Extensive research is underway to improve the thermoelectric properties of materials by enhancing the figure of merit (ZT). In this study, we are investigating the thermoelectric properties of MoS2/MoTe2 and MoS2/MoSe2 lateral heterostructures (LH-S) under the influence of external magnetic fields (EMF) and transverse electric fields (TEF). We employ the non-equilibrium Green's function (N-EGF) and tight-binding (TB) methods for our analysis. The results obtained indicate that the ZT for MoS2-MoTe2 and MoS2-MoSe2 LH-S enhanced with an increase in the TEF. The ZT of MoS2-MoSe2 LH-S increases near room temperature, while the ZT of MoS2-MoTe2 LH-S increases with an increase in EMF across the entire temperature range. Additionally, the ZT for MoS2-MoSe2 LH-S increases with an increase in the nanoribbon width, whereas for MoS2-MoTe2 LH-S, it decreases. The results reveal that the semiconductor type of MoS2-MoSe2 and MoS2-MoTe2 LH-S changes from n-type to p-type when subjected to EMF and transverse TEF. The examination of the temperature dependence of ZT in the presence of TEF and EMF for MoS2-MoTe2 and MoS2-MoSe2 LH-S indicates that these structures are highly promising candidates for use in electrical devices.
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