In this article, we demonstrate the design and simulation of a copper indium gallium diselenide (CIGS)-based highly-efficient n-CdS/p-CIGS/p+-CGS dual-heterojunction (DH) solar cell. The simulation has been performed using SCAPS-1D software with reported experimental physical parameters. The simulated efficiency of our proposed solar cell arises to 47% with open circuit voltage, VOC = 0.98 V, short circuit current density, JSC = 59.94 mA/cm2 and fill factor, FF = 80.07%, respectively. Such a high short circuit current and corresponding elevated efficiency are predominantly originated from the longer wavelength absorption of photons through a tail-states-assisted (TSA) two-step upconversion in the copper gallium diselenide (CGS) Back surface field (BSF) layer of the DH solar cells. The suggested method numerically approaches the Shockley-Queisser (SQ) detailed balance limit, providing a possible opportunity of enhancing existing photovoltaic (PV) parameters to the researchers as well as manufacturers.
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