Tungsten-based Transition Metal Dichalcogenides Research Articles

Electrodeposition of Transition Metal Dichalcogenide Thin- Films from Non-Aqueous Solvents

Transition metal dichalcogenides (TMDCs) are an interesting group of 2D materials characterised with a layered structure analogous to graphene and they possess unique electronic and optical properties, especially when in the few- and mono-layer form. Developing scalable techniques for depositing TMDCs is a major challenge which needs to be overcome to fabricate functional devices with these materials. Electrodeposition is an industrially relevant technique that has some key advantages over other conventional deposition methods. It is a low cost and easily scalable technique and could be used for obtaining complex nanoscale features and for depositing over topologically demanding surfaces. Even though the electrodeposition of MoS2 has been achieved both in aqueous and non-aqueous electrolytes, not much progress has been made in the deposition of other TMDC materials. Tungsten based TMDCs such as WS2 and WSe2 are shown to be very promising materials in different applications, however electrodepositing them remains extremely challenging. One of the major obstacles here is developing electrochemically active precursors which are compatible with the electrolyte system and able to deliver both the tungsten and chalcogens to the electrolyte. Controlling and optimizing the deposition process to obtain few- and mono-layer TMDCs is another challenge. In addition, the choice of substrates for deposition is very important, especially for direct growth of ultra-thin TMDCs. Electrodeposition, being a bottom-up deposition method, would benefit from an atomically thin and smooth substrate such as graphene for depositing few- and mono-layer TMDCs.Here we present non-aqueous electroplating as a scalable alternative technique for tungsten-based TMDC deposition, with WS2 and WSe2 as examples. Tailored single source precursors were developed to use in non-aqueous electrolytes. WS2 was electrodeposited from dichloromethane (CH2Cl2) using the [NEt4]2[WS2Cl4] precursor. WSe2 was then electrodeposited from acetonitrile (CH3CN) electrolyte using [WSeCl4] as the precursor. Electrochemical quartz crystal microbalance (EQCM) studies were performed to optimize the deposition process and to probe the mechanism of precursor electrochemistry. Electrochemical deposition parameters were then carefully adjusted to obtain few- and mono-layer TMDCs. Patterned graphene electrodes were used as an atomically thin and smooth platform for the deposition of few- and mono-layer WS2. Few-layer TMDC films obtained on graphene were found to be much smoother than films deposited on other standard substrates such as titanium nitride (TiN) or Pt. These TMDC/graphene structures gave interesting 2D heterostructures which are technologically important for different applications.This work was funded by EPSRC grant references EP/V062689/1, EP/V062387/1 and EP/P025137/1

Observation of Multi-Phonon Emission in Monolayer WS2 on Various Substrates.

Transition metal dichalcogenides (TMDs) have unique absorption and emission properties that stem from their large excitonic binding energies, reduced-dielectric screening, and strong spin-orbit coupling. However, the role of substrates, phonons, and material defects in the excitonic scattering processes remains elusive. In tungsten-based TMDs, it is known that the excitons formed from electrons in the lower-energy conduction bands are dark in nature, whereas low-energy emissions in the photoluminescence spectrum have been linked to the brightening of these transitions, either via defect scattering or via phonon scattering with first-order phonon replicas. Through temperature and incident-power-dependent studies of WS2 grown by CVD or exfoliated from high-purity bulk crystal on different substrates, we demonstrate that the strong exciton-phonon coupling yields brightening of dark transitions up to sixth-order phonon replicas. We discuss the critical role of defects in the brightening pathways of dark excitons and their phonon replicas, and we elucidate that these emissions are intrinsic to the material and independent of substrate, encapsulation, growth method, and transfer approach.

Visualization of Dark Excitons in Semiconductor Monolayers for High-Sensitivity Strain Sensing.

Transition-metal dichalcogenides (TMDs) are layered materials that have a semiconducting phase with many advantageous optoelectronic properties, including tightly bound excitons and spin-valley locking. In tungsten-based TMDs, spin- and momentum-forbidden transitions give rise to dark excitons that typically are optically inaccessible but represent the lowest excitonic states of the system. Dark excitons can deeply affect the transport, dynamics, and coherence of bright excitons, hampering device performance. Therefore, it is crucial to create conditions in which these excitonic states can be visualized and controlled. Here, we show that compressive strain in WS2 enables phonon scattering of photoexcited electrons between momentum valleys, enhancing the formation of dark intervalley excitons. We show that the emission and spectral properties of momentum-forbidden excitons are accessible and strongly depend on the local strain environment that modifies the band alignment. This mechanism is further exploited for strain sensing in two-dimensional semiconductors, revealing a gauge factor exceeding 104.

Monte Carlo study of noise velocity fluctuations and microscopic carrier transport in monolayer transition metal dichalcogenides

The microscopic transport properties of electrons and holes in MoS2, MoSe2, WS2 and WSe2 are studied by means of an ensemble Monte Carlo simulator. Moreover, instantaneous carrier velocity fluctuations are analyzed in depth from a microscopic point of view, including their power spectral density, which is directly related to thermal noise in the GHz range. Results show important differences in the mean free path and momentum relaxation time for electrons and holes: valence band transport has, in general, a more ballistic character, particularly for tungsten based transition metal dichalcogenides. Electrons (especially in MoSe2 and WSe2) have faster momentum relaxation times in the whole electric field range under study. Transport in subsidiary valleys is relevant for electrons, while in the case of holes it only has a minor influence, being noteworthy only for WS2 at high electric fields. Holes present larger decay times of the velocity fluctuations correlation function: the faster decorrelation in the conduction band is associated to a larger scattering activity, a general trend observed in all the materials under study. The results indicate that it is to be expected a much larger thermal noise for p-type devices in the GHz range as compared to n-type devices: materials containing selenium have reduced levels of noise generated by velocity fluctuations, especially for electrons.

Direct Measurement of the Radiative Pattern of Bright and Dark Excitons and Exciton Complexes in Encapsulated Tungsten Diselenide

The optical properties of particularly the tungsten-based transition-metal dichalcogenides are strongly influenced by the presence of dark excitons. Recently, theoretical predictions as well as indirect experimental insights have shown that two different dark excitons exist within the light cone. While one is completely dark, the other one is only dipole forbidden out-of-plane, hence referred to as grey exciton. Here, we present angle-resolved spectroscopic data of a high-quality hexagonal-BN-encapsulated WSe2 monolayer with which we directly obtain the radiation pattern of this grey exciton that deviates from that of the bright exciton and other exciton complexes obtained at cryogenic temperatures.

Direct Observation of Gate-Tunable Dark Trions in Monolayer WSe2.

Spin-forbidden intravalley dark excitons in tungsten-based transition-metal dichalcogenides (TMDCs), because of their unique spin texture and long lifetime, have attracted intense research interest. Here, we show that we can control the dark exciton electrostatically by dressing it with one free electron or free hole, forming the dark trions. The existence of the dark trions is suggested by the unique magneto-photoluminescence spectroscopy pattern of the boron nitride (BN)-encapsulated monolayer WSe2 device at low temperature. The unambiguous evidence of the dark trions is further obtained by directly resolving the radiation pattern of the dark trions through back focal plane imaging. The dark trions possess a binding energy of ∼15 meV, and they inherit the long lifetime and large g-factor from the dark exciton. Interestingly, under the out-of-plane magnetic field, dressing the dark exciton with one free electron or hole results in distinctively different valley polarization of the emitted photon, as a result of the different intervalley scattering mechanism for the electron and hole. Finally, the lifetime of the positive dark trion can be further tuned from ∼50 ps to ∼215 ps by controlling the gate voltage. The gate-tunable dark trions usher in new opportunities for excitonic optoelectronics and valleytronics.

Many-body simulation of two-dimensional electronic spectroscopy of excitons and trions in monolayer transition metal dichalcogenides

Indications of coherently interacting excitons and trions in doped transition metal dichalcogenides have been measured as quantum beats in two-dimensional electronic spectroscopy, but the microscopic principles underlying the optical signals of exciton-trion coherence remain to be clarified. Here we present calculations of two-dimensional spectra of such monolayers based on a microscopic many-body formalism. We use a parameterized band structure and a static model dielectric function, although a full ab initio implementation of our formalism is possible in principle. Our simulated spectra are in excellent agreement with experiments, including the quantum beats, while revealing the interplay between excitons and trions in molybdenum- and tungsten-based transition metal dichalcogenides. Quantum beats are confirmed to unambiguously reflect the exciton-trion coherence time in molybdenum compounds, but are shown to provide a lower bound to the coherence time for tungsten analogues due to a destructive interference from coexisting singlet and triplet trions.

Disorder-induced broadening of excitonic resonances in transition metal dichalcogenides

The presence of impurities and disorder has an important impact on the optical response of monolayer transition metal dichalcogenides (TMDs). Here, we investigate elastic exciton-impurity scattering and its influence on the linewidth of excitonic resonances in different TMD materials. We derive an analytic expression for the linewidth broadening within the density matrix formalism. We find that the exciton linewidth increases for states up to the 3s exciton due to the scattering with impurities. For higher states, the impurity contribution decreases, reflecting the reduced scattering cross section. Furthermore, we reveal that the scattering efficiency is the largest for transitions between s and p exciton states. Finally, different TMDs show generally a similar behavior. The quantitatively smaller broadening in tungsten-based TMDs can be ascribed to their smaller effective masses resulting in a less efficient scattering.

Dark exciton based strain sensing in tungsten-based transition metal dichalcogenides

The trend towards ever smaller high-performance devices in modern technology requires novel materials with new functionalities. The recent emergence of atomically thin two-dimensional (2D) materials has opened up possibilities for the design of ultra-thin and flexible nanoelectronic devices. As truly 2D materials, they exhibit an optimal surface-to-volume ratio, which results in an extremely high sensitivity to external changes. This makes these materials optimal candidates for sensing applications. Here, we exploit the remarkably diverse exciton landscape in monolayer transition metal dichalcogenides to propose a novel dark-exciton-based concept for ultra sensitive strain sensors. We demonstrate that the dark-bright-exciton separation can be controlled by strain, which has a crucial impact on the activation of dark excitonic states. This results in a pronounced intensity change of dark excitons in photoluminescence spectra, when only 0.05 $\%$ strain is applied. The predicted extremely high optical gauge factors of up to 8000 are promising for the design of optical strain sensors.

Strong valley Zeeman effect of dark excitons in monolayer transition metal dichalcogenides in a tilted magnetic field

The dependence of the excitonic photoluminescence (PL) spectrum of monolayer transition metal dichalcogenides (TMDs) on the tilt angle of an applied magnetic field is studied. Starting from a four-band Hamiltonian we construct a theory which quantitatively reproduces the available experimental PL spectra for perpendicular and in-plane magnetic fields. In the presence of a tilted magnetic field, we demonstrate that the dark exciton PL peaks brighten due to the in-plane component of the magnetic field and split for light with different circular polarization as a consequence of the perpendicular component of the magnetic field. This splitting is more than twice as large as the splitting of the bright exciton peaks in tungsten-based TMDs. We propose an experimental setup that will allow to access the predicted splitting of the dark exciton peaks in the PL spectrum.

Anomalous oxidation and its effect on electrical transport originating from surface chemical instability in large-area, few-layer 1T'-MoTe2 films.

Two-dimensional (Mo,W)Te2 films have recently attracted significant research interest as electronic device channel materials, topological insulators and Weyl semimetals. However, one critical concern that can hamper their diverse applications is surface chemical instability due to weak Mo(W)-Te bond energy reflected in the small electronegativity difference between Mo(W) and Te, which fundamentally induces unpredictable surface oxidation and remarkably affects the film electrical transport. Here, for the first time, we clarify an anomalous oxidation featuring an unbalanced oxidation process in large-area, few-layer 1T'-MoTe2, which originates from the surface chemical instability. We identify the oxidation temperature, oxygen flow rate, structural polymorphism, and atomic chemical bond electronegativity that dominate preferential surface oxidation, which can be monitored by the appearance and decomposition of Raman-active Te metalloids. Importantly, we verify the formation of an ultrathin natural amorphous MoO3-TeO2 surface layer with an approximate self-limiting thickness that significantly affects the transport properties of the underlying few-layer 1T'-MoTe2 film. We also reveal a similar oxidation tendency in few-layer 2H-MoTe2 and 1T'-WTe2 but with a higher resistance to oxidation than 1T'-MoTe2 due to their inherent phase stability. Our findings not only represent a strong advancement in understanding surface chemical instability of atomically thin 2D TMDC materials, but also highlight technically essential importance of constructing ultrathin natural oxide dielectrics/TMDC interfaces with a controllable surface oxidation process for atomically thin TMDC-based devices.