Vacuum Ultraviolet Light Research Articles

Vacuum-ultraviolet light source for enhanced production of metastable krypton and xenon beams

Vacuum-ultraviolet light source for enhanced production of metastable krypton and xenon beams

Polarization measurement of vacuum ultraviolet light using visible fluorescence from neon atoms

The polarization state of the vacuum ultraviolet light has been studied with a fluorescence polarimeter based on the conversion of short wavelength light into visible fluorescence via atomic resonance. In addition to the previously established method using helium atoms, the results show that polarization state of vacuum ultraviolet light can be evaluated by observing the visible fluorescence emitted from neon atoms. This study demonstrates that a fluorescence polarimeter can be used in conjunction with a variety of atoms and molecules and thus extends the range of wavelengths to which this method can be applied.

Reflectivity measurement of a silicon carbide mirror sample for ITER divertor vacuum ultraviolet spectrometer.

The first mirror is the front-end optic component that reflects light emitted from the plasma to the diagnostic system in fusion plasmas. Silicon carbide (SiC), known for its relatively high mechanical strength and radiation tolerance, has been selected as the substrate material for the first mirror in the ITER divertor vacuum ultraviolet (VUV) spectrometer. To measure the reflectivity of the ellipse cylindrical SiC mirror to be manufactured, a device for reflectivity measurement in the VUV wavelength range was developed. First, the reflectivity of a sample SiC mirror (15mm diameter × 10mm thick) was measured across the ITER-required incidence angles, and the results are reported in this study. A hollow cathode lamp with helium gas was used as the VUV light source in the wavelength range of 23-60nm, and a dedicated VUV spectrometer to select specific wavelengths was developed. The spectrometer utilized laminar-type replica diffraction gratings (Shimadzu 30-006) and two back-illuminated charge-coupled devices (BI-CCD, Andor DO 940P-BEN) for the grating and detector, respectively. A cropping technique with aperture was employed to precisely localize the VUV light's reflection onto the SiC mirror surface. The experimentally measured reflectivity values of SiC at the required incidence angles of VUV light were compared with theoretically calculated reflectivity curves. The oxidation layer (SiO2) formed on the SiC surface and the incidence angle of VUV light to the BI-CCD chip (E2V) would be the factors affecting the accuracy of the reflectivity.

Physicochemical and structural properties of silica films prepared from perhydropolysilazane using vacuum ultraviolet irradiation

Developing techniques to form functional films at low temperatures is crucial for enabling their application on materials with limited heat resistance. In this study, silica films were prepared by irradiating a perhydropolysilazane (PHPS) precursor, which contains reactive Si–H and N–H groups and is free from organics, with vacuum ultraviolet (VUV) light under a controlled atmosphere. To investigate the quality of the resulting films and mechanisms behind photochemical conversion, infrared and electron spectroscopic measurements were performed. The results revealed that VUV irradiation converted the top surface of the film into silica, irrespective of the atmospheric conditions. However, differences in the oxygen concentration affected both the VUV light intensity penetrating the film and the oxygen diffusion into it, leading to the formation of silica or silicon oxynitride within the film. Under irradiation, PHPS was converted to silica not only from the surface but also from the interface with the substrate. In addition, silica was formed even at long irradiation distances, in which case VUV light barely reached the PHPS surface owing to absorption by atmospheric oxygen. These findings demonstrate that the silica-film formation involved two processes: breaking of chemical bonds induced by VUV photons and oxidation due to oxygen diffusion from the surface. The spectroscopic measurements and X-ray reflectivity results indicated that the composition, chemical state, Auger parameter, and density of the prepared silica film were comparable to those of a silica film prepared through heat treatment at 500°C. Further, the prepared silica film using VUV irradiation had a smoother surface than that of the heat-treated film. The thickness of the prepared film remained unchanged before and after VUV irradiation, indicating that the formation process using VUV irradiation suppressed the shrinkage of the film during the conversion of PHPS to silica.

Differences in the Modification Effect in the Depth Direction on the Surface of Epoxy Resin Irradiated with Vacuum Ultraviolet Light

Differences in the Modification Effect in the Depth Direction on the Surface of Epoxy Resin Irradiated with Vacuum Ultraviolet Light

Coexistence of near- EF Flat Band and Van Hove Singularity in a Two-Phase Superconductor

Quantum many-body systems, particularly, the ones with large near-EF density states, are well known for exhibiting rich phase diagrams as a result of enhanced electron correlations. The recently discovered locally noncentrosymmetric heavy fermion superconductor CeRh2As2 has stimulated extensive attention due to its unusual H−T phase diagram consisting of two-phase superconductivity, antiferromagnetic order, and possible quadrupole-density wave orders. However, the critical near-EF electronic structure remains experimentally elusive. Here, we provide this key information by combining soft-x-ray and vacuum ultraviolet (VUV) angle-resolved-photoemission-spectroscopy measurements and atom-resolved density-functional-theory (DFT)+U calculations. With bulk-sensitive soft x ray, we reveal quasi-2D hole and electron pockets near the EF. On the other hand, under VUV light, the Ce flat bands are resolved with the c−f hybridization persisting up to well above the Kondo temperature. Most importantly, we observe a symmetry-protected fourfold Van Hove singularity (VHS) coexisting with the Ce 4f5/21 flat bands at the X point, which, to the best of our knowledge, has never been reported before. Such a rare coexistence is expected to lead to a large density of states at the zone edge, a large upper critical field of the odd-parity phase, as well as spin and/or charge instabilities with a vector of (1/2, 1/2, 0). Uniquely, it will also result in a new type of f-VHS hybridization that alters the order and fine electronic structure of the VHS and flat bands. Our findings provide not only key insights into the nature of multiple phases in CeRh2As2 but also open up new prospects for exploring the novelties of many-body systems with f-VHS hybridization. Published by the American Physical Society 2024

Temperature behavior of Ce3+ emission in (Lu,Y)2SiO5 single crystals excited by vacuum ultraviolet synchrotron light

Cerium doped (Lu,Y)2SiO5 (or LYSO) single crystals have been studied by means of luminescence excitation spectroscopy in the temperature range from 7 up to 300 K. Vacuum ultraviolet excitations in 4.5–8 eV energy range from synchrotron radiation of 1.5 GeV storage ring of MAX IV synchrotron facility. It is shown that both type of Ce3+ emission centers (seven and six coordinated centers) are excited under any excitation energy used. It was concluded that the same energy transfer processes from host lattice to impurity ions are involved independently on coordination of Ce3+. It is also demonstrated that excitonic mechanism of energy transfer is dominant under chosen excitation and intrinsic and bound excitons are included in excitation of Ce3+ luminescence in LYSO.

Cryogenic setup for the characterization of wavelength-shifting materials for noble element radiation detectors

In the present work, we describe a new cryogenic setup for studies of wavelength-shifting materials for optimised light collection in noble element radiation detectors, and discuss the commissioning results. This SiPM-based setup usesαinduced scintillation in gaseous argon as the vacuum ultraviolet light source with the goal of characterising materials, such as polyethylene naphthalate (PEN) and tetraphenyl butadiene (TPB), in terms of their wavelength-shifting efficiency. Preliminary results obtained with the system are consistent with the ones reported in literature: 0.5±0.05 in terms of WLS efficiency (PEN/TPB). A value of 1.24 μs was obtained for the triplet lifetime in Ar, which is a factor of 2.6 smaller than the one described in literature due to the presence of impurities. Further extensions of the system are currently being studied. The foreseen upgrades are expected to allow the study of GEM-like structures potentially interesting for rare-event searches. The design of the setup will be addressed along with the first results.

Compact tunable 80 MHz repetition rate vacuum ultraviolet light source up to 10 eV: intracavity high harmonic generation by nonlinear reflection on a AlN nanofilm in a mode locked Ti:sapphire oscillator

We report the realization of an intra-oscillator high harmonic source based on a Kerr lens mode locked Ti:sapphire laser running at 80 MHz repetition rate. A nonlinear medium consisting of an AlN nanofilm on a thin sapphire substrate is placed inside the oscillator cavity. The harmonics are generated, in reflection geometry, on the AlN nanofilm, directing the harmonic beam out of the cavity. Exploiting the benefits of this approach, a compact size, tunable, high repetition rate and coherent vacuum ultraviolet light source with a spectrum up to the 7th harmonic has been achieved. In particular, the powerful 5th harmonic covering the 145-163 nm range aims to be an attractive tunable light source for spectroscopical applications.

193 nm immersion photodetector with an ultra-high EQE of 83.7%

With the development of chip to high-density integration, the requirement of lithography precision is higher and higher. In this process, controlling the power of the lithography exposure light source is very important to improve the quality of the chip. However, most detectors are unable to conduct light detection in liquid environments, especially in the aspects of real-time detection and calibration of light power in immersion deep ultraviolet lithography. In this paper, the AlN film epitaxial on n-SiC substrate by MOCVD is used as the photoelectrode, based on which an immersion detector with a quick response to 193 nm vacuum ultraviolet (VUV) light is fabricated. Impressively, under 0 V bias, the detector achieves a high responsiveness (130 mA/W) and an EQE up to 83.7% under an excitation with lower light power (45 nW), illustrating its ability to perform highly efficient detection of light signals and underwater imaging in weak-light environment. In addition, the detector also has the shortest detection wavelength when compared with the immersion photodetectors reported so far. At the same time, the simulated immersion lithography monitoring experiment shows that the detector has good real-time monitoring ability. In a word, this work provides a novel method for detecting underwater light power and can work as reference for realizing the real-time monitoring of immersive lithography light sources in future applications.

Achieving Complete Human Gingival Fibroblast Collagen Coverage on Implant Abutments through Vacuum Ultraviolet (VUV) Photofunctionalization.

The formation of a biological seal between implant abutments and the surrounding soft tissue is a preventive strategy against peri-implantitis. The aim of this study is to test the hypothesis that surfaces of prosthetic implant abutments treated with vacuum ultraviolet (VUV) light enhance the growth and function of human gingival fibroblasts. Implant abutments were treated with 172 nm VUV light for one minute. Untreated abutments were subjected as controls. Their surface properties were characterized using SEM, contact angle measurements, and chemical composition analysis. Human gingival fibroblasts were cultured on both untreated and VUV-treated abutments to evaluate cell attachment, proliferation, distribution, and collagen production. Cell detachment assays were also performed under various mechanical and chemical stimuli. After VUV treatment, implant abutments demonstrated a notable transition from hydrophobic to hydrophilic wettability. Surface element analysis revealed a considerable reduction in surface carbon and increases in oxygen and titanium elements on the VUV-treated surfaces. On day 1 of culture, 3.9 times more fibroblasts attached on VUV-treated abutments than on untreated control abutments. Fibroblastic proliferation increased 1.9-3.1 times on VUV-treated abutments, along with a significant improvement in the distribution of populating cells. Collagen production on VUV-treated abutments increased by 1.5-1.7 times. While untreated abutment surfaces showed voids and limited spread of collagen deposition, dense and full coverage of collagen was observed on VUV-treated abutments, with a great contrast in the challenging axial surface zone. Cell retention against mechanical and chemical detaching stimuli was increased 11.3 and 4.3 times, respectively, by VUV treatment. Treatment of implant abutments with VUV light for one minute resulted in a reduction of surface carbon and a transformation of the surface from hydrophobic to hydrophilic. This led to enhanced attachment, proliferation, and retention of human gingival fibroblasts, along with nearly complete collagen coverage on implant abutments. These in vitro results indicate the promising potential of utilizing VUV photofunctionalized implant abutments to enhance soft tissue reaction and sealing mechanisms.

Development of dual-beamline photoelectron momentum microscopy for valence orbital analysis.

The soft X-ray photoelectron momentum microscopy (PMM) experimental station at the UVSOR Synchrotron Facility has been recently upgraded by additionally guiding vacuum ultraviolet (VUV) light in a normal-incidence configuration. PMM offers a very powerful tool for comprehensive electronic structure analyses in real and momentum spaces. In this work, a VUV beam with variable polarization in the normal-incidence geometry was obtained at the same sample position as the soft X-ray beam from BL6U by branching the VUV beamline BL7U. The valence electronic structure of the Au(111) surface was measured using horizontal and vertical linearly polarized (s-polarized) light excitations from BL7U in addition to horizontal linearly polarized (p-polarized) light excitations from BL6U. Such highly symmetric photoemission geometry with normal incidence offers direct access to atomic orbital information via photon polarization-dependent transition-matrix-element analysis.

An experimental and computational view of the photoionization of diol-water clusters.

In the interstellar medium, diols and other prebiotic molecules adsorb onto icy mantles surrounding dust grains. Water in the ice may affect the reactivity and photoionization of these diols. Ethylene glycol (EG), 1,2-propylene glycol, and 1,3-propylene glycol clusters with water clusters were used as a proxy to study these interactions. The diol-water clusters were generated in a continuous supersonic molecular beam, photoionized by synchrotron-based vacuum ultraviolet light from the Advanced Light Source, and subsequently detected by reflectron time-of-flight mass spectrometry. The appearance energies for the detected clusters were determined from the mass spectra, collected at increasing photon energy. Clusters of both diol fragments and unfragmented diols with water were detected. The lowest energy geometry optimized conformers for the observed EG-water clusters and EG fragment-water clusters have been visualized using density functional theory (DFT), providing insight into hydrogen bonding networks and how these affect fragmentation and appearance energy. As the number of water molecules clustered around EG fragments (m/z 31 and 32) increased, the appearance energy for the cluster decreased, indicating a stabilization by water. This trend was supported by DFT calculations. Fragment clusters from 1,2-propylene glycol exhibited a similar trend, but with a smaller energy decrease, and no trend was observed from 1,3-propylene glycol. We discuss and suggest that the reactivity and photoionization of diols in the presence of water depend on the size of the diol, the location of the hydroxyl group, and the number of waters clustered around the diol.

The HLS-II alarm system optimization for removing nuisance alarms

Hefei Light Source II (HLS-II) is a vacuum ultraviolet synchrotron light source. The HLS-II alarm system is responsible for monitoring the alarms of the process variables and distributing the alarm events in time. Nuisance alarms reduce the functionality, credibility and trustworthiness of the alarm system. This paper proposes a method for design alarm deadband and delay timers to remove the nuisance alarm events to the expected ratio. An optimal deadband width is calculated to reduce the alarm events while balancing the effects of reducing the occurrence number of alarm events and increasing the duration of alarm events. If the expected ratio is not met after using the optimal deadband width, the delay timers are set additionally. The Bayesian estimation approach is used to estimate the probability that the delay timers eliminate the alarm events. This method is based on statistical properties of the process variables and can effectively remove nuisance alarm events. Two examples of the HLS-II alarm system are provided to illustrate the proposed method. In the two examples, the optimal deadband removed 99.27% and 88.92% of nuisance alarms respectively.

Giant enhancement of second harmonic generation via merging bound states in the continuum for vacuum ultraviolet radiation

Vacuum ultraviolet (VUV) light plays a crucial role in various scientific and technological fields, such as nanolithography and biomedical treatments. However, the inherent nonlinear optical coefficient of nonlinear optical crystals is typically very low, and increasing the action length is often necessary to improve the nonlinear conversion efficiency. This makes it challenging for these materials to achieve high-density optoelectronic integration at the micro-/nano-scale. In this study, we propose a design for generating coherent VUV radiation close to 175 nm using second harmonic generation (SHG) with an absolute efficiency exceeding 1.2‰ mW−1. This is achieved by merging multiple bound state in the continuum modes in a free-standing photonic crystal slab. Even with fabrication imperfections at a level lower than 10% disorder, the SHG efficiency of the samples remains robust, maintaining an efficiency of at least 2‰. This research provides a beneficial platform for generating efficient VUV light in the nanoscale.

Wave packet dynamics and control in excited states of molecular nitrogen.

Wave packet interferometry with vacuum ultraviolet light has been used to probe a complex region of the electronic spectrum of molecular nitrogen, N2. Wave packets of Rydberg and valence states were excited by using double pulses of vacuum ultraviolet (VUV), free-electron-laser (FEL) light. These wave packets were composed of contributions from multiple electronic states with a moderate principal quantum number (n ∼ 4-9) and a range of vibrational and rotational quantum numbers. The phase relationship of the two FEL pulses varied in time, but as demonstrated previously, a shot-by-shot analysis allows the spectra to be sorted according to the phase between the two pulses. The wave packets were probed by angle-resolved photoionization using an infrared pulse with a variable delay after the pair of excitation pulses. The photoelectron branching fractions and angular distributions display oscillations that depend on both the time delays and the relative phases of the VUV pulses. The combination of frequency, time delay, and phase selection provides significant control over the ionization process and ultimately improves the ability to analyze and assign complex molecular spectra.

Ultrathin metasurface on a 100 nm-thick dielectric membrane absorbs infrared rays.

Flat optics based on metasurfaces produce unprecedented two-dimensional planar optical elements that cannot be developed with naturally occurring materials. However, it remains to be shown whether metasurfaces on ultrathin dielectric membranes can be adopted in a broad range of optical elements as flat optics. Here we demonstrate that a fabricated ultrathin metasurface composed of double-sided metal structures on a 100 nm-thick SiNx membrane absorbs infrared rays with a high absorptance of 97.1% at 50.1 THz. This ultrathin metasurface and its fabrication method would be a welcome contribution to a wide range of trailblazing applications, including ultrathin absorbers for imaging and light detection and ranging (LIDAR), directivity control of thermal radiation, and polarization control of vacuum ultraviolet light.

Improved Adhesion of Direct Copper Seed Layer by Medium-Vacuum Sputtering Using Vacuum Ultraviolet Light

A sputtering method is used to form the seed layer for copper electric plating. In general, copper sputtering has weak adhesion to resin, so titanium sputter is combined to increase the adhesion strength. However, etching in the lithography process requires two types of processes, titanium and copper metal. Adhesion strength was improved by performing vacuum ultraviolet (VUV) treatment as a pretreatment for medium-vacuum sputtering. We discovered the relationship between the hydroxyl groups on the resin surface and the adhesion strength by the chemical modification XPS method. Furthermore, by XPS analysis of the peeled copper interface, the adhesion mechanism between the resin and copper due to VUV irradiation was estimated. We evaluated the absorption properties in the vacuum ultraviolet region of a thinly polished glass epoxy resin. We investigated the behavior of functional groups at the interface and considered the effect of vacuum ultraviolet light in the depth direction.

Investigating the slow component of the infrared scintillation time response in gaseous xenon

Xenon is the target material of choice in several rare event searches. The use of infrared (IR) scintillation light, in addition to the commonly used vacuum ultraviolet (VUV) light, could increase the sensitivity of these experiments. Understanding the IR scintillation response of xenon is essential in assessing the potential for improvement. This study focuses on characterizing the time response and light yield (LY) of IR scintillation in gaseous xenon for alpha particles at atmospheric pressure and room temperature. We have previously observed that the time response can be described by two components: one with a fast time constant of 𝒪(ns) and one with a slow time constant of 𝒪(μ s). This work presents new measurements that improve our understanding of the slow component. The experimental setup was modified to allow for a measurement of the IR scintillation time response with a ten times longer time window of about 3 μs, effectively mitigating the dominant systematic uncertainty of the LY measurement. We find that the slow component at about 1 bar pressure can be described by a single exponential function with a decay time of about 850 ns. The LY is found to be (6347 ± 22stat ± 400syst) ph/MeV, consistent with our previous measurement. In addition, a measurement with zero electric field along the alpha particle tracks was conducted to rule out the possibility that the slow component is dominated by light emission from drifting electrons or the recombination of electrons and ions.

Efficient photo-dissociation-induced production of hydrogen radicals using vacuum ultraviolet light from a laser-produced plasma

One of the critical issues in lithography using extreme ultraviolet (EUV) light is tin contamination of the EUV collector mirrors in the tin-based LPP-EUV light source. The contamination can be removed by the reaction of tin atoms with hydrogen radicals producing stannane (SnH4), which is gaseous at the normal temperature. Hydrogen radicals can be produced from hydrogen molecules through photo-dissociation and photo-ionization induced by broadband radiation emitted from the EUV light source. In this work, an efficient production of hydrogen radical using vacuum ultraviolet (VUV) light emitted from laser-produced high-Z plasma is experimentally demonstrated. A two-dimensional radiation hydrodynamic simulation, coupled with photoionization and photo-dissociation cross sections, also shows the efficient hydrogen radical production by increased VUV light emission, as observed in the experiment.