Ultrahigh Energy Storage Performance Research Articles

Achieving ultrahigh energy storage performance of PBLZST-based antiferroelectric composite ceramics via interfacial polarization engineering

Antiferroelectric (AFE) ceramics can be used in pulse power devices for high power density and fast discharge. Composites are recognized as an effective strategy to combine the benefits of different materials but suffer from interfacial mismatch and interfacial polarization. In this work, a combination of high-breakdown Pb0.94La0.04(Zr0.99-xSnxTi0.01)O3 (PLZST) with high-efficiency Pb0.8925Ba0.04La0.045(Zr0.65Sn0.3Ti0.05)O3 (PBLZST) is explored to enhance energy storage performance. Via adjusting Sn content in PLZST, the difference in lattice and dielectric properties between two phases are reduced, decreasing interfacial polarization. The breakdown strength of PBLZST-PLZST is boosted from 285 kV cm−1 to 345 kV cm−1, with maximum polarization strength decreasing from 44 μC cm−2 to 36 μC cm−2. An recoverable energy density (Wre ∼ 7.152 J cm−3) and discharged efficiency (η ∼ 90.5%) has been achieved in Pb0.8925Ba0.04La0.045(Zr0.65Sn0.3Ti0.05)O3-Pb0.94La0.04(Zr0.69Sn0.3Ti0.01)O3 (x = 0.3) composite ceramics. These findings highlight the potential of interfacial polarization engineering for developing composite ceramics with high-energy storage performance.

Novel NaNbO3-based relaxors featuring ultrahigh energy storage performance

Ferroelectric ceramics with ultrahigh power density and fast charging/discharging are attracting increasing attention. The practical application of most antiferroelectric ceramics in current electronics is significantly limited by their poor recoverable energy storage density. Here, a novel system ceramic of (1-x) Na0.84Ca0.16Nb0.84Ti0.16O3-xBiZn2/3Nb1/3O3 (NCNT-xBZN) solid solutions, possessing a giant Wrec∼7.05 J cm−3 and excellent conversion efficiency (η)∼83.7% under 53 kV mm−1, was synthesized to exhibit superior stability with changing temperature, frequency and fatigue behavior, together with the large current density (CD=571.8 A cm−2), ultrahigh power density (PD=85.7 MW cm−3) and ultrafast discharge rate (∼200 ns). These outstanding properties are attributed to the phase transformation from the AFE R to the FE Q phase, accompanied by the smashing of sub-microdomains into polar nanoregions, as the BZN content raises. The experimental results disclose that the synergistic effect of the highly dynamic response of polar nanoregions and the local lattice distortion arising from the disruption of long-range polar ordering by heterovalent ion filling generates a delayed saturation polarization with a strong relaxor behavior, thereby optimizing the energy storage density. The unique combination, together with a simple synthesis strategy, offers a refreshing strategy for the development of dielectric materials.

Ultrahigh energy storage performance in AN-based superparaelectric ceramics

Ceramics capacitors, especially featuring antiferroelectric (AFE) structure, are widely used in pulsed power electronic systems due to distinctive high-power density and external field stability. Lead-free AFE material AgNbO3 has seized substantial research attention owing to its unique temperature driven multi-level phase transitions, and many works have greatly improved the energy storage properties by engineering these temperature-dependent phase boundaries. In this work, an ever-unadopted strategy was proposed to modulate the relaxor structure in AgNbO3 by designing room-temperature (RT) superparaelectric phase via Bi incorporation into AN lattice matrix. Structural analysis shows M phase (space group Pbcm) evolves into O phase (space group Cmcm) with 12 mol.% Bi-substitution, breaking the long-range AFE order into polar nanoregions. Hence, an ultra-high recoverable energy density (7.6 J/cm3) and a high efficiency (79 %) are simultaneously achieved in the Ag0.64Bi0.12NbO3 ceramics under 52.2 kV/mm. Moreover, the excellent energy storage properties are accompanied with good temperature and frequency stability, with the variation of Wrec less than ± 15% (over 25–120 °C) and ± 10% (over 1–200 Hz) under 25 kV/mm, respectively. The novel approach reported herein provides a new guidance for designing AgNbO3-based and other AFE materials for high-performance energy storage applications.

NaNbO3‐Based Multilayer Ceramic Capacitors with Ultrahigh Energy Storage Performance

AbstractWith the gradual promotion of new energy technologies, there is a growing demand for capacitors with high energy storage density, high operating temperature, high operating voltage, and good temperature stability. In recent years, researchers have been devoted to improving the energy storage properties of lead‐based, titanium‐based, and iron‐based multilayer ceramic capacitors (MLCCs). However, limited research has been conducted into MLCC development using NaNbO3 (NN)‐based materials. In this paper, the successful achievement of excellent overall energy storage performance in a novel NaNbO3–(Bi0.5Na0.5)TiO3–Bi(Mg0.5Hf0.5)O3 lead‐free MLCCs is presented. The disordered tilting around the cp axis, disrupts Na and Bi ions' long‐range displacements and induces PNRs and strong relaxor behavior, which ensures a superior energy storage performance, together with the multilayer ceramic design strategy. As a result, the NN‐based MLCC device presents an ultra‐high Wrec = 12.65 J cm−3 and η = 88.5%, simultaneously showing superior temperature stability (Wrec varies <±1% and η varies <±6% from −50 to 125 °C) and fatigue resistance (Wrec and η vary <±1% over 107 cycles). This study highlights the advanced energy storage potential of NaNbO3‐based MLCCs for various applications, and ushers in a new era for designing high‐performance lead‐free capacitors that can operate in harsh environments.

NaNbO3-based short-range antiferroelectric ceramics with ultrahigh energy storage performance

NaNbO3-based short-range antiferroelectric ceramics with ultrahigh energy storage performance

Achieving Ultrahigh Energy Storage Performance for NaNbO3-Based Lead-Free Antiferroelectric Ceramics via the Coupling of the Stable Antiferroelectric R Phase and Nanodomain Engineering.

NaNbO3(NN)-based lead-free eco-friendly antiferroelectric (AFE) ceramics with an extremely high maximum polarization (Pm) are believed to be a promising alternative to traditional lead-based ceramics. Nevertheless, the high energy dissipation resulting from the large polarization hysteresis, which arises from the AFE-ferroelectric (FE) phase transition, poses a great challenge to the application of this promising ceramic. Herein, an excellent recoverable energy storage density (Wrec) was attained by intentionally designing a (0.86 - x) NaNbO3-0.14CaTiO3-xBiMg2/3Nb1/3O3 (NN-CT-xBMN) relaxor antiferroelectric ceramic, attributed to the synergistic effect of the stable AFE R phase and nanodomain engineering to overcome the bottleneck. The obtained results illustrate that the inclusion of BMN causes the transition from AFE microdomains to nanodomains and stabilizes the relaxor AFE orthorhombic R phase, which generates a highly stable polarization field response with low hysteresis and delays the AFE-FE phase transition, thus improving energy storage density. As a consequence, a high Wrec of 5.41 J cm-3 with an excellent conversion efficiency η of 86.7% was obtained in the NN-CT-0.08BMN ceramic. Moreover, the NN-CT-0.08BMN ceramic exhibits superior stability in temperature (25-150 °C), frequency (1-600 Hz), and fatigue behavior (10°-104 cycles) together with a large current density (CD = 810 A cm-2), ultrahigh power density (PD = 118 MW cm-3), and ultrafast discharge rate (t0.9 < 0.7 μs). This superior energy storage density, coupled with outstanding stability, suggests that the NN-CT-0.08BMN ceramic has the potential to be a promising candidate for pulsed power applications and power electronics.

BaTiO3-Based Ferroelectric Thin Film Capacitor on Silicon for Ultra-High Energy Storage Performance at Low Electric Field Strength

In the case of dielectric energy storage devices, excessive pursuit of giant electric fields means greater exposure to high temperatures and insulation damage risk. Ferroelectric thin film devices offer opportunities for energy storage needs under finite electric fields due to their intrinsically large polarization and the advantage of small size. Herein, we designed the capacitor’s dielectric layer by doping barium titanate Ba <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">(1-x)</sub> Ce <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> TiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> (BCTO). The addition of highly charged ions Ce <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3+</sup> induce cell shrinkage thus further optimizing the ferroelectric polarization. Accordingly, the capacitor with Au/BCTO/Au structure integrated directly on silicon substrate showed excellent energy storage performance ( <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">W_rec</i> ≈ 92.6 J/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sup> and η ≈ 86.5%) under only 1961 kV/cm. In addition, we significantly increased the electrical breakdown strength from 1726 kV/cm to 3426 kV/cm by adjusting the Ba <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.95</sub> Ce <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.05</sub> TiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> film thickness, thus achieving ultra-high energy storage density (107.9 J/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sup> ). The results expand the application prospects of silicon-based ferroelectric capacitors for energy storage at low electric field strength.

Ultrahigh energy storage performance realized in AgNbO 3-based antiferroelectric materials via multiscale engineering

Ultrahigh energy storage performance realized in AgNbO ₃-based antiferroelectric materials via multiscale engineering

Ultra-high energy storage performance in Bi5Mg0.5Ti3.5O15 film via a low temperature-induced ergodic relaxation state

Good low-temperature energy storage characteristics are conducive to the successful merger of Si-based semiconductor technology with dielectric energy storage films. Due to low maximum polarization intensity and poor crystallinity at low temperatures, however, it is difficult for dielectric energy storage films to attain excellent dielectric energy storage properties. Herein, Bi5Mg0.5Ti3.5O15 films accomplish the shift from a non-ergodic relaxor state to an ergodic relaxation state by lowering the annealing temperature, which simultaneously increases insulating characteristics. The energy loss is reduced while maintaining a high polarization intensity and high breakdown electric field, which results in the ultra-high energy storage density (122.2 J/cm3) and efficiency (77.3 %) of the Bi5Mg0.5Ti3.5O15 film at an annealing temperature of 500 °C. Meanwhile, the Bi5Mg0.5Ti3.5O15 films show excellent stability in terms of temperature (−20 °C to 150 °C), frequency (0.05 kHz–20 kHz), and fatigue resistance (1 ×108). The domain states and insulation properties of temperature-controlled films are used in this work to achieve ultra-high energy storage properties, and a concise and feasible scheme for the application of low temperature energy storage films in semiconductor technology is provided.

Sandwiched Polymer Nanocomposites Reinforced by Two-Dimensional Interface Nanocoating for Ultrahigh Energy Storage Performance at Elevated Temperatures.

Polymer-based dielectrics are essential components in electrical and power electronic systems for high power density storage and conversion. A mounting challenge for polymer dielectrics is how to maintain their electrical insulation at not only high electric fields but also elevated temperatures, in order to meet the growing needs for renewable energies and grand electrifications. Here, a sandwiched barium titanate/polyamideimide nanocomposite with reinforced interfaces via two-dimensional nanocoatings is presented. It is demonstrated that boron nitride and montmorillonite nanocoatings can block and dissipate injected charges, respectively, to present a synergetic effect on the suppression of conduction loss and the enhancement of breakdown strength. Ultrahigh energy densities of 2.6, 1.8, and 1.0 J cm-3 are obtained at 150 °C, 200 °C, and 250 °C, respectively, with a charge-discharge efficiency >90%, far outperforming the state-of-the-art high-temperature polymer dielectrics. Cyclic charge-discharge tests up to 10 000 times verify the excellent lifetime of the interface-reinforced sandwiched polymer nanocomposite. This work provides a new pathway to design high-performance polymer dielectrics for high-temperature energy storage via interfacial engineering.

Delayed Polarization Saturation Induced Superior Energy Storage Capability of BiFeO3 -Based Ceramics Via Introduction of Non-Isovalent Ions.

Electrostatic capacitors are emerging as a highly promising technology for large-scale energy storage applications. However, it remains a significant challenge to improve their energy densities. Here, an effective strategy of introducing non-isovalent ions into the BiFeO3 -based (BFO) ceramic to improve energy storage capability via delaying polarization saturation is demonstrated. Accordingly, an ultra-high energy density of up to 7.4 J cm-3 and high efficiency ≈ 81% at 680kV m-1 are realized, which is one of the best energy storage performances recorded for BFO-based ceramics. The outstanding comprehensive energy storage performance is attributed to inhibiting the polarization hysteresis resulting from generation ergodic relaxor zone and random field, and generating highly-delayed polarization saturation with continuously-increased polarization magnitudes with the electric field of supercritical evolution. The contributions demonstrate that delaying the polarization saturation is a consideration for designing the next generation of lead-free dielectric materials with ultra-high energy storage performance.

Excellent energy storage performance of (Sc0.5Ta0.5)4+ modified (Bi0.5Na0.5)TiO3-based ceramics modulated by the evolution of polar phases

An ultrahigh energy storage performance is achieved in the BNST-20% (Sc0.5Ta0.5)4+ ceramic via chemical modification, which could induce the evolution of oxygen vacancies and local polar phases to achieve a high saturation polarization.

Ultrahigh energy storage performance of a 0.75Bi0.47Na0.47Ba0.06TiO3-0.25CaTi0.8Sn0.2O3 ceramic under moderate electric fields

The development of ceramic capacitors featuring high reliability and superior comprehensive performance is vital for practical applications in medium electric fields.

Phase and Band Structure Engineering via Linear Additive in NBT-ST for Excellent Energy Storage Performance with Superior Thermal Stability.

Lead-free relaxor ferroelectric ceramics with ultrahigh energy-storage performance are vital for pulsed power systems. We herein propose a strategy of phase and band structure engineering for high-performance energy storage. To demonstrate the effectiveness of this strategy, (1 - x)(0.75Na0.5Bi0.5TiO3-0.25SrTiO3)-xCaTi0.875Nb0.1O3 (NBT-ST-xCTN, x = 0.1, 0.2, 0.3, 0.4, and 0.5) samples were designed and fabricated via the solid-state reaction method. The linear dielectric CTN was used as a modulator to tune both phase and band structures of the tested system. Our results show that both rhombohedral phase (R-phase) and tetragonal phase (T-phase) coexist in the samples. The R/T ratio decreases, while the band gap increases with increasing CTN content. The best energy-storage properties with large energy storage density (Wrec = 7.13 J/cm3), a high efficiency (η = 90.3%), and an ultrafast discharge time (25 ns) were achieved in the NBT-ST-0.4CTN sample with R/T = 0.121. Importantly, along with its excellent energy-storage performance, the sample exhibited superior thermal stability with the variations of Wrec ≤ 7% and η ≤ 10% over the wide temperature range of 233-413 K. This work suggests that this engineering of phase and band structures is a promising strategy to achieve superior energy-storage properties in lead-free ceramics.

Local Diverse Polarization Optimized Comprehensive Energy-Storage Performance in Lead-Free Superparaelectrics.

Lead-free dielectric ceramics with ultrahigh energy-storage performance are the core components used in next-generation advanced pulse power capacitors. However, the low energy storage density largely hinders their development towards miniaturization, lightweight, and integration. Here, an effective strategy of constructing local diverse polarization is designed in superparaelectrics to realize an ultrahigh energy storage density of ≈10.59 J cm-3 as well as a large efficiency of ≈87.6%. The excellent comprehensive energy-storage performance is mainly attributed to the design of ultrasmall polar nanoregions with local diverse polarization configuration, confirmed by scanning transmission electron microscopy, leading to the reduced heat loss, substantially enhanced polarization, and breakdown electric field compared to ceramics with single polarization configuration. Benefiting from these features, outstanding temperature/frequency/cycling stability and superior charge/discharge performance (power density ≈187.5 MW cm-3 , discharge energy density ≈3.52 J cm-3 , discharge rate ≈77ns) are also achieved. This work demonstrates that local diverse polarization is a super strategy to design new dielectric materials with high energy-storage performance.

Enhanced electrochemical performance of flexible asymmetric supercapacitor based on novel nanostructured activated fullerene anchored zinc cobaltite

The rational design and development of nanostructured materials having unique structural and superior electrochemical activity is urgently required for achieving ultra-high energy storage performance. In this regard, activated fullerene decorated over zinc cobaltite (A-C60-ZCO) has been synthesized and its performance evaluation was displayed towards supercapacitor application. As synthesized nanocomposite shows the enhanced specific capacitance of 593.2 F/g at a scan rate of 1 mV/S and retained the capacitance of 83.7% till 5000 cycles at a high current density of 8 A/g. The enhanced performance can be attributed to the hybrid nature of the prepared material, where A-C60 enhances the stability and conductivity and the ZCO enhances the charge storage owing to its pseudo capacitive nature. The incorporation of A-C60 immensely improved the specific capacitance and cyclic stability of the nanocomposite by enhancing hydrophilicity, conductivity, ion/electron transport ability, redox active functional groups and electroactive sites. Furthermore, the constructed flexible asymmetric supercapacitor device provided an energy density of 36.43 Wh/kg at a power density of 1681.47 W/kg, with a superior cycling performance of 91.06% capacitance retention after 5000 cycles at 6 A/g. Owing to the impressive electrochemical performance A-C60-ZCO can be considered as the potential candidate for supercapacitor application.

Excellent energy‐storage property and thermal stability of PLZT‐based antiferroelectric ceramics

Abstract(Pb, La)(Zr, Ti)O3 antiferroelectric (AFE) materials are promising materials due to their energy‐storage density higher than 10 J cm−3, but their low energy‐storage efficiency and poor temperature stability limit their application. In this paper, the (1 − x)(Pb0.9175La0.055)(Zr0.975Ti0.025)O3–xPb(Yb1/2Nb1/2)O3 (PLZTYN100x) AFE ceramics were prepared via two‐step sintering method and investigated thoroughly. With the doping of Yb3+ and Nb5+, the phase structure transforms from the orthorhombic phase (AFEO) to the coexistence of the orthorhombic‐and‐tetragonal phases. This structure reduces the free energy difference between the AFE and ferroelectric phases and reduces the fluctuation of energy with temperature, improving the energy storage efficiency and temperature stability. When the x = 0.05 (PLZTYN5), the AFE ceramic exhibits excellent temperature stability and ultrahigh energy storage performance, whose recoverable energy density (Wrec) is 6.8–8.2 J cm−3 at 30 kV mm−1 in the temperature range from −55 to 75°C, and efficiency (ƞ) is 78%–86.7%. In addition, the change of Wrec is less than 15%, exceeding the performance of most AFE ceramics. The results demonstrate that the PLZTYN5 ceramic has great potential in pulse power capacitors.

Achieving ultrahigh energy storage performance in BiFeO3-BaTiO3 based lead free relaxors via a composition optimization strategy

The 0.63(1-x)Bi1.02FeO3-0.37BaTiO3-xBi(Zn2/3(Nb0.85Ta0.15)1/3)O3 (abbreviated BF-BT-xBZNT) high temperature dielectric ceramics were prepared via a two-step sintering (TTS) method. The appropriate medium permittivity achieved in the BF-BT-0.13BZNT ceramic is conducive to mitigating the polarization saturation and improving the breakdown field strength. The domain evolution behavior from piezoresponse force microscopy (PFM) reveals that the introduction of BZNT promotes the formation and switching of more nanodomains of BF-BT ceramics, facilitating the enhancement of energy storage efficiency. The excellent energy storage performance of total energy storage density (Wtot) of 6.06 J/cm3, recoverable energy storage density (Wrec) of 4.85 J/cm3 and a high energy storage efficiency (η) of 80% are simultaneously obtained under 410 kV/cm in the BF-BT-0.13BZNT ceramic. Meanwhile, the ceramic exhibits excellent thermal endurance (10–130 ℃), frequency (1–100 Hz) and fatigue (105 cycles) stability. The current work provides a promising strategy for designing high-performance dielectric energy storage materials which operate in harsh environments.

Energy storage performance of silicon-integrated epitaxial lead-free BaTiO3-based capacitor

With the rapid development of advanced electronic devices towards miniaturization and integration, silicon integrated lead-free ferroelectric film capacitors have attracted extensive attention due to their excellent energy storage performance and fast charge/discharge speed. In this study, the BaZr0.15Ti0.85O3 (BZT15) film capacitors have been epitaxially integrated on Si (0 0 1) substrate with the buffer layers of Graphene/La0.67Sr0.33MnO3/CeO2/Y2O3-stabilized ZrO2 (G/L-C-Y). The highly epitaxial crystalline quality improves significantly the energy storage performance. The layer of G has been found to further improve the high temperature energy storage performance due to its heat dissipation effect. The energy storage density (Wre) of the BZT15 film capacitor with the buffer layers reaches 112.35 J/cm3 with energy storage efficiency (η) of 76.7 % at room temperature, which is about 55.29 % and 9.18 % higher than that of the BZT15 film capacitor without buffer layers, respectively. Moreover, the BZT15 film capacitor with the buffer layer shows an ultra-high Wre of 70.36 J/cm3 and an ultra-high η of 81.22 % at 200 °C, which are 74.55 % and 17.13 % higher than that of BZT15 film capacitor without buffer layer. More importantly, the fluctuation of Wre and η of optimized BZT15 film capacitor is only 8.85 % and 1.30 % in the wide temperature range from −100 to 200 °C, respectively. Our studies provide an effective multi-strategy approach combining interface designing and thermal management for the epitaxially integration of dielectric film capacitors on Si substrates to obtain ultra-high energy storage performance in ultra-wide working temperature.

Ultra-High Energy Storage Performance in BNT-based Ferroelectric Ceramics with Simultaneously Enhanced Polarization and Breakdown Strength

Ultra-High Energy Storage Performance in BNT-based Ferroelectric Ceramics with Simultaneously Enhanced Polarization and Breakdown Strength