Valley splitting and magnetic anisotropy of 5d TM (Hf, Ta, W, Re, Os, Ir, Pt, Au, and Hg) adsorbed Janus 2H-WSSe monolayers are investigated using first-principles calculations. The results show that 5d TM atoms adsorbed on the W-top site of Janus 2H-WSSe monolayer exhibit the lowest adsorption energy, regardless of the Se or S layer. The electronic states of Hf-SW and Re-SeW adsorbed systems cross the EF and show metallicity, while the other adsorbed systems still exhibit the semiconducting characteristics. According to the k·p model based on the effective Hamiltonian, the Zeeman effect arising from the local magnetic moment of 5d TM atoms lifts tunable valley splitting within 12.7-227meV owing to different SOC strength. A maximum valley splitting of 227meV is observed in the W adsorbed system, which is large enough to realize the valley Hall effect. Both perpendicular magnetic anisotropy (PMA) and in-plane magnetic anisotropy (IMA) can be adjusted by adsorbing different 5d TM atoms on the S/Se layer. Remarkably, the matrix elements differences (dx2–y2, dxy) decide the PMA and IMA behaviors, which are due to the competition of different TM-d orbitals based on the second-order perturbation theory. These results suggest that the 5d TM adsorbed Janus 2H-WSSe monolayer can be considered a good candidate for the spintronic and valleytronic devices.
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