Ultraviolet Photoelectron Spectroscopy Measurements Research Articles

Synthesis and Characterization of Octacyano-Cu-Phthalocyanine.

Octacyano-metal-substituted phthalocyanine MPc(CN)8 is a promising n-type stable organic semiconductor material with eight cyano groups, including a strong electron-withdrawing group at its molecular terminals. However, most MPc(CN)8 have not been thoroughly investigated. Therefore, CuPc(CN)8 was synthesized in this study and its crystal structure, chemical and electronic states, thermal stability, and electrical properties were investigated. This article discusses the various properties of CuPc(CN)8, as compared to those of CuPc and FePc(CN)8. The previously reported FePc(CN)8 is an organic semiconductor molecule with a molecular structure similar to that of CuPc(CN)8. X-ray diffraction (XRD) measurements revealed that CuPc(CN)8 has a crystalline structure in the P1̅ space group. The crystal structure forms an in-plane network parallel to the molecular plane through multiple hydrogen bonds by the cyano groups at the molecular terminals. Interestingly, the crystal structure, especially the molecular stacking, of CuPc(CN)8 differs from that of FePc(CN)8. The absorption edge observed in the ultraviolet-visible spectrum of CuPc(CN)8 shifted to a longer wavelength than that of CuPc, which was attributed to the energy gap of CuPc(CN)8 being smaller than that of CuPc owing to the influence of the cyano groups at the molecular terminals, according to the molecular orbital calculation results using density functional theory. Ultraviolet photoelectron spectroscopy measurements confirmed that CuPc(CN)8 had a stronger n-type character than CuPc because of the orbital energy stabilization by the cyano groups. Thermogravimetry/differential thermal analysis measurements revealed that the thermal stability of CuPc(CN)8 was significantly higher than that of FePc(CN)8. CuPc(CN)8 exhibited photoconduction upon visible-light irradiation, and its electrical conductivity was higher than that of CuPc, which was attributed to a reduction in the electron injection barrier at the electrode interfaces.

N-Heterocyclic Carbene Monolayers on Metal-Oxide Films: Correlations between Adsorption Mode and Surface Functionality.

N-Heterocyclic carbene (NHC) ligands have been self-assembled on various metal and semimetal surfaces, creating a covalent bond with surface metal atoms that led to high thermal and chemical stability of the self-assembled monolayer. This study explores the self-assembly of NHCs on metal-oxide films (CuOx, FeOx, and TiOx) and reveals that the properties of these metal-oxide substrates play a pivotal role in dictating the adsorption behavior of NHCs, influencing the decomposition route of the monolayer and its impact on work function values. While the attachment of NHCs onto CuOx is via coordination with surface oxygen atoms, NHCs interact with TiOx through coordination with surface metal atoms and with FeOx via coordination with both metal and oxygen surface atoms. These distinct binding modes arise due to variances in the electronic properties of the metal atoms within the investigated metal-oxide films. Contact angle and ultraviolet photoelectron spectroscopy measurements have shown a significantly higher impact of F-NHC adsorption on CuOx than on TiOx and FeOx , correlated to a preferred, averaged upright orientation of F-NHC on CuOx.

Tailoring the surface properties of molybdenum oxytelluride thin films by its compositional ratio

In this work, RF magnetron co‐sputtering was used to fabricate molybdenum oxytelluride thin films with different atomic ratios. Scanning electron micrographs and atomic force micrographs revealed that pure Mo thin films were segregated. Thin films with 40% Te content portrayed needle‐like structures and thus had the largest Rq value of 2.48 nm. Contact angle measurements further supported the findings as the thin films with 40% Te content were the most hydrophobic. X‐ray photoelectron spectroscopy results revealed that the major oxidation states of Mo from Te‐poor to Te‐rich TFs were changed from high (+6) to low (+4 and/or +2). X‐ray diffraction data showed that peaks pertaining to molybdenum oxide species appeared, notably at 33.048° and 33.115°. Ultraviolet photoelectron spectroscopy and Kelvin probe measurements evinced that the work function increases with increasing Te content. Four‐point probe measurements revealed that molybdenum oxytelluride thin films tend to have higher electrical conductivity than pure Mo and Te thin films.

355 nm Nanosecond Ultraviolet Pulsed Laser Annealing Effects on Amorphous In-Ga-ZnO Thin Film Transistors.

Bottom-gate thin-film transistors (TFTs) with n-type amorphous indium-gallium-zinc oxide (a-IGZO) active channels and indium-tin oxide (ITO) source/drain electrodes were fabricated. Then, an ultraviolet (UV) nanosecond pulsed laser with a wavelength of 355 nm was scanned to locally anneal the active channel at various laser powers. After laser annealing, negative shifts in the threshold voltages and enhanced on-currents were observed at laser powers ranging from 54 to 120 mW. The energy band gap and work function of a-IGZO extracted from the transmittance and ultraviolet photoelectron spectroscopy (UPS) measurement data confirm that different energy band structures for the ITO electrode/a-IGZO channel were established depending on the laser annealing conditions. Based on these observations, the electron injection mechanism from ITO electrodes to a-IGZO channels was analyzed. The results show that the selective laser annealing process can improve the electrical performance of the a-IGZO TFTs without any thermal damage to the substrate.

Construction of 1D/3D Co9S8/Mn0.3Cd0.7S Schottky heterojunction for dramatically boosted photocatalytic H2 evolution performance

One of the most crucial strategies for transforming solar energy into sustainable hydrogen energy is photocatalytic H2 evolution, and constructing an effective and durable photocatalyst remains a difficult task. Herein, a 1D/3D Co9S8/Mn0.3Cd0.7S Schottky heterojunctions were successfully fabricated by three-step hydrothermal procedure, in which 3D Mn0.3Cd0.7S solid solution particles were immobilized on the 1D tube-like Co9S8 surface, allowing for extremely effective charge separation and transfer. Through coupling Co9S8 with Mn0.3Cd0.7S, the photocatalytic H2 evolution activity and stability were significantly boosted. The 7 % Co9S8/Mn0.3Cd0.7S heterojunction possessed the highest photocatalytic activity with the H2 evolution rate of 1586.4 μmol⋅h−1, which was 3.73 times larger than that of pristine Mn0.3Cd0.7S, corresponding to 21.8 % apparent quantum efficiency (AQE) at 420 nm monochromatic light. The Schottky heterojunction mechanism between Co9S8 and Mn0.3Cd0.7S could plausibly explain the enhanced photocatalytic H2 evolution performance, according to density functional theory (DFT) calculations and ultraviolet photoelectron spectroscopy (UPS) measurements. This investigation would offer the useful insights to develop Co9S8 cocatalyst for application in photocatalytic H2 evolution.

Enhancing photostability of 2D Ruddlesden–Popper perovskite via molecular acceptor passivation of metallic lead defects

Two-dimensional (2D) Ruddlesden–Popper (RP) perovskites hold great potential for novel optoelectronic applications. However, their unconventional optoelectronic properties are often compromised by a vulnerability to light irradiation, which leads to the formation of metallic Pb (Pb0) defects. This study investigates the passivation mechanism of these Pb0 defects in phenylethylammonium lead iodide (PEA2PbI4) using a strong molecular acceptor, 2,2′-(perfluoronaphthalene-2, 6-diylidene) dimalononitrile (F6-TCNNQ). In situ x-ray photoelectron spectroscopy results demonstrate that F6-TCNNQ effectively removes the light-induced Pb0 states, leading to the recovery of photoluminescence intensity in photodegraded PEA2PbI4 samples and significantly improving the photostability of pristine PEA2PbI4. F6-TCNNQ protects the terrace edge of PEA2PbI4, which is the site of initial degradation, as evidenced by atomic force microscopy and scanning electron microscopy analyses. In situ ultraviolet photoelectron spectroscopy measurements confirm substantial electron transfer from Pb0 to F6-TCNNQ, causing the oxidation of Pb0 to Pb2+. Furthermore, the staggered energy level alignment prevents electron transfer from the valence band maximum of PEA2PbI4 to the lowest unoccupied molecular orbital of F6-TCNNQ, thereby preserving the pristine electronic structure of PEA2PbI4. These findings provide new insights into defect passivation in 2D RP perovskites and offer a design strategy for highly stable optoelectronic devices.

Improving Performance of Organic Photodetectors by Using TCNQ Doped Copper Thiocyanate as the Anode Interfacial Layer

AbstractThe responsivity and specific detectivity are critical figures of merits for organic photodetectors; however, it remains challenging to simultaneously enhance two such parameters, since enhancing external quantum efficiency corresponding to responsivities will inevitably increase leakage current and noises, resulting in decreased specific detectivity. To address such a trade‐off, an effective anode interfacial layer of 7,7,8,8‐tetracyanoquinodimethane (TCNQ) doped copper thiocyanate (CuSCN) is developed herein, which can enhance shunt resistance, increase depletion width, enhance hole extraction efficiency, as well as reduce trap density of states of organic photodetectors. The organic photodetectors based on doped CuSCN present a very low dark current density of 4.4 × 10−11 A cm−2 and an impressively high specific detectivity of 1.1 × 1014 Jones. As evidenced by X‐ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy measurements, the energy levels of the doped CuSCN:TCNQ film are deepened, associated with the occurrence of dopant bonding and charge transfer. In addition, it is found that increasing the delay time can suppress the hysteresis effects of current density–voltage characteristics of organic photodetectors and make the minimum dark current density obtainable at 0 V. These findings demonstrate the great potential of using molecular doping to adjust the anode interfacial layer for developing high‐performance organic photodetectors.

Solution processable visible-light and color-selective image sensor with a ZnO/QDs/ZrO2 sandwich structure

Quantum dots (QDs) are emerging materials for optoelectronic devices because of their facile tunable bandgap and solution processability. However, overcoming inherent problems, such as vulnerability to atmospheric moisture and the persistence photoconductivity (PPC) effect originating from trap states, is necessary. We proposed a method to enhance the stability and reduce the PPC effect by adding a ZrO2 passivation layer above the QDs layer. The ZrO2 layer effectively reduced the trap state of the QDs, passivated the QDs from external environmental oxygen and moisture, and simultaneously acted as an additional channel. Interfacial analyses were conducted using X-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS), time-resolved photoluminescence (TRPL), and high-resolution transmission electron microscopy (HR-TEM) measurements. Hence, the device showed enhanced photoresponsivity and photosensitivity of 2.6 × 103 A/W and 6.67 × 105, respectively. Additionally, the device showed a highly reduced PPC effect with a rate of current increase of 0.017 under periodic 635 nm wavelength light illumination. Moreover, it showed reliable long-term stability over 30 days under a relative humidity of ∼40%. Therefore, a color-selective image sensor was successfully demonstrated, and the device could recognize red/green/blue colors owing to its reduced PPC effect and high stability. Our results suggest a useful method for developing next-generation QD-based transparent optoelectronic devices.

Interfacial engineering of hematite photoanodes toward high water splitting performance

Efficient and scalable photoelectrochemical water splitting electrode designs are a challenge. This study focuses on hafnium-modified hematite (X%Hf-HEM) photoanodes, prepared via spin-coating polymeric precursor solutions with varying Hf4+/Fe3+ (mol) ratios (1.0%, 3.0%, 4.0%, and 5.0%) onto fluorine-doped tin oxide substrates. Structural, morphological, and compositional analyses confirm pure hematite phases in all X%Hf-HEM samples. Increasing Hf4+ content correlated with reduced grain size, thickness, and surface roughness due to Hf4+ segregation at grain boundaries during thermal treatment. Hafnium segregation at hematite grain boundaries and hematite|fluorine-doped tin oxide interfaces is confirmed using scanning transmission electron microscopy coupled with energy dispersive spectroscopy. Notably, the 4%Hf-HEM photoanode exhibits exceptional efficiency enhancement, outperforming HEM efficiency by 4.5 times. Gas chromatography results highlight O2 and H2 evolution rates of 14.49 ± 0.09 μmol/cm2/h and 8.1 ± 0.5 μmol/cm2/h, respectively, for 4%Hf-HEM, with a H2/O2 ratio close to 2:1. The charge dynamics investigated from intensity-modulated photocurrent spectroscopy evidence the main Hf4+ effect of improving charge separation, achieving greater efficiency for 4%Hf-HEM. Shifts in valence band maximum from ultraviolet photoelectron spectroscopy measurements indicate surface state presence, supported by ηtransfer trends calculated from intensity-modulated photocurrent spectroscopy. This research presents a scalable, cost-effective approach to multiinterface photoanode development, holding promise for innovative photoelectrochemical water splitting technologies.

Insights into the Semiconductor SERS Activity: The Impact of the Defect-Induced Energy Band Offset and Electron Lifetime Change.

The significant boost in surface-enhanced Raman scattering (SERS) by the chemical enhancement of semiconducting oxides is a pivotal finding. It offers a prospective path toward high uniformity and low-cost SERS substrates. However, a detailed understanding of factors that influence the charge transfer process is still insufficient. Herein, we reveal the important role of defect-induced band offset and electron lifetime change in SERS evolution observed in a MoO3 oxide semiconductor. By modulating the density of oxygen vacancy defects using ultraviolet (UV) light irradiation, SERS is found to be improved with irradiation time in the first place, but such improvement later deteriorates for prolonged irradiation even if more defects are generated. Insights into the observed SERS evolution are provided by ultraviolet photoelectron spectroscopy and femtosecond time-resolved transient absorption spectroscopy measurements. Results reveal that (1) a suitable offset between the energy band of the substrate and the orbitals of molecules is facilitated by a certain defect density and (2) defect states with relatively long electron lifetime are essential to achieve optimal SERS performance.

Self-driven electron enrichment of ultrafine PdAu nanoparticles for electrochemical CO2 reduction: High applicability of work function as an activity descriptor

Highly coupled metal/dopant-incorporated carbon dyads provide a possibility to modulate the electron density of metallic materials by forming a rectifying interface, thus showing an enhanced activity in electrochemical CO2 reduction reaction (ECRR). However, understanding the promotion effects of dopants for ECRR is limited to the prediction by theoretical interpretation and case-by-case studies. Herein, we report the direct experimental evidence that the work function, regulated by single structural factor-dopant contents, is significantly correlated to the ECRR reaction activity and kinetics. We prepared a series of PdAu/NxC electrocatalysts composed of ultrafine (∼5.7 nm) PdAu bimetallic nanoparticles and tailorable N-doped carbon supports. The wide range of the amount of N dopants allowed the modification of the band gap of the carbon easily. Using ultraviolet photoelectron spectroscopy (UPS) measurements, we demonstrate that the reactivity and kinetics trends of the PdAu/NxC in the ECRR can be intrinsically correlated with the work function of the catalysts. PdAu/N7.50C electrocatalyst with the highest N contents displays a 100% CO2-to-CO conversion and high conversion efficiency over a wide potential window, superior over other reported PdAu catalysts. This work provides a novel way to boost ECRR performance by deliberately lowering the work function of the metal/carbon electrocatalysts through the enhancement by dopants.

Charge transfer and electronic relaxation effects in the photoemission of EMIM-DCA ionic liquid vapor

Ultraviolet photoelectron spectroscopy (UPS) measurements of EMIM-DCA vapors have been conducted. Density functional theory (DFT), Møller–Plesset perturbation theory (MP2) and many-body perturbation theory calculations (GW) have been used to interpret the experimentally measured spectra. The vapor of ionic liquids normally consists of isolated ion-pairs and the corresponding photoemission spectra should reflect the electronic binding energies of the molecular orbitals. The UPS spectra have revealed that many photolines are shifted when compared to ab initio calculation results. The hybrid DFT functionals, which performed very good in the description of the UPS spectra of many other ionic liquid vapors have shortcomings in the EMIM-DCA case. The MP2 calculation and the quasiparticle GW approach are shown to offer a better description of the experimental UPS spectra. The charge distribution analysis showed that there seems to be a favorable charge transfer from the cation to the anion upon ionization. The new data provides strong support to the argument that in some cases DFT still has difficulties in the modeling of IL ion-pairs.

Inverted Solution-Processed Quantum Dot Light-Emitting Devices with Wide Band Gap Quantum Dot Interlayers.

Despite its benefits for facilitating device fabrication, utilization of a polymeric hole transport layer (HTL) in inverted quantum dots (QDs) light-emitting devices (IQLEDs) often leads to poor device performance. In this work, we find that the poor performance arises primarily from electron leakage, inefficient charge injection, and significant exciton quenching at the HTL interface in the inverted architecture and not due to solvent damage effects as is widely believed. We also find that using a layer of wider band gap QDs as an interlayer (IL) in between the HTL and the main QDs' emission material layer (EML) can facilitate hole injection, suppress electron leakage, and reduce exciton quenching, effectively mitigating the poor interface effects and resulting in high electroluminescence performance. Using an IL in IQLEDs with a solution-processed poly(9,9-dioctylfluorene-alt-N-(4-sec-butylphenyl)-diphenylamine) (TFB), HTL improves the efficiency by 2.85× (from 3 to 8.56%) and prolongs the lifetime by 9.4× (from 1266 to 11,950 h at 100 cd/m2), which, to the best of our knowledge, is the longest lifetime for an R-IQLED with a solution-coated HTL. Measurements on single-carrier devices reveal that while electron injection becomes easier as the band gap of the QDs decreases, hole injection surprisingly becomes more difficult, indicating that EMLs of QLEDs are more electron-rich in the case of red devices and more hole-rich in the case of blue devices. Ultraviolet photoelectron spectroscopy measurements verify that blue QDs have a shallower valence band energy than their red counterparts, corroborating these conclusions. The findings in this work, therefore, provide not only a simple approach for achieving high performance in IQLEDs with solution-coated HTLs but also novel insights into charge injection and its dependence on QDs' band gap as well as into different HTL interface properties of the inverted versus upright architecture.

Multi-Technique Approach for Work Function Exploration of Sc2O3 Thin Films.

Thin films based on scandium oxide (Sc2O3) were deposited on silicon substrates to investigate the thickness effect on the reduction of work function. X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), energy dispersive X-ray reflectivity (EDXR), atomic force microscopy (AFM), and ultraviolet photoelectron spectroscopy (UPS) measurements were performed on the films deposited by electron-beam evaporation with different nominal thicknesses (in the range of 2-50 nm) and in multi-layered mixed structures with barium fluoride (BaF2) films. The obtained results indicate that non-continuous films are required to minimize the work function (down to 2.7 eV at room temperature), thanks to the formation of surface dipole effects between crystalline islands and substrates, even if the stoichiometry is far from the ideal one (Sc/O = 0.38). Finally, the presence of BaF2 in multi-layered films is not beneficial for a further reduction in the work function.

Determination of conduction type in high-resistivity silicon by combining spreading resistance profiling (SRP) with hydrofluoric acid treatment

The effect of hydrofluoric acid (HF) treatment on the surface electrical properties was observed in high-resistivity bulk silicon by the spreading resistance profiling (SRP) technique. It is found that the near-surface resistivity decreased in n-type silicon and increased in p-type silicon after HF treatment according to the SRP measurement. The variation of surface chemical elements and energy bands of HF-treated n-type and p-type (100) silicon has been characterized by x-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy measurements. The results indicate that the surface Fermi level is shifted toward the conduction band minimum after HF treatment. The surface energy band bending caused by the surface electronegative groups (–F and –OH) was investigated by the method of First-principles calculation. Based on these findings, a method combining the SRP measurement with HF treatment to determine the conduction type of high-resistivity silicon was proposed, which is critical for the development of high-resistivity CZ silicon crystal growth.

Correlating Heteroatoms Doping, Electronic Structures, and Photocatalytic Activities of Single‐Atom‐Doped Ag25(SR)18 Nanoclusters

Atomic‐level manipulation of catalysts is important for both fundamental studies and practical applications. Here, the central metal atom in an atomically precise Ag25 nanocluster (NC) is replaced with a single Pd, Pt, and Au atom, respectively, and employed as a model system to study the structure–property–activity relationship at the atomic level. While the geometric structures are well‐preserved after doping, the electronic structures of Ag25 NCs are significantly altered. The combination of Ag25 and TiO2 enhances the charge separation at the interface, exhibiting a 10 times higher hydrogen production rate in photocatalytic hydrogen evolution reaction compared to bare TiO2. Further results show that heteroatoms doping has a negative impact on performance, particularly in the cases of Pd and Au doping. Ultraviolet photoelectron spectroscopy measurements and density functional theory calculations suggest that the lower activities are due to an energy mismatch between the levels of doped NCs and TiO2. These findings not only reveal the impact of heteroatoms doping on the electronic properties and photocatalytic activities of NCs, but can also guide the design of heterometallic NCs for photocatalytic applications.

Atomically well-defined nitrogen doping for cross-plane transport through graphene heterojunctions.

The nitrogen doping of graphene leads to graphene heterojunctions with a tunable bandgap, suitable for electronic, electrochemical, and sensing applications. However, the microscopic nature and charge transport properties of atomic-level nitrogen-doped graphene are still unknown, mainly due to the multiple doping sites with topological diversities. In this work, we fabricated atomically well-defined N-doped graphene heterojunctions and investigated the cross-plane transport through these heterojunctions to reveal the effects of doping on their electronic properties. We found that a different doping number of nitrogen atoms leads to a conductance difference of up to ∼288%, and the conductance of graphene heterojunctions with nitrogen-doping at different positions in the conjugated framework can also lead to a conductance difference of ∼170%. Combined ultraviolet photoelectron spectroscopy measurements and theoretical calculations reveal that the insertion of nitrogen atoms into the conjugation framework significantly stabilizes the frontier molecular orbitals, leading to a change in the relative positions of the HOMO and LUMO to the Fermi level of the electrodes. Our work provides a unique insight into the role of nitrogen doping in the charge transport through graphene heterojunctions and materials at the single atomic level.

An n‐n Heterojunction Configuration for Efficient Electron Transport in Organic Photovoltaic Devices

AbstractSelective electron transport and extraction are essential to the operation of photovoltaic devices. Electron transport layer (ETL) is therefore critical to organic photovoltaics (OPV). Herein, an ETL configuration is presented comprising a solution‐processed n‐n organic heterojunction to enhance electron transport and hole blocking, and boost power conversion efficiency (PCE) in OPV. Specifically, the n‐n heterojunction is constructed by stacking a narrow‐band n‐type conjugated polymer layer (PNDIT‐F3N) and a wide‐band n‐type conjugated molecule layer (Phen‐NaDPO). Based on the ultraviolet photoelectron spectroscopy measurement and numerical simulation of current density‐voltage characteristics, the formation of the built‐in potential is investigated. In three OPVs with different active layers, substantial improvements are observed in performance following the introduction of this ETL configuration. The performance enhancement arises from the combination of selective carrier transport properties and reduced recombination. Another contributing factor is the good film‐forming quality of the new ETL configuration, where the surface energies of the related materials are well‐matched. The n‐n organic heterojunction represents a viable and promising ETL construction strategy for efficient OPV devices.

Investigation of electrical transport across the CIGSSe/Mo(Se,S)2 interface of a CIGSSe-based solar cell by experiment and device simulation

In this work, we investigated the electrical transport across the valence band injection barrier at the interface between the Cu(In,Ga)(S,Se)2 absorber layer and the Mo(Se,S)2 layer of the back contact of a chalcopyrite solar cell with respect to their different sulfur contents. For this purpose, samples and modules with three different [S][S]+[Se] (SSSe) ratios in the near vicinity of the interface were produced. The valence band offsets at this interface were determined by means of glow-discharge optical emission spectroscopy and ultraviolet photoelectron spectroscopy (UVPES). Measured current–voltage (IV) characteristics allowed to correlate the roll-over behavior related to the injection barrier with the SSSe composition. We discuss two contradictory findings in literature concerning the layer primarily responsible for the valence band edge offset and the injection barrier it creates, of which both findings could be confirmed in our experiments. We conclude that this could be explained by the sensitivity of the UVPES measurement to local differences in the Mo(Se,S)2 crystal properties. Furthermore, we employ a device simulation model to gain insight into the mechanisms at play at that interface, arriving at the following conclusions: (1) Thermionic emission by itself does not suffice to reproduce the measured IV data under the influence of said barrier. (2) The influence of Na doping on the hole density of the absorber narrows the injection barrier at this interface so that tunneling currents contribute considerably to the injected current, even for significantly large valence band edge offsets of 0.8eV. (3) Light soaking (LS) drastically reduces the roll-over effect, although the difference in bulk carrier concentration and its effect on IV behavior are negligible. Instead, the experimental IV data after LS could be reproduced by a higher interface acceptor trap occupation.

Emergent properties from CuPd alloy films under near-infrared excitation

Noble-transition metal alloys offer emergent optical and electronic properties for near-infrared (NIR) optoelectronic devices. We investigate the optical and electronic properties of CuxPd1-x alloy thin films and their ultrafast electron dynamics under NIR excitation. Ultraviolet photoelectron spectroscopy measurements supported by density functional theory calculations show strong d-band hybridization between the Cu 3d and Pd 4d bands. These hybridization effects result in emergent optical properties, most apparent in the dilute Pd case. Time-resolved terahertz spectroscopy with NIR (e.g., 1550nm) excitation displays composition-tunable electron dynamics. We posit that the negative peak in the normalized increment of transmissivity (ΔT/T) below 2ps from dilute Pd alloys is due to non-thermalized hot-carrier generation. On the other hand, Pd-rich alloys exhibit an increase in ΔT/T due to thermalization effects upon ultrafast NIR photoexcitation. CuxPd1-x alloys in the dilute Pd regime may be a promising material for future ultrafast NIR optoelectronic devices.