The Al/Sm2Ce2O7/ITO (Al/SCO/ITO) structure resistive random access memory (RRAM) was prepared using RF magnetron sputtering, and its resistive switching (RS) behaviors were systematically investigated. The memory exhibited a high switching cycle of 1031, along with set/reset voltages of −1.55/0.53 V and a Ron/Roff ratio exceeding 102. This high performance can be attributed to the presence of intrinsic oxygen vacancies in the defective fluorite structure, accounting for 34.44 % of the vacancies. This vacancy percentage can be increased to 41.97 % by simultaneously transforming Ce4+ to Ce3+ ions through annealing treatment, thereby releasing additional oxygen vacancies. Despite this increase, there remains a sufficient window (Ron/Roff > 10) to distinguish between the high-resistance state (HRS) and low-resistance state (LRS) of the SCO device. Furthermore, the device, when subjected to post-metal annealing (PMA), exhibits a high endurance of up to 1815 cycles, a set/reset voltages of −2.19/1.31 V, a Ron/Roff ratio of >10, and a retention time of over 104 s at 25 °C and 85 °C. However, it is important to note that PMA-treated device requires a higher forming voltage due to the formation of a thicker AlOx layer. This study highlights the potential of Al/SCO/ITO memory devices for RRAM applications.
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