Two-dimensional Hexagonal Boron Nitride Research Articles

Modeling the performance and bandwidth of single-atom adiabatic quantum memories

Quantum memories are essential for quantum repeaters, which will form the backbone of the future quantum internet. Such memory can capture a signal state for a controllable amount of time, after which this state can be retrieved. In this work, we theoretically investigated how atomic material and engineering parameters affect the performance and bandwidth of a quantum memory. We have applied a theoretical model for quantum memory operation based on the Lindblad master equation and adiabatic quantum state manipulation. The materials’ properties and their uncertainty are evaluated to determine the performance of Raman-type quantum memories by showcasing two defects in two-dimensional hexagonal boron nitride. We have derived a scheme to calculate the signal bandwidth based on the material parameters as well as the maximum efficiency that can be realized. The bandwidth depends on four factors: the signal photon frequency, the dipole transition moments in the electronic structure, the cavity volume, and the strength of the external control electric field. As our scheme is general and independent of materials, it can be applied to many other quantum materials with a suitable three-level structure. We, therefore, provided a promising route for designing and selecting materials for quantum memories. Our work is, therefore, an important step toward the realization of a large-scale quantum network.

Two-dimensional hexagonal boron nitride by cryo-milling: microstructure and oxidation behavior at elevated temperature

Two-dimensional hexagonal boron nitride by cryo-milling: microstructure and oxidation behavior at elevated temperature

Negatively charged boron-vacancy defect in hexagonal boron nitride nanoparticles

Fluorescent defects in two-dimensional (2D) hexagonal boron nitride (hBN) crystals have attracted a great potential in quantum information and sensing technologies. In particular, the negatively charged boron vacancy (VB−) center has shown spin-dependent fluorescence in 2D flakes or large hBN crystals, which can be manipulated at room temperature, enhancing the application scope of hBN in quantum technologies. In this work, we demonstrate the generation of this interesting spin defect in small hBN nanoparticles (NPs) with a size range of 10–50 nm. The obtained optical properties of the VB− showed a photostable photoluminescence peaked at 820 nm with a spin-lattice relaxation time (T1) of 17 μs and optically detected magneto resonance (ODMR) contrast of 10%. Achieving long T1 time and high ODMR contrast is crucial for effective quantum sensing using small hBN nanocrystals. The reported spin-optical properties of the generated VB− spin defect in hBN NPs are comparable to those created in bulk/flake hBN crystals. These results open the door for optimizing such spin-dependent defects in small hBN NPs for promising applications, especially in quantum sensing and biology.

Solution-phase sample-averaged single-particle spectroscopy of quantum emitters with femtosecond resolution.

The development of many quantum optical technologies depends on the availability of single quantum emitters with near-perfect coherence. Systematic improvement is limited by a lack of understanding of the microscopic energy flow at the single-emitter level and ultrafast timescales. Here we utilize a combination of fluorescence correlation spectroscopy and ultrafast spectroscopy to capture the sample-averaged dynamics of defects with single-particle sensitivity. We employ this approach to study heterogeneous emitters in two-dimensional hexagonal boron nitride. From milliseconds to nanoseconds, the translational, shelving, rotational and antibunching features are disentangled in time, which quantifies the normalized two-photon emission quantum yield. Leveraging the femtosecond resolution of this technique, we visualize electron-phonon coupling and discover the acceleration of polaronic formation on multi-electron excitation. Corroborated with theory, this translates to the photon fidelity characterization of cascaded emission efficiency and decoherence time. Our work provides a framework for ultrafast spectroscopy in heterogeneous emitters, opening new avenues of extreme-scale characterization for quantum applications.

Ultra-High-Efficiency Corrosion Protection of Metallic Surface Based on Thin and Dense Hexagonal Boron Nitride Coating Films.

Quest for ultrathin and highly effective anticorrosion coating films is critical for both fundamental community of materials science and industrial economics. A two-dimensional hexagonal boron nitride (h-BN) film is a newly developed effective anticorrosion material due to its superior impermeability, thermal stability, and chemical stability. However, research in growth and anticorrosion properties of large-area dense h-BN coating films still lies in its infancy. Here, we report on the synthesis of a large-area and continuous dense few-layer (∼4) h-BN coating film onto a metal surface by chemical vapor deposition (CVD) and its anticorrosion properties both in air and seawater environments. Cu coated in h-BN, which functions as an anticorrosive coating, exhibits an impressively reduced corrosion rate (CR) in a 3.5% NaCl solution (which mimics a seawater environment) when compared to bare Cu (approximately 27 times). At 200 °C, the h-BN coating can prevent Cu foil's surface from oxidizing, although doing so will cause a significant amount of oxide particles to simultaneously form on the bare Cu surface. In the meantime, the performance of the h-BN film remains unaltered after 100 days in an atmospheric environment, demonstrating the ultrahigh stability and corrosion resistance of the as-grown h-BN film.

Exceptionally strong coupling of defect emission in hexagonal boron nitride to stacking sequences

Van der Waals structures present a unique opportunity for tailoring material interfaces and integrating photonic functionalities. By precisely manipulating the twist angle and stacking sequences, it is possible to elegantly tune and functionalize the electronic and optical properties of layered van der Waals structures. Among these materials, two-dimensional hexagonal boron nitride (hBN) stands out for its remarkable optical properties and wide band gap, making it a promising host for solid state single photon emitters at room temperature. Previous investigations have demonstrated the observation of bright single photon emission in hBN across a wide range of wavelengths. In this study, we unveil an application of van der Waals technology in modulating their spectral shapes and brightness by carefully controlling the stacking sequences and polytypes. Our theoretical analysis reveals remarkably large variations in the Huang-Rhys factors–an indicator of the interaction between a defect and its surrounding lattice–reaching up to a factor of 3.3 for the same defect in different stacking sequences. We provide insights into the underlying mechanism behind these variations, shedding light on the design principles necessary to achieve rational and precise control of defect emission. This work paves the way for enhancing defect identification and facilitating the engineering of highly efficient single photon sources and qubits using van der Waals materials.

Manipulating the Stacking in Two-Dimensional Hexagonal Boron Nitride Bilayers: Implications for Defect-Based Single Photon Emitters

Manipulating the Stacking in Two-Dimensional Hexagonal Boron Nitride Bilayers: Implications for Defect-Based Single Photon Emitters

First-principles study of highly sensitive graphene/hexagonal boron nitride heterostructures for application in toxic gas-sensing devices.

Graphene-based sensors exhibit high sensitivity, fast response, and good selectivity towards toxic gases but have low mechanical stability. The combination of graphene and two-dimensional hexagonal boron nitride (h-BN) is expected to increase the mechanical stability and enhance the adsorption performance of these gas sensors. Using first-principles calculations, we demonstrate that two-dimensional graphene/h-BN double layers can be used as good substrates for gas sensors with a small lattice mismatch of only 1.78%. Moreover, the presence of a h-BN layer widens the band gap by about 38 meV and considerably increases the work function, thus positively affecting the gas adsorption performance. Although these graphene/h-BN heterostructures do not change the physical adsorption mechanism of these sensors concerning the graphene-based materials, these bilayers significantly enhance the sensitivity of these sensors for detecting CO2, CO, NO, and NO2 toxic gases. Particularly, compared to the pristine graphene-based materials, the gas adsorption energies of graphene/h-BN increased by up to 13.78% for the adsorption of NO, and the shortest distances between the graphene/h-BN substrates and adsorbed gas molecules decreased. We also show that the graphene/h-BN heterostructure is more selective towards NOx gases while more inert towards COx gases, based on the different amounts of charge transferred from the substrate to the adsorbed gas molecules. Using the non-equilibrium Green functions in the context of density functional theory, we quantitatively associated these charge transfers with the reduction of the current passing through these scattering regions. These results demonstrate that graphene/h-BN heterostructures can be exploited as highly sensitive and selective room-temperature gas sensors for detecting toxic gases.

Hexagonal Boron Nitride as Filler for Silica-Based Elastomer Nanocomposites.

Two-dimensional hexagonal boron nitride (hBN) has attracted tremendous attention over the last few years, thanks to its stable structure and its outstanding properties, such as mechanical strength, thermal conductivity, electrical insulation, and lubricant behavior. This work demonstrates that hBN can also improve the rheological and mechanical properties of elastomer composites when used to partially replace silica. In this work, commercially available pristine hBN (hBN-p) was exfoliated and ball-mill treated in air for different durations (2.5, 5, and 10 h milling). Functionalization occurred with the -NH and -OH groups (hBN-OH). The functional groups were detected using Fourier-Transform Infrared pectroscopy (FT-IR) and were estimated to be up to about 7% through thermogravimetric analysis. The presence of an increased amount of oxygen in hBN-OH was confirmed using Scanning Electron Microscopy coupled with Energy-Dispersive X-ray Spectroscopy. (SEM-EDS). The number of stacked layers, estimated using WAXD analysis, decreased to 8-9 in hBN-OH (10 h milling) from about 130 in hBN-p. High-resolution transmission electron microscopy (HR-TEM) and SEM-EDS revealed the increase in disorder in hBN-OH. hBN-p and hBN-OH were used to partially replace silica by 15% and 30%, respectively, by volume, in elastomer composites based on poly(styrene-co-butadiene) from solution anionic polymerization (S-SBR) and poly(1,4-cis-isoprene) from Hevea Brasiliensis (natural rubber, NR) as the elastomers (volume (mm3) of composites released by the instrument). The use of both hBNs in substitution of 30% of silica led to a lower Payne effect, a higher dynamic rigidity, and an increase in E' of up to about 15% at 70 °C, with similar/lower hysteresis. Indeed, the composites with hBN-OH revealed a better balance of tan delta (higher at low temperatures and lower at high temperatures) and better ultimate properties. The functional groups reasonably promote the interaction of hBN with silica and with the silica's coupling agent, sulfur-based silane, and thus promoted the interaction with the elastomer chains. The volume of the composite, measured using a high-pressure capillary viscometer, increased by about 500% and 400% after one week of storage in the presence of hBN-p and hBN-OH. Hence, both hBNs improved the processability and the shelf life of the composites. Composites obtained using hBN-OH had even filler dispersion without the detachments of the filler from the elastomer matrix, as shown through TEM micrographs. These results pave the way for substantial improvements in the important properties of silica-based composites for tire compounds, used to reduce rolling resistance and thus the improve environmental impacts.

Mechanism of Controllable Growth of Large-Area Single-Crystal Hexagonal Boron Nitride on Preoxidized Copper Substrate.

Two-dimensional (2D) hexagonal boron nitride (h-BN) exhibits promising properties for electronic and photoelectric devices, while the growth of high-quality h-BN remains challenging. Here we theoretically explored the mechanism of epitaxial growth of high-quality h-BN by using the preoxidized and hydrogen-annealed copper substrate, i.e., Cu2O. It is revealed thermodynamically that the unidirectional nucleation of h-BN can be rationalized on the symmetry-matched Cu2O(111) surface rather than the antiparallel nucleation on the Cu(111) surface. Kinetically, the dehydrogenation of feedstock of h-BN on the Cu2O(111) surface is also much easier than that on the Cu(111) surface. Both the B and N atoms are energetically more preferred to stay on the surface rather than inside the body of Cu2O, which leads to a surface-diffusion-based growth behavior on the Cu2O(111) surface instead of the precipitation-diffusion mixed case on the Cu(111) surface. Our work may guide future experimental design for the controllable growth of wafer-scale single-crystal h-BN.

Vitality of Intralayer Vibration in hBN for Effective Long-Range Interlayer Hole Transfer across High Barriers in MoSe2/hBN/WSe2 Heterostructures.

Introducing the two-dimensional (2D) hexagonal boron nitride (hBN) between 2D transition metal dichalcogenide (TMD) layers promises convenient manipulation of the interlayer exciton (IX) and interlayer charge transfer in TMD/hBN/TMD heterostructures, while the role of inserted hBN layers during IX formation is controversial. Employing ab initio nonadiabatic molecular dynamics (NAMD) simulations and the electron-phonon coupling model, we systematically investigate interlayer hole transfer in MoSe2/WSe2 bilayers intercalated by hBN layers with various thicknesses. The conventional direct hole transfer from MoSe2 to WSe2 is decelerated by 2-3 orders of magnitude after the hBN insertion. Meanwhile, a novel channel intermediated by a deeper hole of WSe2 becomes dominant, where the intralayer shear mode of hBN plays a crucial role by reducing the energy barriers for this new channel. The unique role of hBN layers is revealed for the first time, enriching the knowledge of the underlying microscopic mechanisms and providing instructive guidance to practical van der Waals optoelectronic devices.

Pulmonary Toxicity of Boron Nitride Nanomaterials Is Aspect Ratio Dependent.

Boron nitride (BN) nanomaterials have drawn a lot of interest in the material science community. However, extensive research is still needed to thoroughly analyze their safety profiles. Herein, we investigated the pulmonary impact and clearance of two-dimensional hexagonal boron nitride (h-BN) nanosheets and boron nitride nanotubes (BNNTs) in mice. Animals were exposed by single oropharyngeal aspiration to h-BN or BNNTs. On days 1, 7, and 28, bronchoalveolar lavage (BAL) fluids and lungs were collected. On one hand, adverse effects on lungs were evaluated using various approaches (e.g., immune response, histopathology, tissue remodeling, and genotoxicity). On the other hand, material deposition and clearance from the lungs were assessed. Two-dimensional h-BN did not cause any significant immune response or lung damage, although the presence of materials was confirmed by Raman spectroscopy. In addition, the low aspect ratio h-BN nanosheets were internalized rapidly by phagocytic cells present in alveoli, resulting in efficient clearance from the lungs. In contrast, high aspect ratio BNNTs caused a strong and long-lasting inflammatory response, characterized by sustained inflammation up to 28 days after exposure and the activation of both innate and adaptive immunity. Moreover, the presence of granulomatous structures and an indication of ongoing fibrosis as well as DNA damage in the lung parenchyma were evidenced with these materials. Concurrently, BNNTs were identified in lung sections for up to 28 days, suggesting long-term biopersistence, as previously demonstrated for other high aspect ratio nanomaterials with poor lung clearance such as multiwalled carbon nanotubes (MWCNTs). Overall, we reveal the safer toxicological profile of BN-based two-dimensional nanosheets in comparison to their nanotube counterparts. We also report strong similarities between BNNTs and MWCNTs in lung response, emphasizing their high aspect ratio as a major driver of their toxicity.

Adsorption, dissociation, and diffusion of borazine on Pt(111)

Using first-principles calculations, we investigate the adsorption, dissociation, and diffusion of borazine, a common precursor for the growth of two-dimensional hexagonal boron nitride (h-BN), on a Pt(111) surface. Our calculations show that borazine adsorbs on Pt(111) both molecularly and dissociatively. The molecular borazine has a planar structure, whereas the dissociated borazine is either in a tilted or vertical configuration. The energy differences between the structures are only ∼0.1 eV although the dissociated ones are more stable, and the energy barriers for conversion between the structures are also of the order of 0.1 eV. For molecular adsorption, borazine migrates through direct (0.87 eV barrier) or rotational (0.67 eV barrier) mechanisms. In the dissociated state, with alternating parallel and perpendicular structures, the borazine radical can migrate via a “slinky” movement. This results in a much lower diffusion barrier of 0.2 eV. In the case of vertical diffusion, the radical migrates with an energy barrier of 0.29 eV. Our results are consistent with experimental observations of borazine dehydrogenation and may be helpful in understanding h-BN formation at room temperature. We also discuss the atomistic processes for h-BN formation at high growth temperatures.

The role of oxygen incorporation in Ni (111) substrates on the growth of hexagonal boron nitride monolayers

Reliable and controllable growth of two-dimensional (2D) hexagonal boron nitride (h-BN) is essential for its wide range of applications. Substrate engineering is one of the critical factors that influence the growth of the epitaxial h-BN films. Here, we report the growth of monolayer h-BN on Ni (111) substrates incorporated with oxygen atoms via molecular beam epitaxy. It was found that the increase of incorporated oxygen concentration in the Ni substrate through a pretreatment process prior to the h-BN growth step would have an adverse effect on the morphology and growth rate of 2D h-BN. Under the same growth condition, h-BN monolayer coverage decreases exponentially as the amount of oxygen incorporated into Ni (111) increases. Density functional theory calculations and climbing image nudged elastic band (CI-NEB) method reveal that the substitutional oxygen atoms can increase the diffusion energy barrier of B and N atoms on Ni (111) thereby inhibiting the growth of h-BN films. As-grown large-area h-BN monolayer films and fabricated Al/h-BN/Ni (MIM) nanodevices were comprehensively characterized to evaluate the structural, optical and electrical properties of high-quality monolayers. Direct tunneling mechanism and high breakdown strength of ∼11.2 MV cm−1 are demonstrated for the h-BN monolayers grown on oxygen-incorporated Ni (111) substrates, indicating that these films have high quality. This study provides a unique example that heterogeneous catalysis principles can be applied to the epitaxy of 2D crystals in solid state field. Similar strategies can be used to grow other 2D crystalline materials, and are expected to facilitate the development of next generation devices based on 2D crystals.

Thickness-Controlled Synthesis of Uniform Hexagonal Boron Nitride Films on Metal Alloys by Chemical Vapor Deposition

Two-dimensional (2D) multilayer hexagonal boron nitride (hBN) is a superior substrate for other 2D materials due to its insulating property, atomic-scale smoothness, and absence of dangling bonds, enhancing electrical or optical properties in high-performance 2D material-based devices. In most fabrication processes for 2D heterostructure devices, thick hBN flakes exfoliated from bulk have been used because of their high quality and simplicity in the process. However, exfoliated hBN flakes are limited in size and thickness control, impeding scale-up production for industrialization. Therefore, new synthesis strategies are required to overcome the drawback of the exfoliation method. In this work, we investigated the synthesis of large-area, multilayer hBN via atmospheric pressure chemical vapor deposition using single crystalline metal and single crystal alloy substrates. The synthesized results are characterized by optical microscopy, scanning electron microscopy, Raman spectroscopy, atomic force microscopy, etc. These studies provide a more comprehensive understanding of the growth mechanism of hexagonal boron nitride.

Color Centers in Hexagonal Boron Nitride.

Atomically thin two-dimensional (2D) hexagonal boron nitride (hBN) has emerged as an essential material for the encapsulation layer in van der Waals heterostructures and efficient deep ultraviolet optoelectronics. This is primarily due to its remarkable physical properties and ultrawide bandgap (close to 6 eV, and even larger in some cases) properties. Color centers in hBN refer to intrinsic vacancies and extrinsic impurities within the 2D crystal lattice, which result in distinct optical properties in the ultraviolet (UV) to near-infrared (IR) range. Furthermore, each color center in hBN exhibits a unique emission spectrum and possesses various spin properties. These characteristics open up possibilities for the development of next-generation optoelectronics and quantum information applications, including room-temperature single-photon sources and quantum sensors. Here, we provide a comprehensive overview of the atomic configuration, optical and quantum properties, and different techniques employed for the formation of color centers in hBN. A deep understanding of color centers in hBN allows for advances in the development of next-generation UV optoelectronic applications, solid-state quantum technologies, and nanophotonics by harnessing the exceptional capabilities offered by hBN color centers.

Strain engineering in 2D hBN and graphene with evaporated thin film stressors

We demonstrate a technique to strain two-dimensional hexagonal boron nitride (hBN) and graphene by depositing stressed thin films to encapsulate exfoliated flakes. We choose optically transparent stressors to be able to analyze strain in 2D flakes through Raman spectroscopy. Combining thickness-dependent analyses of Raman peak shifts with atomistic simulations of hBN and graphene, we can explore layer-by-layer strain transfer in these materials. hBN and graphene show strain transfer into the top four and two layers of multilayer flakes, respectively. hBN has been widely used as a protective capping layer for other 2D materials, while graphene has been used as a top gate layer in various applications. Findings of this work suggest that straining 2D heterostructures with evaporated stressed thin films through the hBN capping layer or graphene top contact is possible since strain is not limited to a single layer.

Dirac Half-Semimetallicity and Antiferromagnetism in Graphene Nanoribbon/Hexagonal Boron Nitride Heterojunctions.

Half-metals have been envisioned as active components in spintronic devices by virtue of their completely spin-polarized electrical currents. Actual materials hosting half-metallic phases, however, remain scarce. Here, we predict that recently fabricated heterojunctions of zigzag nanoribbons embedded in two-dimensional hexagonal boron nitride are half-semimetallic, featuring fully spin-polarized Dirac points at the Fermi level. The half-semimetallicity originates from the transfer of charges from hexagonal boron nitride to the embedded graphene nanoribbon. These charges give rise to opposite energy shifts of the states residing at the two edges, while preserving their intrinsic antiferromagnetic exchange coupling. Upon doping, an antiferromagnetic-to-ferrimagnetic phase transition occurs in these heterojunctions, with the sign of the excess charge controlling the spatial localization of the net magnetic moments. Our findings demonstrate that such heterojunctions realize tunable one-dimensional conducting channels of spin-polarized Dirac fermions seamlessly integrated into a two-dimensional insulator, thus holding promise for the development of carbon-based spintronics.

ZIF-8 and benzimidazole co-modified h-BN for enhancing anti-corrosion performance of epoxy coatings

Two-dimensional hexagonal boron nitride (h-BN) has excellent corrosion resistance and barrier ability, showing unique advantages in the field of anti-corrosion. The h-BN was assembled with Zeolite imidazolate framework material (ZIF-8) and benzimidazole (BI), and an active filler (h-BN/ZIF-8@BI) with shielding and active corrosion resistance was prepared. Zeolite imidazolate framework material was in-situ grown on h-BN surface and loaded with benzimidazole (BI), prepared an active anticorrosive filler with high shielding property (h-BN/ZIF-8@BI). The microstructure, crystal form, element composition, corrosion inhibition ability and thermal stability of h-BN/ZIF-8@BI were studied. The barrier, corrosion inhibition and anti-friction properties of EP/h-BN/ZIF-8@BI combined with F51 epoxy resin were explored. EIS test shows that the corrosion inhibition efficiency of h-BN/ZIF-8@BI is as high as 81.8 %. The impedance modulus of the steel matrix protected by the composite coating was about 2 orders of magnitude higher than that of the control sample, showing excellent barrier ability. In addition, the salt spray test proves that the composite coating has excellent corrosion inhibition characteristics. Taber testing machine shows that the wear mass loss of EP/h-BN/ZIF-8@BI coating is 34.5 % lower than that of EP coating. This work provides a novel idea for the preparation of high barrier, active anticorrosive and wear resistant anticorrosive coatings, and provides a new horizon of the composite coatings.

Dot-product computation and logistic regression with 2D hexagonal-boron nitride (h-BN) memristor arrays

This work reports on the hardware implementation of analog dot-product operation on arrays of two-dimensional (2D) hexagonal boron nitride (h-BN) memristors. This extends beyond previous work that studied isolated device characteristics towards the application of analog neural network accelerators based on 2D memristor arrays. The wafer-level fabrication of the memristor arrays is enabled by large-area transfer of CVD-grown few-layer (8 layers) h-BN films. Individual devices achieve an on/off ratio of >10, low voltage operation (∼0.5 V set/V reset), good endurance (>6000 programming steps), and good retention (>104 s). The dot-product operation shows excellent linearity and repeatability, with low read energy consumption (∼200 aJ to 20 fJ per operation), with minimal error and deviation over various measurement cycles. Moreover, we present the implementation of a stochastic logistic regression algorithm in 2D h-BN memristor hardware for the classification of noisy images. The promising resistive switching characteristics, performance of dot-product computation, and successful demonstration of logistic regression in h-BN memristors signify an important step towards the integration of 2D materials for next-generation neuromorphic computing systems.