Design Of Ultra-wideband Low Noise Amplifier Research Articles

A novel UWB low-noise amplifier design using double capacitor cross-coupled feedback

In this paper, an ultra-wideband (UWB) low noise amplifier (LNA) with improvement in noise figure (NF) and gain flatness using 0.18-um RF CMOS technology is presented. Two cross-coupled capacitors (CCC) and new gain flattening technique in a cascode common-gate structure are used for NF and gain flatness improvement, respectively. In addition, NF calculation of CCC cascode common-gate amplifier is presented considering the noise of cascode stage. The LNA operates from 3.1 GHz up to 10.6 GHz with no change in power consumption compared with conventional one. The proposed LNA achieves average S21 of 21dB and S11 less than −10 dB in the entire bandwidth. Additionally, the minimum NF of 2.38 dB is achieved. Furthermore, the power consumption at 1.8 V supply voltage is 4.34 mW and the core layout size for proposed LNA using CCC with and without including new gain flattening techniques are 881μm×1201μm and 680μm×733μm, respectively.

3.1–10.6 GHz ultra-wideband LNA design using dual-resonant broadband matching technique

This paper presents an ultra-wideband low noise amplifier design using the dual-resonant broadband matching technique. The proposed LNA achieves a 10.2dB gain with ±0.9dB gain flatness over a frequency range of 3.1–10.6GHz and a −3-dB bandwidth of 2.4–11.6GHz. The measured noise figure ranges from 3.2 to 4.7dB over 3.1–10.6GHz. At 6.5GHz, the measured IIP3 and input-referred P1dB are +6dBm and −5dBm, respectively. The proposed LNA occupies an active chip area of 0.56mm2 in a TSMC 0.18μm RF-CMOS process and consumes 16mW from a 1.8V supply.