In this research, the electronic band structure, electronic properties and the exciton binding energy of dilute quaternary GaInAsN alloy semiconductors are investigated. This study was aimed to theoretically study the exciton properties of dilute GaInAsN semiconductors. The effects of Nitrogen incorporation in InGaAs alloy was studied within the band anti-crossing model (BAC). The pseudopotential inputs within the virtual crystal approximation (VCA) was employed to make modifications for the nitrogen and indium related alloy disorder effects. The Harrison’s model used to study the bandstructure. In general, the results of our computations are in agreement with recent experimental findings. It is found that the presence of nitrogen in the GaInAsN alloy reduces the fundamental bandgap energy within the band anticrossing (BAC) model in the vicinity of the first Brillouin zone boundary, to . The heavy hole and electron effective masses, reduced mass, energy band gap, high frequency dielectric constant, static dielectric constant, the refractive indices, polarity, covalency, Bohr radius and binding energy are also modified by the nitrogen and indium fractions of the alloy. For all the alloy compositions studied, it was observed that the binding energies of the excitons vary between the values for InAs and GaAs . Also, the corresponding excitons Bohr radii vary between the values for InAs and GaAs . The information derived from the present study predicts that GaInAsN tunable binding energies and electronic properties are of great technological importance for mid-infrared (MIR) optoelectronics.
Read full abstract