One-dimensional β-Ga2O3 is expected for potential applications in electronics, sensors, and optoelectronics. Gallium hydroxide (GaO(OH)) with different Cu doping was prepared via the hydrothermal method using liquid metallic gallium and copper chloride dihydrate (CuCl2·2H2O) as the starting materials. The material was then transformed to β-Ga2O3 after calcination at 800 °C. SEM images reveal that the obtained powders are well dispersed and have a uniform rod morphology with a length of 13–14 μm and a width of approximately 500 nm. The addition of Cu ion significantly improves the surface morphology of the rod and effectively inhibits the generation of intrinsic oxygen vacancies. And the relative Fermi energy level of Cu-doped β-Ga2O3 undergoes a notable shift from 2.81 eV to 1.25 eV, suggesting the formation of p-type conductivity. Meanwhile, the PL spectra of the Cu-doped samples exhibit emission peaks in the red wavelength range, which is expected for new applications.