Use Of TCAD Research Articles

TCAD modeling of neuromorphic systems based on ferroelectric tunnel junctions

A new compact model for HfO2-based ferroelectric tunnel junction (FTJ) memristors is constructed based on detailed physical modeling using calibrated TCAD simulations. A multi-domain configuration of the ferroelectric material is demonstrated to produce quasi-continuous conductance of the FTJ. This behavior is demonstrated to enable a robust spike-timing-dependent plasticity-type learning capability, making FTJs suitable for use as synaptic memristors in a spiking neural network. Using both TCAD–SPICE mixed-mode and pure SPICE compact model approaches, we apply the newly developed model to a crossbar array configuration in a handwritten digit recognition neuromorphic system and demonstrate an 80% successful recognition rate. The applied methodology demonstrates the use of TCAD to help develop and calibrate SPICE models in the study of neuromorphic systems.

Modeling and Simulation of Biaxial Strained P-MOSFETs: Application to a Single and Dual Channel Heterostructure

The objectives of this work are focused on the application of strained silicon on MOSFET transistor. To do this, impact and benefits obtained with the use of strained silicon technology on p-channel MOSFETs are presented. This research attempt to create conventional and two-strained silicon MOSFETs fabricated from the use of TCAD, which is a simulation tool from Silvaco. In our research, two-dimensional simulation of conventional MOSFET, biaxial strained PMOSFET and dual channel strained P-MOSFET has been achieved to extract their characteristics. ATHENA and ATLAS have been used to simulate the process and validate the electronic characteristics. Our results allow showing improvements obtained by comparing the three structures and their characteristics. The maximum of carrier mobility improvement is achieved with percentage of 35.29 % and 70.59 % respectively, by result an improvement in drive current with percentage of 36.54 % and 236.71 %, and reduction of leakage current with percentage of 59.45 % and 82.75 %, the threshold voltage is also enhaced with percentage of: 60 % and 61.4%. Our simulation results highlight the importance of incorporating strain technology in MOSFET transistors.

Trench-type deep N-well dual guard ring for the suppression of substrate noise coupling

This article presents a study on the isolation performance of the trench-type deep n-well (DNW) dual guard ring (GR) and its effect on the suppression of the substrate digital noise coupling on a low noise amplifier (LNA) based on measurement and TCAD simulation. The trench-type DNW dual GR, in which the DNW is formed beneath the ring-shaped n-well region only, can be adopted for protecting the noise-sensitive analog/RF circuits or circuit blocks against the substrate noise. An in-depth analysis on the performance of the trench-type DNW was carried out based on both measurement and a heavy use of TCAD. The results show that the trench-type DNW dual GR exhibits comparable isolation to that of the pocket-type DNW dual GR at high frequency regime. The effect of various GR dimension parameters and GR bias conditions on the GR isolation performance was also investigated and analyzed. Furthermore, the trench-type DNW dual GR was applied to a 5.8-GHz LNA and its effect on the suppression of the substrate digital noise coupling was studied for various digital noise conditions and GR bias schemes. © 2010 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2011. © 2011 Wiley Periodicals, Inc.

An Exploratory Study of the Effects of Time Compressed Animated Delivery Multimedia Technology on Student Learning in Reproductive Physiology

Two experiments examined the effects of a multimedia technology referred to as “Time Compressed Animated Delivery” (TCAD), on student learning in a junior-level reproductive physiology course. In experiment 1, participating students received one of two presentations of the same instructional material: TCAD and a lecture captured on video. At the completion of each presentation a test was administered and group mean test scores computed and compared. The results were statistically significant (df = 362, t = 10.623, p < 0.05), favoring the TCAD treatment group. The effect size estimate was 1.14. In experiment 2, student learning from three groups were compared on the same reproductive physiology unit used in experiment 1: (1) TCAD, (2) TCAD without the 3-D component, and (3) video-lecture. After removal of three poor functioning items, a one-way analysis of variance was computed. The results were statistically significant (df = 2, F = 2.351, p < 0.10). Results of post hoc comparisons showed that differences in mean test scores between the TCAD and control groups were statistically significant (p < 0.05). The effect size estimate was 0.25. These findings provide preliminary evidence for use of TCAD.