Two-dimensional Van Der Waals Research Articles

Strain-Controlled Electronic and Magnetic Properties of Janus Nitride MXene Monolayer MnCrNO2

Two-dimensional (2D) van der Waals (vdW) magnetic materials show potential for the advancement of high-density, energy-efficient electronic and spintronic applications in future memory and computation. Here, by using first-principles density functional theory (DFT) calculations, we predict a new 2D Janus nitride MXene MnCrNO2 monolayer. Our results suggest that the optimized MnCrNO2 monolayer possesses a hexagonal structure and exhibits good dynamical stability. The intrinsic monolayer MnCrNO2 exhibits semiconductive properties and adopts a ferromagnetic ground state with an out-of-plane easy axis. It can sustain strain effects within a wide range of strains from −10% to +8%, as indicated by the phonon dispersion spectra. Under the biaxial tensile strain, a remarkable decrease in the bandgap of the MnCrNO2 is induced, which is attributed to the distinct roles played by Mn and Cr in the VBM or CBM bands. Furthermore, when the compressive strain reaches approximately −8%, the magnetic anisotropy undergoes a transition from an out-of-plane easy axis to an in-plane easy axis. This change is mainly influenced by the efficient hybridization of the d orbitals, particularly in Mn atoms. Our study of the Janus MXene MnCrNO2 monolayer indicates its potential as a promising candidate for innovative electronic and spintronic devices; this potential is expected to create interest in its synthesis.

Above-room-temperature intrinsic ferromagnetism in ultrathin van der Waals crystal Fe3+xGaTe2

Two-dimensional (2D) van der Waals (vdW) magnets are crucial for ultra-compact spintronics. However, so far, no vdW crystal has exhibited tunable above-room-temperature intrinsic ferromagnetism in the 2D ultrathin regime. Here, we report the tunable above-room-temperature intrinsic ferromagnetism in ultrathin vdW crystal Fe3+xGaTe2 (x = 0 and 0.3). By increasing the Fe content, the Curie temperature (TC) and room-temperature saturation magnetization of bulk Fe3+xGaTe2 crystals are enhanced from 354 to 376 K and 43.9 to 50.4 emu·g−1, respectively. Remarkably, the robust anomalous Hall effect in 3-nm Fe3.3GaTe2 indicates a record-high TC of 340 K and a large room-temperature perpendicular magnetic anisotropy energy of 6.6 × 105 J m−3, superior to other ultrathin vdW ferromagnets. First-principles calculations reveal the asymmetric density of states and an additional large spin exchange interaction in ultrathin Fe3+xGaTe2 responsible for robust intrinsic ferromagnetism and higher TC. This work opens a window for above-room-temperature ultrathin 2D magnets in vdW-integrated spintronics.

Dynamic Behavior of Above-Room-Temperature Robust Skyrmions in 2D Van der Waals Magnet.

Magnetic skyrmions are swirl-like spin configurations that present topological properties, which have great potential as information carriers for future high-density and low-energy-consumption devices. The optimization of skyrmion-hosting materials that can be integrated with semiconductor-based circuits is the primary challenge for their industrialization. Two-dimensional van der Waals ferromagnets are emerging materials that have excellent carrier mobility and compatibility with integrated circuits, making them an ideal candidate for spintronic devices. Here, we report the realization of skyrmions at above room temperature in the 2D ferromagnet Fe3GaTe2. The thickness tunability of their skyrmion size and the formation of the skyrmion lattice are revealed. Furthermore, we demonstrate that the skyrmions can be moved by a low-density current at room temperature, together with an apparent skyrmion Hall effect, which is consistent with our quantitative micromagnetic simulation. Our work offers a promising 2D material platform for harnessing magnetic skyrmions in practical device applications.

Nanotube spin defects for omnidirectional magnetic field sensing

Optically addressable spin defects in three-dimensional (3D) crystals and two-dimensional (2D) van der Waals (vdW) materials are revolutionizing nanoscale quantum sensing. Spin defects in one-dimensional (1D) vdW nanotubes will provide unique opportunities due to their small sizes in two dimensions and absence of dangling bonds on side walls. However, optically detected magnetic resonance of localized spin defects in a nanotube has not been observed. Here, we report the observation of single spin color centers in boron nitride nanotubes (BNNTs) at room temperature. Our findings suggest that these BNNT spin defects possess a spin S = 1/2 ground state without an intrinsic quantization axis, leading to orientation-independent magnetic field sensing. We harness this unique feature to observe anisotropic magnetization of a 2D magnet in magnetic fields along orthogonal directions, a challenge for conventional spin S = 1 defects such as diamond nitrogen-vacancy centers. Additionally, we develop a method to deterministically transfer a BNNT onto a cantilever and use it to demonstrate scanning probe magnetometry. Further refinement of our approach will enable atomic scale quantum sensing of magnetic fields in any direction.

Enhanced magnetism derived from pore-edge spins in thin Fe3GeTe2 nanomeshes

The growth of two-dimensional van der Waals magnetic materials presents attractive opportunities for exploring new physical phenomena and valuable applications. Among these materials, Fe3GeTe2(FGT) exhibits a variety of remarkable properties and has garnered significant attention. Herein, we have for the first time created a nanomesh structure-a honeycomb-like array of hexagonal nanopores-with the zigzag pore-edge atomic structure on thin FGT flakes with and without oxidation of the pore edges. It is revealed that the magnitude of ferromagnetism (FM) significantly increases in both samples compared with bulk flakes without nanomeshes. Critical temperature annealing results in the formation of zigzag pore edges and interpore zigzag-edge nanoribbons. We unveil that the non-oxide (O) termination of the Fe dangling bonds on these zigzag edges enhances FM behavior, while O-termination suppresses this FM by introducing antiferromagnetic behavior through edge O-Fe coupling. FGT nanomeshes hold promise for the creation of strong FM and their effective application in magnetic and spintronic systems.

Tunable Ultrafast Charge Transfer across Homojunction Interface.

Charge transfer at heterojunction interfaces is a fundamental process that plays a crucial role in modern electronic and photonic devices. The essence of such charge transfer lies in the band offset, making charge transfer uncommon in a homojunction. Recently, sliding ferroelectricity has been proposed and confirmed in two-dimensional van der Waals stacked materials such as bilayer boron nitride. During the sliding of these layers, the band alignment shifts, creating conditions for charge separation at the interface. We employ ab initio nonadiabatic molecular dynamics simulations to elucidate the excited state carrier dynamics in bilayer boron pnictides. We propose that, akin to ferroelectric polarization flipping, the precise modulation of the distribution of excited state carriers can also be reached by sliding. Our results demonstrate that sliding induces a reversal of the frontier orbital distribution on the upper and lower layers, facilitating a robust interlayer carrier transfer. Notably, the interlayer carrier transfer is more pronounced in boron phosphide than in boron nitride, attributed to strong electron scattering in momentum space in boron nitride. We propose this novel method to manipulate carrier distribution and dynamics in a homojunction exhibiting sliding ferroelectricity, in general, paving a new way for developing advanced electronic and photonic devices.

Interfacial engineering of orbital orientation for perpendicular magnetic anisotropy in Co-implanted CrI3 monolayer

Two-dimensional (2D) van der Waals (vdW) magnets are believed to be promising candidates for next-generation information storage, which requires both high Curie points (TC) and large perpendicular magnetic anisotropy (PMA). As one of the most well-known 2D magnets, CrI3 has large PMA but a relatively low TC. Recent theoretical works proposed that implanting metal atoms into the hollow sites of CrI3 could greatly boost TC. However, this process may have the unintended consequence of reducing the PMA and introducing in-plane magnetic anisotropy (IMA) instead. It is, therefore, highly required to implement an additional technique to enhance the PMA. In this work, we use the first-principles method to study the underlying mechanisms of the suppressed PMA (and induced IMA) in the Co-implanted CrI3 monolayer [denoted as Co-(CrI3)2] as an example. It is found that the Co-implantation-induced itinerant electrons cause the transition from PMA to IMA by tuning the orbital orientation of the states around the Fermi level, noting that an in-plane (or out-of-plane) electronic orbital leads to the out-of-plane (or in-plane) momentum that favors PMA (or IMA) due to the spin–orbit coupling. In order to restore the PMA, we predict that using the vdW substrate PtTe2 to construct a heterostructure with the Co-(CrI3)2 monolayer not only reduces the contributions of the interfacial out-of-plane orbitals but also generates additional intralayer in-plane orbitals, both supporting the PMA. Thus, this work provides alternative perspectives on enhancing PMA by interfacial engineering of orbital orientation, paving the way for the development of 2D strong magnets.

Slip Opacity and Fast Osmotic Transport of Hydrophobes at Aqueous Interfaces with Two-Dimensional Materials.

We investigate the interfacial transport of water and hydrophobic solutes on van der Waals bilayers and heterostructures formed by stacking graphene, hBN, and MoS2 using extensive ab initio molecular dynamics simulations. We compute water slippage and the diffusio-osmotic transport coefficient of hydrophobic particles at the interface by combining hydrodynamics and the theory of the hydrophobic effect. We find that slippage is dominated by the layer that is in direct contact with water and only marginally altered by the second layer, leading to a so-called "slip opacity". The screening of the lateral forces, where the liquid does not feel the forces coming from the second nearest layer, is one of the factors leading to the "slip opacity" in our systems. The diffusio-osmotic transport of small hydrophobes (with a radius below 2.5 Å) is also affected by the slip opacity, being dramatically enhanced by slippage. Furthermore, the direction of diffusio-osmotic flow is controlled by the solute size, with the flow in the opposite direction of the concentration gradient for smaller hydrophobes, and vice versa for larger ones. We connect our findings to the wetting properties of two-dimensional materials, and we propose that slippage and wetting can be controlled separately: whereas the slippage is mostly determined by the layer in closer proximity to water, wetting can be finely tuned by stacking different two-dimensional materials. Our study advances the computational design of two-dimensional materials and van der Waals heterostructures, enabling precise control over wetting and slippage properties for applications in coatings and water purification membranes.

All-2D CVD-grown semiconductor field-effect transistors with van der Waals graphene contacts

Two-dimensional (2D) semiconductors and van der Waals (vdW) heterostructures with graphene have generated enormous interest for future electronic, optoelectronic, and energy-harvesting applications. The electronic transport properties and correlations of such hybrid devices strongly depend on the quality of the materials via chemical vapor deposition (CVD) process, their interfaces and contact properties. However, detailed electronic transport and correlation properties of the 2D semiconductor field-effect transistor (FET) with vdW graphene contacts for understanding mobility limiting factors and metal-insulator transition properties are not explored. Here, we investigate electronic transport in scalable all-2D CVD-grown molybdenum disulfide (MoS2) FET with graphene contacts. The Fermi level of graphene can be readily tuned by a gate voltage to enable a nearly perfect band alignment and, hence, a reduced and tunable Schottky barrier at the contact with good field-effect channel mobility. Detailed temperature-dependent transport measurements show dominant phonon/impurity scattering as a mobility limiting mechanisms and a gate-and bias-induced metal-insulator transition in different temperature ranges, which is explained in light of the variable-range hopping transport. These studies in such scalable all-2D semiconductor heterostructure FETs will be useful for future electronic and optoelectronic devices for a broad range of applications.

(Invited) Two-Dimensional Layered Materials and Their Mixed-Dimensional Hybrids for Electrochemical Applications

Compared with their 3D counterparts, two-dimensional (2D) van der Waals (vdW) materials exhibit quantum confinement where charge carriers are spatially confined at the physical boundaries. Particularly, when mixing 2D materials with other low-dimensional (LD) materials, they exhibit enormous potential in electrochemical energy applications due to the unique properties arising from reduced dimensionality and, more importantly, material integration synergy.In this work, 2D transition metal dichalcogenides (MoS2) and their mixed low-dimensional hybrids (MLDHs) are introduced with an emphasis on the hybrid structure construction using the one-step solvothermal synthesis technique and their electrochemical applications. Fundamental insight into the synergistic effect of the MLDHs integration in terms of active site exposure, surface area enlargement, electrical conductivity improvement, and structural phase engineering for advancing the development of Li-ion batteries (LIBs) and electrocatalytic hydrogen evolution reaction (HER) will also be discussed. Specifically, in the case of LIBs, 2D-based binary hybrids (i.e., MoS2/MXene) deliver a Li-ion storage capacity of 540 mA h g−1 at 100 mA g−1 and a stable cycle performance up to 300 cycles. In sharp contrast, the 2D-based ternary MLDHs (i.e., MoS2/MXene/CNT) exhibit a higher Li-ion storage capacity (1500 mAh g−1 at 100 mA g−1), outstanding cycle stability (up to 300 cycles) and excellent rate capability (500 mAh g−1 at 4000 mA g−1) as an anode of LIBs. In the case of HER, the MLDH heterostructures show an overpotential of 169 mV with a low Tafel slope of 51 mV/dec and can be cycled to 1000 cycles. Leveraging the unique microreactor platform based on the 2D vdW platform, a mechanistic understanding of charge transport dynamics at the electrified electrode and current collector interface will be highlighted.The knowledge gained on how mixed-dimensional physics and chemistry will shed light on the design principle of the electrode materials for electrochemical energy storage and conversion and deepen the understanding of the process-structural-property-performance (PSPP) relationship of the vdW-based hybrid structures.

Probing the weak limit of magnetocrystalline anisotropy through a spin‒flop transition in the van der Waals antiferromagnet CrPS4

The influence of magnetocrystalline anisotropy (MCA) on antiferromagnetism is elucidated through the characterization of the spin‒flop transition. However, due to a lack of suitable candidates for investigation, a detailed understanding of the preservation of the spin‒flop transition in the presence of low MCA energy remains elusive. In this study, we introduce CrPS4, which is a two-dimensional van der Waals antiferromagnet, as an ideal system to explore the exceedingly weak limit of the thermally-evolved MCA energy. By employing a uniaxially anisotropic spin model and fitting it to the experimental magnetic properties, we quantify the MCA energy and identify the discernible spin configurations in different magnetic phases. Notably, even at the limit of extremely weak MCA, with a mere 0.12% of the interlayer antiferromagnetic exchange interaction at T = 33 K, which is slightly below the Néel temperature (TN) of 38 K, the spin‒flop transition remains intact. We further establish a direct correlation between the visualized spin arrangements and the progressive reversal of magnetic torque induced by rotating magnetic fields. This analysis reveals the essential role of MCA in antiferromagnetism, thus extending our understanding to previously undetected limits and providing valuable insights for the development of spin-processing functionalities based on van der Waals magnets.

Multi-species optically addressable spin defects in a van der Waals material

Optically addressable spin defects hosted in two-dimensional van der Waals materials represent a new frontier for quantum technologies, promising to lead to a new class of ultrathin quantum sensors and simulators. Recently, hexagonal boron nitride (hBN) has been shown to host several types of optically addressable spin defects, thus offering a unique opportunity to simultaneously address and utilise various spin species in a single material. Here we demonstrate an interplay between two separate spin species within a single hBN crystal, namely S = 1 boron vacancy defects and carbon-related electron spins. We reveal the S = 1/2 character of the carbon-related defect and further demonstrate room temperature coherent control and optical readout of both S = 1 and S = 1/2 spin species. By tuning the two spin ensembles into resonance with each other, we observe cross-relaxation indicating strong inter-species dipolar coupling. We then demonstrate magnetic imaging using the S = 1/2 defects and leverage their lack of intrinsic quantization axis to probe the magnetic anisotropy of a test sample. Our results establish hBN as a versatile platform for quantum technologies in a van der Waals host at room temperature.

Electronic and optical properties of the GeS/GeSe heterostructure tuned by in-plane strain

Constructing new two-dimensional (2D) van der Waals (vdW) heterostructures has been widely employed as a convenient and effective strategy for tuning the optoelectronic properties, which is of great significance for applications in integrated nano-optoelectronic devices. In this work, we design a GeS/GeSe vdW heterostructure and systematically investigate its electronic and optical properties by using first-principles calculations. Our results indicate that the pristine GeS/GeSe heterostructure possesses an indirect band gap (∼0.98 eV) and exhibits an intrinsically type-I band alignment. Furthermore, the optoelectronic properties of the GeS/GeSe heterostructure can be effectively modulated by applying in-plane strain. Specifically, an indirect to direct band gap transition and a type-I to type-II band alignment transition can be synchronously realized, when the tensile strain along zigzag direction reaches 2%. Furthermore, the calculated dielectric function also reveals an obvious strain effect on the optical properties of the GeS/GeSe heterostructure. The light absorption coefficient of the GeS/GeSe heterostructure along the zigzag direction can reach to 106 cm−1 level, as the compressive in-plane strain reaches −5%. These findings are expected to play a guidance role in the future design of the optoelectronic devices based on 2D anisotropic heterostructures.

Two-Dimensional SnSe2(1-x)S2x/MoTe2 Antiambipolar Transistors with Composition Modulation for Multivalued Inverters.

Two-dimensional (2D) van der Waals heterostructures that embody the electronic characteristics of each constituent material have found extensive applications. Alloy engineering further enables the modulation of the electronic properties in these structures. Consequently, we envisage the construction and modulation of composition-dependent antiambipolar transistors (AATs) using van der Waals heterostructures and alloy engineering to advance multivalued inverters. In this work, we calculate the electron structures of SnSe2(1-x)S2x alloys and determine the energy band alignment between SnSe2(1-x)S2x and 2H-MoTe2. We present a series of vertical AATs based on the SnSe2(1-x)S2x/MoTe2 type-III van der Waals heterostructure. These transistors exhibit composition-dependent antiambipolar characteristics through the van der Waals heterostructure, except for the SnSe2/MoTe2 transistor. The peak current (Ipeak) decreases from 43 nA (x = 0.25) to 0.8 nA (x = 1) at Vds = -2 V, while the peak-to-valley current ratio (PVR) increases from 4.5 (x = 0.25) to 6.7 × 103 (x = 1) with a work window ranging from 30 to 47 V. Ultimately, we successfully apply several specific SnSe2(1-x)S2x/MoTe2 devices in binary and ternary logic inverters. Our results underscore the efficacy of alloy engineering in modulating the characteristics of AATs, offering a promising strategy for the development of multivalued logic devices.

Tunable Band Alignment and Optoelectronic Structure of Cu2Se/PtX2 (X=Se,Te) Heterostructures: under Strain and Electric Field

Two-dimensional (2D) material-based van der Waals heterostructures (vdWHs) are an emerging strategy for regulating the electronic properties of two-dimensional materials. This study investigated the effects of a vertical electric field and strain on the band alignment transition and optoelectronic properties of Cu2Se/PtSe2 (PtTe2) vdWHs using density functional theory calculations. Cu2Se/PtSe2 vdWHs exhibited type-I to type-II band alignment transformation under an in-plane strain, interlayer distance, and electric field of 2%, 2.40 Å, and -0.40 V/Å, respectively. Moreover, Cu2Se/PtTe2 vdWH demonstrated a rich transition of types I, II, and III band alignments with in-plane strain. The absorption spectra of Cu2Se/PtSe2 (PtTe2) vdWHs show a certain degree of blue and red shift phenomenon upon the application of strain and electric fields. The predicted power conversion efficiencies at 3% in-plane strain with an interlayer distance of 3.40 Å for Cu2Se/PtSe2 (PtTe2) vdWHs were observed to be as high as 22.58% (19.80%). Thus, our work demonstrated that both strain and electric field can effectively and flexibly control the electronic properties of Cu2Se/PtSe2 (PtTe2) vdWHs, making them a promising candidate material for applications in photodetectors and field-effect transistors.

Substantial Energy Band Modulation of Semiconducting Hexagonal GaTe Quantum Wells by Layer Thickness and Mirror Twin Boundaries.

Exploring emerging two-dimensional (2D) van der Waals (vdW) semiconducting materials and precisely tuning their electronic properties at the atomic level have long been recognized as crucial issues for developing their high-end electronic and optoelectronic applications. As a III-VI semiconductor, ultrathin layered hexagonal GaTe (h-GaTe) remains unexplored in terms of its intrinsic electronic properties and band engineering strategies. Herein, we report the successful synthesis of ultrathin h-GaTe layers on a selected graphene/SiC(0001) substrate, via molecular beam epitaxy (MBE). The widely tunable quasiparticle band gaps (∼2.60-1.55 eV), as well as the vdW quantum well states (QWSs) that can be strictly counted by the layer numbers, are well characterized by onsite scanning tunneling microscopy/spectroscopy (STM/STS), and their origins are clearly addressed by density functional theory (DFT) calculations. More intriguingly, distinctive 8|8E and 4|4P (Ga) mirror twin boundaries (MTBs) are identified in the ultrathin h-GaTe flakes, which can induce decreased band gaps and prominent p-doping effects. This work should deepen our understanding on the electronic tunability of 2D III-VI semiconductors by thickness control and line defect engineering, which may hold promise for fabricating atomic-scale vertical and lateral homojunctions toward ultrascaled electronics and optoelectronics.

A Universal In-Situ Interfacial Growth Strategy for Various MXene-Based van der Waals Heterostructures with Uniform Heterointerfaces: The Efficient Conversion from 3D Composite to 2D Heterostructures.

Two-dimensional (2D) van der Waals heterostructures endow individual 2D material with the novel functional structures, intriguing compositions, and fantastic interfaces, which efficiently provide a feasible route to overcome the intrinsic limitations of single 2D components and embrace the distinct features of different materials. However, the construction of 2D heterostructures with uniform heterointerfaces still poses significant challenges. Herein, a universal in-situ interfacial growth strategy is designed to controllably prepare a series of MXene-based tin selenides/sulfides with 2D van der Waals homogeneous heterostructures. Molten salt etching by-products that are usually recognized as undesirable impurities, are reasonably utilized by us to efficiently transform into different 2D nanostructures via in-situ interfacial growth. The obtained MXene-based 2D heterostructures present sandwiched structures and lamellar interlacing networks with uniform heterointerfaces, which demonstrate the efficient conversion from 3D composite to 2D heterostructures. Such 2D heterostructures significantly enhance charge transfer efficiency, chemical reversibility, and overall structural stability in the electrochemical process. Taking 2D-SnSe2/MXene anode as a representative, it delivers outstanding lithium storage performance with large reversible capacities and ultrahigh capacity retention of over 97% after numerous cycles at 0.2, 1.0, and 10.0 Ag-1 current density, which suggests its tremendous application potential in lithium-ion batteries.

A Hybrid Metadetector for Measuring Bell States of Optical Angular Momentum Entanglement.

High-dimensional entanglement of optical angular momentum has shown its enormous potential for increasing robustness and data capacity in quantum communication and information multiplexing, thus offering promising perspectives for quantum information science. To make better use of optical angular momentum entangled states, it is necessary to develop a reliable platform for measuring and analyzing them. Here, we propose a hybrid metadetector of monolayer transition metal dichalcogenide (TMD) integrated with spin Hall nanoantenna arrays for identifying Bell states of optical angular momentum. The corresponding states are converted into path-entangled states of propagative polaritonic modes for detection. Several Bell states in different forms are shown to be identified effectively. TMDs have emerged as an attractive platform for the next generation of on-chip optoelectronic devices. Our work may open up a new horizon for devising integrated quantum circuits based on these two-dimensional van der Waals materials.

Uncovering the phonon spectra and lattice dynamics of plastically deformable InSe van der Waals crystals

Stacking two-dimensional (2D) van der Waals (vdW) materials in a layered bulk structure provides an appealing platform for the emergence of exotic physical properties. As a vdW crystal with exceptional plasticity, InSe offers the opportunity to explore various effects arising from the coupling of its peculiar mechanical behaviors and other physical properties. Here, we employ neutron scattering techniques to investigate the correlations of plastic interlayer slip, lattice anharmonicity, and thermal transport in InSe crystals. Not only are the interlayer slip direction and magnitude well captured by shifts in the Bragg reflections, but we also observe a deviation from the expected Debye behaviour in the heat capacity and lattice thermal conductivity. Combining the experimental data with first-principles calculations, we tentatively attribute the observed evidence of strong phonon-phonon interactions to a combination of a large acoustic-optical frequency resonance and a nesting effect. These findings correlate the macroscopic plastic slip and the microscopic lattice dynamics, providing insights into the mechano-thermo coupling and modulation in 2D vdW materials.

Polarization control of lasing from few-layer MoTe2 coupled with the optical metasurface supporting quasi-trapped modes

The development of technology for integrating optical metaresonators with two-dimensional and layered van der Waals (vdW) materials opens up broad prospects for the creation of subdiffraction concentrators of electromagnetic energy, surface-emitting lasers, laser displays, and highly efficient nonlinear converters. In this work, we develop a straightforward strategy for the design and fabrication of surface-emitting laser devices based on few-layer transition metal dichalcogenides placed on the dielectric metasurfaces in the regime of quasi-trapped mode excitation. We optimize the parameters of MoTe2 flake and Si metasurface to achieve a positive feedback and to observe the lasing, resulting from their integration, with the predicted characteristics. Promising potential for the development of vdW-metalaser platform is associated with the possibility of simple polarization control of lasing regimes by employing the features of the bianisotropic response of the metasurface's building blocks.