Underlying GaN Layer Research Articles

Analysis of the mechanisms by which sputtered AlN nucleation layers enhance the performance of red InGaN-based LEDs

This work proposed to modulate the strain of underlying GaN layers using different thicknesses of sputtered AlN nucleation layer to achieve long-wavelength red InGaN mini-light-emitting diodes (mini-LEDs). The increase in thickness of sputtered AlN from 15 nm to 60 nm could reduce the compressive strain in epitaxial GaN layers, which led to a shift in the peak wavelength of InGaN LEDs ranging from 633 nm to 656 nm at 1 A/cm2. However, a significant decrease in external quantum efficiency (EQE) was observed when the sputtered AlN thickness was increased from 45 nm to 60 nm. We found that the EQE and peak wavelength (PW) of the red mini-LEDs with 45-nm sputtered AlN at 1 A/cm2 were 8.5% and 649 nm, respectively. The study revealed that varying the thickness of AlN nucleation layers could extend the emission of red InGaN mini-LEDs toward longer wavelengths with a slight EQE loss.

Boosting the efficiency of InGaN-based green LEDs grown on Si through buffer strain engineering

InGaN-based micro-light-emitting diodes (LEDs) grown on Si have gained tremendous interest for full-color displays. Strain management is a key challenge for the epitaxial growth of InGaN-based long-wavelength LEDs on Si because the accumulated compressive strain can severely limit In incorporation and degrade the quality of InGaN multi-quantum wells (MQWs) when the conventional Al-composition step-graded AlN/AlGaN buffer is used for strain control. In this work, we demonstrate a promising approach to effectively reduce the in-plane residual compressive stress of GaN by using an AlN single-layer buffer. The in-plane lattice parameter of the GaN underlayer was increased from 3.183 to 3.189 Å with the residual compressive stress at room temperature reduced from 0.37 to ∼0 GPa, which significantly improved the In incorporation of InGaN MQWs and extended the photoluminescence wavelength from 510 to 550 nm. A remarkably high internal quantum efficiency of 78% was thus achieved for the as-grown InGaN-based green LEDs on Si. This work paves the way for the growth of high-efficiency InGaN-based long-wavelength micro-LEDs.

Change in Growth Mode of BGaN Layers Grown on GaN

A change in the growth mode from Stranski–Krastanov one, which is characteristic of MOCVD grown GaN, to the laterally grown BGaN in the Volmer–Weber growth mode is described. This change in growth is evidenced by scanning electron microscopy (SEM) and transmission electron microscopy (TEM) images of BGaN grown on GaN at high temperatures. It is postulated on the basis of SIMS and XRD results that this change in growth is initiated by the transfer of boron atoms from gallium substitutional to interstitial. The proposed mechanism for the observed growth change is related to the generation of nitrogen interstitials and subsequent reactions with boron interstitials, which result in the formation of a BN layer at the growth front. The observed large change in the growth mode is due to a lattice mismatch between the grown BGaN and the atomic layer of BN and stays behind the change to the Volmer–Weber growth mode. The consequence of the Volmer–Weber growth mode is the textural layer of BGaN. The textural character of this material is associated with large voids between grown BGaN “plates”. These large voids are responsible for the termination of threading dislocations propagating in the c-direction. It is also postulated that the blocked threading dislocations from the GaN underlayer and laterally grown BGaN layers along the a-directions are responsible for the decrease in defect concentration within these layers.

Lattice parameters of ScxAl1−xN layers grown on GaN(0001) by plasma-assisted molecular beam epitaxy

An accurate knowledge of lattice parameters of ScxAl1−xN is essential for understanding the elastic and piezoelectric properties of this compound as well as for the ability to engineer its strain state in heterostructures. Using high-resolution x-ray diffractometry, we determine the lattice parameters of 100-nm-thick undoped ScxAl1−xN layers grown on GaN(0001) templates by plasma-assisted molecular beam epitaxy. The Sc content x of the layers is measured independently by both x-ray photoelectron spectroscopy and energy-dispersive x-ray spectroscopy, and it ranges from 0 to 0.25. The in-plane lattice parameter of the layers linearly increases with increasing x, while their out-of-plane lattice parameter remains constant. Layers with x≈0.09 are found to be lattice matched to GaN, resulting in a smooth surface and a structural perfection equivalent to that of the GaN underlayer. In addition, a two-dimensional electron gas is induced at the ScxAl1−xN/GaN heterointerface, with the highest sheet electron density and mobility observed for lattice-matched conditions.

Study of Pore Geometry and Dislocations in Porous GaN Based Pseudo-Substrates Using TEM

Nitride based light emitting diodes (LEDs) have demonstrated very high efficiency in the blue and green wavelength ranges. For full color LED based displays, efficient and small sized devices emitting in the three primary colors - red, green and blue are required. While phosphide based red LEDs are highly efficient, high surface recombination velocities limit their scaling to small dimensions. Nitride emitters can be scaled to smaller sizes, however for longer emission wavelength such as yellow, orange, and red, the indium content in the active region of the devices needs to be >30%. Due to the large lattice mismatch between GaN and InN, the needed high indium content introduces a large strain in the structure, often resulting in poor material quality. Recently, a novel technique to mitigate this lattice mismatch induced strain was demonstrated with the use of compliant porous GaN underlayer based substrates. In our previous reports, we have discussed the surface morphology, strain state evolution and device demonstrations using these substrates, however a detailed discussion regarding the pore cross-sections and dislocation propagation for each generation of these porous GaN substrates was yet to be reported. In this work, we will discuss the cross-sectional transmission electron microscopy (TEM) results of these substrates across multiple stages of the substrate technology development.

Demonstration of device-quality 60% relaxed In0.2Ga0.8N on porous GaN pseudo-substrates grown by PAMBE

Achieving high-quality, relaxed InGaN substrates for longer-wavelength light emitting diodes (LEDs) is of great interest for the development of micro-LED based display technology. This work demonstrates molecular beam epitaxy (MBE)-grown In0.2Ga0.8N with a strain relaxation of 60% corresponding to an equivalently fully relaxed In composition of 12%. This was done by growing on a GaN-on-porous GaN pseudo-substrate (PS). The surface morphology of this film was found to be free of V-defects on the surface and with a threading dislocation density comparable to that of the GaN layers beneath. While InGaN grown on planar GaN-on-sapphire substrates remained nearly strained to the GaN underlayer, InGaN grown under identical conditions on PS displayed elastic-like relaxation. Furthermore, an increase in indium (In) composition was observed for the InGaN grown on PS. Where past work of InGaN grown on porous GaN PS by metalorganic chemical vapor deposition also resulted in relaxed InGaN templates suitable for device application, the surfaces of these relaxed films exhibited V-defects for thicker layers. Employing MBE, thicker films with higher In composition can be achieved with smooth surface morphology, thus enabling pseudo-substrates with a wide range of lattice constants. These pseudo-substrates of varying in-plane lattice constant are attractive for III-nitride based optoelectronics, particularly for green, amber, and red micro-LEDs.

Patterned III‐Nitrides on Porous GaN: Extending Elastic Relaxation from the Nano‐ to the Micrometer Scale

Investigations of the use of patterned porous GaN underlayers to achieve elastic relaxation of lattice‐mismatched top layers such as InGaN and AlGaN are reviewed. Thereby, the degree of relaxation of the top layers increases with the porosity and associated decrease in mechanical hardness of the porous GaN underlayers as well as with decreasing pattern size and increase in thickness of the lattice‐mismatched top layers, following the trends observed for nanostructures. Micrometer‐sized, high‐fill‐factor GaN‐on‐porous‐GaN tile arrays are used as universal substrate for the deposition of InGaN and AlGaN. Due to the elastic nature of the relaxation process, the threading dislocation density in the epitaxial material grown on top of the GaN‐on‐porous‐GaN tiles is equivalent to that in the GaN base material. InGaN and AlGaN layers grown on top of relaxed or partially relaxed InGaN or AlGaN underlayers by metal–organic chemical vapor deposition display a higher indium or aluminum content compared to their counterparts deposited on coloaded planar GaN reference wafers due to the decreased lattice mismatch. First applications of the patterned porous GaN‐based technology for optoelectronic and electronic devices are presented and serve as a pathway toward future implementations.

Role of Metal Vacancies in the Mechanism of Thermal Degradation of InGaN Quantum Wells.

In this work, we study the thermal degradation of In-rich InxGa1-xN quantum wells (QWs) and propose explanation of its origin based on the diffusion of metal vacancies. The structural transformation of the InxGa1-xN QWs is initiated by the formation of small initial voids created due to agglomeration of metal vacancies diffusing from the layers beneath the QW. The presence of voids in the QW relaxes the mismatch stress in the vicinity of the void and drives In atoms to diffuse to the relaxed void surroundings. The void walls enriched in In atoms are prone for thermal decomposition, what leads to a subsequent disintegration of the surrounding lattice. The phases observed in the degraded areas of QWs contain voids partly filled with crystalline In and amorphous material, surrounded by the rim of high In-content InxGa1-xN or pure InN; the remaining QW between the voids contains residual amount of In. In the case of the InxGa1-xN QWs deposited on the GaN layer doped to n-type or on unintentionally doped GaN, we observe a preferential degradation of the first grown QW, while doping of the underlying GaN layer with Mg prevents the degradation of the closest InxGa1-xN QW. The reduction in the metal vacancy concentration in the InxGa1-xN QWs and their surroundings is crucial for making them more resistant to thermal degradation.

Quantitative investigation of indium distribution in InN wetting layers and dots grown by metalorganic chemical vapor deposition

InN dots grown by metalorganic chemical vapor deposition were analyzed using atom probe tomography and transmission electron microscopy. A dot was found to be composed of pure InN at the core with a sharp interface with its underlying GaN layer and a more diffuse interface with its top GaN cap layer. Both techniques revealed the hexagonal truncated pyramid shape of the dots. APT has been used in the analysis of the wetting layers formed between the quantum dots. The fractional coverage appeared to saturate at longer growth times, with the highest fraction of monolayer coverage found to be 0.6.

633-nm InGaN-based red LEDs grown on thick underlying GaN layers with reduced in-plane residual stress

This work investigates the influence of residual stress on the performance of InGaN-based red light-emitting diodes (LEDs) by changing the thickness of the underlying n-GaN layers. The residual in-plane stress in the LED structure depends on the thickness of the underlying layer. Decreased residual in-plane stress resulting from the increased thickness of the underlying n-GaN layers improves the crystalline quality of the InGaN active region by allowing for a higher growth temperature. The electroluminescence intensity of the InGaN-based red LEDs is increased by a factor of 1.3 when the thickness of the underlying n-GaN layer is increased from 2 to 8 μm. Using 8-μm-thick underlying n-GaN layers, 633-nm-wavelength red LEDs are realized with a light-output power of 0.64 mW and an external quantum efficiency of 1.6% at 20 mA. The improved external quantum efficiency of the LEDs can be attributed to the lower residual in-plane stress in the underlying GaN layers.

Energy transport analysis in a Ga0.84In0.16N/GaN heterostructure using microscopic Raman images employing simultaneous coaxial irradiation of two lasers

Anisotropic heat transport in a Ga0.84In0.16N/GaN-heterostructure on a sapphire substrate is observed from microscopic Raman images obtained by utilizing coaxial irradiation of two laser beams, one for heating (325 nm) in the GaInN layer and the other for signal probing (325 nm or 532 nm). The increase in temperatures of the GaInN layer and the underlying GaN layer is probed by the 325-nm and 532-nm lasers, respectively, by analyzing the shift in the Raman peak energy of the higher energy branch of E2 modes. The result reveals that energy diffuses across a considerable length in the GaInN layer, whereas the energy transport in the perpendicular direction to the GaN layer is blocked in the vicinity of misfit dislocations on the heterointerface. This simultaneous irradiation of two lasers for heat generation and probing is effective in the microscopic analysis of energy transport through heterointerfaces.

Role of Underlayer for Efficient Core-Shell InGaN QWs Grown on m-plane GaN Wire Sidewalls.

Different types of buffer layers such as InGaN underlayer (UL) and InGaN/GaN superlattices are now well-known to significantly improve the efficiency of c-plane InGaN/GaN-based light-emitting diodes (LEDs). The present work investigates the role of two different kinds of pregrowth layers (low In-content InGaN UL and GaN UL namely "GaN spacer") on the emission of the core-shell m-plane InGaN/GaN single quantum well (QW) grown around Si-doped c̅-GaN microwires obtained by silane-assisted metal organic vapor phase epitaxy. According to photo- and cathodoluminescence measurements performed at room temperature, an improved efficiency of light emission at 435 nm with internal quantum efficiency >15% has been achieved by adding a GaN spacer prior to the growth of QW. As revealed by scanning transmission electron microscopy, an ultrathin residual layer containing Si located at the wire sidewall surfaces favors the formation of high density of extended defects nucleated at the first InGaN QW. This contaminated residual incorporation is buried by the growth of the GaN spacer and avoids the structural defect formation, therefore explaining the improved optical efficiency. No further improvement is observed by adding the InGaN UL to the structure, which is confirmed by comparable values of the effective carrier lifetime estimated from time-resolved experiments. Contrary to the case of planar c-plane QW where the improved efficiency is attributed to a strong decrease of point defects, the addition of an InGaN UL seems to have no influence in the case of radial m-plane QW.

Characteristics of Ni/Au/Ni/Au ohmic contact in a p-AlGaN/GaN semiconductor

The low-resistance NiAu/Ni/Au ohmic contact in p-type AlGaN/GaN semiconductor was carefully investigated by electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) after two-step annealing at 550 and 750°C. It is shown that complicate double-direction diffusion and reaction occurred in the metal layer and underlying GaN layer. The four metal stacks of Ni/Au/Ni/Au turned into almost one layer and an intimate relationship established at NiAu/GaN boundary, which should play a primary role in ohmic contact to reduce the contact barrier. At the intimate interface, the metal layer close to the contact was enriched with Ga and Au, and the GaN upper layer was metalized by Au and Ni. Numerous Ni atoms were oxidized and formed dispersive NiO nanoclusters in the metal layer, which might have a hindering effect on upward migration of Ga atoms. Dislocations connected with the contact boundary absorbed interstitial atoms of Au or Ni may serve as channels for current carrier transportation. Thus, a low-resistance p-GaN ohmic contact can be obtained by the above combination of these microstructural characteristics.

Improvement of GaN crystalline quality by SiNx layer grown by MOVPE

In this work the mechanism which helps to reduce the dislocation density by deposition of a SiNx interlayer is discussed. It is shown that the dislocation reduction by SiNx interlayer deposition is influenced by dislocation density in the underlying GaN layers. The SiNx interlayer is very effective when the original dislocation density is high, while in the case of lower dislocation density the deposition of SiNx is not effective for crystal quality improvement. Although it is widely accepted that SiNx serves as a barrier for dislocation propagation, similarly to the enhanced lateral overgrowth method, it is shown that after masking the SiNx deposition cannot be the dominant dislocation reduction mechanism. The most probable mechanism is the annihilation of bended neighbouring dislocations during the coalescence of 3D islands. The SiNx layer cannot serve as a barrier for dislocations, since it is probably dissolved during the following GaN growth and dissolved Si atoms are incorporated into the above-grown GaN layer which stimulates the 3D island formation. Then the use of the SiNx interlayer for dislocation reduction is recommended only for the improvement of layers with a high dislocation density. On the other hand, the PL signal was strongly enhanced for both low and high dislocation density structures with the SiNx interlayer, suggesting that the interlayer might help to suppress the nonradiative recombination in subsequent GaN that is not related to the dislocation density, which remained the same. But its origin has to be studied further.

High Resolution Investigation on the NiAu Ohmic Contact to p-AlGaN|GaN Heterostructure

The low-resistance ohmic contact NiAu|p-type AlGaN|GaN was carefully investigated by high resolution electron microscope (HRTEM) and X-ray photoelectron spectroscopy (XPS) after two-step annealing at 550 and 750°C. It is shown that complicate double-direction diffusion and reaction occur in the metal layer and underlying GaN layer. The stacks of Ni|Au|Ni|Au turn into one alloyed layer and an intimate relationship establishes at the NiAu|GaN boundary which should play a primary role in ohmic contact to lower the contact barrier. A great part of Ni is oxidized as dispersive NiO nanoclusters in the metal layer, which might have an effect to hinder Ga atoms migrating upward. So at the intimate interface, the metal layer close to the contact enriched with Ga and Au, and the GaN upper layer metallized by Au and Ni should reduce the lattice mismatch and the contact barrier. Dense vacancies in the upper GaN layer and dislocations connected with the contact boundary also have the effects to improve the current carrier transportation. So the low ohmic contact to p-GaN should be obtained by the combination of these microstructural characteristics.

Efficient ab initio plus analytic calculation of the effect of GaN layer tensile strain in AlGaN/GaN heterostructures

We have addressed the existing ambiguity regarding the effect of tensile strain in the underlying GaN layer on AlxGa1−xN/GaN heterostructure properties. The bandgaps and band-offsets for AlxGa1−xN on strained GaN were first computed using density functional theory (DFT), in the generalized gradient approximations (GGA) and hybrid functional Gaussian–Perdew–Burke–Ernzerhof (Gau–PBE) regimes. We propose a simple model to relate the GGA and Gau–PBE bandgaps, which is used to determine the realistic bandgaps of strained AlGaN. The bandgaps and band-offsets from the DFT calculations are then used to analytically calculate the two-dimensional electron gas density in an AlxGa1−xN/GaN hetero-interface. Our bandstructure calculations show that it is not possible to induce significant change in band-offsets through strain in the GaN layer. The charge-density calculations indicate that such strain can, however, modulate the polarization charge and thereby enhance the 2DEG density at the AlGaN/GaN interface substantially.

Effects of indium flow rate on the structural, morphological, optical and electrical properties of InGaN layers grown by metal organic chemical vapour deposition

InGaN/GaN heterostructures were grown on c-plane sapphire substrates using metal organic chemical vapour deposition by varying the trimethylindium flow rate as 7, 10 and 14 μmol/min. The structural, morphological, optical and electrical properties of InGaN layers were investigated. Crystalline quality, dislocation densities comprising of screw and edge types in InGaN and GaN layer have been analyzed using High-Resolution X-ray Diffractometer (HRXRD). The composition of Indium (In) in the InGaN layers was estimated around 8–10% which was found to be dependent on the In flow rate. The strain between InGaN and underlying GaN layer have been analyzed through reciprocal space mapping studies along the (1 0–1 5) plane in InGaN/GaN heterostructures. The features of V and trench defects were observed using scanning electron microscopy and atomic force microscopy, respectively. The V and trench defect density has been correlated with the pre-existing threading dislocation density estimated using HRXRD measurements. Also the trench defects were observed to be a coalescence of V defects in InGaN layers. The photoluminescence results showcased the band edge emission peaks at three different points (primary flat, centre, and Edge) on InGaN/GaN heterostructures. These peak variations were found to be red shifted in all three points. This may be due to the fluctuations in the Indium composition and its corresponding V and trench defects, respectively. The Hall measurements exhibit an alteration in the semiconducting behavior with respect to V and trench defect surrounded InGaN layers. And, it also emphasizes that the compressive strain in underlying GaN can lead to the high sheet concentration than that of the tensile strain in the underlying GaN layer. It clearly suggests that the V and trench defect surrounded InGaN layers are the suitable material for next generation optoelectronics applications.

Transparent Ta3 N5 Photoanodes for Efficient Oxygen Evolution toward the Development of Tandem Cells.

Photoelectrochemical water splitting is regarded as a promising approach to the production of hydrogen, and the development of efficient photoelectrodes is one aspect of realizing practical systems. In this work, transparent Ta3 N5 photoanodes were fabricated on n-type GaN/sapphire substrates to promote O2 evolution in tandem with a photocathode, to realize overall water splitting. Following the incorporation of an underlying GaN layer, a photocurrent of 6.3 mA cm-2 was achieved at 1.23 V vs. a reversible hydrogen electrode. The transparency of Ta3 N5 to wavelengths longer than 600 nm allowed incoming solar light to be transmitted to a CuInSe2 (CIS), which absorbs up to 1100 nm. A stand-alone tandem cell with a serially-connected dual-CIS unit terminated with a Pt/Ni electrode was thus constructed for H2 evolution. This tandem cell exhibited a solar-to-hydrogen energy conversion efficiency greater than 7 % at the initial stage of the reaction.

Transparent Ta3N5 Photoanodes for Efficient Oxygen Evolution toward the Development of Tandem Cells

AbstractPhotoelectrochemical water splitting is regarded as a promising approach to the production of hydrogen, and the development of efficient photoelectrodes is one aspect of realizing practical systems. In this work, transparent Ta3N5 photoanodes were fabricated on n‐type GaN/sapphire substrates to promote O2 evolution in tandem with a photocathode, to realize overall water splitting. Following the incorporation of an underlying GaN layer, a photocurrent of 6.3 mA cm−2 was achieved at 1.23 V vs. a reversible hydrogen electrode. The transparency of Ta3N5 to wavelengths longer than 600 nm allowed incoming solar light to be transmitted to a CuInSe2 (CIS), which absorbs up to 1100 nm. A stand‐alone tandem cell with a serially‐connected dual‐CIS unit terminated with a Pt/Ni electrode was thus constructed for H2 evolution. This tandem cell exhibited a solar‐to‐hydrogen energy conversion efficiency greater than 7 % at the initial stage of the reaction.

Ion-assisted gate recess process induced damage in GaN channel of AlGaN/GaN Schottky barrier diodes studied by deep level transient spectroscopy

Deep traps in AlGaN/GaN Schottky barrier diodes have been investigated using deep level transient spectroscopy. It has been found that ion-assisted gate recess process leads to the formation of electron traps. The defects related to these traps are mainly located in the two-dimensional electron gas channel below the Schottky contact, meaning that the partial etching of the AlGaN layer produces damage on the top of the underlying GaN layer. The activation energies of the electron traps, extracted from the data, range between 0.28 and 0.41 eV. We believe that these centers are complexes linked with nitrogen vacancies which may behave as extended defects.