Unique In-plane Anisotropy Research Articles

2D Layers of Group VA Semiconductors: Fundamental Properties and Potential Applications.

Members of the 2D group VA semiconductors (phosphorene, arsenene, antimonene, and bismuthine) present a new class of 2D materials, which are recently gaining a lot of research interest. These materials possess layered morphology, tunable direct bandgap, high charge carrier mobility, high stability, unique in-plane anisotropy, and negative Poisson's ratio. They prepare the ground for novel and multifunctional applications in electronics, optoelectronics, and batteries. The most recent analytical and empirical developments in the fundamental characteristics, fabrication techniques, and potential implementation of 2D group VA materials in this review, along with presenting insights and concerns for the field's future are analyzed.

Large In-Plane Anisotropic Terahertz Emission Induced by Asymmetric Polarization in Low-Symmetric PdSe2.

Palladium diselenide (PdSe2) exhibits air stability, low symmetry, and high carrier mobility, resulting in unique in-plane anisotropy for polarized optoelectronic devices. However, the relationship of the symmetry and the terahertz (THz) radiation remains elusive yet significant for both the THz source in technology and nonlinear optical physics in science. Herein, we observed large in-plane anisotropic THz radiation from multilayer PdSe2 under femtosecond laser excitation. The THz emission demonstrates 2α dependence on the optical polarization angle from the resonant optical rectification combined with a background from the photocarrier acceleration under the surface depletion field. Interestingly, the in-plane THz emission along and perpendicular to the puckered direction demonstrates large anisotropy. Furthermore, the THz time-domain signals exhibit reversed polarities along the positive and negative puckered directions. This asymmetric polarization could relate to the bonding of Pd-Se, resulting in the unidirectional photon-induced current. Our results bridge the gap between the low-symmetry two-dimensional materials and the THz technology, which could promote the development of THz-polarized devices based on low-symmetry layered materials.

Simulations of Quantum Transport in Sub-5-nm Monolayer Phosphorene Transistors

Phosphorene is a promising channel material for next-generation electronics, due to its unique in-plane anisotropy, large density of states near the valence-band maximum, and high carrier mobility. Using $a\phantom{\rule{0}{0ex}}b$ $i\phantom{\rule{0}{0ex}}n\phantom{\rule{0}{0ex}}i\phantom{\rule{0}{0ex}}t\phantom{\rule{0}{0ex}}i\phantom{\rule{0}{0ex}}o$ quantum transport simulations, the authors investigate very small, double-gated MOSFETs based on monolayer phosphorene. It is predicted that these transistors can fulfill industrial requirements for ON current, delay time, and power dissipation until the gate length is scaled down to 2 nm.

Air-Stable In-Plane Anisotropic GeSe2 for Highly Polarization-Sensitive Photodetection in Short Wave Region.

In-plane anisotropic layered materials such as black phosphorus (BP) have emerged as an important class of two-dimensional (2D) materials that bring a new dimension to the properties of 2D materials, hence providing a wide range of opportunities for developing conceptually new device applications. However, all of recently reported anisotropic 2D materials are relatively narrow-bandgap semiconductors (<2 eV), and there has been no report about this type of materials with wide bandgap, restricting the relevant applications such as polarization-sensitive photodetection in short wave region. Here we present a new member of the family, germanium diselenide (GeSe2) with a wide bandgap of 2.74 eV, and systematically investigate the in-plane anisotropic structural, vibrational, electrical, and optical properties from theory to experiment. Photodetectors based on GeSe2 exhibit a highly polarization-sensitive photoresponse in short wave region due to the optical absorption anisotropy induced by in-plane anisotropy in crystal structure. Furthermore, exfoliated GeSe2 flakes show an outstanding stability in ambient air which originates from the high activation energy of oxygen chemisorption on GeSe2 (2.12 eV) through our theoretical calculations, about three times higher than that of BP (0.71 eV). Such unique in-plane anisotropy and wide bandgap, together with high air stability, make GeSe2 a promising candidate for future 2D optoelectronic applications in short wave region.

Chalcogenide glass waveguide-integrated black phosphorus mid-infrared photodetectors

Black phosphorus (BP) is a promising 2D material that has unique in-plane anisotropy and a 0.3 eV direct bandgap, making it an attractive material for mid-IR photodetectors. So far, waveguide integrated BP photodetectors have been limited to the near-IR on top of Si waveguides that are unable to account for BP’s crystalline orientation. In this work, we employ mid-IR transparent chalcogenide glass (ChG) both as a broadband mid-IR transparent waveguiding material to enable waveguide-integration of BP detectors, and as a passivation layer to prevent BP degradation during device processing as well as in ambient atmosphere post-fabrication. Our ChG-on-BP approach not only leads to the first demonstration of mid-IR waveguide-integrated BP detectors, but also allows us to fabricate devices along different crystalline axes of BP to investigate, for the first time, the impact of in-plane anisotropy on photoresponse of waveguide-integrated devices. The best device exhibits responsivity up to 40 mA W−1 and noise equivalent power as low as 30 pW Hz−1/2 at 2185 nm wavelength. We also found that photodetector responsivities changed by an order of magnitude with different BP orientations. This work validates BP as an effective photodetector material in the mid-IR, and demonstrates the power of the glass-on-2D-material platform for prototyping of 2D material photonic devices.

Recent progress in 2D group-VA semiconductors: from theory to experiment.

Phosphorene, an emerging two-dimensional material, has received considerable attention due to its layer-controlled direct bandgap, high carrier mobility, negative Poisson's ratio and unique in-plane anisotropy. As cousins of phosphorene, 2D group-VA arsenene, antimonene and bismuthene have also garnered tremendous interest due to their intriguing structures and fascinating electronic properties. 2D group-VA family members are opening up brand-new opportunities for their multifunctional applications encompassing electronics, optoelectronics, topological spintronics, thermoelectrics, sensors, Li- or Na-batteries. In this review, we extensively explore the latest theoretical and experimental progress made in the fundamental properties, fabrications and applications of 2D group-VA materials, and offer perspectives and challenges for the future of this emerging field.

Exotic Physics and Chemistry of Two-Dimensional Phosphorus: Phosphorene.

Phosphorene, the monolayer form of black phosphorus, is the most recent addition to graphene-like van der Waals two-dimensional (2D) systems. Due to its several interesting properties, namely its tunable direct band gap, high carrier mobility, and unique in-plane anisotropy, it has emerged as a promising candidate for electronic and optoelectronic devices. Phosphorene (Pn) reveals a much richer phase diagram than graphene, and it comprises the two forms namely the stapler-clip like (black Pn, α form) and chairlike (blue Pn, β form) structures. Regardless of its favorable properties, black Pn suffers from instability in oxygen and water, which limits its successful applications in electronic devices. In this Perspective, the cause of structural diversity of Pn, which leads to different properties of both black and blue Pn, is discussed. We provide possible solutions for protecting phosphorene from chemical degradation and its applications in the field of energy storage namely for Li and Na ion batteries.

New properties with old materials: Layered black phosphorous

Layered black phosphorous (BP), its tunable direct bandgap, higher carrier mobility and unique in-plane anisotropy, enables it to a promising candidate in design and optimization of electronics and optoelectronic devices with excellent performance. Although recent studies and perspectives aim at bringing this material to a level of maturity, the lack of wafer scale production and the surface reactivity of BP hindered a fully industrial processes. Here, we addressed the probable solutions to overcome these challenges black phosphorous was facing.

Lateral black phosphorene P–N junctions formed via chemical doping for high performance near-infrared photodetector

Black phosphorene (BP), a newly discovered elemental two-dimensional material, is attractive for optoelectronic and photonic applications because of its unique in-plane anisotropy, thickness-dependent direct bandgap and high carrier mobility. Since its discovery, black phosphorene has become an appealing candidate well-suited for polarization-resolved near- and mid-infrared optoelectronics due to its relative narrow bandgap and asymmetric structure. Here, we employ benzyl viologen (BV) as an effective electron dopant to part of the area of a (p-type) few-layer BP flake and achieve an ambient stable, in-plane P–N junction. Chemical doping with BV molecules modulates the electron density and allows acquiring a large built-in potential in this in-plane BP P–N junction, which is crucial for achieving high responsivity photodetectors and high quantum efficiency solar cells. As a demonstrative example, by illuminating it with a near-infrared laser at 1.47µm, we observe a high responsivity up to ~180mA/W with a rise time of 15ms, and an external quantum efficiency of 0.75%. Our strategy for creating environmentally stable BP P–N junction paves the way to implementing high performance BP phototransistors and solar cells, which is also applicable to other 2D materials.

Dynamic Structural Evolution of Metal–Metal Bonding Network in Monolayer WS2

Layered transition metal dichalcogenides (TMDs) exist in a range of crystal phases with distinct electronic character. Some crystal phases are known to exhibit unique in-plane anisotropy characterized by a periodic distortion of the lattice and a formation of metal–metal bonding network. Here, we report in situ observation of dynamic structural evolution in the one-dimensional zigzag chains of single layer WS2 induced by electron beam irradiation. Metastable zigzag chains of tungsten atoms are found to undergo reorganization of metal–metal bonds, resulting in emergence of tetramer clusters and zigzag chains with a new orientation. Our first-principles calculations reveal a small (∼0.1 eV per formula unit) activation energy barrier for monolayer WS2 zigzag chain reorientation and a metastable transition state in the form of tetramer clusters. We further show that local tetramer clusters can be induced and stabilized by local electronic charging effects. The formation of local tetramer clusters indicate tha...

Tunable damping, saturation magnetization, and exchange stiffness of half-Heusler NiMnSb thin films

The half-metallic half-Heusler alloy NiMnSb is a promising candidate for applications in spintronic devices due to its low magnetic damping and its rich anisotropies. Here we use ferromagnetic resonance (FMR) measurements and calculations from first principles to investigate how the composition of the epitaxially grown NiMnSb influences the magnetodynamic properties of saturation magnetization $M_S$, Gilbert damping $\alpha$, and exchange stiffness $A$. $M_S$ and $A$ are shown to have a maximum for stoichiometric composition, while the Gilbert damping is minimum. We find excellent quantitative agreement between theory and experiment for $M_S$ and $\alpha$. The calculated $A$ shows the same trend as the experimental data, but has a larger magnitude. Additionally to the unique in-plane anisotropy of the material, these tunabilities of the magnetodynamic properties can be taken advantage of when employing NiMnSb films in magnonic devices.