV for the Se analogue. The lattice thermal conductivity (klat) values of the samples are ultralow: ∼0.46 W mK-1 and ∼0.30 W mK-1 at 773 K for the Te and Se analogues, respectively. Temperature-dependent resistivity and thermopower studies were carried out for the Ba15Zr14Te42, which showed the p-type degenerate semiconducting nature of the sample at high temperatures. The theoretical DFT studies predict a bandgap of 0.14 eV for the Ba15Zr14Te42 phase.

Lone-pair electron-induced low lattice thermal conductivity and excellent thermoelectric performance of AuX (X = S, Se, Te) monolayers

We present a detailed study on the phonon thermal transport and thermoelectric (TE) properties of gold monochalcogenide AuX (X = S, Se, Te) monolayers via first-principles calculations and the Boltzmann transport theory. At room temperature, the calculated lattice thermal conductivity (κl) values in the x-direction (y-direction) were determined to be 12.66 (3.59), 6.06 (1.23), and 3.02 (0.40) W/(m·K) for the AuS, AuSe, and AuTe monolayers, respectively. The analysis of scattering matrix elements and anharmonic scattering rates suggested that the presence of strong bond anharmonicity leads to low κl values. This anharmonicity was induced by the nonlinear electrostatic repulsive force between lone-pair electrons (LPEs) surrounding the chalcogen atom and adjacent bonding electron. Furthermore, the AuS monolayer exhibited the highest bond anharmonicity among the three monolayers. This can be attributed to the reduced strength of the electrostatic repulsive force when electronegativity decreased from S to Se and Te. Although the AuS monolayer exhibited the strongest bond anharmonicity, its κl was still the largest, demonstrating that among the factors that influence κl, harmonic factors have a greater effect than anharmonic parameters. When the atomic mass was increased, the phonon frequencies, phonon group velocities, and κl decreased. Benefiting from low κl induced by LPEs, the maximum ZT values of p-type doped AuSe and AuTe monolayers exceeded 1.0 and 2.0 at T = 800 K, respectively. These results not only confirmed that the introduction of LPEs can reduce the lattice thermal conductivity and enhance the TE performance of 2D materials, but also demonstrated the promising potential of the 2D AuX family for applications in high-temperature TE devices.

Computational study of lattice and thermoelectric properties of Rb2LiTlF6 double perovskite

We applied the density functional theory formalism to compute the lattice thermal conductivity, transport and thermoelectric properties of Rb2LiTlF6 double perovskite in the cubic phase. To gain some insights on lattice related dynamic behaviour of this material, we determined its phonon lifetimes and Grüneisen parameters within the considered frequency range. This quaternary compound has a very low value of lattice thermal conductivity, with the predicted value of 0.687 W/mK at 300 K. The highest value of dimensionless figure of merit was determined to be 5.73 × 10−3 at 800 K when hole concentration is 1020 cm−3, this low ZT value could be attributed to the wide band gap nature of this compound. Our results will serve as a benchmark for future experimental and theoretical research on lattice and thermoelectric properties of this material.

First principle examination of two dimensional rare-earth metal germanide halides Y2GeX2 (X = Cl, Br, I) for thermoelectric applications

In the present work electronic, structural and thermoelectric properties of newly designed layered rare-earth metal germanide halides such as Y2GeX2 (X = Cl, Br, I) are investigated. These materials are indirect band gap semiconductors with narrow band gap 0.30 eV for Y2GeCl2,0.36 eV for Y2 GeBr2, and 0.41 eV for Y2GeI2 respectively. First principles method along with Boltzmann transport equations (BTE) is utilized together to analyse the thermoelectric properties. These materials are dynamically and mechanically stable. Thermoelectric coefficients such as electrical conductivity, seebeck coefficient and thermal conductivity are computed and put together to ultimately get the Figure of merit (ZT). Y2GeI2 has highest figure of merit (ZT) of 0.42 with Seebeck coefficient 532.12 VK−1, electrical conductivity 8.6 ×105Sm−1 and has lowest lattice thermal conductivity value of 5.55 Wm−1K−1 among three materials, which is necessary to achieve high figure of merit. The computed value of Figure of merit 0.07, 0.22 and 0.42 for Y2GeCl2, Y2GeBr2 and Y2GeI2 accordingly, shows that these materials can be considered as good candidates for energy harvesting in thermoelectric applications.

A comparative investigation on the fundamental physical properties of UX2 (X = O, N, C, Si and S) solid nuclear fuel materials: A DFT + U study

This study investigates and compares the physical properties of various UX2 (X = O, N, C, Si and S) nuclear fuels using a combination of Density Functional Theory (DFT) and Hubbard U correction parameter (U) to accurately model the electronic structure and account for strong correlation effects among 5f orbital electrons. Spin-polarized DFT + U method is employed to optimize the structures of the considered compounds. The computational analysis reveals that UO2 and UN2 exhibit Mott-insulating properties, while the remaining UX2 compounds demonstrate metallic nature. To assess the mechanical aspects of these materials, the study evaluates their mechanical stability, Vickers hardness and machinability index through calculations of elastic constants. Notably, all the UX2 fuels are found to be mechanically stable and possess ductility. Both the two-dimensional (2D) and three-dimensional (3D) depictions of the elastic moduli for the analyzed solid fuels demonstrate the presence of elastic anisotropy. The famous Slack's equation is used to determine the lattice thermal conductivity of the UX2 fuels, providing valuable insights into their thermal properties. Among the investigated materials, UC2 exhibits the highest values of Debye temperature and lattice thermal conductivity, which amount to 412 K and 15.73 Wm−1 K−1 at 300 K, respectively. Furthermore, UN2 demonstrates the highest melting temperature. Among the compounds under investigation, UC2 and UN2 fuels exhibit the most minimal thermal expansion and the greatest heat capacity. Based on these findings, UC2 and UN2 emerge as promising alternative fuel materials to UO2 for potential use in nuclear power reactors. This research contributes to the ongoing efforts in identifying alternative fuel materials.