Ultrafast Electron Microscopy Research Articles

Harnessing Plasmonic Interference for Nanoscale Ultrafast Electron Sources.

In this Letter we demonstrate the use of plasmonic focusing in conjunction with nonlinear photoemission to develop geometrically flat nanoscale electron sources with less than 40pm-rad root mean squared (rms) normalized transverse emittance. Circularly polarized light is incident on a gold Archimedean spiral structure to generate surface-plasmon polaritons that interfere coherently at the center resulting in a 50nm rms emission area. Such a nanostructured flat surface enables simultaneous spatiotemporal confinement of emitted electrons at the nanometer and femtosecond level and can be used as an advanced electron source for high-repetition-rate ultrafast electron diffraction and microscopy experiments as well as the next generation of miniaturized particle accelerators.

Octave-wide broadening of ultraviolet dispersive wave driven by soliton-splitting dynamics

Coherent dispersive wave emission, as an important phenomenon of soliton dynamics, manifests itself in multiple platforms of nonlinear optics from fibre waveguides to integrated photonics. Limited by its resonance nature, efficient generation of coherent dispersive wave with ultra-broad bandwidth has, however, proved difficult to realize. Here, we unveil a new regime of soliton dynamics in which the dispersive wave emission process strongly couples with the splitting dynamics of the driving pulse. High-order dispersion and self-steepening effects, accumulated over soliton self-compression, break the system symmetry, giving rise to high-efficiency generation of coherent dispersive wave in the ultraviolet region. Simultaneously, asymmetric soliton splitting results in the appearance of a temporally-delayed ultrashort pulse with high intensity, overlapping and copropagating with the dispersive wave pulse. Intense cross-phase modulations lead to octave-wide broadening of the dispersive wave spectrum, covering 200–400 nm wavelengths. The highly-coherent, octave-wide ultraviolet spectrum, generated from the simple capillary fibre set-up, is in great demand for time-resolved spectroscopy, ultrafast electron microscopy and frequency metrology applications, and the critical role of the secondary pulse in this process reveals some new opportunities for all-optical control of versatile soliton dynamics.

Unveiling Spatial and Temporal Dynamics of Plasmon-Enhanced Localized Fields in Metallic Nanoframes through Ultrafast Electron Microscopy.

Plasmonic nanomaterials, particularly noble metal nanoframes (NFs), are important for applications such as catalysis, biosensing, and energy harvesting due to their ability to enhance localized electric fields and atomic efficiency via localized surface plasmon resonance (LSPR). Yet the fundamental structure-function relationships and plasmonic dynamics of the NFS are difficult to study experimentally and thus far rely predominately on computational methodologies, limiting their utilization. This study leverages the capabilities of ultrafast electron microscopy (UEM), specifically photon-induced near-field electron microscopy (PINEM), to probe the light-matter interactions within plasmonic NF structures. The effects of shape, size, and plasmonic coupling of Pt@Au core-shell NFs on spatial and temporal characteristics of plasmon-enhanced localized electric fields are explored. Importantly, time-resolved PINEM analysis reveals that the plasmonic fields around hexagonal NF prisms exhibit a spatially dependent excitation and decay rate, indicating a nuanced interplay between the spatial geometry of the NF and the temporal evolution of the localized electric field. These results and observations uncover nanophotonic energy transfer dynamics in NFs and highlight their potential for applications in biosensing and photocatalysis.

Imaging hot photocarrier transfer across a semiconductor heterojunction with ultrafast electron microscopy

Semiconductor heterojunctions have gained significant attention for efficient optoelectronic devices owing to their unique interfaces and synergistic effects. Interaction between charge carriers with the heterojunction plays a crucial role in determining device performance, while its spatial-temporal mapping remains lacking. In this study, we employ scanning ultrafast electron microscopy (SUEM), an emerging technique that combines high spatial-temporal resolution and surface sensitivity, to investigate photocarrier dynamics across a Si/Ge heterojunction. Charge dynamics are selectively examined across the junction and compared to far bulk areas, through which the impact of the built-in potential, band offsets, and surface effects is directly visualized. In particular, we find that the heterojunction drastically modifies the hot photocarrier diffusivities in both Si and Ge regions due to charge trapping. These findings are further elucidated with insights from the band structure and surface potential measured by complementary techniques. This work demonstrates the tremendous effect of heterointerfaces on hot photocarrier dynamics and showcases the potential of SUEM in characterizing realistic optoelectronic devices.

Delineation of the impact on temporal behaviors of off-axis photoemission in an ultrafast electron microscope

Efforts to push the spatiotemporal imaging-resolution limits of femtosecond laser-driven ultrafast electron microscopes (UEMs) to the combined angstrom–fs range will benefit from stable sources capable of generating high bunch charges. Recent demonstrations of unconventional off-axis photoemitting geometries are promising, but connections to the observed onset of structural dynamics are yet to be established. Here we use the in-situ photoexcitation of coherent phonons to quantify the relative time-of-flight (r-TOF) of photoelectron packets generated from the Ni Wehnelt aperture and from a Ta cathode set-back from the aperture plane. We further support the UEM experiments with particle-tracing simulations of the precise electron-gun architecture and photoemitting geometries. In this way, we measure discernible shifts in electron-packet TOF of tens of picoseconds for the two photoemitting surfaces. These shifts arise from the impact that the Wehnelt-aperture off-axis orientation has on the electron-momentum distribution, which modifies both the collection efficiency and the temporal-packet distribution relative to on-axis emission. Future needs are identified; we expect this and other developments in UEM electron-gun configuration to expand the range of material phenomena that can be directly imaged on scales commensurate with fundamental structural dynamics.

Spatiotemporal determination of photoinduced strain in a Weyl semimetal.

The application of dynamic strain holds the potential to manipulate topological invariants in topological quantum materials. This study investigates dynamic structural deformation and strain modulation in the Weyl semimetal WTe2, focusing on the microscopic regions with static strain defects. The interplay of static strain fields, at local line defects, with dynamic strain induced from photo-excited coherent acoustic phonons results in the formation of local standing waves at the defect sites. The dynamic structural distortion is precisely determined utilizing ultrafast electron microscopy with nanometer spatial and gigahertz temporal resolutions. Numerical simulations are employed to interpret the experimental results and explain the mechanism for how the local strain fields are transiently modulated through light-matter interaction. This research provides the experimental foundation for investigating predicted phenomena such as the mixed axial-torsional anomaly, acoustogalvanic effect, and axial magnetoelectric effects in Weyl semimetals, and paves the road to manipulate quantum invariants through transient strain fields in quantum materials.

Mapping Surface-Defect and Ions Migration in Mixed-Cation Perovskite Crystals.

Single crystal perovskites have garnered significant attention as potential replacements for existing absorber layer materials. Despite the extensive investigations on their photoinduced charge-carriers dynamics, most of the time-resolved techniques focus on bulk properties, neglecting surface characteristic which plays a crucial role for their optoelectronic performance. Herein, 4D ultrafast scanning electron microscopy (4D-USEM) is utilized to probing the photogenerated carrier transport at the first few nanometers, alongside density functional theory (DFT) to track both defect centers and ions migration. Two compositions of mixed cation are investigated: FA0.6MA0.4PbI3 and FA0.4MA0.6PbI3, interestingly, the former displays a longer lifetime compared to the latter due the presence of a higher surface-defect centers. DFT calculations fully support that revealing samples with higher FA content have a lower energy barrier for iodide ions to migrate from the bulk to top layer, assisting in passivating surface vacancies, and a higher energy diffusion barrier to escape from surface to vacuum, resulting in fewer vacancies and longer-lived hole-electron pairs. These findings manifest the influence of cation selection on charge carrier transport and formation of defects, and emphasize the importance of understanding ion migrations role in controlling surface vacancies to assist engineering high-performance optoelectronic devices based on single crystal perovskites.

Ultra-Nonlinear Subcycle Photoemission of Few-Electron States from Sharp Gold Nanotapers.

The generation of ultrashort electron wavepackets is crucial for the development of ultrafast electron microscopes. Recent studies on Coulomb-correlated few-electron number states, photoemitted from sharp metallic tapers, have shown emission nonlinearities in the multiphoton photoemission regime which scale with the electron number. Here, we study few-electron photoemission from gold nanotapers triggered by few-cycle near-infrared pulses, demonstrating extreme 20th-order nonlinearities for electron triplets. We report interferometric autocorrelation traces of the electron yield that are quenched to a single emission peak with subfemtosecond duration due to these high nonlinearities. The modulation of the emission yield by the carrier-envelope phase suggests that electron emission predominantly occurs during a single half cycle of the driving laser field. When applying a bias voltage to the tip, recollisions in the electron trajectories are suppressed and coherent subcycle electron beams are generated with promising prospects for ultrafast electron microscopy with subcycle time resolution.

Laser-Induced Stress-Driven Nanoplate Jumping Visualized by Ultrafast Electron Microscopy.

Understanding laser-induced jumping has attracted great interest in nanomaterial launching and transfer but requires a high spatiotemporal resolution visualization. Here, we report a jumping dynamics of nanoplate driven by ultrafast laser-induced stress using time-resolved transmission electron microscopy. Single-shot imaging reveals a nondestructive launching of gold nanoplates in several nanoseconds after the pulsed femtosecond laser excitation. The temperature rise and acoustic vibration, derived from ultrafast electron crystallography with a picosecond time resolution, confirm the existence of a laser-induced elastic stress wave. The generation, propagation, and reflection of thermal stress waves are further clarified by atomic simulation. The nonequilibrium ultrafast laser heating produces a compressive stress wave within several picoseconds, constrained by the supporting substrate under nanoplate to provide thrust force. This compressive stress is subsequently reflected into tensile stress by the substrate, promoting the nanoplate to jump off the substrate. Furthermore, the uneven interface adhesion results in the jumping flip of nanoplates, as well as, diminished their jumping speed. This study unveils the jumping regime driven by impulsive laser-excited stress and offers understanding of light-matter interaction.

Wehnelt photoemission in an ultrafast electron microscope: Stability and usability

We tested and compared the stability and usability of three different cathode materials and configurations in a thermionic-based ultrafast electron microscope: (1) on-axis thermionic and photoemission from a custom 100 μm diameter LaB6 source with a graphite guard ring, (2) off-axis photoemission from the Ni aperture surface of the Wehnelt electrode, and (3) on-axis thermionic and photoemission from a custom 200 μm diameter polycrystalline Ta source. For each cathode type and configuration, including the Ni Wehnelt aperture, we illustrate how the photoelectron beam-current stability is deleteriously impacted by simultaneous cooling of the source following thermionic heating. Furthermore, we demonstrate usability via collection of parallel- and convergent-beam electron diffraction patterns and by formation of the optimum probe size. We find that usability of the off-axis Ni Wehnelt-aperture photoemission is at least comparable to on-axis LaB6 thermionic emission, as well as to on-axis photoemission [the heretofore conventional approach to ultrafast electron microscopy (UEM) in thermionic-based instruments]. However, the stability and achievable beam currents for off-axis photoemission from the Wehnelt aperture were superior to that of the other cathode types and configurations, regardless of the electron-emission mechanism. Beam-current stability for this configuration was found to be ±1% (one standard deviation from the mean) for 70 min (longest duration tested), and steady-state beam current was reached within the sampling-time resolution used here (∼1 s) for 15 pA beam currents (i.e., 460 electrons per packet for a 200 kHz repetition rate). Repeatability and robustness of the steady-state condition were also found to be within ±1% of the mean. We discuss the implications of these findings for UEM imaging and diffraction experiments, for pulsed-beam damage measurements, and for practical switching between optimum conventional TEM and UEM operation within the same instrument.

Emerging Modalities for Condensed Matter Explorations Using Ultrafast Electron Microscopy

Emerging Modalities for Condensed Matter Explorations Using Ultrafast Electron Microscopy

Universal Carrier Dynamics in InAs and GaAs Revealed by Ultrafast Electron Microscopy

Universal Carrier Dynamics in InAs and GaAs Revealed by Ultrafast Electron Microscopy

Probing Photocarrier Dynamics in Wide Bandgap Semiconductors with UV-Pumped Scanning Ultrafast Electron Microscopy

Probing Photocarrier Dynamics in Wide Bandgap Semiconductors with UV-Pumped Scanning Ultrafast Electron Microscopy

Applications and Directions for Electrically Driven Ultrafast Electron Microscopy

Applications and Directions for Electrically Driven Ultrafast Electron Microscopy

Terahertz control and timing correlations in a transmission electron microscope.

Ultrafast electron microscopy provides a movie-like access to structural dynamics of materials in space and time, but fundamental atomic motions or electron dynamics are, so far, too quick to be resolved. Here, we report the all-optical control, compression, and characterization of electron pulses in a transmission electron microscope by the single optical cycles of laser-generated terahertz light. This concept provides isolated electron pulses and merges the spatial resolution of a transmission electron microscope with the temporal resolution that is offered by a single cycle of laser light. We also report the all-optical control of multi-electron states and find a substantial two-electron and three-electron anticorrelation in the time domain. These results open up the possibility to visualize atomic and electronic motions together with their quantum correlations on fundamental dimensions in space and time.

Quantum effects in the interaction of low-energy electrons with light.

The interaction between free electrons and optical fields constitutes a unique platform to investigate ultrafast processes in matter and explore fundamental quantum phenomena. Specifically, optically modulated electrons in ultrafast electron microscopy act as noninvasive probes that push space-time-energy resolution to the picometer-attosecond-microelectronvolt range. Electron energies well above the involved photon energies are commonly used, rendering a low electron-light coupling and, thus, only providing limited access to the wealth of quantum nonlinear phenomena underlying the dynamical response of nanostructures. Here, we theoretically investigate electron-light interactions between photons and electrons of comparable energies, revealing quantum and recoil effects that include a nonvanishing coupling of surface-scattered electrons to light plane waves, inelastic electron backscattering from confined optical fields, and strong electron-light coupling under grazing electron diffraction by an illuminated crystal surface. Our exploration of electron-light-matter interactions holds potential for applications in ultrafast electron microscopy.

A Femtosecond Electron-Based Versatile Microscopy for Visualizing Carrier Dynamics in Semiconductors Across Spatiotemporal and Energetic Domains.

Carrier dynamics detection in different dimensions (space, time, and energy) with high resolutions plays a pivotal role in the development of modern semiconductor devices, especially in low-dimensional, high-speed, and ultrasensitive devices. Here, a femtosecond electron-based versatile microscopy is reported that combines scanning ultrafast electron microscopy (SUEM) imaging and time-resolved cathodoluminescence (TRCL) detection, which allows for visualizing and decoupling different dynamic processes of carriers involved in surface and bulk in semiconductors with unprecedented spatiotemporal and energetic resolutions. The achieved spatial resolution is better than 10nm, and the temporal resolutions for SUEM imaging and TRCL detection are ≈500fs and ≈4.5ps, respectively, representing state-of-the-art performance. To demonstrate its unique capability, the surface and bulk carrier dynamics involved in n-type gallium arsenide (GaAs) are directly tracked and distinguished. It is revealed, in real time and space, that hot carrier cooling, defect trapping, and interband-/defect-assisted radiative recombination in the energy domain result in ordinal super-diffusion, localization, and sub-diffusion of carriers at the surface, elucidating the crucial role of surface states on carrier dynamics. The study not only gives a comprehensive physical picture of carrier dynamics in GaAs, but also provides a powerful platform for exploring complex carrier dynamics in semiconductors for promoting their device performance.

Field-free transformations of topological spin textures in ferrimagnetic TbFeCo films

The generation of topological spin textures under ultrafast laser pulse excitations and field-free manipulation of topological transitions between different spin textures has attracted enormous interest from the perspective of spintronic applications. Here, we utilize ultrafast electron microscopy to showcase the femtosecond laser pulses excitation on magnetic materials and have generated multiple topological spin textures in an amorphous ferrimagnetic TbFeCo film. Furthermore, the following field-free topological transitions between skyrmions and bubbles with diversified topology are identified via in situ heating the sample in Lorentz transmission electron microscopy. The critical role of uniaxial anisotropy variation on changing the magnetic textures during the heating process is confirmed by micromagnetic simulations. Our results provide a perspective on the generation and transformation of topological spin textures.

Nanosecond Structural Dynamics during Electrical Melting of Charge Density Waves in 1T-TaS_{2}.

Electrical control of charge density waves has been of immense interest, as the strong underlying electron-lattice interactions potentially open new, efficient pathways for manipulating their ordering and, consequently, their electronic properties. However, the transition mechanisms are often unclear as electric field, current, carrier injection, heat, and strain can all contribute and play varying roles across length scales and timescales. Here, we provide insight on how electrical stimulation melts the room temperature charge density wave order in 1T-TaS_{2} by visualizing the atomic and mesoscopic structural dynamics from quasi-static to nanosecond pulsed melting. Using a newly developed ultrafast electron microscope setup with electrical stimulation, we reveal the order and strain dynamics during voltage pulses as short as 20ns. The order parameter dynamics across a range of pulse amplitudes and durations support a thermally driven mechanism even for fields as high as 19 kV cm^{-1}. In addition, time-resolved imaging reveals a heterogeneous, mesoscopic strain response across the flake, including MHz-scale acoustic resonances that emerge during sufficiently short pulsed excitation which may modulate the order. These results suggest that metallic charge density wave phases like studied here may be more robust to electronic switching pathways than insulating ones, motivating further investigations at higher fields and currents in this and other related systems.

Picosecond carrier dynamics in InAs and GaAs revealed by ultrafast electron microscopy.

Understanding the limits of spatiotemporal carrier dynamics, especially in III-V semiconductors, is key to designing ultrafast and ultrasmall optoelectronic components. However, identifying such limits and the properties controlling them has been elusive. Here, using scanning ultrafast electron microscopy, in bulk n-GaAs and p-InAs, we simultaneously measure picosecond carrier dynamics along with three related quantities: subsurface band bending, above-surface vacuum potentials, and surface trap densities. We make two unexpected observations. First, we uncover a negative-time contrast in secondary electrons resulting from an interplay among these quantities. Second, despite dopant concentrations and surface state densities differing by many orders of magnitude between the two materials, their carrier dynamics, measured by photoexcited band bending and filling of surface states, occur at a seemingly common timescale of about 100 ps. This observation may indicate fundamental kinetic limits tied to a multitude of material and surface properties of optoelectronic III-V semiconductors and highlights the need for techniques that simultaneously measure electro-optical kinetic properties.