Ultrahigh Energy Storage Performance Research Articles

Achieving ultra-high energy storage performance in simple systems through minimal element substitution

Dielectric capacitors are essential components of modern advanced electronic devices and power systems based on their ultra-fast charging and discharging speeds and supreme power densities. Nevertheless, how to comprehensively boost their energy storage density and storage efficiency is still an insurmountable challenge. Here, we report a simple micro-chemical polarizability modulation strategy that enables SrTiO3-based dielectric materials to achieve excellent energy storage properties. The energy density and energy efficiency are increased to as high as 76 J∙cm−3 and 72 % from 0.4 J∙cm−3 and 46.7 % of pure STO, respectively, which is the largest value in micro-substitution (less than 3 %). Our results show that the introduction of trace amounts of elements with high ionic polarizabilities (Mn, V) facilitates the increase of chemical disorder and the formation of stable and highly dynamic polar nanoregions (PNRs), which reduces the hysteresis of the polarization switching and improves the polarization at the breakdown field strength, synergistically fostering the energy storage performance. The results of X-ray photoelectron spectroscopy and scanning electron microscopy reveal that the micro-substitution of Mn and V promote the reduction of oxygen vacancies and grain size, improving the breakdown resistance and stability of the capacitor. This present approach is expected to be widely used in the development of high-performance dielectrics.

Ultrahigh energy storage performance in BNT-based binary ceramic via relaxor design and grain engineering

Dielectric capacitors attract much attention for advanced electronic systems owing to their ultra-fast discharge rate and high power density. However, the low energy storage density (Wrec) and efficiency (η) severely limit their applications. Herein, Bi0.5Na0.5TiO3-K0.5Na0.5NbO3 binary ceramic is developed to obtain excellent energy storage performance with strong relaxor behavior, together with large polarization and distorted lattice calculated by first-principles calculations. The atomic-scale local structure analysis of 0.75Bi0.5Na0.5TiO3–0.25K0.5Na0.5NbO3 ceramic reveals distorted polarization distribution and small polar nanoregion related with the enhanced relaxation and low hysteresis. Finite element analysis demonstrates ultrafine grain and increased grain boundary density following hot-pressing sintering are crucial factors in significantly enhancing the breakdown strength (Eb). As a result, ultrahigh Wrec of 12.39 J/cm3 and η of 87.1 % are achieved at a superhigh Eb of 713 kV/cm. Encouragingly, excellent performance of temperature, frequency and fatigue stability at 400 kV/cm are obtained, and high power density of ∼ 306 MW/cm3 as well as fast discharge speed of ∼ 23.3 ns are also realized. This work proposes a simple binary design with strong relaxor behavior, and highlights the potential of grain engineering to achieve outstanding energy storage performance with great stability and excellent charge-discharge property for pulse power devices.

Optimizing high-temperature energy storage in tungsten bronze-structured ceramics via high-entropy strategy and bandgap engineering

As a vital material utilized in energy storage capacitors, dielectric ceramics have widespread applications in high-power pulse devices. However, the development of dielectric ceramics with both high energy density and efficiency at high temperatures poses a significant challenge. In this study, we employ high-entropy strategy and band gap engineering to enhance the energy storage performance in tetragonal tungsten bronze-structured dielectric ceramics. The high-entropy strategy fosters cation disorder and disrupts long-range ordering, consequently regulating relaxation behavior. Simultaneously, the reduction in grain size, elevation of conductivity activation energy, and increase in band gap collectively bolster the breakdown electric strength. This cascade effect results in outstanding energy storage performance, ultimately achieving a recoverable energy density of 8.9 J cm−3 and an efficiency of 93% in Ba0.4Sr0.3Ca0.3Nb1.7Ta0.3O6 ceramics, which also exhibit superior temperature stability across a broad temperature range up to 180 °C and excellent cycling reliability up to 105. This research presents an effective method for designing tetragonal tungsten bronze dielectric ceramics with ultra-high comprehensive energy storage performance.

Ultrahigh Energy Storage Performance of BiFeO3-BaTiO3 Flexible Film Capacitor with High-Temperature Stability via Defect Design.

Nanoengineering polar oxide films have attracted great attention in energy storage due to their high energy density. However, most of them are deposited on thick and rigid substrates, which is not conducive to the integration of capacitors and applications in flexible electronics. Here, an alternative strategy using van der Waals epitaxial oxide dielectrics on ultra-thin flexible mica substrates is developed and increased the disorder within the system through high laser flux. The introduction of defects can efficiently weaken or destroy the long-range ferroelectric ordering, ultimately leading to the emergence of a large numbers of weak-coupling regions. Such polarization configuration ensures fast polarization response and significantly improves energy storage characteristics. A flexible BiFeO3-BaTiO3 (BF-BT) capacitor exhibits a total energy density of 43.5 J cm-3 and an efficiency of 66.7% and maintains good energy storage performance over a wide temperature range (20-200 °C) and under large bending deformation (bending radii ≈ 2mm). This study provides a feasible approach to improve the energy storage characteristics of dielectric oxide films and paves the way for their practical application in high-energy density capacitors.

Designing silver niobate-based relaxor antiferroelectrics for ultrahigh energy storage performance

Designing silver niobate-based relaxor antiferroelectrics for ultrahigh energy storage performance

Achieving ultrahigh energy storage performance of PBLZST-based antiferroelectric composite ceramics via interfacial polarization engineering

Antiferroelectric (AFE) ceramics can be used in pulse power devices for high power density and fast discharge. Composites are recognized as an effective strategy to combine the benefits of different materials but suffer from interfacial mismatch and interfacial polarization. In this work, a combination of high-breakdown Pb0.94La0.04(Zr0.99-xSnxTi0.01)O3 (PLZST) with high-efficiency Pb0.8925Ba0.04La0.045(Zr0.65Sn0.3Ti0.05)O3 (PBLZST) is explored to enhance energy storage performance. Via adjusting Sn content in PLZST, the difference in lattice and dielectric properties between two phases are reduced, decreasing interfacial polarization. The breakdown strength of PBLZST-PLZST is boosted from 285 kV cm−1 to 345 kV cm−1, with maximum polarization strength decreasing from 44 μC cm−2 to 36 μC cm−2. An recoverable energy density (Wre ∼ 7.152 J cm−3) and discharged efficiency (η ∼ 90.5%) has been achieved in Pb0.8925Ba0.04La0.045(Zr0.65Sn0.3Ti0.05)O3-Pb0.94La0.04(Zr0.69Sn0.3Ti0.01)O3 (x = 0.3) composite ceramics. These findings highlight the potential of interfacial polarization engineering for developing composite ceramics with high-energy storage performance.

Novel NaNbO3-based relaxors featuring ultrahigh energy storage performance

Ferroelectric ceramics with ultrahigh power density and fast charging/discharging are attracting increasing attention. The practical application of most antiferroelectric ceramics in current electronics is significantly limited by their poor recoverable energy storage density. Here, a novel system ceramic of (1-x) Na0.84Ca0.16Nb0.84Ti0.16O3-xBiZn2/3Nb1/3O3 (NCNT-xBZN) solid solutions, possessing a giant Wrec∼7.05 J cm−3 and excellent conversion efficiency (η)∼83.7% under 53 kV mm−1, was synthesized to exhibit superior stability with changing temperature, frequency and fatigue behavior, together with the large current density (CD=571.8 A cm−2), ultrahigh power density (PD=85.7 MW cm−3) and ultrafast discharge rate (∼200 ns). These outstanding properties are attributed to the phase transformation from the AFE R to the FE Q phase, accompanied by the smashing of sub-microdomains into polar nanoregions, as the BZN content raises. The experimental results disclose that the synergistic effect of the highly dynamic response of polar nanoregions and the local lattice distortion arising from the disruption of long-range polar ordering by heterovalent ion filling generates a delayed saturation polarization with a strong relaxor behavior, thereby optimizing the energy storage density. The unique combination, together with a simple synthesis strategy, offers a refreshing strategy for the development of dielectric materials.

Ultrahigh energy storage performance in AN-based superparaelectric ceramics

Ceramics capacitors, especially featuring antiferroelectric (AFE) structure, are widely used in pulsed power electronic systems due to distinctive high-power density and external field stability. Lead-free AFE material AgNbO3 has seized substantial research attention owing to its unique temperature driven multi-level phase transitions, and many works have greatly improved the energy storage properties by engineering these temperature-dependent phase boundaries. In this work, an ever-unadopted strategy was proposed to modulate the relaxor structure in AgNbO3 by designing room-temperature (RT) superparaelectric phase via Bi incorporation into AN lattice matrix. Structural analysis shows M phase (space group Pbcm) evolves into O phase (space group Cmcm) with 12 mol.% Bi-substitution, breaking the long-range AFE order into polar nanoregions. Hence, an ultra-high recoverable energy density (7.6 J/cm3) and a high efficiency (79 %) are simultaneously achieved in the Ag0.64Bi0.12NbO3 ceramics under 52.2 kV/mm. Moreover, the excellent energy storage properties are accompanied with good temperature and frequency stability, with the variation of Wrec less than ± 15% (over 25–120 °C) and ± 10% (over 1–200 Hz) under 25 kV/mm, respectively. The novel approach reported herein provides a new guidance for designing AgNbO3-based and other AFE materials for high-performance energy storage applications.

NaNbO3‐Based Multilayer Ceramic Capacitors with Ultrahigh Energy Storage Performance

AbstractWith the gradual promotion of new energy technologies, there is a growing demand for capacitors with high energy storage density, high operating temperature, high operating voltage, and good temperature stability. In recent years, researchers have been devoted to improving the energy storage properties of lead‐based, titanium‐based, and iron‐based multilayer ceramic capacitors (MLCCs). However, limited research has been conducted into MLCC development using NaNbO3 (NN)‐based materials. In this paper, the successful achievement of excellent overall energy storage performance in a novel NaNbO3–(Bi0.5Na0.5)TiO3–Bi(Mg0.5Hf0.5)O3 lead‐free MLCCs is presented. The disordered tilting around the cp axis, disrupts Na and Bi ions' long‐range displacements and induces PNRs and strong relaxor behavior, which ensures a superior energy storage performance, together with the multilayer ceramic design strategy. As a result, the NN‐based MLCC device presents an ultra‐high Wrec = 12.65 J cm−3 and η = 88.5%, simultaneously showing superior temperature stability (Wrec varies <±1% and η varies <±6% from −50 to 125 °C) and fatigue resistance (Wrec and η vary <±1% over 107 cycles). This study highlights the advanced energy storage potential of NaNbO3‐based MLCCs for various applications, and ushers in a new era for designing high‐performance lead‐free capacitors that can operate in harsh environments.

Self-healing polymer dielectric exhibiting ultrahigh capacitive energy storage performance at 250 °C

Polymer dielectrics capable of operating at elevated temperatures are essential components in advanced electronics and electrical power systems. However, dielectric polymers generally display significantly deteriorated capacitive performance at high temperatures...

NaNbO3-based short-range antiferroelectric ceramics with ultrahigh energy storage performance

NaNbO3-based short-range antiferroelectric ceramics with ultrahigh energy storage performance

Achieving Ultrahigh Energy Storage Performance for NaNbO3-Based Lead-Free Antiferroelectric Ceramics via the Coupling of the Stable Antiferroelectric R Phase and Nanodomain Engineering.

NaNbO3(NN)-based lead-free eco-friendly antiferroelectric (AFE) ceramics with an extremely high maximum polarization (Pm) are believed to be a promising alternative to traditional lead-based ceramics. Nevertheless, the high energy dissipation resulting from the large polarization hysteresis, which arises from the AFE-ferroelectric (FE) phase transition, poses a great challenge to the application of this promising ceramic. Herein, an excellent recoverable energy storage density (Wrec) was attained by intentionally designing a (0.86 - x) NaNbO3-0.14CaTiO3-xBiMg2/3Nb1/3O3 (NN-CT-xBMN) relaxor antiferroelectric ceramic, attributed to the synergistic effect of the stable AFE R phase and nanodomain engineering to overcome the bottleneck. The obtained results illustrate that the inclusion of BMN causes the transition from AFE microdomains to nanodomains and stabilizes the relaxor AFE orthorhombic R phase, which generates a highly stable polarization field response with low hysteresis and delays the AFE-FE phase transition, thus improving energy storage density. As a consequence, a high Wrec of 5.41 J cm-3 with an excellent conversion efficiency η of 86.7% was obtained in the NN-CT-0.08BMN ceramic. Moreover, the NN-CT-0.08BMN ceramic exhibits superior stability in temperature (25-150 °C), frequency (1-600 Hz), and fatigue behavior (10°-104 cycles) together with a large current density (CD = 810 A cm-2), ultrahigh power density (PD = 118 MW cm-3), and ultrafast discharge rate (t0.9 < 0.7 μs). This superior energy storage density, coupled with outstanding stability, suggests that the NN-CT-0.08BMN ceramic has the potential to be a promising candidate for pulsed power applications and power electronics.

BaTiO3-Based Ferroelectric Thin Film Capacitor on Silicon for Ultra-High Energy Storage Performance at Low Electric Field Strength

In the case of dielectric energy storage devices, excessive pursuit of giant electric fields means greater exposure to high temperatures and insulation damage risk. Ferroelectric thin film devices offer opportunities for energy storage needs under finite electric fields due to their intrinsically large polarization and the advantage of small size. Herein, we designed the capacitor’s dielectric layer by doping barium titanate Ba <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">(1-x)</sub> Ce <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> TiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> (BCTO). The addition of highly charged ions Ce <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3+</sup> induce cell shrinkage thus further optimizing the ferroelectric polarization. Accordingly, the capacitor with Au/BCTO/Au structure integrated directly on silicon substrate showed excellent energy storage performance ( <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">W_rec</i> ≈ 92.6 J/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sup> and η ≈ 86.5%) under only 1961 kV/cm. In addition, we significantly increased the electrical breakdown strength from 1726 kV/cm to 3426 kV/cm by adjusting the Ba <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.95</sub> Ce <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.05</sub> TiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> film thickness, thus achieving ultra-high energy storage density (107.9 J/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sup> ). The results expand the application prospects of silicon-based ferroelectric capacitors for energy storage at low electric field strength.

Ultrahigh energy storage performance realized in AgNbO 3-based antiferroelectric materials via multiscale engineering

Ultrahigh energy storage performance realized in AgNbO ₃-based antiferroelectric materials via multiscale engineering

Ultra-high energy storage performance in Bi5Mg0.5Ti3.5O15 film via a low temperature-induced ergodic relaxation state

Good low-temperature energy storage characteristics are conducive to the successful merger of Si-based semiconductor technology with dielectric energy storage films. Due to low maximum polarization intensity and poor crystallinity at low temperatures, however, it is difficult for dielectric energy storage films to attain excellent dielectric energy storage properties. Herein, Bi5Mg0.5Ti3.5O15 films accomplish the shift from a non-ergodic relaxor state to an ergodic relaxation state by lowering the annealing temperature, which simultaneously increases insulating characteristics. The energy loss is reduced while maintaining a high polarization intensity and high breakdown electric field, which results in the ultra-high energy storage density (122.2 J/cm3) and efficiency (77.3 %) of the Bi5Mg0.5Ti3.5O15 film at an annealing temperature of 500 °C. Meanwhile, the Bi5Mg0.5Ti3.5O15 films show excellent stability in terms of temperature (−20 °C to 150 °C), frequency (0.05 kHz–20 kHz), and fatigue resistance (1 ×108). The domain states and insulation properties of temperature-controlled films are used in this work to achieve ultra-high energy storage properties, and a concise and feasible scheme for the application of low temperature energy storage films in semiconductor technology is provided.

Sandwiched Polymer Nanocomposites Reinforced by Two-Dimensional Interface Nanocoating for Ultrahigh Energy Storage Performance at Elevated Temperatures.

Polymer-based dielectrics are essential components in electrical and power electronic systems for high power density storage and conversion. A mounting challenge for polymer dielectrics is how to maintain their electrical insulation at not only high electric fields but also elevated temperatures, in order to meet the growing needs for renewable energies and grand electrifications. Here, a sandwiched barium titanate/polyamideimide nanocomposite with reinforced interfaces via two-dimensional nanocoatings is presented. It is demonstrated that boron nitride and montmorillonite nanocoatings can block and dissipate injected charges, respectively, to present a synergetic effect on the suppression of conduction loss and the enhancement of breakdown strength. Ultrahigh energy densities of 2.6, 1.8, and 1.0 J cm-3 are obtained at 150 °C, 200 °C, and 250 °C, respectively, with a charge-discharge efficiency >90%, far outperforming the state-of-the-art high-temperature polymer dielectrics. Cyclic charge-discharge tests up to 10 000 times verify the excellent lifetime of the interface-reinforced sandwiched polymer nanocomposite. This work provides a new pathway to design high-performance polymer dielectrics for high-temperature energy storage via interfacial engineering.

Delayed Polarization Saturation Induced Superior Energy Storage Capability of BiFeO3 -Based Ceramics Via Introduction of Non-Isovalent Ions.

Electrostatic capacitors are emerging as a highly promising technology for large-scale energy storage applications. However, it remains a significant challenge to improve their energy densities. Here, an effective strategy of introducing non-isovalent ions into the BiFeO3 -based (BFO) ceramic to improve energy storage capability via delaying polarization saturation is demonstrated. Accordingly, an ultra-high energy density of up to 7.4 J cm-3 and high efficiency ≈ 81% at 680kV m-1 are realized, which is one of the best energy storage performances recorded for BFO-based ceramics. The outstanding comprehensive energy storage performance is attributed to inhibiting the polarization hysteresis resulting from generation ergodic relaxor zone and random field, and generating highly-delayed polarization saturation with continuously-increased polarization magnitudes with the electric field of supercritical evolution. The contributions demonstrate that delaying the polarization saturation is a consideration for designing the next generation of lead-free dielectric materials with ultra-high energy storage performance.

Excellent energy storage performance of (Sc0.5Ta0.5)4+ modified (Bi0.5Na0.5)TiO3-based ceramics modulated by the evolution of polar phases

An ultrahigh energy storage performance is achieved in the BNST-20% (Sc0.5Ta0.5)4+ ceramic via chemical modification, which could induce the evolution of oxygen vacancies and local polar phases to achieve a high saturation polarization.

Ultrahigh energy storage performance of a 0.75Bi0.47Na0.47Ba0.06TiO3-0.25CaTi0.8Sn0.2O3 ceramic under moderate electric fields

The development of ceramic capacitors featuring high reliability and superior comprehensive performance is vital for practical applications in medium electric fields.

Phase and Band Structure Engineering via Linear Additive in NBT-ST for Excellent Energy Storage Performance with Superior Thermal Stability.

Lead-free relaxor ferroelectric ceramics with ultrahigh energy-storage performance are vital for pulsed power systems. We herein propose a strategy of phase and band structure engineering for high-performance energy storage. To demonstrate the effectiveness of this strategy, (1 - x)(0.75Na0.5Bi0.5TiO3-0.25SrTiO3)-xCaTi0.875Nb0.1O3 (NBT-ST-xCTN, x = 0.1, 0.2, 0.3, 0.4, and 0.5) samples were designed and fabricated via the solid-state reaction method. The linear dielectric CTN was used as a modulator to tune both phase and band structures of the tested system. Our results show that both rhombohedral phase (R-phase) and tetragonal phase (T-phase) coexist in the samples. The R/T ratio decreases, while the band gap increases with increasing CTN content. The best energy-storage properties with large energy storage density (Wrec = 7.13 J/cm3), a high efficiency (η = 90.3%), and an ultrafast discharge time (25 ns) were achieved in the NBT-ST-0.4CTN sample with R/T = 0.121. Importantly, along with its excellent energy-storage performance, the sample exhibited superior thermal stability with the variations of Wrec ≤ 7% and η ≤ 10% over the wide temperature range of 233-413 K. This work suggests that this engineering of phase and band structures is a promising strategy to achieve superior energy-storage properties in lead-free ceramics.