Indium selenide, In2Se3, has recently attracted growing interest due to its remarkable properties, including room temperature ferroelectricity, outstanding photoresponsivity, and exotic in-plane ferroelectricity, which open up new regimes for next generation electronics. In2Se3 also provides the important advantage of tuning the electrical properties of ultrathin layers with an external electrical and magnetic field, making it a potential platform to study novel two-dimensional physics. Yet, In2Se3 has many different polymorphs, and it has been challenging to synthesize a single phase material, especially using scalable growth methods, as needed for technological applications. We recently reported the growth of twin-free ultrathin layers of In2Se3 prepared by a diffusion driven molecular beam epitaxy approach, and twin-free Bi2Se3 layers grown on these unique virtual substrates. In this paper, we use aberration-corrected scanning transmission electron microscopy to characterize the microstructure of these materials. We emphasize features of the In2Se3 layer and In2Se3/InP interface which provide evidence for understanding the growth mechanism that leads to the twin-free and single phase In2Se3. We also show that this In2Se3 layer provides an ideal substrate for growth of twin-free Bi2Se3 with a nearly defect-free interface. This approach for growing high-quality twin-free single phase two-dimensional crystals using InP substrates is likely to be applicable to other technologically important materials.
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