Tunable Double Quantum Dot Research Articles

Josephson current via spin and orbital states of a tunable double quantum dot

Supercurrent transport is experimentally studied in a Josephson junction hosting a double quantum dot (DQD) with tunable symmetries. The QDs are parallel-coupled to two superconducting contacts and can be tuned between strong inter-dot hybridization and a ring geometry where hybridization is suppressed. In both cases, we observe supercurrents when the two interacting orbitals are either empty or filled with spins, or a combination. However, when each QD hosts an unpaired spin, the supercurrent depends on the spin ground state. It is strongly suppressed for the ring geometry with a spin-triplet ground state at zero external magnetic field. By increasing the QD hybridization, we find that a supercurrent appears when the ground state changes to spin-singlet. In general, supercurrents are suppressed in cases of spin doublet ground state, but an exception occurs at orbital degeneracy when the system hosts one additional spin, as opposed to three, pointing to a broken particle-hole symmetry.

Valleytronic full configuration-interaction approach: Application to the excitation spectra of Si double-dot qubits

The influence of strong electron-electron interactions and Wigner-molecule (WM) formation on the spectra of $2e$ singlet-triplet double-dot Si qubits is presented based on a full configuration interaction (FCI) approach that incorporates the valley degree of freedom (VDOF) in the context of the continuous (effective mass) description of semiconductor materials. Our FCI treats the VDOF as an isospin in addition to the regular spin. Our treatment is able to assign to each energy curve in the qubit's spectrum a complete set of good quantum numbers for both the spin and the valley isospin. This reveals an underlying SU(4) $\supset$ SU(2) $\times$ SU(2) group-chain organization in the Si double-dot spectra. With parameters in the range of actual experimental situations, we demonstrate in a double-dot qubit that, in the (2,0) charge configuration and compared to the expected large, and dot-size determined, single-particle (orbital) energy gap, the strong $e-e$ interactions drastically quench the spin-singlet$-$spin-triplet energy gap, $E_{\rm ST}$, within the same valley, making it competitive to the small energy gap, $E_V$, between the two valleys. We present results for both the $E_{\rm ST} < E_V$ and $E_{\rm ST} > E_V$ cases. We investigate the spectra as a function of detuning and demonstrate the strengthening of the avoided crossings due to a lowering of the interdot barrier and/or the influence of valley-orbit coupling. We further demonstrate, as a function of an applied magnetic field, the emergence of avoided crossings in the (1,1) charge configuration due to the spin-valley coupling. The valleytronic FCI formulated here, and implementeded for two electrons confined in a tunable double quantum dot, offers also a most effective tool for analyzing the spectra of Si qubits with more than two wells and/or more than two electrons.

Magnetic transport measurements of spin–orbit and hyperfine interactions in a Ge hut wire double quantum dot

Ge quantum dots are emerging as an attractive platform to realize high-fidelity qubits because of their strong spin–orbit interaction (SOI) and weak hyperfine interaction (HFI). Here, we measure and analyze the transport spectra on a highly tunable double quantum dot (DQD) defined in Ge hut wires with an external out-of-plane magnetic field. At a high magnetic field, the SOI induced spin-flip tunneling lifts the Pauli spin blockade and maps out the energy spectrum of the DQD. At a low magnetic field, the HFI mixes the (1, 1) states and leads to an enhanced leakage current, which is affected by the inter-dot tunnel coupling.

A charge sensor integration to tunable double quantum dots on two neighboring InAs nanowires.

A single quantum dot serving as a charge sensor is integrated to scalable double quantum dots using local top finger-gate techniques on two neighboring pure-phase InAs nanowires. The single dot built on one nanowire capacitively couples one of the double dots constructed on another nanowire via a metal bridge gate. The charge occupation states of double quantum dots can be accurately monitored by the sensor even in a few-electron regime in which transport tunneling current through the double dots vanishes. In the tunneling spectroscopy of double dots, electron inter dot tunneling process is absent; however, it can be illustrated by the sensor in terms of a transconductance line between the two closest triple points. Thus, tunnel coupling strength between the double dots is quantitatively extracted from the detectable charge transition. The highly tunable multiple quantum dots with integrated charge sensors on InAs nanowires could be an essential building block for quantum information processing technology.

A compact T-shaped nanodevice for charge sensing of a tunable double quantum dot in scalable silicon technology

We report on the fabrication and the characterization of a tunable complementary-metal oxide semiconductor (CMOS) system consisting of two quantum dots and a MOS single electron transistor (MOSSET) charge sensor. By exploiting a compact T-shaped design and few gates fabricated by electron beam lithography, the MOSSET senses the charge state of either a single or double quantum dot at 4.2 K. The CMOS compatible fabrication process, the simplified control over the number of quantum dots and the scalable geometry make such architecture exploitable for large scale fabrication of multiple spin-based qubits in circuital quantum information processing.

Charge States and Transition of Double Quantum Dot in the Few-Electron Regime

We present transport characterizations of a fully tunable double quantum dot over the few electron number down to zero, which is defined by means of surface gates on top of a GaAs/AlGaAs heterostructure. We also perform numerical simulations to map out the charge stability diagram, which is consistent with the measurements. The results demonstrate that the electric control in the double dot can be significantly enhanced by improving the design of the device structure, which provides potential advantages for quantum information processing.

Radio frequency pulsed-gate charge spectroscopy on coupled quantum dots

Time-resolved electron dynamics in coupled quantum dots is directly observed by a pulsed-gate technique. While individual gate voltages are modulated with periodic pulse trains, average charge occupations are measured with a nearby quantum point contact as detector. A key component of our setup is a sample holder optimized for broadband radio frequency applications. Our setup can detect displacements of single electrons on time scales well below a nanosecond. Tunneling rates through individual barriers and relaxation times are obtained by using a rate equation model. We demonstrate the full characterization of a tunable double quantum dot using this technique, which could also be used for coherent charge qubit control.

Tunable few-electron double quantum dots and Klein tunnelling in ultraclean carbon nanotubes

Quantum dots defined in carbon nanotubes are a platform for both basic scientific studies and research into new device applications. In particular, they have unique properties that make them attractive for studying the coherent properties of single-electron spins. To perform such experiments it is necessary to confine a single electron in a quantum dot with highly tunable barriers, but disorder has prevented tunable nanotube-based quantum-dot devices from reaching the single-electron regime. Here, we use local gate voltages applied to an ultraclean suspended nanotube to confine a single electron in both a single quantum dot and, for the first time, in a tunable double quantum dot. This tunability is limited by a novel type of tunnelling that is analogous to the tunnelling in the Klein paradox of relativistic quantum mechanics.

Cooling a mechanical resonator via coupling to a tunable double quantum dot

We study the cooling of a mechanical resonator (MR) that is capacitively coupled to a double quantum dot (DQD). The MR is cooled by the dynamical backaction induced by the capacitive coupling between the DQD and the MR. The state transition between the two dots of the DQD is excited by an ac field and afterward a tunneling event results in the decay of the excited state of the DQD. An important advantage of this system is that both the energy-level splitting and the decay rate of the DQD can be well tuned by varying the gate voltage. We find that the steady average occupancy, below unity, of the MR can be achieved by changing both the decay rate of the excited state and the red-detuning between the transition frequency of the DQD and the microwave frequency, in analogy to the laser sideband cooling of an atom or trapped ion in atomic physics. Our results show that the cooling of the MR to the ground state is experimentally implementable. Also, the MR can be heated and the steady-state average occupancy becomes infinite when the microwave frequency is larger than the transition frequency of the DQD (i.e., the blue-detuning).

Single wall carbon nanotube double quantum dot

The authors report on two top-gate defined, coupled quantum dots in a semiconducting single wall carbon nanotube, constituting a tunable double quantum dot system. The single wall carbon nanotubes are contacted by titanium electrodes and gated by three narrow top-gate electrodes as well as a back gate. The authors show that a bias spectroscopy plot on just one of the two quantum dots can be used to extract the addition energy of both quantum dots. Furthermore, honeycomb charge stability diagrams are analyzed by an electrostatic capacitor model that includes cross capacitances, and they extract the coupling energy of the double quantum dot.

Tunable Double Quantum Dots in InAs Nanowires Defined by Local Gate Electrodes

We report on low-temperature transport measurements on single and double quantum dots defined using local gates to electrostatically deplete InAs nanowires grown by chemical beam epitaxy. This technique allows us to define multiple quantum dots along a semiconducting nanowire and tune the coupling between them.

Manipulation of a Single Charge in a Double Quantum Dot

We manipulate a single electron in a fully tunable double quantum dot using microwave excitation. Under resonant conditions, microwaves drive transitions between the (1,0) and (0,1) charge states of the double dot. Local quantum point contact charge detectors enable a direct measurement of the photon-induced change in occupancy of the charge states. From charge sensing measurements, we find T1 approximately 16 ns and a lower bound estimate for T*(2) of 400 ps for the charge two-level system.

Differential charge sensing and charge delocalization in a tunable double quantum dot.

We report measurements of a tunable double quantum dot, operating in the quantum regime, with integrated local charge sensors. The spatial resolution of the sensors allows the charge distribution within the double dot system to be resolved at fixed total charge. We use this readout scheme to investigate charge delocalization as a function of temperature and strength of tunnel coupling, demonstrating that local charge sensing can be used to accurately determine the interdot coupling in the absence of transport.